公开(公告)号：US09923162B2

公开(公告)日：2018-03-20

申请号：US14766722

申请日：2014-02-13

申请人： University of Florida Research Foundation, Inc.

发明人： Franky So ,  Wonhoe Koo

IPC分类号： H01L51/52 ,  H01L51/00 ,  H01L51/50 ,  H01L51/56

CPC分类号： H01L51/5209 ,  H01L51/0096 ,  H01L51/5012 ,  H01L51/5056 ,  H01L51/5215 ,  H01L51/5221 ,  H01L51/5225 ,  H01L51/5275 ,  H01L51/56

摘要： A layered organic light emitting diode (OLED) device comprises a buckled structure over a portion of the light emitting face to provide improved light output relative to flat OLED devices. The buckled structure has a fine buckling and a gross buckling, which are quasi-periodic. Embodiments of the invention are directed to a method of producing the OLED device comprising a buckled structure, where a transparent substrate coated with a transparent elastomeric layer has a thin metal layer deposited on a portion of the elastomeric layer at an elevated temperature. Upon cooling the metal layer buckles with the formation of the quasi-periodic buckling. Subsequently the metal layer is oxidized to a metal oxide layer that retains the buckling. An OLED with a buckling structure over a portion of the emitting face is constructed on the metal oxide layer and retains the buckling of the metal oxide layer.

公开(公告)号：US09006752B2

公开(公告)日：2015-04-14

申请号：US14176572

申请日：2014-02-10

申请人： University of Florida Research Foundation, Inc.

发明人： Franky So ,  Do Young Kim

IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00 ,  G01J5/20 ,  H01L27/28

CPC分类号： G01J5/20 ,  B82Y10/00 ,  H01L27/288 ,  H01L27/32 ,  H01L31/101 ,  H01L31/14 ,  H01L33/0045 ,  H01L51/0046 ,  H01L51/0059 ,  H01L51/0078 ,  H01L51/008 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/50 ,  H01L51/52 ,  H01L51/5278 ,  H01L2251/308 ,  Y10S977/954

摘要： Embodiments of the invention pertain to a method and apparatus for sensing infrared (IR) radiation. In a specific embodiment, a night vision device can be fabricated by depositing a few layers of organic thin films. Embodiments of the subject device can operate at voltages in the range of 10-15 Volts and have lower manufacturing costs compared to conventional night vision devices. Embodiments of the device can incorporate an organic phototransistor in series with an organic light emitting device. In a specific embodiment, all electrodes are transparent to infrared light. An IR sensing layer can be incorporated with an OLED to provide IR-to-visible color up-conversion. Improved dark current characteristics can be achieved by incorporating a poor hole transport layer material as part of the IR sensing layer.

摘要翻译： 本发明的实施例涉及用于感测红外（IR）辐射的方法和装置。 在具体实施例中，可以通过沉积几层有机薄膜来制造夜视装置。 本装置的实施例可以在10-15伏的范围内工作，并且与传统的夜视装置相比具有较低的制造成本。 该器件的实施例可以结合有机光电晶体管与有机发光器件串联。 在具体实施例中，所有电极对于红外光是透明的。 IR感测层可以与OLED结合以提供IR到可见的上色转换。 通过掺入不良的空穴传输层材料作为IR感测层的一部分，可以实现改进的暗电流特性。

公开(公告)号：US20170117335A1

公开(公告)日：2017-04-27

申请号：US15397656

申请日：2017-01-03

申请人： University of Florida Research Foundation, Inc. ,  Nanoholdings, LLC

发明人： Franky So ,  Do Young Kim ,  Jae Woong Lee ,  Bhabendra K. Pradhan

IPC分类号： H01L27/32 ,  H01L27/28

CPC分类号： H01L27/3227 ,  H01L27/288 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022491 ,  H01L31/035218 ,  H01L31/09 ,  H01L31/143 ,  H01L31/1804 ,  H01L31/1808 ,  H01L31/184 ,  H01L51/0047 ,  H01L51/0059 ,  H01L51/0078 ,  H01L51/0084 ,  H01L51/4213 ,  H01L51/422 ,  H01L51/442 ,  H01L51/5048 ,  H01L51/56 ,  H01L2031/0344 ,  H04N5/33 ,  Y02E10/549

摘要： Photodetectors, methods of fabricating the same, and methods using the same to detect radiation are described. A photodetector can include a first electrode, a light sensitizing layer, an electron blocking/tunnelling layer, and a second electrode. Infrared-to-visible upconversion devices, methods of fabricating the same, and methods using the same to detect radiation are also described. An Infrared-to-visible upconversion device can include a photodetector and an OLDE coupled to the photodetector.

