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公开(公告)号：US06634033B2
公开(公告)日：2003-10-21
申请号：US10182416
申请日：2002-07-29
IPC分类号： A47K1304
CPC分类号： F16F9/516 , F16F9/14 , F16F9/145 , F16F9/19 , F16F9/3221 , F16F2230/0064
摘要： A cam member 5 is disposed within a first chamber R1 such that the cam member 5 is rotatable but non-movable in the axial direction. The cam member 5 is non-rotatably connected to a rotor 3 through a connection shaft portion 52 piercing into a piston 4. A second cam mechanism 10 is disposed between the cam member 5 and the piston 4. When the cam mechanism 7 causes the piston 4 to move from the second chamber R2 side to the first chamber R1 side in accordance with rotation of the rotor 3 in one direction, the second cam mechanism 10 allows the piston 4 to move from the second chamber R2 side to the first chamber R1 side by the same amount of movement. When the second cam mechanism 10 causes the piston 4 to move from the first chamber R1 side to the second chamber R2 side in accordance with rotation of the rotor 3 in the other direction, the cam mechanism 7 allows the piston 4 to move from the first chamber R1 side to the second chamber R2 side by the same amount of movement.
摘要翻译： 凸轮构件5设置在第一室R1内，使得凸轮构件5可旋转但在轴向方向上不可移动。 凸轮构件5通过穿入活塞4的连接轴部52不可旋转地连接到转子3.第二凸轮机构10设置在凸轮构件5和活塞4之间。当凸轮机构7使活塞 4根据转子3沿一个方向的旋转，从第二室R2侧移动到第一室R1侧，第二凸轮机构10使活塞4从第二室R2侧移动到第一室R1侧 通过相同的运动量。 当第二凸轮机构10根据转子3沿另一方向的旋转使活塞4从第一室R1侧移动到第二室R2侧时，凸轮机构7使活塞4从第一室R1移动到第二室R2侧。 室R1侧到第二室R2侧移动相同量的运动。
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公开(公告)号：US07757626B2
公开(公告)日：2010-07-20
申请号：US11504581
申请日：2006-08-16
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译： 在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。 具有平坦形成的下表面的压板设置在保持台的上方。 压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。 压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。 根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。
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公开(公告)号：US20070048449A1
公开(公告)日：2007-03-01
申请号：US11504581
申请日：2006-08-16
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译： 在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。 具有平坦形成的下表面的压板设置在保持台的上方。 压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。 压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。 根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。
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![3-Hydroxymethylbenzo[b]thiophene derivatives and process for their preparation](/abs-image/US/2004/08/10/US06774245B2/abs.jpg.150x150.jpg)
4.发明授权3-Hydroxymethylbenzo[b]thiophene derivatives and process for their preparation 失效3-羟甲基苯并[b]噻吩衍生物及其制备方法公开(公告)号：US06774245B2
公开(公告)日：2004-08-10
申请号：US10332079
申请日：2003-01-02
申请人： Hiroshi Saitoh , Tsuyoshi Mizuno , Naoki Tsuchiya
发明人： Hiroshi Saitoh , Tsuyoshi Mizuno , Naoki Tsuchiya
IPC分类号： C07D33356
CPC分类号： C07D333/56
摘要： The present invention is a method of producing a 3-hydroxymethyl-benzo[b]thiophene derivative without the possible concomitant formation of isomers, which comprises selectively cyclizing a sulfoxide having X shown in the reaction scheme below: wherein R1 to R3 are, same or independently, a hydrogen atom, an alkyl group having 1 to 4 carbons, a trihalomethyl group, an alkoxy group having 1 to 4 carbons, an alkylthio group having 1 to 4 carbons, or a trihalomethoxy group; R4 is an acyl group; X is a halogen atom, a hydroxy group, an amino group, a mercapto group, an alkylthio group having 1 to 9 carbons, an acyloxy group having 1 to 9 carbons, an acylamino group having 1 to 9 carbons, or a trihalomethoxy group.
摘要翻译： 本发明是一种不含可能伴随形成异构体的3-羟甲基 - 苯并[b]噻吩衍生物的制备方法，该方法包括选择性环化下述反应方案中所示的具有X的亚砜：其中R1至R3相同或相同 独立地为氢原子，碳原子数1〜4的烷基，三卤代甲基，碳原子数1〜4的烷氧基，碳原子数1〜4的烷硫基或三卤甲氧基。 R4是酰基; X是卤素原子，羟基，氨基，巯基，碳原子数1〜9的烷硫基，碳原子数1〜9的酰氧基，碳原子数1〜9的酰氨基或三卤代甲氧基。
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公开(公告)号：US20100221436A1
公开(公告)日：2010-09-02
申请号：US12781867
申请日：2010-05-18
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译： 在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。 具有平坦形成的下表面的压板设置在保持台的上方。 压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。 压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。 根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。
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公开(公告)号：US20080008835A1
公开(公告)日：2008-01-10
申请号：US11562909
申请日：2006-11-22
申请人： Shouichi TERADA , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi TERADA , Tsuyoshi Mizuno , Takeshi Uehara
CPC分类号： H01L21/316 , H01L21/31055 , H01L21/31111 , H01L21/6715
摘要： In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.
