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公开(公告)号：US20120244307A1
公开(公告)日：2012-09-27
申请号：US13425889
申请日：2012-03-21
申请人： Tsutomu HORI , Shin Harada , Taro Nishiguchi , Makoto Sasaki , Hiroki Inoue , Shinsuke Fujiwara
发明人： Tsutomu HORI , Shin Harada , Taro Nishiguchi , Makoto Sasaki , Hiroki Inoue , Shinsuke Fujiwara
CPC分类号： H01L29/7802 , C30B29/36 , C30B33/06 , H01L21/0475 , H01L21/2007 , H01L29/0878 , H01L29/1608 , H01L29/518 , H01L29/6606 , H01L29/66068 , H01L29/7395 , H01L29/8083 , H01L29/872 , Y10T428/18 , Y10T428/187
摘要： A silicon carbide substrate includes: a base substrate having a diameter of 70 mm or greater; and a plurality of SiC substrates made of single-crystal silicon carbide and arranged side by side on the base substrate when viewed in a planar view. In other words, the plurality of SiC substrates are arranged side by side on and along the main surface of the base substrate. Further, each of the SiC substrates has a main surface opposite to the base substrate and having an off angle of 20° or smaller relative to a {0001} plane.
摘要翻译： 碳化硅基板包括：直径为70mm以上的基底基板; 以及由单晶碳化硅构成的多个SiC基板，并且在平面图中观察时并排配置在基底基板上。 换句话说，多个SiC衬底并排布置在基底衬底的主表面上。 此外，每个SiC衬底具有与基底衬底相对的主表面，并且相对于{0001}面具有20°或更小的偏离角。
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公开(公告)号：US20120009761A1
公开(公告)日：2012-01-12
申请号：US13256991
申请日：2010-09-28
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
IPC分类号： H01L21/306 , H01L21/304
摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.
摘要翻译： 制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。 在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。 通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。 表面层至少部分去除。 在该去除步骤之后，背面和主表面彼此连接。
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公开(公告)号：US08435866B2
公开(公告)日：2013-05-07
申请号：US13256991
申请日：2010-09-28
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
IPC分类号： H01L21/306 , H01L21/304
摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.
摘要翻译： 制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。 在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。 通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。 表面层至少部分去除。 在该去除步骤之后，背面和主表面彼此连接。
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公开(公告)号：US20110175107A1
公开(公告)日：2011-07-21
申请号：US13005714
申请日：2011-01-13
申请人： Taro NISHIGUCHI , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
发明人： Taro NISHIGUCHI , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
IPC分类号： H01L29/16
CPC分类号： H01L21/02378 , H01L21/02002 , H01L21/02529 , H01L21/02667 , H01L21/30625 , H01L29/1608
摘要： A base portion is made of silicon carbide and has a main surface. At least one silicon carbide layer is provided on the main surface of the base portion in a manner exposing a region of the main surface along an outer edge of the main surface. At least one protection layer is provided on this region of the main surface of the base portion along the outer edge of the main surface. Thus, a silicon carbide substrate can be polished with high in-plane uniformity.
摘要翻译： 基部由碳化硅制成并具有主表面。 至少一个碳化硅层以沿着主表面的外边缘露出主表面的区域的方式设置在基部的主表面上。 沿着主表面的外缘在基部的主表面的该区域上设置至少一个保护层。 因此，可以以高的面内均匀性抛光碳化硅衬底。
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5.发明申请SILICON CARBIDE INGOT, SILICON CARBIDE SUBSTRATE, MANUFACTURING METHOD THEREOF, CRUCIBLE, AND SEMICONDUCTOR SUBSTRATE 审中-公开硅碳化硅，碳化硅基材，其制造方法，可制造和半导体基板公开(公告)号：US20120070605A1
公开(公告)日：2012-03-22
申请号：US13375287
申请日：2010-09-17
申请人： Makoto Sasaki , Shin Harada , Taro Nishiguchi , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa , Shinsuke Fujiwara
发明人： Makoto Sasaki , Shin Harada , Taro Nishiguchi , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa , Shinsuke Fujiwara
CPC分类号： C30B29/36 , C30B23/00 , H01L21/02002 , Y10T428/192
摘要： An SiC ingot includes a bottom face having 4 sides; four side faces extending from the bottom face in a direction intersecting the direction of the bottom face; and a growth face connected with the side faces located at a side opposite to the bottom face. At least one of the bottom face, the side faces, and the growth face is the {0001} plane, {1-100} plane, {11-20} plane, or a plane having an inclination within 10° relative to these planes.
