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47 条记录 (耗时 0.016 秒)

    Projecting type charged particle microscope and projecting type substrate inspection system
    3.
    发明授权
    Projecting type charged particle microscope and projecting type substrate inspection system 有权
    投影式带电粒子显微镜和突出型基片检查系统

    公开(公告)号：US06310341B1

    公开(公告)日：2001-10-30

    申请号：US09253456

    申请日：1999-02-22

    申请人： Hideo Todokoro ,  Tohru Ishitani ,  Yasutsugu Usami ,  Shunroku Taya ,  Hiroyuki Shinada ,  Taku Ninomiya ,  Tsuyoshi Ohnishi

    发明人： Hideo Todokoro ,  Tohru Ishitani ,  Yasutsugu Usami ,  Shunroku Taya ,  Hiroyuki Shinada ,  Taku Ninomiya ,  Tsuyoshi Ohnishi

    IPC分类号： H01J4944

    CPC分类号： H01J37/28 ,  H01J37/05

    摘要： An irradiation electron beam emitted from an electron gun is deflected by an energy filter, and passes through a first projective lens and an objective lens, and then irradiated onto a sample to produce secondary electrons. The secondary electron beam accelerated by a negative voltage applied to the sample passes through the objective lens and the first projective lens, and deflected by the energy filter to be energy dispersed. Only the secondary electrons having a specified energy pass through energy selecting aperture, and further pass through a second projective lens to form a projected image of the secondary electrons on an imager. Such an electron-optical system may be used for dimension evaluation or inspection of semiconductor substrates.

    摘要翻译： 从电子枪发射的照射电子束被能量过滤器偏转，并通过第一投射透镜和物镜，然后照射到样品上以产生二次电子。 施加到样品的负电压加速的二次电子束通过物镜和第一投射透镜，并被能量过滤器偏转以进行能量分散。 只有具有指定能量的二次电子通过能量选择孔，并且进一步通过第二投影透镜以在成像器上形成二次电子的投影图像。 这样的电子 - 光学系统可以用于半导体衬底的尺寸评估或检查。

    Signal generator and method of generating signal voltages using the same
    4.
    发明授权
    Signal generator and method of generating signal voltages using the same 失效
    信号发生器及使用其产生信号电压的方法

    公开(公告)号：US5198672A

    公开(公告)日：1993-03-30

    申请号：US391292

    申请日：1989-08-09

    申请人： Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Moritoshi Yasunaga

    发明人： Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Moritoshi Yasunaga

    IPC分类号： G01R31/302

    CPC分类号： G01R31/302

    摘要： A device for generating voltage signals in a semiconductor device upon irradiation with a charged particle beam, wherein a circuit for converting a beam current of the irradiated charged particle beam into the voltage signals is constituted by a bipolar transistor and a load device contained in the semiconductor device, and a portion of the line pattern connected to the base of the bipolar transistor is irradiated with the charged particle beam, so that signals are generated at high speeds even by using a weak charged particle beam without permitting the device to be broken down.

    摘要翻译： 一种用于在照射带电粒子束时在半导体器件中产生电压信号的装置，其中用于将照射的带电粒子束的束电流转换成电压信号的电路由双极晶体管和包含在半导体中的负载装置构成 器件，并且连接到双极晶体管的基极的线图案的一部分被带电粒子束照射，使得即使通过使用弱带电粒子束也不会使器件被分解而以高速产生信号。

    Specimen or substrate cutting method using focused charged particle beam and secondary ion spectroscopic analysis method utilizing the cutting method
    5.
    发明授权
    Specimen or substrate cutting method using focused charged particle beam and secondary ion spectroscopic analysis method utilizing the cutting method 失效
    使用聚焦带电粒子束的样品或基板切割方法和利用切割方法的二次离子光谱分析方法

    公开(公告)号：US4939364A

    公开(公告)日：1990-07-03

    申请号：US253558

    申请日：1988-10-05

    申请人： Tohru Ishitani ,  Tsuyoshi Ohnishi ,  Yoshimi Kawanami

    发明人： Tohru Ishitani ,  Tsuyoshi Ohnishi ,  Yoshimi Kawanami

    IPC分类号： H01J37/08 ,  C23F4/00 ,  G01Q30/10 ,  H01J37/305 ,  H01L21/30 ,  H01L21/302 ,  H01L21/3065

    CPC分类号： H01J37/3056

    摘要： A specimen or substrate cutting method of cutting or processing a predetermined portion of a specimen or substrate in a direction of depth thereof by generating a focused charged particle beam from a particle beam source and irradiating the predetermined portion of the specimen or substrate with the focused charged particle beam is disclosed in which a particle species of the charged particle beam is selected such that each of the melting point of the particle species itself and the melting point of an alloy or compound of the particle species and constituent atoms of the specimen or substrate is not lower than 3/2 times of the temperature of the specimen or substrate in units of absolute temperature. A secondary ion mass-spectroscopic analysis method is also disclosed in which the charged particle beam is used as a probe to mass-analyze secondary charged ion successively generated from the cut portion of the specimen or substrate.

