公开(公告)号：US06911386B1

公开(公告)日：2005-06-28

申请号：US10176943

申请日：2002-06-21

申请人： Tze-Liang Lee ,  Chao-Chen Chen

发明人： Tze-Liang Lee ,  Chao-Chen Chen

IPC分类号： H01L21/44 ,  H01L23/48 ,  H01L23/525

CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： A new process flow is provided for the creation of a fuse contact and a bond pad. The invention starts with a semiconductor substrate over the surface of which is provided top level metal and fuse metal in the surface of a layer of insulation deposited over the surface of the substrate. A first etch stop layer is deposited over the surface of the layer of insulation over which a first passivation layer is deposited, an opening is created through these layers exposing the top level metal. A metal plug is created overlying the exposed surface of the top level metal. A stack of a patterned and etched hard mask layers, having been deposited at part of the creation of the metal plug and overlying a layer of metal plug material, remains in place over the surface of the created metal plug. A second layer of passivation material is deposited, the second layer of passivation is patterned and etched exposing the surface of the first layer of passivation overlying the fuse metal and exposing the surface of the stack of hard mask layers overlying the created metal plug. The stack of hard mask layers is then removed from the surface of the metal plug, exposing the surface of the metal plug to serve as a contact pad and further reducing the thickness of the first layer of passivation over the surface of the fuse metal, making the fuse more accessible for fuse blowing.

摘要翻译： 提供了一种新的工艺流程来创建保险丝触点和接合垫。 本发明从其表面上提供顶层金属和熔丝金属的半导体衬底开始沉积在衬底表面上的绝缘层表面。 第一蚀刻停止层沉积在绝缘层的表面上，在绝缘层的表面上沉积第一钝化层，通过暴露顶层金属的这些层产生开口。 在顶层金属的暴露表面上形成一个金属塞。 已经沉积在金属插塞的一部分并且覆盖一层金属插塞材料的图案和蚀刻的硬掩模层的堆叠保持在所产生的金属插塞的表面上的适当位置。 沉积第二层钝化材料，第二层钝化被图案化和蚀刻，暴露第一层钝化层的表面，覆盖熔丝金属并暴露覆盖所产生的金属插塞的硬掩模层堆叠的表面。 然后从金属塞的表面去除堆叠的硬掩模层，暴露金属塞的表面以用作接触焊盘，并进一步减小熔丝金属表面上的第一钝化层的厚度，使得 保险丝更容易熔断。

公开(公告)号：US20050218476A1

公开(公告)日：2005-10-06

申请号：US11132086

申请日：2005-05-18

申请人： Tze-Liang Lee ,  Chao-Chen Chen

发明人： Tze-Liang Lee ,  Chao-Chen Chen

IPC分类号： H01L21/44 ,  H01L23/48 ,  H01L23/525

CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： A new process flow is provided for the creation of a fuse contact and a bond pad. The invention starts with a semiconductor substrate over the surface of which is provided top level metal and fuse metal in the surface of a layer of insulation deposited over the surface of the substrate. A first etch stop layer is deposited over the surface of the layer of insulation over which a first passivation layer is deposited, an opening is created through these layers exposing the top level metal. A metal plug is created overlying the exposed surface of the top level metal. A stack of a patterned and etched hard mask layers, having been deposited at part of the creation of the metal plug and overlying a layer of metal plug material, remains in place over the surface of the created metal plug. A second layer of passivation material is deposited, the second layer of passivation is patterned and etched exposing the surface of the first layer of passivation overlying the fuse metal and exposing the surface of the stack of hard mask layers overlying the created metal plug. The stack of hard mask layers is then removed from the surface of the metal plug, exposing the surface of the metal plug to serve as a contact pad and further reducing the thickness of the first layer of passivation over the surface of the fuse metal, making the fuse more accessible for fuse blowing.