公开(公告)号：US09276048B2

公开(公告)日：2016-03-01

申请号：US13850969

申请日：2013-03-26

申请人： UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

发明人： Franky So

IPC分类号： H01J49/00 ,  H01L27/32 ,  H01L27/28 ,  H01L27/30 ,  H01L51/42 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L27/3227 ,  H01L27/288 ,  H01L27/307 ,  H01L51/0053 ,  H01L51/0081 ,  H01L51/0504 ,  H01L51/4213 ,  H01L51/428 ,  Y02E10/52 ,  Y02E10/549 ,  Y02P70/521

摘要： Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device.

公开(公告)号：US20150372046A1

公开(公告)日：2015-12-24

申请号：US14763394

申请日：2014-01-23

申请人： University of Florida Research Foundation, Inc.

发明人： Do Young Kim ,  Franky So ,  Jae Woong Lee

IPC分类号： H01L27/146 ,  H01L27/28

CPC分类号： H01L27/14649 ,  H01L27/14694 ,  H01L27/283 ,  H01L27/307

摘要： An image sensor is constructed on a substrate that is a read-out transistor array with a multilayer array of infrared photodetectors formed thereon. The infrared photodetectors include a multiplicity of layers including an infrared transparent electrode distal to the substrate, a counter electrode directly contacting the substrate, and an infrared sensitizing layer that comprises a multiplicity of nanoparticles. The layers can be inorganic or organic materials. In addition to the electrodes and sensitizing layers, the multilayer stack can include a hole-blocking layer, an electron-blocking layer, and an anti-reflective layer. The infrared sensitizing layer can be PbS or PbSe quantum dots.

摘要翻译： 图像传感器构成在其上形成有红外光电检测器的多层阵列的读出晶体管阵列的基板上。 红外光电探测器包括多个层，包括远离衬底的红外透明电极，直接接触衬底的对电极和包含多个纳米颗粒的红外线敏化层。 这些层可以是无机或有机材料。 除了电极和敏化层之外，多层堆叠可以包括空穴阻挡层，电子阻挡层和抗反射层。 红外线增感层可以是PbS或PbSe量子点。

公开(公告)号：US20150287871A1

公开(公告)日：2015-10-08

申请号：US14440510

申请日：2013-11-05

申请人： UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

发明人： Jesse Robert Manders ,  Do Young Kim ,  Jiho Ryu ,  Jae Woong Lee ,  Franky So

IPC分类号： H01L31/101 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/032 ,  H01L31/0296

CPC分类号： H01L31/1016 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/035218 ,  H01L31/109 ,  H01L31/18 ,  H01L31/1828

摘要： An ultraviolet light detector has a pn-junction of wide-gap semiconductors layers, where a p-type semiconductor layer with a polycrystalline metal oxide contacts an n-type semiconductor layer of metal oxide nanoparticles, or the converse. The ultraviolet detector is prepared using solvent based deposition methods and where temperatures can be maintained below 300° C.

摘要翻译： 紫外光检测器具有宽间隙半导体层的pn结，其中具有多晶金属氧化物的p型半导体层与金属氧化物纳米颗粒的n型半导体层接触或相反。 使用溶剂型沉积方法制备紫外检测器，并将温度保持在300℃以下。

公开(公告)号：US20150171149A1

公开(公告)日：2015-06-18

申请号：US14568794

申请日：2014-12-12

申请人： University of Florida Research Foundation, Inc. ,  Nanoholdings, LLC

发明人： Franky So ,  Do Young Kim ,  Bhabendra K. Pradhan

IPC分类号： H01L27/32 ,  G02B23/12 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0304

CPC分类号： H01L27/3234 ,  G02B23/12 ,  H01L27/288 ,  H01L27/305 ,  H01L27/3227 ,  H01L31/02322 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/035218 ,  H01L31/101 ,  H01L51/0053 ,  H01L51/4246 ,  H01L51/4293 ,  H01L2251/308 ,  Y02E10/549

摘要： Embodiments of the invention are directed to IR photodetectors with gain resulting from the positioning of a charge multiplication layer (CML) between the cathode and the IR sensitizing layer of the photodetector, where accumulating charge at the CML reduces the energy difference between the cathode and the CML to promote injection of electrons that result in gain for an electron only device. Other embodiments of the invention are directed to inclusion of the IR photodetectors with gain into an IR-to-visible up-conversion device that can be used in night vision and other applications.

