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公开(公告)号：US4904571A
公开(公告)日：1990-02-27
申请号：US219638
申请日：1988-07-15
CPC分类号： G03F7/425 , H05K3/0073
摘要： A remover solution for photoresist comprising (a) a solvent which is typically water, (b) an inorganic or organic alkaline compound such as sodium and potassium hydroxides, and (c) a borohydride compound such as sodium and lithium borohydrides and organic amine borane compounds. When used for removing patterned photoresist layer in the manufacturing process of, for example, electronic circuit board substrates. The method gives quite satisfactory results without discoloration or denaturation of the copper surface and solder surface, consequently leading to the production of high-quality products.
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2.发明授权Liquid composition for forming a coating film of organopolysiloxane and method for the preparation thereof 失效用于形成有机聚硅氧烷的涂膜的液体组合物及其制备方法
公开(公告)号：US4694040A
公开(公告)日：1987-09-15
申请号：US902029
申请日：1986-08-25
IPC分类号： C08G77/00 , C08G77/06 , C09D183/04 , C09D183/14 , C08K5/05
CPC分类号： C09D183/14
摘要： The invention provides a novel means for providing a highly heat-resistant and corrosion-resistant coating film on the surface of a substrate such as a semiconductor silicon wafer or glass plate by coating the surface with a liquid coating composition which is a solution of an oligomeric organopolysiloxane as a partial dehydration-condensation product of a monohydrocarbylsilane triol RSi(OH).sub.3, optionally, with admixture of a dihydrocarbylsilane diol R.sub.2 Si(OH).sub.2, R being a monovalent hydrocarbon group, e.g. methyl or phenyl, in an organic solvent followed by baking of the coated substrate to convert the coating layer into a cured resin film.
摘要翻译： 本发明提供了一种用于通过用液体涂料组合物涂覆表面而在诸如半导体硅晶片或玻璃板的基材的表面上提供高耐热和耐腐蚀的涂膜的新颖方法，该液体涂料组合物是低聚物 作为单烃基硅烷三醇RSi（OH）3的部分脱水缩合产物的有机聚硅氧烷，任选地与二烃基硅烷二醇R2Si（OH）2的混合物，R是一价烃基，例如 甲基或苯基，然后烘烤涂布的基材，将涂层转化为固化的树脂膜。
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3.发明授权Method for providing a pattern-wise photoresist layer on a substrate plate and a surface-protected substrate plate therefor 失效在基板上提供图案化的光致抗蚀剂层的方法和用于其的表面保护的基板
公开(公告)号：US4557996A
公开(公告)日：1985-12-10
申请号：US614655
申请日：1984-05-29
申请人： Toshimi Aoyama , Hiroyuki Tohda , Kazuo Kato , Hisashi Nakane
发明人： Toshimi Aoyama , Hiroyuki Tohda , Kazuo Kato , Hisashi Nakane
CPC分类号： G03F7/095 , G03F7/091 , H05K3/064 , H05K2203/0577 , H05K2203/066
摘要： The invention provides an improved method for the so-called dry-film process for forming a pattern-wise photoresist layer on the substrate surface in which a substrate is overlaid and laminated with a preformed film of a photosensitive composition called a dry film and photolithographically processed. In the inventive method, different from conventional dry-film processes, the substrate plate is first provided with a protecting layer of a photosensitive composition containing a halation inhibitor and the lamination with a dry film is performed without removing the protecting layer. After pattern-wise exposure to light, development of the photosensitive layer is undertaken by use of a developer solvent capable of dissolving both of the protecting layer and the pattern-forming layer. Despite the intervention of the protecting layer, the resolving power and image reproducibility are excellent.
摘要翻译： 本发明提供了一种用于在衬底表面上形成图案化光致抗蚀剂层的所谓干膜工艺的改进方法，其中衬底被覆盖并与预先形成的称为干膜的感光组合物的膜层压并且光刻加工 。 在本发明的方法中，与传统的干膜工艺不同，首先提供含有防晕抑制剂的感光组合物的保护层，并且在不除去保护层的情况下进行与干膜的层压。 在图案曝光之后，通过使用能够溶解保护层和图案形成层两者的显影剂溶剂进行感光层的显影。 尽管保护层的干预，分辨率和图像再现性都很好。
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公开(公告)号：US4277525A
公开(公告)日：1981-07-07
申请号：US133092
申请日：1980-03-24
申请人： Muneo Nakayama , Toshihiro Nishimura , Hisashi Nakane , Shozo Toda , Yoshio Hotta , Mitsuaki Minato
发明人： Muneo Nakayama , Toshihiro Nishimura , Hisashi Nakane , Shozo Toda , Yoshio Hotta , Mitsuaki Minato
IPC分类号： C08G77/00 , C08G77/02 , C08G77/06 , C09D183/00 , C09D183/02 , C09D183/04 , C09D183/14 , B05D3/02
CPC分类号： C09D183/14 , C09D183/02 , C09D183/04
摘要： Liquid compositions suitable for providing silica-based coating films on to various substrate surfaces are prepared by the reaction of an alkoxy-containing silane, a lower carboxylic acid and an alcohol in the presence of a reaction accelerator which is an organic acid different from the above mentioned lower carboxylic acid. The reaction proceeds very smoothly even in the absence of any halogen-containing compounds, and the resultant liquid coating compositions are free from the problem of corrosion due to the presence of a halogen-containing ingredient.