摘要翻译： 提供了一种新的工艺流程来创建保险丝触点和接合垫。 本发明从其表面上提供顶层金属和熔丝金属的半导体衬底开始沉积在衬底表面上的绝缘层表面。 第一蚀刻停止层沉积在绝缘层的表面上，在绝缘层的表面上沉积第一钝化层，通过暴露顶层金属的这些层产生开口。 在顶层金属的暴露表面上形成一个金属塞。 已经沉积在金属插塞的一部分并且覆盖一层金属插塞材料的图案和蚀刻的硬掩模层的堆叠保持在所产生的金属插塞的表面上的适当位置。 沉积第二层钝化材料，第二层钝化被图案化和蚀刻，暴露第一层钝化层的表面，覆盖熔丝金属并暴露覆盖所产生的金属插塞的硬掩模层堆叠的表面。 然后从金属塞的表面去除堆叠的硬掩模层，暴露金属塞的表面以用作接触焊盘，并进一步减小熔丝金属表面上的第一钝化层的厚度，使得 保险丝更容易熔断。

公开(公告)号：US07247939B2

公开(公告)日：2007-07-24

申请号：US10405593

申请日：2003-04-01

申请人： Yi-Chen Huang ,  Chao-Chen Chen

发明人： Yi-Chen Huang ,  Chao-Chen Chen

IPC分类号： H01L23/48 ,  H01L27/15

CPC分类号： H01L21/76816 ,  H01L21/31612 ,  H01L21/31629 ,  H01L23/5226 ,  H01L23/53295 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/48463 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01072 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/00014

摘要： A method for forming a metal filled semiconductor feature with improved structural stability including a semiconductor wafer having an anisotropically etched opening formed through a plurality of dielectric insulating layers revealing a first etching resistant layer overlying a conductive area; a plurality of dielectric insulating layers sequentially stacked to have alternating etching rates to a preferential etching process; subjecting the anisotropically etched opening to the preferential etching process whereby the sidewalls of the anisotropically etched opening are preferentially etched to produce etched dielectric insulating layers to form roughened sidewall surfaces; anisotropically etching through the etching resistant layer to reveal the conductive area; and, filling the anisotropically etched opening with a metal to form a metal filled semiconductor feature.

摘要翻译： 一种用于形成具有改善的结构稳定性的金属填充半导体特征的方法，包括：通过多个介电绝缘层形成的具有各向异性蚀刻的开口的半导体晶片，该绝缘蚀刻开口露出覆盖导电区域的第一耐蚀刻层; 多个介质绝缘层，其顺序层叠以具有交替的蚀刻速率到优先蚀刻工艺; 将各向异性蚀刻的开口经受优先蚀刻工艺，由此优先蚀刻各向异性蚀刻的开口的侧壁以产生蚀刻的电介质绝缘层以形成粗糙化的侧壁表面; 通过耐腐蚀层各向异性蚀刻以显示导电面积; 并且用金属填充各向异性蚀刻的开口以形成金属填充的半导体特征。

公开(公告)号：US5849582A

公开(公告)日：1998-12-15

申请号：US847224

申请日：1997-05-01

申请人： Chao-Chen Chen ,  Wei-Kay Chiu

发明人： Chao-Chen Chen ,  Wei-Kay Chiu

IPC分类号： G03F7/40 ,  G03C5/00

CPC分类号： G03F7/40

摘要： A method and apparatus for curing a photoresist that is deposited in liquid form and spun on a surface of a wafer leaving a thin film to be cured. This invention teaches methods for curing the resist with improved thickness control using front side heating.

公开(公告)号：US07737538B2

公开(公告)日：2010-06-15

申请号：US11979809

申请日：2007-11-08

申请人： Chao-Chen Chen ,  Lin-Gi Yang ,  Chia-Chi Chou ,  Shih-Chieh Teng

发明人： Chao-Chen Chen ,  Lin-Gi Yang ,  Chia-Chi Chou ,  Shih-Chieh Teng

IPC分类号： H01L23/495 ,  H01L21/00

CPC分类号： H01L27/14618 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor package. The semiconductor package of the invention comprises: a substrate comprising at least one exposed area with photosensitive devices; a cover for isolating the exposed area from the external atmosphere, wherein one of either the substrate or the cover is a base, and the other is a top structure; and a dam formed on the base to form a cavity, wherein the top of the dam has a recess, the dam is attached the top structure by an adhesive, and the cavity corresponds to the exposed area.

