公开(公告)号：US08779494B2

公开(公告)日：2014-07-15

申请号：US13426825

申请日：2012-03-22

申请人： Tzung-Han Lee ,  Chung-Lin Huang ,  Ron-Fu Chu

发明人： Tzung-Han Lee ,  Chung-Lin Huang ,  Ron-Fu Chu

IPC分类号： H01L29/94

CPC分类号： H01L27/10873 ,  H01L27/10885 ,  H01L27/10891

摘要： The instant disclosure relates to a high-k metal gate random access memory. The memory includes a substrate, a plurality of bit line units, source regions, gate structures, drain regions, word line units, and capacitance units. The substrate has a plurality of trenches, and the bit line units are arranged on the substrate. The source regions are disposed on the bit line units, and the gate structures are disposed on the source regions. Each gate structure has a metal gate and a channel area formed therein. The gate structures are topped with the drain regions. The word lines units are arranged between the source and drain regions. The capacitance units are disposed on the drain regions. Another memory is also disclosed, where each drain region and a portion of each gate structure are disposed in the respective capacitance unit, with the drain region being a lower electrode layer.

摘要翻译： 本公开涉及高k金属栅极随机存取存储器。 存储器包括衬底，多个位线单元，源极区，栅极结构，漏极区，字线单元和电容单元。 衬底具有多个沟槽，并且位线单元布置在衬底上。 源极区域设置在位线单元上，栅极结构设置在源极区域上。 每个栅极结构具有形成在其中的金属栅极和沟道区域。 栅极结构顶部带有漏极区域。 字线单元布置在源区和漏区之间。 电容单元设置在漏极区域上。 还公开了另一种存储器，其中每个漏极区域和每个栅极结构的一部分设置在相应的电容单元中，漏极区域是下部电极层。

公开(公告)号：US08703562B2

公开(公告)日：2014-04-22

申请号：US13426832

申请日：2012-03-22

申请人： Tzung-Han Lee ,  Chung-Lin Huang ,  Ron-Fu Chu

发明人： Tzung-Han Lee ,  Chung-Lin Huang ,  Ron-Fu Chu

IPC分类号： H01L21/8238

CPC分类号： H01L27/10894 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10885

摘要： A manufacturing method of a random access memory includes the following steps: providing a semiconductor structure having an array region and a peripheral region; forming a plurality of first trenches in the array region, and concurrently, a plurality of second trenches on the peripheral region; forming a polysilicon layer to cover the array region and the peripheral region, and the first and the second trenches are filled up with the polysilicon layer; planarizing the polysilicon layer so the remaining polysilicon layer only resides in the first and the second trenches; forming a conductive layer on the semiconductor structure; patterning the conductive layer to form a plurality of landing pads on the array region, and a plurality of bit line units on the peripheral region; and forming a plurality of capacitor units which is in electrical connection to the landing pads.

摘要翻译： 随机存取存储器的制造方法包括以下步骤：提供具有阵列区域和周边区域的半导体结构; 在阵列区域中形成多个第一沟槽，同时在周边区域上形成多个第二沟槽; 形成多晶硅层以覆盖阵列区域和外围区域，并且第一和第二沟槽被多晶硅层填充; 平坦化多晶硅层，使得剩余的多晶硅层仅驻留在第一和第二沟槽中; 在半导体结构上形成导电层; 图案化导电层以在阵列区域上形成多个着陆焊盘，以及在周边区域上形成多个位线单元; 以及形成与所述着陆焊盘电连接的多个电容器单元。

公开(公告)号：US5582679A

公开(公告)日：1996-12-10

申请号：US304684

申请日：1994-09-12

申请人： Liu Lianjun ,  Ron-Fu Chu

发明人： Liu Lianjun ,  Ron-Fu Chu

IPC分类号： C23F4/00 ,  H01L21/3213 ,  H01L21/336

CPC分类号： C23F4/00 ,  H01L21/32135

摘要： A method for dry etching metal films, specifically aluminum, is described. This process uses photoresist as a mask with a gas mixture of BCl3, Cl2 and N2 used for the RIE. The addition of specific amounts of N2 to the etching chemistry results in non-tapered or non-undercut aluminum shapes. These desired shapes are attributed to the creation of polymer on the sidewall of the aluminum during the etching procedure, thus protecting against the isotropic components of RIE process, which cause the tapering. This RIE process can also be conducted at high enough temperatures, needed to avoid deleterious microloading effects.