摘要翻译： 适用于在各种基材表面上提供二氧化硅基涂膜的液体组合物是通过含有烷氧基的硅烷，低级羧酸和醇在与上述不同的有机酸的反应促进剂存在下反应来制备的 提到的低级羧酸。 即使不存在任何含卤素化合物，反应也非常顺利，所得到的液体涂料组合物由于含卤素成分的存在而没有腐蚀的问题。
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公开(公告)号：US4245154A
公开(公告)日：1981-01-13
申请号：US919856
申请日：1978-06-28
申请人： Akira Uehara , Hiroyuki Kiyota , Hisashi Nakane , Shozo Toda
发明人： Akira Uehara , Hiroyuki Kiyota , Hisashi Nakane , Shozo Toda
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , G02B5/14
CPC分类号： H01J37/32935
摘要： An improved apparatus for plasma treatment of silicon semiconductor wafers is proposed in which the end point of the plasma etching or ashing can be readily detected by monitoring with an optical fiberscope penetrating the wall of the plasma reaction chamber with one terminal located inside the plasma reaction chamber with a condenser lens attached thereto and the other terminal located outside the plasma reaction chamber at a distanced position free from the influence of the high frequency electric field inherent to plasma generation which otherwise interferes with the photoelectric recording by the photocell connected to the outer terminal of the optical fiberscope.
摘要翻译： 提出了一种用于硅半导体晶片的等离子体处理的改进装置，其中等离子体蚀刻或灰化的终点可以通过利用位于等离子体反应室内的一个端子穿透等离子体反应室的壁的光纤穿透镜进行监测来容易地检测 其上安装有聚光透镜，而另一个端子位于等离子体反应室外部的距离位置，不受等离子体产生固有的高频电场的影响，否则会干扰连接到外部端子的光电池的光电记录 光纤镜。
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6.发明授权Negative-working photosensitive composition comprising a diphenylamine-melamine condensate and an azide compound 失效包含二苯胺 - 三聚氰胺缩合物和叠氮化合物的负性感光组合物
公开(公告)号：US4737438A
公开(公告)日：1988-04-12
申请号：US921790
申请日：1986-10-21
申请人： Naoki Ito , Koichiro Hashimoto , Wataru Ishii , Hisashi Nakane
发明人： Naoki Ito , Koichiro Hashimoto , Wataru Ishii , Hisashi Nakane
IPC分类号： G03F7/012 , G03F7/038 , H01L21/027 , G03C1/52
CPC分类号： G03F7/012
摘要： The negative-working photosensitive composition of the invention, which is suitable as a photoresist material in the photolithographic processing of semiconductor devices, comprises (a) a condensation product of a hydroxy-substituted diphenylamine compound such as 4-hydroxy diphenylamine and a methylol melamine or alkoxylated methylol melamine by the reaction in a medium of phosphoric or sulfuric acid and (b) an azide compound capable of strongly absorbing UV or far UV light. The composition gives a photoresist layer having high resistance against heat in the post-baking and the attack of gas plasma encountered in the dry etching for semiconductor processing.
摘要翻译： 在半导体器件的光刻处理中适合作为光致抗蚀剂材料的本发明的负作用光敏组合物包含（a）羟基取代的二苯胺化合物如4-羟基二苯胺和羟甲基三聚氰胺的缩合产物或 通过在磷酸或硫酸的介质中的反应和（b）能够强烈吸收UV或远紫外光的叠氮化合物的反应而得到的烷氧基化羟甲基三聚氰胺。 该组合物提供在后烘烤中具有高耐热性的光致抗蚀剂层和在用于半导体处理的干蚀刻中遇到的气体等离子体的侵蚀。
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公开(公告)号：USD291413S
公开(公告)日：1987-08-18
申请号：US689661
申请日：1985-01-08
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
设计人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
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8.发明授权
公开(公告)号：US4174222A
公开(公告)日：1979-11-13
申请号：US881260
申请日：1978-02-27
申请人： Takashi Komine , Akira Yokota , Hisashi Nakane , Shingo Asaumi , Noboru Okazaki
发明人： Takashi Komine , Akira Yokota , Hisashi Nakane , Shingo Asaumi , Noboru Okazaki
CPC分类号： G03F7/022
摘要： A gallic acid alkyl ester or a gallic acid aryl ester is reacted in an inert solvent with 3 equivalents of naphthoquinone-(1,2)-diazido-(2)-sulfonyl chloride in the presence of an alkali to effect sulfonylation of 3 hydroxyl groups in the gallic acid moiety whereby a photodecomposable naphthoquinone-(1,2)-diazido-(2)-sulfonic acid ester is obtained. The new naphthoquinonediazido derivative thus obtained is mixed with an alkali-soluble phenol resin such as m-cresol novolac resin or phenol novolac resin to prepare a positive-type photoresist composition having high sensitivity and high resolving power as well as excellent dimensional accuracy and etching-resistance. In addition, this composition forms a good photosensitive film and can be a good ink receptor.