摘要翻译： 半导体封装。 本发明的半导体封装包括：包含至少一个具有光敏器件的暴露区域的衬底; 用于将暴露区域与外部空气隔离的盖子，其中所述基板或所述盖板中的一个是基座，而另一个是顶部结构; 和形成在基座上以形成空腔的坝，其中坝的顶部具有凹部，坝通过粘合剂附接到顶部结构，并且空腔对应于暴露的区域。

公开(公告)号：US20090121303A1

公开(公告)日：2009-05-14

申请号：US11979809

申请日：2007-11-08

申请人： Chao-Chen Chen ,  Lin-Gi Yang ,  Chia-Chi Chou ,  Shih-Chieh Teng

发明人： Chao-Chen Chen ,  Lin-Gi Yang ,  Chia-Chi Chou ,  Shih-Chieh Teng

IPC分类号： H01L31/0203 ,  H01L31/18

CPC分类号： H01L27/14618 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor package. The semiconductor package of the invention comprises: a substrate comprising at least one exposed area with photosensitive devices; a cover for isolating the exposed area from the external atmosphere, wherein one of either the substrate or the cover is a base, and the other is a top structure; and a dam formed on the base to form a cavity, wherein the top of the dam has a recess, the dam is attached the top structure by an adhesive, and the cavity corresponds to the exposed area.

摘要翻译： 半导体封装。 本发明的半导体封装包括：包含至少一个具有光敏器件的暴露区域的衬底; 用于将暴露区域与外部空气隔离的盖子，其中所述基板或所述盖板中的一个是基座，而另一个是顶部结构; 和形成在基座上以形成空腔的坝，其中坝的顶部具有凹部，坝通过粘合剂附接到顶部结构，并且空腔对应于暴露的区域。

公开(公告)号：US06458650B1

公开(公告)日：2002-10-01

申请号：US09908821

申请日：2001-07-20

申请人： Yi-Chen Huang ,  Li-Chih Chao ,  Chao-Chen Chen

发明人： Yi-Chen Huang ,  Li-Chih Chao ,  Chao-Chen Chen

IPC分类号： H01L218242

CPC分类号： H01L28/91 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/31629 ,  H01L21/3185 ,  H01L21/76802 ,  H01L21/76814

摘要： A new method is provided for the creation of an opening over which the second electrode of a MIM capacitor is to be deposited. The first electrode of the MIM is created in a first layer of Fluorine doped Silicon dioxide (SiO2) Glass (FSG) . A layer of insulation comprising silicon nitride is deposited over the surface of the first electrode. A second layer of Fluorine doped Silicon dioxide (SiO2) Glass (FSG) is deposited over the surface of the layer of silicon nitride, an etch stop layer of silicon nitride is deposited over the surface of the second layer of FSG. The layers of etch stop and the second layer of FSG are patterned and etched using a dry etch, stopping on the layer-of insulation and exposing the surface of the layer of insulation. Next-and of critical importance to the invention is a step of photoresist ashing and oxidation of the surface of the layer of silicon nitride. The layer of photoresist can now be removed while concurrently, using a wet strip, the layer of silicon nitride oxidation is removed from the surface of the layer of silicon nitride. The process of creating a MIM capacitor can then proceed by creating the second electrode of the MIM capacitor.

摘要翻译： 提供了一种新的方法，用于创建MIM电容器的第二电极将要沉积的开口。 MIM的第一电极在氟掺杂二氧化硅（SiO 2）玻璃（FSG）的第一层中产生。 包含氮化硅的绝缘层沉积在第一电极的表面上。 氟化二氧化硅（SiO 2）玻璃（FSG）的第二层沉积在氮化硅层的表面上，氮化硅的蚀刻停止层沉积在第二层FSG的表面上。 蚀刻停止层和FSG的第二层被图案化和蚀刻使用干蚀刻，停止在绝缘层上并暴露绝缘层的表面。 接下来对于本发明至关重要的是对氮化硅层的表面的光致抗蚀剂灰化和氧化的步骤。 现在可以同时去除光致抗蚀剂层，使用湿条，从氮化硅层的表面去除氮化硅层的氧化层。 然后可以通过产生MIM电容器的第二电极来进行制造MIM电容器的过程。