摘要翻译： 描述了用于干蚀刻金属膜，特别是铝的方法。 该方法使用光刻胶作为掩模，用于用于RIE的BCl3，Cl2和N2的气体混合物。 将特定量的N 2添加到蚀刻化学品中导致非锥形或非底切的铝形状。 这些期望的形状归因于在蚀刻过程期间在铝的侧壁上产生聚合物，从而防止RIE工艺的各向同性组分引起锥形化。 该RIE工艺也可以在足够高的温度下进行，以避免有害的微载荷效应。

公开(公告)号：US5496666A

公开(公告)日：1996-03-05

申请号：US329887

申请日：1994-10-27

申请人： Ron-Fu Chu ,  Chun H. Yik

发明人： Ron-Fu Chu ,  Chun H. Yik

IPC分类号： G03F1/00 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F7/70433

摘要： This invention provides an improved process latitude mask for forming contact or via hole openings in a photoresist masking layer in the fabrication of semiconductor integrated circuits. The invention also provides a method of forming contact or via hole openings in a photoresist masking layer using an improved process latitude mask. The improved process latitude mask, called a dot mask, uses an opaque blocking area formed in the center of the primary opening in a projection mask for forming contact or via hole openings in a photoresist layer. The opaque blocking area is equal to or less than the area of the primary opening divided by nine. The opaque blocking area is small enough so that it will not form an image in the photoresist layer. The opaque blocking area modifies the light intensity profile at the photoresist layer in a manner which improves process latitude.

摘要翻译： 本发明提供了一种用于在半导体集成电路的制造中在光致抗蚀剂掩模层中形成接触或通孔开口的改进的工艺纬度掩模。 本发明还提供了使用改进的工艺纬度掩模在光致抗蚀剂掩模层中形成接触孔或通孔开口的方法。 称为点阵掩模的改进的工艺纬度掩模使用在投影掩模中形成在主开口的中心的不透明阻挡区域，用于在光致抗蚀剂层中形成接触或通孔开口。 不透明阻挡区域等于或小于主开口面积除以9。 不透明阻挡区域足够小，使得其不会在光致抗蚀剂层中形成图像。 不透明阻挡区域以改善工艺纬度的方式改变光致抗蚀剂层处的光强度分布。

公开(公告)号：US06696227B2

公开(公告)日：2004-02-24

申请号：US10016893

申请日：2001-12-13

申请人： Chung-Wei Hsu ,  Ron-Fu Chu

发明人： Chung-Wei Hsu ,  Ron-Fu Chu

IPC分类号： G03F720

CPC分类号： G03F7/70466

摘要： The present invention provides a shift multi-exposure method for defining a regular pattern by a photomask. The method comprises the following steps. First, a photoresist layer comprising a first region and a second region is formed on a substrate. Then, a first pattern is defined on the first region by the photomask. Next, the photomask is moved a predetermined distance, and a second pattern is defined on the second region by the photomask. Finally, development is performed to display the first pattern and the second pattern on the photoresist layer.

摘要翻译： 本发明提供一种用于通过光掩模定义规则图案的偏移多曝光方法。 该方法包括以下步骤。 首先，在基板上形成包括第一区域和第二区域的光致抗蚀剂层。 然后，通过光掩模在第一区域上定义第一图案。 接下来，将光掩模移动预定距离，并且通过光掩模在第二区域上限定第二图案。 最后，进行显影以在光致抗蚀剂层上显示第一图案和第二图案。

