-
公开(公告)号：US10373915B1
公开(公告)日：2019-08-06
申请号：US16202104
申请日：2018-11-28
发明人： Hsiao-Lin Hsu , En-Chiuan Liou , Yi-Ting Chen , Sho-Shen Lee
IPC分类号： H01L23/544 , H01L21/66 , G01B11/27 , H01L21/8234
摘要： A measurement make includes four rectangular regions having a first region and a second region arranged diagonally, and a third region and a fourth region arranged diagonally. A plurality sets of first inner pattern blocks, first middle pattern blocks, and first outer reference pattern blocks, are disposed within the first region. Each first inner pattern block comprises line patterns and a block pattern. The block pattern has multiple space patterns arranged therein. The first inner pattern block is rotational symmetrical to the first middle pattern block.
-
2.发明申请公开(公告)号：US20150293461A1
公开(公告)日：2015-10-15
申请号：US14279039
申请日：2014-05-15
发明人： En-Chiuan Liou , Chia-Chang Hsu , Yi-Ting Chen , Teng-Chin Kuo , Chun-Chi Yu
IPC分类号： G03F7/20
CPC分类号： G03F7/70516
摘要： An overlap mark set is provided to have at least a first and a second overlap marks both of which are located at the same pattern layer. The first overlap mark includes at least two sets of X-directional linear patterns, having a preset offset a1 therebetween; and at least two sets of Y-directional linear patterns, having the preset offset a1 therebetween. The second overlap mark includes at least two sets of X-directional linear patterns, having a preset offset b1 therebetween; and at least two sets of Y-directional linear patterns, having the preset offset b1 therebetween. The preset offsets a1 and b1 are not equal.
摘要翻译： 提供重叠标记集以具有两个位于相同图案层的至少第一和第二重叠标记。 第一重叠标记包括至少两组X方向线性图案，其间具有预置偏移量a1; 以及至少两组Y方向线性图案，其间具有预设偏移量a1。 第二重叠标记包括至少两组X方向线性图案，其间具有预设偏移量b1; 以及至少两组Y方向线性图案，其间具有预设偏移量b1。 预置偏移量a1和b1不相等。
-
公开(公告)号：US10707213B2
公开(公告)日：2020-07-07
申请号：US16178521
申请日：2018-11-01
发明人： Chia-Hung Wang , En-Chiuan Liou , Chien-Hao Chen , Sho-Shen Lee , Yi-Ting Chen , Jhao-Hao Lee
IPC分类号： H01L21/311 , H01L27/108 , H01L21/027 , H01L21/033
摘要： A method of forming a layout of a semiconductor device includes the following steps. First line patterns extend along a first direction in a first area and a second area, but the first line patterns extend along a second direction in a boundary area. Second line patterns extend along a third direction in the first area and the second area, but the second line patterns extend along a fourth direction in the boundary area, so that minimum distances between overlapping areas of the first line patterns and the second line patterns in the boundary area are larger than minimum distances between overlapping areas of the first line patterns and the second line patterns in the first area and the second area. A trimming process is performed to shade the first line patterns and the second line patterns in the boundary area and the second area.
-
4.发明授权公开(公告)号：US09482964B2
公开(公告)日：2016-11-01
申请号：US14279039
申请日：2014-05-15
发明人： En-Chiuan Liou , Chia-Chang Hsu , Yi-Ting Chen , Teng-Chin Kuo , Chun-Chi Yu
IPC分类号： G03F7/20
CPC分类号： G03F7/70516
摘要： An overlap mark set is provided to have at least a first and a second overlap marks both of which are located at the same pattern layer. The first overlap mark includes at least two sets of X-directional linear patterns, having a preset offset a1 therebetween; and at least two sets of Y-directional linear patterns, having the preset offset a1 therebetween. The second overlap mark includes at least two sets of X-directional linear patterns, having a preset offset b1 therebetween; and at least two sets of Y-directional linear patterns, having the preset offset b1 therebetween. The preset offsets a1 and b1 are not equal.