摘要翻译： 本发明的实施例涉及具有由光电检测器的阴极和IR感光层之间的电荷倍增层（CML）的定位产生的增益的红外光电检测器，其中在CML处累积电荷降低了阴极和 CML促进注入电子，导致仅电子器件的增益。 本发明的其它实施例涉及将红外光电检测器的增益包括在可用于夜视和其他应用的IR到可见的上转换装置中。

公开(公告)号：US20140353502A1

公开(公告)日：2014-12-04

申请号：US14463546

申请日：2014-08-19

申请人： University of Florida Research Foundation, Inc. ,  Nanoholdings, LLC

发明人： Franky So ,  Do Young Kim ,  Bhabendra K. Pradhan

IPC分类号： H01L27/32 ,  H01L31/0352 ,  H01L31/032

CPC分类号： H01L27/3234 ,  G02B23/12 ,  H01L27/288 ,  H01L27/305 ,  H01L27/3227 ,  H01L31/02322 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/035218 ,  H01L31/101 ,  H01L51/0053 ,  H01L51/4246 ,  H01L51/4293 ,  H01L2251/308 ,  Y02E10/549

摘要： Embodiments of the invention are directed to IR photodetectors with gain resulting from the positioning of a charge multiplication layer (CML) between the cathode and the IR sensitizing layer of the photodetector, where accumulating charge at the CML reduces the energy difference between the cathode and the CML to promote injection of electrons that result in gain for an electron only device. Other embodiments of the invention are directed to inclusion of the IR photodetectors with gain into an IR-to-visible up-conversion device that can be used in night vision and other applications.

公开(公告)号：US09997571B2

公开(公告)日：2018-06-12

申请号：US14247130

申请日：2014-04-07

申请人： University of Florida Research Foundation, Inc. ,  Nanoholdings, LLC

发明人： Franky So ,  Do Young Kim ,  Dong Woo Song ,  Galileo Sarasqueta ,  Bhabendra K. Pradhan ,  Jae Woong Lee

IPC分类号： G01J5/20 ,  H01L27/28 ,  H01L31/0232 ,  H01L31/102 ,  H01L27/32 ,  H01L31/0296 ,  H01L51/00 ,  H01L51/50 ,  H01L51/42

CPC分类号： H01L27/288 ,  H01L27/3227 ,  H01L31/02322 ,  H01L31/0296 ,  H01L31/102 ,  H01L51/0047 ,  H01L51/0078 ,  H01L51/4273 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5092 ,  H01L51/5096 ,  Y02E10/549

摘要： Embodiments of the invention are directed to an improved device for sensing infrared (IR) radiation with up-conversion to provide an output of electromagnetic radiation having a shorter wavelength than the incident IR radiation, such as visible light. The device comprises an anode, a hole blocking layer to separate an IR sensing layer from the anode, an organic light emitting layer that is separated from the anode by the IR sensing layer, and a cathode. The hole blocking layer assures that when a potential is applied between the anode and the cathode the organic light emitting layer generates electromagnetic radiation only when the IR sensing layer is irradiated with IR radiation.

公开(公告)号：US20150372252A1

公开(公告)日：2015-12-24

申请号：US14766722

申请日：2014-02-13

申请人： UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

发明人： Franky So ,  Wonhoe Koo

IPC分类号： H01L51/52 ,  H01L51/00 ,  H01L51/56 ,  H01L51/50

CPC分类号： H01L51/5209 ,  H01L51/0096 ,  H01L51/5012 ,  H01L51/5056 ,  H01L51/5215 ,  H01L51/5221 ,  H01L51/5225 ,  H01L51/5275 ,  H01L51/56

摘要： A layered organic light emitting diode (OLED) device comprises a buckled structure over a portion of the light emitting face to provide improved light output relative to flat OLED devices. The buckled structure has a fine buckling and a gross buckling, which are quasi-periodic. Embodiments of the invention are directed to a method of producing the OLED device comprising a buckled structure, where a transparent substrate coated with a transparent elastomeric layer has a thin metal layer deposited on a portion of the elastomeric layer at an elevated temperature. Upon cooling the metal layer buckles with the formation of the quasi-periodic buckling. Subsequently the metal layer is oxidized to a metal oxide layer that retains the buckling. An OLED with a buckling structure over a portion of the emitting face is constructed on the metal oxide layer and retains the buckling of the metal oxide layer.

摘要翻译： 层状有机发光二极管（OLED）器件包括在发光面的一部分上的弯曲结构，以提供相对于平面OLED器件的改进的光输出。 弯曲结构具有精细的屈曲和大的屈曲，这是准周期性的。 本发明的实施方案涉及一种制造包含弯曲结构的OLED器件的方法，其中涂覆有透明弹性体层的透明基底在高温下沉积在弹性体层的一部分上的薄金属层。 在冷却金属层时，形成准周期性屈曲。 随后金属层被氧化成保持屈曲的金属氧化物层。 在金属氧化物层上构造具有在发光面的一部分上的翘曲结构的OLED并且保持金属氧化物层的翘曲。