摘要翻译： 没食子酸烷基酯或没食子酸芳基酯在惰性溶剂中与3当量萘醌 - （1,2） - 叠氮基 - （2） - 磺酰氯在碱存在下反应，以实现3个羟基的磺酰化 在没食子酸部分中得到可光分解的萘醌 - （1,2） - 二叠氮基 - （2） - 磺酸酯。 将由此获得的新的萘醌二叠氮基衍生物与间甲酚酚醛清漆树脂或苯酚酚醛清漆树脂等碱溶性酚树脂混合，制备具有高灵敏度和高分辨能力的正型光致抗蚀剂组合物，以及优异的尺寸精度和蚀刻 - 抵抗性。 此外，该组合物形成良好的感光膜，并且可以是良好的油墨受体。
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9.发明授权Positive-working photoresist containing o-naphthoquinone diazide sulfonic acid ester and novolak resin consisting of 35 to 43% m-cresol and 65 to 57% p-cresol with substantial absence of o-cresol 失效含有邻苯二酚二叠氮磺酸酯和酚醛清漆树脂的正性光致抗蚀剂由35至43％的间甲酚和65至57％的对甲酚组成，基本上不存在邻甲酚
公开(公告)号：US5281508A
公开(公告)日：1994-01-25
申请号：US935131
申请日：1992-08-21
申请人： Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Yoshiaki Arai , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
发明人： Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Yoshiaki Arai , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
摘要： A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g., VLSIs, with high fidelity is proposed. The composition comprises 100 parts by weight of a cresol novolac resin and 25-60 parts by weight of a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is prepared from a mixture of cresol isomers composed of 35-43% of m-cresol and 65-57% of p-cresol with substantial absence of o-cresol or composed of 35-43% of m-cresol, 65-57% of p-cresol and 1% or less of o-cresol.
摘要翻译： 提出了适用于制造高保真度的半导体器件（例如VLSI）中的精细图案化的正性光致抗蚀剂组合物。 该组合物包含100重量份的甲酚酚醛清漆树脂和25-60重量份的萘醌二叠氮化物磺酸酯作为感光组分，而甲酚酚醛清漆树脂组分由由35-43％ 的间甲酚和65-57％的对甲酚，基本上没有邻甲酚或由35-43％的间甲酚，65-57％的对甲酚和1％或更少的邻甲酚组成。
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10.发明授权Method of forming a positive resist pattern in photoresist of o-naphthoquinone diazide and bisazide with UV imaging exposure and far UV overall exposure 失效在邻苯二酚二叠氮化物和双叠氮化物的光致抗蚀剂中形成正型抗蚀剂图案的方法，其具有UV成像曝光和远紫外曝光
公开(公告)号：US4797348A
公开(公告)日：1989-01-10
申请号：US161213
申请日：1988-02-17
CPC分类号： G03F7/095
摘要： A dually photosensitive composition useful as a photoresist in the manufacture of ICs and the like electronic devices, which is positively photosensitive by exposure to ultraviolet in a relatively small dose but negatively photosensitive by exposure to ultraviolet in a substantially larger dose than above or by exposure to far ultraviolet light, is obtained by admixing a positive-type photoresist material comprising a novolac resin and an o-naphthoquinone diazide compound with a bisazide compound such as 4,4'-diazidodiphenyl sulfide. The inventive photosensitive composition provides a possibility of developing an ingenious technique for patterning of a photoresist layer on the substrate such as a checkboard-like patterned layer by use of a photomask of a line-and-space pattern.
摘要翻译： 在制造IC等电子装置中用作光致抗蚀剂的双重光敏组合物，其通过以相对较小的剂量暴露于紫外线但以相对较高的剂量暴露于紫外线但通过暴露于 通过将包含酚醛清漆树脂和邻萘醌二叠氮化合物的正型光致抗蚀剂材料与4,4'-二叠氮基二苯基硫化物等双叠氮化合物混合而得到。 本发明的光敏组合物提供了通过使用线间距图案的光掩模来开发用于图案化诸如棋盘状图案化层的基板上的光致抗蚀剂层的巧妙技术的可能性。
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