    摘要翻译： 一种样品或基材切割方法，其通过从粒子束源产生聚焦的带电粒子束来在其深度方向上切割或加工样品或基底的预定部分，并用聚焦的带电量照射样品或基底的预定部分 公开了粒子束，其中选择带电粒子束的粒子种类，使得颗粒物质本身的熔点和样品或基底的颗粒物质的合金或化合物的熔点和成分原子的熔点为 不低于样品或基材温度的绝对温度的3/2倍。 还公开了二次离子质谱分析方法，其中使用带电粒子束作为探针，对从样品或基底的切割部分连续产生的二次带电离子进行质量分析。

    Methods for sample preparation and observation, charged particle apparatus
    6.
    发明授权
    Methods for sample preparation and observation, charged particle apparatus 有权
    样品制备和观察方法，带电粒子装置

    公开(公告)号：US07482586B2

    公开(公告)日：2009-01-27

    申请号：US11482094

    申请日：2006-07-07

    申请人： Tohru Ishitani ,  Uki Kabasawa ,  Tsuyoshi Ohnishi

    发明人： Tohru Ishitani ,  Uki Kabasawa ,  Tsuyoshi Ohnishi

    IPC分类号： G01N31/00 ,  G01N33/00 ,  G01N23/00 ,  G21K7/00 ,  G21K5/10 ,  H01J37/08

    CPC分类号： G01N23/225 ,  H01J37/3005 ,  H01J37/3056 ,  H01J2237/1536 ,  H01J2237/31745

    摘要： In an SEM observation in a depth direction of a cross section processed by repeated FIB cross-sectioning and SEM observation to correct a deviation in an observation field of view and a deviation in focus, are corrected, the deviations occurring when a processed cross section moves in the depth direction thereof; information on a height and a tilt of a surface of cross section processing area is calculated before the processing, the above information is used, the deviation in a field of view and the deviation in focus in SEM observation, which correspond to an amount of movement of the cross section at a time of the processing, are predicted, and the SEM is controlled based on the predicted values.

    摘要翻译： 在通过重复的FIB横截面处理的横截面的深度方向的SEM观察和用于校正观察视场偏离和聚焦偏差的SEM观察中，校正了当处理的横截面移动时发生的偏差 在其深度方向; 在处理之前计算关于横截面处理区域的表面的高度和倾斜的信息，使用上述信息，SEM视场中的偏差和对应于移动量的SEM观察中的偏差 的预测值，并且根据预测值来控制SEM。

    Method for separating specimen and method for analyzing the specimen separated by the specimen separating method
    8.
    发明授权
    Method for separating specimen and method for analyzing the specimen separated by the specimen separating method 失效
    分离样品的方法和分离样品分离方法的方法

    公开(公告)号：US5270552A

    公开(公告)日：1993-12-14

    申请号：US933232

    申请日：1992-08-21

    申请人： Tsuyoshi Ohnishi ,  Tohru Ishitani

    发明人： Tsuyoshi Ohnishi ,  Tohru Ishitani

    IPC分类号： G01N1/28 ,  G01N23/22 ,  H01J37/20 ,  H01J37/305 ,  H01J37/31

    CPC分类号： H01J37/3056 ,  G01N23/2202 ,  H01J37/20 ,  H01J37/31 ,  H01J2237/2007 ,  H01J2237/20264

    摘要： When a desired portion is separated from an integrated circuit chip or a semiconductor wafer, the portion is separated without dividing the chip or the wafer, so that the separated specimen can be moved to a desired position, and the separated specimen can be set to a desired attitude. Therefore, various analyses on the specimen through TEM, SEM, SIMS and so on can be carried out. A minute piece of specimen is cut and separated from the substrate of a specimen by use of a three-dimensional minute processing technique and a micro-manipulation technique. A surface of the specimen is subjected to an FIB processing from at least two kinds of angles, the separated specimen being mechanically connected to an external probe in a step for separating a part of the specimen including a portion to be analyzed. The separated specimen is supported by the probe, being moved. The separated specimen is subjected to analysis through TEM, SEM, SIMS, etc.

    摘要翻译： 当将期望的部分与集成电路芯片或半导体晶片分离时，该部分被分离而不分割芯片或晶片，使得分离的样本可以移动到期望的位置，并且分离的样本可以被设置为 期望的态度 因此，可以通过TEM，SEM，SIMS等对样品进行各种分析。 通过使用三维微细处理技术和微操作技术，将一分片样品切割并与样品的基底分离。 将样品的表面从至少两种角度进行FIB处理，将分离出的试样机械地连接到外部探针上，以分离包含待分析部分的试样的一部分的步骤。 分离的样品由探头支撑，移动。 分离的样品通过TEM，SEM，SIMS等进行分析

    Ion-beam machining method and apparatus
    10.
    发明授权
    Ion-beam machining method and apparatus 失效
    离子束加工方法和装置

    公开(公告)号：US4936968A

    公开(公告)日：1990-06-26

    申请号：US324657

    申请日：1989-03-17

    申请人： Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Yoshimi Kawanami

    发明人： Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Yoshimi Kawanami

    IPC分类号： H01J37/305 ,  H01J37/317 ,  H01L21/302 ,  H01L21/3065

    CPC分类号： H01J37/3056

    摘要： In an ion-beam machining method and apparatus of effecting sputtering by deflecting a focused ion beam and scanning it on a material surface, the relationship between the diameter d of the beam on the material surface and the height h of a stepped portion formed by each beam scan is changed from h.gtoreq.d to h

    摘要翻译： 在通过使聚焦离子束偏转并将其扫描在材料表面上来实现溅射的离子束加工方法和装置中，材料表面上的束的直径d与由每个形成的台阶部分的高度h之间的关系 根据正在形成的孔的深度的增加，光束扫描从h> / = d变为h << d，从而控制再次沉积在孔的侧壁上的溅射粒子的数量。 该装置包括用于控制离子束偏转器和消隐电极的偏转控制器，以便改变上述d和h之间的关系。