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公开(公告)号：US10203596B2
公开(公告)日：2019-02-12
申请号：US14989765
申请日：2016-01-06
发明人： En-Chiuan Liou , Che-Yi Lin
摘要： A method of filtering overlay data by field is provided in the present invention. The method includes the following steps. A minimum number of measure points per field on a semiconductor substrate is decided. Field data filtering rules are set. Overlay raw data is inputted. A raw data filtration is performed to the overlay raw data by field according to the field data filtering rules. Modified exposure parameters are generated for each field according to overlay data of remaining measure points per field after the raw data filtration when the number of the remaining measure points per field is larger than or equal to the minimum number of the measure points per field. Accordingly, the modified exposure parameters will be more effective in reducing the overlay error because more outliers may be filtered out before generating the modified exposure parameters.
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公开(公告)号：US20170193153A1
公开(公告)日：2017-07-06
申请号：US14989765
申请日：2016-01-06
发明人： En-Chiuan Liou , Che-Yi Lin
CPC分类号： G03F1/36 , G03F7/70633
摘要： A method of filtering overlay data by field is provided in the present invention. The method includes the following steps. A minimum number of measure points per field on a semiconductor substrate is decided. Field data filtering rules are set. Overlay raw data is inputted. A raw data filtration is performed to the overlay raw data by field according to the field data filtering rules. Modified exposure parameters are generated for each field according to overlay data of remaining measure points per field after the raw data filtration when the number of the remaining measure points per field is larger than or equal to the minimum number of the measure points per field. Accordingly, the modified exposure parameters will be more effective in reducing the overlay error because more outliers may be filtered out before generating the modified exposure parameters.
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公开(公告)号：US09653345B1
公开(公告)日：2017-05-16
申请号：US14989802
申请日：2016-01-07
发明人： Shang-Nan Chou , Che-Yi Lin , En-Chiuan Liou , Yu-Ting Hung , Shin-Feng Su , Chia-Hsun Tseng
IPC分类号： H01L21/76 , H01L21/768 , H01L21/027 , H01L21/308
CPC分类号： H01L21/76802 , H01L21/0276 , H01L21/308 , H01L21/3081 , H01L21/31144 , H01L21/76811 , H01L21/76816 , H01L21/76832
摘要： A method of fabricating a semiconductor structure for improving critical dimension control is provided in the present invention. The method includes the following steps. An inter metal dielectric (IMD) layer is formed on a semiconductor substrate, a patterned hard mask layer is formed on the IMD layer, and a first aperture is formed in the IMD layer. A first barrier layer is formed on the patterned hard mask layer and a surface of the first aperture, a first patterned resist is formed on the first barrier layer, and an etching process is performed to form a second aperture in the IMD layer by using the first patterned resist as a mask. The first patterned resist is kept from being poisoned because of the first barrier layer, and the critical dimension control of the semiconductor structure may be improved accordingly.
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公开(公告)号：US20170115579A1
公开(公告)日：2017-04-27
申请号：US15260322
申请日：2016-09-09
发明人： Che-Yi Lin , En-Chiuan Liou , Yi-Jing Wang , Chia-Hsun Tseng
IPC分类号： G03F7/20
CPC分类号： G03F7/70633 , H01L21/02642 , H01L21/027 , H01L21/266 , H01L21/308 , H01L21/3081 , H01L21/3085 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139
摘要： An overlay mask includes a plurality of first patterns, a plurality of second patterns and a plurality of third patterns. The first patterns are arranged within a first pitch. The second patterns are arranged within a second pitch. A first portion of the third patterns are arranged alternately with the first patterns, within the first pitch, and a second portion of the third patterns are arranged alternately with the second patterns, within the second pitch, and the first pitch is not equal to the second pitch.
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公开(公告)号：US09964866B2
公开(公告)日：2018-05-08
申请号：US15065872
申请日：2016-03-10
发明人： Che-Yi Lin , En-Chiuan Liou , Chia-Hsun Tseng , Yi-Ting Chen , Chia-Hung Wang , Yi-Jing Wang
CPC分类号： G03F9/7003
摘要： A method of forming an integrated circuit includes the following steps. A substrate including a plurality of exposure fields is provided, and each of the exposure field includes a target portion and a set of alignment marks. Measure the set of alignment marks of each exposure field by a measuring system to obtain alignment data for the respective exposure field. Determine an exposure parameter corresponding to each exposure field and an exposure location on the target portion from the alignment data for the respective exposure field by a calculating system. Feedback the alignment data to a next substrate.
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公开(公告)号：US20170220728A1
公开(公告)日：2017-08-03
申请号：US15065872
申请日：2016-03-10
发明人： Che-Yi Lin , En-Chiuan Liou , Chia-Hsun Tseng , Yi-Ting Chen , Chia-Hung Wang , Yi-Jing Wang
CPC分类号： G03F9/7003
摘要： A method of forming an integrated circuit includes the following steps. A substrate including a plurality of exposure fields is provided, and each of the exposure field includes a target portion and a set of alignment marks. Measure the set of alignment marks of each exposure field by a measuring system to obtain alignment data for the respective exposure field. Determine an exposure parameter corresponding to each exposure field and an exposure location on the target portion from the alignment data for the respective exposure field by a calculating system. Feedback the alignment data to a next substrate.
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公开(公告)号：US09746786B2
公开(公告)日：2017-08-29
申请号：US15260322
申请日：2016-09-09
发明人： Che-Yi Lin , En-Chiuan Liou , Yi-Jing Wang , Chia-Hsun Tseng
CPC分类号： G03F7/70633 , H01L21/02642 , H01L21/027 , H01L21/266 , H01L21/308 , H01L21/3081 , H01L21/3085 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139
摘要： An overlay mask includes a plurality of first patterns, a plurality of second patterns and a plurality of third patterns. The first patterns are arranged within a first pitch. The second patterns are arranged within a second pitch. A first portion of the third patterns are arranged alternately with the first patterns, within the first pitch, and a second portion of the third patterns are arranged alternately with the second patterns, within the second pitch, and the first pitch is not equal to the second pitch.
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公开(公告)号：US09470987B1
公开(公告)日：2016-10-18
申请号：US14920859
申请日：2015-10-22
发明人： Che-Yi Lin , En-Chiuan Liou , Yi-Jing Wang , Chia-Hsun Tseng
IPC分类号： G03F7/00 , H01L21/30 , H01L21/02 , H01L21/32 , H01L21/26 , H01L21/31 , G03F7/20 , H01L21/266 , H01L21/308 , H01L21/311 , H01L21/3213 , H01L21/027
CPC分类号： G03F7/70633 , H01L21/02642 , H01L21/027 , H01L21/266 , H01L21/308 , H01L21/3081 , H01L21/3085 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139
摘要： An overlay mask includes a plurality of first patterns, a plurality of second patterns and a plurality of third patterns. The first patterns are arranged within a first pitch. The second patterns are arranged within a second pitch. A first portion of the third patterns are arranged alternately with the first patterns, within the first pitch, and a second portion of the third patterns are arranged alternately with the second patterns, within the second pitch, and the first pitch is not equal to the second pitch.
摘要翻译： 覆盖掩模包括多个第一图案，多个第二图案和多个第三图案。 第一图案布置在第一间距之内。 第二图案布置在第二间距内。 第三图案的第一部分在第一间距内与第一图案交替布置，并且第三图案的第二部分在第二间距内与第二图案交替布置，并且第一间距不等于 第二音调
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