公开(公告)号：US06451706B1

公开(公告)日：2002-09-17

申请号：US08657219

申请日：1996-06-03

申请人： Ron-Fu Chu ,  Yang Pan ,  Qun Ying Lin ,  Mei Sheng Zhou

发明人： Ron-Fu Chu ,  Yang Pan ,  Qun Ying Lin ,  Mei Sheng Zhou

IPC分类号： H01L21302

CPC分类号： H01L21/32137 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/32139

摘要： A new method of avoiding resist notching in the formation of a polysilicon gate electrode in the fabrication of an integrated circuit device is described. Bare active areas are provided surrounded by field oxide isolation on a semiconductor substrate wherein the surface of the substrate has an uneven topography due to the uneven interface between the active areas and the isolation. A polysilicon layer is deposited over the active areas and the field oxide isolation of the substrate. The surface of the polysilicon layer is roughened using a plasma etching process wherein pits are formed on the surface which act as light traps. The roughened polysilicon layer is covered with a layer of photoresist. Portions of the photoresist layer are exposed to actinic light wherein reflection lights from the actinic light are trapped in the pits. The reflection lights do not reflect onto the unexposed portion of the photoresist layer. The photoresist layer is developed and patterned to form the desired photoresist mask for the polysilicon layer wherein the absence of reflection lights reflecting onto the unexposed portion of the photoresist results in the notch-free photoresist mask in the formation of a polysilicon gate electrode in the fabrication of an integrated circuit device.

摘要翻译： 描述了在集成电路器件的制造中避免形成多晶硅栅电极时的抗蚀刻缺口的新方法。 在半导体衬底上围绕场氧化物隔离提供裸露的有源区域，其中由于有源区域与隔离之间的不平坦界面，衬底的表面具有不平坦的形貌。 多晶硅层沉积在有源区和衬底的场氧化物隔离之上。 使用等离子体蚀刻工艺将多晶硅层的表面粗糙化，其中在作为光阱的表面上形成有凹坑。 粗糙多晶硅层被一层光致抗蚀剂覆盖。 光致抗蚀剂层的一部分暴露于光化光，其中来自光化光的反射光被捕获在凹坑中。 反射光不会反射到光致抗蚀剂层的未曝光部分上。 光致抗蚀剂层被显影和图案化以形成用于多晶硅层的期望的光致抗蚀剂掩模，其中反射到光致抗蚀剂的未曝光部分上的反射光的不存在导致在制造中形成多晶硅栅电极的无切口光致抗蚀剂掩模 的集成电路装置。

公开(公告)号：US6139251A

公开(公告)日：2000-10-31

申请号：US236359

申请日：1999-01-25

申请人： Ron-Fu Chu

发明人： Ron-Fu Chu

IPC分类号： H01L21/68 ,  H01L21/683 ,  B65G47/24

CPC分类号： H01L21/682 ,  H01L21/6838 ,  Y10S414/136

摘要： A stepper alignment method and apparatus for transferring circuit layout on a mask to a wafer precisely includes a stepper located in a susceptor and includes a vacuum chuck and a movable vacuum chuck. The wafer has two notches on its perimeter. The vacuum chuck has two sets of photo sensors mating against the notches and a central circular opening for housing the movable vacuum chuck therein. The movable vacuum chuck holds the wafer by means of vacuum force and is able to rotate and move linearly to align the notches of the wafer against the photo sensors accurately at high speed.

摘要翻译： 用于将掩模上的电路布局传送到晶片的步进对准方法和装置精确地包括位于基座中的步进器，并且包括真空卡盘和可动真空卡盘。 晶圆在其周边有两个凹口。 真空吸盘具有与凹口配合的两组光传感器和用于将可动真空吸盘容纳在其中的中心圆形开口。 可移动的真空吸盘通过真空力保持晶片，并且能够线性地旋转和移动，以使晶片的凹口以高速精确地对准光敏传感器。

公开(公告)号：US5795699A

公开(公告)日：1998-08-18

申请号：US679858

申请日：1996-07-15

申请人： Mei Sheng Zhou ,  Ron-Fu Chu

发明人： Mei Sheng Zhou ,  Ron-Fu Chu

IPC分类号： G03F7/09 ,  G03F7/16 ,  G03C5/00

CPC分类号： G03F7/091 ,  G03F7/165 ,  Y10S438/939

摘要： A method for forming upon a reflective layer, such as a reflective conducting layer, within an integrated circuit an Anti-Reflective Coating (ARC) which simultaneously possesses adhesion promotion characteristics for an organic layer to be formed upon the reflective layer. There is first formed upon a semiconductor wafer a reflective integrated circuit layer which may be a hydrophilic reflective integrated circuit layer or a hydrophobic integrated circuit layer. The semiconductor wafer is then immersed into and withdrawn from a Langmuir trough having formed therein a Langmuir-Blodgett (LB) monolayer film of a dye surfactant molecule ordered upon a surface of water. Upon withdrawing the wafer from the Langmuir trough, there is formed upon the reflective integrated circuit layer an ordered LB film of the dye surfactant molecule. The chromophore groups within the dye surfactant molecule and ordered LB film provide ARC characteristics to the reflective layer.