摘要翻译： 提供重叠标记集以具有两个位于相同图案层的至少第一和第二重叠标记。 第一重叠标记包括至少两组X方向线性图案，其间具有预置偏移量a1; 以及至少两组Y方向线性图案，其间具有预设偏移量a1。 第二重叠标记包括至少两组X方向线性图案，其间具有预设偏移量b1; 以及至少两组Y方向线性图案，其间具有预设的偏移量b1。 预置偏移量a1和b1不相等。
-
公开(公告)号：US09305884B1
公开(公告)日：2016-04-05
申请号：US14498217
申请日：2014-09-26
发明人： En-Chiuan Liou , Teng-Chin Kuo , Yi-Ting Chen
IPC分类号： H01L23/544 , H01L23/532 , H01L21/027 , H01L21/311 , H01L21/033 , H01L21/66
CPC分类号： H01L23/544 , G03F7/70633 , H01L22/12 , H01L22/20 , H01L23/53271 , H01L2223/54426 , H01L2924/0002 , H01L2924/00
摘要： An overlay mark applied to a LELE-type double patterning lithography (DPL) process including a first lithography step, a first etching step, a second lithography step and a second etching step in sequence is described. The overlay mark includes a first x-directional pattern and a first y-directional pattern of a previous layer, second x-directional and y-directional patterns of a current layer defined by the first lithography step, and third x-directional and y-directional patterns of the current layer defined by the second lithography step. The second x-directional patterns and the third x-directional patterns are arranged alternately beside the first x-directional pattern. The second y-directional patterns and the third y-directional patterns are arranged alternately beside the first y-directional pattern.
摘要翻译： 描述了应用于包括第一光刻步骤，第一蚀刻步骤，第二光刻步骤和第二蚀刻步骤的LELE型双重图案化光刻（DPL）工艺的覆盖标记。 覆盖标记包括由第一光刻步骤限定的当前层的先前层，第二x方向和y方向图案的第一x方向图案和第一y方向图案，以及第三x方向和y方向图案， 由第二光刻步骤限定的当前层的方向图案。 第二x方向图案和第三x方向图案交替排列在第一x方向图案旁边。 第二y方向图案和第三y方向图案交替排列在第一y方向图案旁边。
-
公开(公告)号：US20200111791A1
公开(公告)日：2020-04-09
申请号：US16178521
申请日：2018-11-01
发明人： Chia-Hung Wang , En-Chiuan Liou , Chien-Hao Chen , Sho-Shen Lee , Yi-Ting Chen , Jhao-Hao Lee
IPC分类号： H01L27/108 , H01L21/033 , H01L21/027 , H01L21/311
摘要： A method of forming a layout of a semiconductor device includes the following steps. First line patterns extend along a first direction in a first area and a second area, but the first line patterns extend along a second direction in a boundary area. Second line patterns extend along a third direction in the first area and the second area, but the second line patterns extend along a fourth direction in the boundary area, so that minimum distances between overlapping areas of the first line patterns and the second line patterns in the boundary area are larger than minimum distances between overlapping areas of the first line patterns and the second line patterns in the first area and the second area. A trimming process is performed to shade the first line patterns and the second line patterns in the boundary area and the second area.
-
公开(公告)号：US20200013724A1
公开(公告)日：2020-01-09
申请号：US16049826
申请日：2018-07-31
发明人： Zheng-Feng Chen , Sho-Shen Lee , En-Chiuan Liou , Hsiao-Lin Hsu , Yi-Ting Chen , Lu-Wei Kuo
IPC分类号： H01L23/544 , H01L27/108 , H01L21/027 , H01L21/311 , H01L21/3213
摘要： A method of forming an overlay mark structure includes the following steps. An insulation layer is formed on a substrate. A first overlay mark is formed in the insulation layer. A metal layer is formed on the substrate. The metal layer covers the insulation layer and the first overlay mark. The metal layer on the first overlay mark is removed. A top surface of the first overlay mark is lower than a top surface of the insulation layer after the step of removing the metal layer on the first overlay mark. A second overlay mark is formed on the metal layer. In the method of forming the overlay mark structure, the first overlay mark may not be covered by the metal layer for avoiding influences on related measurements, and the second overlay mark may be formed on the metal layer for avoiding related defects generated by the height difference.