公开(公告)号：US20090104545A1

公开(公告)日：2009-04-23

申请号：US11976169

申请日：2007-10-22

申请人： Chao-Chen Chen ,  Joseph Lai ,  Cheng-Hong Yeh

发明人： Chao-Chen Chen ,  Joseph Lai ,  Cheng-Hong Yeh

IPC分类号： G03F1/00

CPC分类号： G02B5/201 ,  G02B5/223 ,  G02F1/133516 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

摘要： Embodiments disclose a method for fabricating a color filter, comprising: providing a substrate; forming a planarization layer on the substrate; forming a first color layer over the planarization layer; exposing and developing the first color layer to form a patterned first color filter unit over the planarization layer; forming a second color layer over the planarization layer and the patterned first color filter unit; exposing and developing the second color layer to form a patterned second color filter unit over the planarization layer; forming a third color layer over the planarization layer and the patterned first and second color filter units; and etching back or chemical mechanical polishing (CMP) the third color layer to form a patterned third color filter unit over the planarization layer.

摘要翻译： 实施例公开了一种制造滤色器的方法，包括：提供基板; 在所述基板上形成平坦化层; 在所述平坦化层上形成第一颜色层; 曝光和显影第一颜色层，以在平坦化层上形成图案化的第一滤色器单元; 在平坦化层和图案化的第一滤色器单元上形成第二颜色层; 曝光和显影第二颜色层以在平坦化层上形成图案化的第二滤色器单元; 在平坦化层和图案化的第一和第二滤色器单元上形成第三颜色层; 并对第三颜色层进行回蚀刻或化学机械抛光（CMP）以在平坦化层上形成图案化的第三滤色器单元。

公开(公告)号：US20060246727A1

公开(公告)日：2006-11-02

申请号：US11115693

申请日：2005-04-27

申请人： Ching-Hua Hsieh ,  Chao-Chen Chen ,  Shau-Lin Shue ,  Hun-Jan Tao ,  Mong-Song Liang

发明人： Ching-Hua Hsieh ,  Chao-Chen Chen ,  Shau-Lin Shue ,  Hun-Jan Tao ,  Mong-Song Liang

IPC分类号： H01L21/311 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/76873 ,  H01L21/02063 ,  H01L21/67207 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76843

摘要： An integrated apparatus comprises a plasma etching station, a wet cleaning station, a de-gassing station, a thin film deposition station, and a wafer transfer mechanism to automatically index wafers between the stations in a predetermined processing order.

摘要翻译： 集成装置包括等离子体蚀刻站，湿式清洁站，除气站，薄膜沉积站和晶片传送机构，用于以预定的处理顺序自动地在台站之间索引晶片。

公开(公告)号：US06273852B1

公开(公告)日：2001-08-14

申请号：US09521801

申请日：2000-03-09

申请人： Jorn Lehe ,  Chao-Chen Chen ,  Brian H. Luscombe

发明人： Jorn Lehe ,  Chao-Chen Chen ,  Brian H. Luscombe

IPC分类号： A61F200

CPC分类号： A61B17/0469 ,  A61B1/00087 ,  A61B1/042 ,  A61B1/307 ,  A61B17/06109 ,  A61B2017/00805 ,  A61B2017/06028 ,  A61B2017/06042 ,  A61B2017/06047 ,  A61B2017/06057 ,  A61B2017/0608 ,  A61B2017/06085 ,  A61B2090/306 ,  A61B2090/3614 ,  A61F2/0045 ,  Y10S128/25

摘要： A is a surgical instrument and method for treating female urinary stress incontinence. The instrument includes a curved needle-like element defining in part a curved shaft having a distal end and a proximal end. The diameter of the needle decreases from the proximal end to the distal end, and the needle terminates in a blunt tip. A tape attaches to the needle for implanting into the lower abdomen of a female to provide support to the urethra. The tape may be made from synthetic and natural materials. The needle and tape may also be modified to allow the surgeon to attach and detach the tape during the surgical operation.

摘要翻译： A是一种治疗女性尿失禁的手术器械和方法。 仪器包括弯曲的针状元件，其部分地限定具有远端和近端的曲轴。 针的直径从近端延伸到远端，并且针终止于钝头。 带子附着到针上，用于植入女性的下腹部以向尿道提供支撑。 胶带可以由合成和天然材料制成。 针和带也可以被修改以允许外科医生在外科手术期间附着和分离带。