摘要翻译： 一种用于在集成电路内的反射层（例如反射导电层）上形成抗反射涂层（ARC）的方法，该抗反射涂层同时具有将在反射层上形成的有机层的粘附促进特性。 首先在半导体晶片上形成反射集成电路层，反射集成电路层可以是亲水反射集成电路层或疏水性集成电路层。 然后将半导体晶片浸入Langmuir槽中并从Langmuir槽中取出，Langmuir槽中形成了在水表面上排列的染料表面活性剂分子的Langmuir-Blodgett（LB）单层膜。 当从Langmuir槽中取出晶片时，在反射集成电路层上形成染料表面活性剂分子的有序LB膜。 染料表面活性剂分子内的发色团和有序的LB膜为反射层提供ARC特性。

公开(公告)号：US06551520B1

公开(公告)日：2003-04-22

申请号：US09589080

申请日：2000-06-08

申请人： Ron-Fu Chu

发明人： Ron-Fu Chu

IPC分类号： C23F100

CPC分类号： H01J37/32834 ,  H01J37/3244 ,  Y10T279/23

摘要： In a method for exhausting processing gases out of a dry etching apparatus, processing gases are introduced into a processing chamber of the dry etching apparatus and converted into a gas plasma to etch a semiconductor workpiece. After plasma etching the semiconductor workpiece, the gas plasma is centrally gathered under the semiconductor workpiece by a sucking force formed surrounding the bottom periphery of the semiconductor workpiece, and then, is exhausted. The semiconductor workpiece to be processed is placed on a chuck under which an exhausting means is arranged.

摘要翻译： 在从干蚀刻装置排出处理气体的方法中，将处理气体引入到干蚀刻装置的处理室中，并转换成气体等离子体以蚀刻半导体工件。 在等离子体蚀刻半导体工件之后，通过围绕半导体工件的底部周边形成的吸力将气体等离子体集中聚集在半导体工件的下方，然后被排出。 待加工的半导体工件被放置在卡盘上，在该卡盘上布置排气装置。

公开(公告)号：US5863307A

公开(公告)日：1999-01-26

申请号：US80804

申请日：1998-05-18

申请人： Mei Sheng Zhou ,  Ron-Fu Chu

发明人： Mei Sheng Zhou ,  Ron-Fu Chu

IPC分类号： C09K3/14 ,  H01L21/321 ,  H01L21/768 ,  B24D3/34

CPC分类号： H01L21/7684 ,  C09K3/1472 ,  H01L21/3212

摘要： A Chemical-Mechanical Polish (CMP) planarizing method and a Chemical-Mechanical Polish (CMP) slurry composition for Chemical-Mechanical Polish (CMP) planarizing of copper metal and copper metal alloy layers within integrated circuits. There is first provided a semiconductor substrate having formed upon its surface a patterned substrate layer. Formed within and upon the patterned substrate layer is a blanket copper metal layer or a blanket copper metal alloy layer. The blanket copper metal layer or blanket copper metal alloy layer is then planarized through a Chemical-Mechanical Polish (CMP) planarizing method employing a Chemical-Mechanical Polish (CMP) slurry composition. The Chemical-Mechanical Polish (CMP) slurry composition comprises a non-aqueous coordinating solvent and a halogen radical producing specie.

摘要翻译： 化学机械抛光（CMP）平面化方法和化学机械抛光（CMP）浆料组合物用于集成电路中铜金属和铜金属合金层的化学机械抛光（CMP）平面化。 首先提供了在其表面上形成图案化衬底层的半导体衬底。 形成在图案化衬底层的内部和之上的是铜层金属层或覆盖铜金属合金层。 然后通过使用化学机械抛光（CMP）浆料组合物的化学机械抛光（CMP）平面化方法将橡皮布铜金属层或橡皮布铜金属合金层平坦化。 化学机械抛光（CMP）浆料组合物包含非水配位溶剂和卤素原子产生物。