-
公开(公告)号：US10177094B1
公开(公告)日：2019-01-08
申请号：US15954591
申请日：2018-04-16
发明人： Hsiao-Lin Hsu , En-Chiuan Liou , Yi-Ting Chen , Sho-Shen Lee
IPC分类号： H01L23/544 , G01B11/27 , H01L21/66 , H01L21/8234
摘要： A measurement make includes four rectangular regions having a first region and a second region arranged diagonally, and a third region and a fourth region arranged diagonally. A plurality sets of first inner pattern blocks, first middle pattern blocks, and first outer reference pattern blocks, are disposed within the first region. Each first inner pattern block comprises line patterns and a block pattern. The block pattern has multiple space patterns arranged therein. The first inner pattern block is rotational symmetrical to the first middle pattern block.
-
公开(公告)号：US20160306274A1
公开(公告)日：2016-10-20
申请号：US14685615
申请日：2015-04-14
发明人： En-Chiuan Liou , Chia-Hsun Tseng , Tuan-Yen Yu , Po-Tsang Chen , Yi-Ting Chen
IPC分类号： G03F1/76 , H01L21/033
摘要： A manufacturing method of a pattern transfer mask includes the following steps. A basic mask is provided. The basic mask includes a plurality of patterns formed by a patterned absorber layer on a substrate according to a first writing layout. A photolithographic process is then performed by the basic mask to obtain individual depth of focus (iDoF) ranges of each of the patterns and a usable depth of focus (UDoF) range of the patterns. At least one constrain pattern dominating the UDoF range is selected from the patterns in the basic mask. The rest of the patterns except the constrain pattern are non-dominating patterns. A second writing layout is then generated for reducing a thickness of the patterned absorber layer in the constrain pattern or in the non-dominating patterns.
摘要翻译： 图案转印掩模的制造方法包括以下步骤。 提供基本的面具。 基本掩模包括根据第一写入布局在基板上由图案化的吸收层形成的多个图案。 然后通过基本掩模执行光刻处理，以获得每种图案的单独焦点深度（iDoF）范围和图案的可用深度（UDoF）范围。 从基本掩码中的图案中选择至少一个主导UDoF范围的约束图案。 除了约束模式之外的其余模式是非主导模式。 然后生成第二写入布局以减小约束图案中的图案化吸收层的厚度或以非主导图案的方式。
-
公开(公告)号：US10529667B1
公开(公告)日：2020-01-07
申请号：US16049826
申请日：2018-07-31
发明人： Zheng-Feng Chen , Sho-Shen Lee , En-Chiuan Liou , Hsiao-Lin Hsu , Yi-Ting Chen , Lu-Wei Kuo
IPC分类号： H01L23/544 , H01L27/108 , H01L21/027 , H01L21/3213 , H01L21/311
摘要： A method of forming an overlay mark structure includes the following steps. An insulation layer is formed on a substrate. A first overlay mark is formed in the insulation layer. A metal layer is formed on the substrate. The metal layer covers the insulation layer and the first overlay mark. The metal layer on the first overlay mark is removed. A top surface of the first overlay mark is lower than a top surface of the insulation layer after the step of removing the metal layer on the first overlay mark. A second overlay mark is formed on the metal layer. In the method of forming the overlay mark structure, the first overlay mark may not be covered by the metal layer for avoiding influences on related measurements, and the second overlay mark may be formed on the metal layer for avoiding related defects generated by the height difference.
-
-
-
-
-
-
-
-
-
搜索结果
15 条记录 (耗时 0.017 秒)