摘要翻译： SiC锭包括具有4个侧面的底面; 四个侧面从与底面方向相交的方向从底面延伸; 以及与位于与底面相对的一侧的侧面连接的生长面。 底面，侧面和生长面中的至少一个是{0001}面，{1-100}面，{11-20}面，或相对于这些平面倾斜10°以内的平面 。
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公开(公告)号：US08629457B2
公开(公告)日：2014-01-14
申请号：US13005719
申请日：2011-01-13
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
IPC分类号： H01L33/18
CPC分类号： H01L33/16 , H01L33/007 , H01L33/32
摘要： A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high.
摘要翻译： 碳化硅衬底具有面向半导体层的第一层和堆叠在第一层上的第二层。 第二层的位错密度高于第一层的位错密度。 因此，发光装置的量子效率和功率效率都可以高。
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公开(公告)号：US20110284873A1
公开(公告)日：2011-11-24
申请号：US13146432
申请日：2010-09-28
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
IPC分类号： H01L29/161
CPC分类号： H01L29/66068 , H01L21/02529 , H01L21/02609 , H01L21/187 , H01L29/7802
摘要： A silicon carbide substrate has a substrate region and a support portion. The substrate region has a first single crystal substrate. The support portion is joined to a first backside surface of the first single crystal. The dislocation density of the first single crystal substrate is lower than the dislocation density of the support portion. At least one of the substrate region and the support portion has voids.
摘要翻译： 碳化硅衬底具有衬底区域和支撑部分。 衬底区域具有第一单晶衬底。 支撑部分连接到第一单晶的第一背面。 第一单晶基板的位错密度低于支撑部的位错密度。 衬底区域和支撑部分中的至少一个具有空隙。
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公开(公告)号：US20110175108A1
公开(公告)日：2011-07-21
申请号：US13005719
申请日：2011-01-13
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
IPC分类号： H01L33/18
CPC分类号： H01L33/16 , H01L33/007 , H01L33/32
摘要： A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high.
摘要翻译： 碳化硅衬底具有面向半导体层的第一层和堆叠在第一层上的第二层。 第二层的位错密度高于第一层的位错密度。 因此，发光装置的量子效率和功率效率都可以高。
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9.发明授权公开(公告)号：US08642154B2
公开(公告)日：2014-02-04
申请号：US13475360
申请日：2012-05-18
IPC分类号： B32B3/02
摘要： A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×1015 atoms/cm3 and less than or equal to 1×1020 atoms/cm3, a metal atom concentration greater than or equal to 1×1014 atoms/cm3 and less than or equal to 1×1018 atoms/cm3, and not exceeding the n-type dopant concentration, and a metal atom concentration gradient less than or equal to 1×1017 atoms/(cm3·mm), a silicon carbide single crystal wafer produced using the ingot, and a method for fabricating the silicon carbide crystal ingot.
摘要翻译： 具有大于或等于4英寸的表面，具有大于或等于1×1015原子/ cm3且小于或等于1×1020原子/ cm3的n型掺杂剂浓度的碳化硅晶锭，金属原子 浓度大于或等于1×1014原子/ cm3且小于或等于1×1018原子/ cm3，并且不超过n型掺杂剂浓度，并且小于或等于1×1017原子的金属原子浓度梯度 /（cm 3·mm），使用该锭制造的碳化硅单晶晶片和制造碳化硅晶体锭的方法。
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10.发明申请公开(公告)号：US20120315427A1
公开(公告)日：2012-12-13
申请号：US13473936
申请日：2012-05-17
摘要： A single crystal silicon carbide substrate has a 4H-polytype crystal structure, has with nitrogen atoms doped as a conduction impurity with an atomic concentration of more than 1×1016/cm3, and has a main surface containing a circle having a diameter of 5 cm. The single crystal silicon carbide substrate includes only one of a facet region and a non-facet region. Thus, variation in nitrogen atom concentration in the single crystal silicon carbide substrate can be suppressed.
摘要翻译： 单晶碳化硅基板具有4H型多晶型结构，其氮原子掺杂为原子浓度大于1×1016 / cm3的导电杂质，并且具有包含直径为5cm的圆的主表面 。 单晶碳化硅衬底仅包括小面区域和非面区域中的一个。 因此，能够抑制单晶碳化硅基板的氮原子浓度的变化。
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