摘要翻译： 在将涂布液在其表面上具有凹凸的基板供给到基板的表面上形成涂膜的基板处理方法中，将涂布液供给到旋转基板上，形成涂膜 加热衬底的前表面和其上形成有涂膜的衬底以调节涂膜的蚀刻条件。 接下来，将蚀刻溶液供给到旋转基板上以蚀刻涂膜，然后将该涂布液供给到基板，在基板的前表面形成平坦的涂膜。 此后，加热基板以固化涂膜。 这样使涂膜均匀，高精度地平坦化，而不经历诸如化学机械抛光的高负载过程。
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公开(公告)号：US20050230886A1
公开(公告)日：2005-10-20
申请号：US11152209
申请日：2005-06-15
CPC分类号： B22D41/28
摘要： It is an object to form a plate for a sliding nozzle apparatus in a shape for decreasing extreme erosion and extend durability of the plate to enable cost reduction, the sliding-nozzle plate having dimensions (unit length is mm) as indicated in following equations: a dimension from the center position X of the nozzle hole to a closest end of the plate for the sliding nozzle in the longitudinal direction is a sum of a dimension “b” from the center position X to an ideal circle with the position X as the center and a dimension “d” from the ideal circle to the closest end in the longitudinal direction, a dimension from the center position X and to a center position Y is a dimension S of the stroke, and a dimension from the center position Y to a closest end of the plate for the sliding nozzle in the longitudinal direction is a dimension “c”, where b: a+30˜40, c: 0.75a+20˜30, d: 0.5a, S: 2a+m, and m: 15˜25.
摘要翻译： 本发明的目的是形成滑动喷嘴装置的板，其具有减小极限侵蚀的形状并延长板的耐用性，以便降低成本，滑动喷嘴板的尺寸（单位长度为mm）如下面所示： 从喷嘴孔的中心位置X到纵向的滑动板的最近端的尺寸是从中心位置X到理想圆的尺寸“b”与位置X为 中心和从理想圆到纵向最近端的尺寸“d”，从中心位置X到中心位置Y的尺寸是行程的尺寸S，并且从中心位置Y到 用于滑动喷嘴的纵向方向的最靠近的端部是尺寸“c”，其中b：a + 30〜40，c：0.75a + 20〜30，d：0.5a，S：2a + m， m：15〜25。
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公开(公告)号：US08864933B2
公开(公告)日：2014-10-21
申请号：US12908698
申请日：2010-10-20
申请人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
IPC分类号： C23F1/08 , H01L21/316 , H01L21/3105 , H01L21/311 , H01L21/67
CPC分类号： H01L21/316 , H01L21/31055 , H01L21/31111 , H01L21/6715
摘要： In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.
摘要翻译： 在将涂布液在其表面上具有凹凸的基板供给到基板的表面上形成涂膜的基板处理方法中，将涂布液供给到旋转基板上，形成涂膜 加热衬底的前表面和其上形成有涂膜的衬底以调节涂膜的蚀刻条件。 接下来，将蚀刻溶液供给到旋转基板上以蚀刻涂膜，然后将该涂布液供给到基板，在基板的前表面形成平坦的涂膜。 此后，加热基板以固化涂膜。 这样使涂膜均匀，高精度地平坦化，而不经历诸如化学机械抛光的高负载过程。
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公开(公告)号：US07926444B2
公开(公告)日：2011-04-19
申请号：US11585863
申请日：2006-10-25
申请人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
CPC分类号： H01L21/6715
摘要： It is an object to provide a method for forming a thin film having a uniform thickness so as to follow asperities of a surface of a wafer to be processed and to provide a film-forming device used for the method. The film-forming device includes a treatment chamber for receiving a wafer and isolating the wafer from the air; a solvent-gas-supplying portion for supplying a solvent gas into the treatment chamber; a chuck for rotatably holding the wafer so that the downward-facing surface of the substrate is the surface on which a thin film is formed; a coating-solution-supplying portion for supplying a coating solution as a mist of charged particles toward the surface of the wafer; and a charging portion for charging the wafer with an electrical potential opposite to the charge of the particles.
摘要翻译： 本发明的目的是提供一种形成具有均匀厚度的薄膜的方法，以便遵循待加工晶片的表面的粗糙度，并提供用于该方法的成膜装置。 成膜装置包括用于接收晶片并将晶片与空气隔离的处理室; 用于将溶剂气体供给到处理室中的溶剂气体供给部; 用于可旋转地保持晶片的卡盘，使得基板的朝下的表面是其上形成有薄膜的表面; 涂料溶液供给部，其将作为带电粒子的雾的涂布溶液供给到所述晶片的表面; 以及用于对与晶粒的电荷相反的电位对晶片充电的充电部分。
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公开(公告)号：US07497908B2
公开(公告)日：2009-03-03
申请号：US10875075
申请日：2004-06-23
申请人： Tsuyoshi Mizuno , Yuuichi Mikata , Kimihide Saito
发明人： Tsuyoshi Mizuno , Yuuichi Mikata , Kimihide Saito
IPC分类号： B05C5/02
CPC分类号： H01L21/6715
摘要： Film coating unit has a substrate holder for holding a wafer, a coating solution discharge nozzle, and anti-drying boards opposed to a surface of the wafer. The coating solution is applied to the surface of the wafer in a direction from a front end toward a rear end of the wafer while relatively moving the substrate holder with respect to the coating solution discharge nozzle. During that time, the anti-drying boards are disposed at height of maximum 2 mm from the surface of the wafer so as to form dense atmosphere of a solvent between the surface of the wafer and the anti-drying board. Thereby the coating solution on or over the surface of the wafer is restrained from being dried and a coating film is formed with even thickness on or over the surface of the wafer.
摘要翻译： 薄膜涂布单元具有用于保持晶片的基板保持器，涂布液排出喷嘴和与晶片的表面相对的防干燥板。 在将基板保持件相对于涂布液排出喷嘴相对移动的同时，将涂布液从晶片的前端朝向后端的方向施加到晶片的表面。 在此期间，防干燥板设置在与晶片表面最大2mm的高度处，以在晶片表面和防干燥板之间形成致密的溶剂气氛。 由此，抑制晶片表面上或上方的涂层溶液的干燥，并且在晶片的表面上或上方形成均匀厚度的涂膜。
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