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    Storage capacitor for semiconductor memory cells and method of manufacturing a storage capacitor
    4.
    发明授权
    Storage capacitor for semiconductor memory cells and method of manufacturing a storage capacitor 失效
    用于半导体存储单元的存储电容器和制造存储电容器的方法

    公开(公告)号：US07449739B2

    公开(公告)日：2008-11-11

    申请号：US11339744

    申请日：2006-01-25

    申请人： Johannes Heitmann ,  Peter Moll ,  Odo Wunnicke ,  Till Schloesser

    发明人： Johannes Heitmann ,  Peter Moll ,  Odo Wunnicke ,  Till Schloesser

    IPC分类号： H01L27/108 ,  H01L29/94

    CPC分类号： H01L28/91 ,  H01L27/10852

    摘要： A capacitor for a dynamic semiconductor memory cell, a memory and method of making a memory is disclosed. In one embodiment, a storage electrode of the capacitor has a pad-shaped lower section and a cup-shaped upper section, which is placed on top of the lower section. A lower section of a backside electrode encloses the pad-shaped section of the storage electrode. An upper section of the backside electrode is enclosed by the cup-shaped upper section of the storage electrode. A first capacitor dielectric separates the lower sections of the backside and the storage electrodes. A second capacitor dielectric separates the upper sections of the backside and the storage electrodes. The electrode area of the capacitor is enlarged while the requirements for the deposition of the capacitor dielectric are relaxed. Aspect ratios for deposition and etching processes are reduced.

    摘要翻译： 公开了用于动态半导体存储器单元的电容器，存储器和制造存储器的方法。 在一个实施例中，电容器的存储电极具有衬垫形下部和杯形上部，其放置在下部的顶部。 背面电极的下部包围存储电极的垫状部分。 背面电极的上部被储存电极的杯状上部包围。 第一电容器介质分离背面的下部和存储电极。 第二电容器电介质将背面的上部和存储电极分开。 电容器的电极面积被放大，而电容器电介质沉积的要求被放宽。 降低沉积和蚀刻工艺的长宽比。

    Storage capacitor for semiconductor memory cells and method of manufacturing a storage capacitor
    5.
    发明申请
    Storage capacitor for semiconductor memory cells and method of manufacturing a storage capacitor 失效
    用于半导体存储单元的存储电容器和制造存储电容器的方法

    公开(公告)号：US20070170487A1

    公开(公告)日：2007-07-26

    申请号：US11339744

    申请日：2006-01-25

    申请人： Johannes Heitmann ,  Peter Moll ,  Odo Wunnicke ,  Till Schloesser

    发明人： Johannes Heitmann ,  Peter Moll ,  Odo Wunnicke ,  Till Schloesser

    IPC分类号： H01L27/108 ,  H01L21/20

    CPC分类号： H01L28/91 ,  H01L27/10852

    摘要： A capacitor for a dynamic semiconductor memory cell, a memory and method of making a memory is disclosed. In one embodiment, a storage electrode of the capacitor has a pad-shaped lower section and a cup-shaped upper section, which is placed on top of the lower section. A lower section of a backside electrode encloses the pad-shaped section of the storage electrode. An upper section of the backside electrode is enclosed by the cup-shaped upper section of the storage electrode. A first capacitor dielectric separates the lower sections of the backside and the storage electrodes. A second capacitor dielectric separates the upper sections of the backside and the storage electrodes. The electrode area of the capacitor is enlarged while the requirements for the deposition of the capacitor dielectric are relaxed. Aspect ratios for deposition and etching processes are reduced.

    摘要翻译： 公开了用于动态半导体存储器单元的电容器，存储器和制造存储器的方法。 在一个实施例中，电容器的存储电极具有衬垫形下部和杯形上部，其放置在下部的顶部。 背面电极的下部包围存储电极的垫状部分。 背面电极的上部被储存电极的杯状上部包围。 第一电容器介质分离背面的下部和存储电极。 第二电容器电介质将背面的上部和存储电极分开。 电容器的电极面积被放大，而电容器电介质沉积的要求被放宽。 降低沉积和蚀刻工艺的长宽比。

    Method for forming a capacitor structure
    6.
    发明授权
    Method for forming a capacitor structure 失效
    形成电容器结构的方法

    公开(公告)号：US07615444B2

    公开(公告)日：2009-11-10

    申请号：US11477581

    申请日：2006-06-29

    申请人： Odo Wunnicke ,  Peter Moll ,  Kristin Schupke

    发明人： Odo Wunnicke ,  Peter Moll ,  Kristin Schupke

    IPC分类号： H01L21/8242

    CPC分类号： H01L28/91 ,  H01L27/10808 ,  H01L27/10852

    摘要： A method for forming a capacitor structure, according to which the following consecutive steps are executed: providing a substrate having on its surface contact pads and a dielectric mold provided with at least one trench leaving exposed the contact pads; forming a first conductive layer on side walls of the trench in a top region of the trench the conductive layer being without contact to the contact pads; depositing a first dielectric layer; depositing a second conductive layer on the contact pad and on the side walls of the trench; depositing a second dielectric layer; depositing a third conductive layer; and forming a vertical plug interconnecting the first conductive layer and the third conductive layer.

    摘要翻译： 一种用于形成电容器结构的方法，根据该方法执行以下连续步骤：提供在其表面上具有接触焊盘的基板和设置有至少一个沟槽的介电模，留下暴露的接触焊盘; 在所述沟槽的顶部区域中在所述沟槽的侧壁上形成第一导电层，所述导电层不与所述接触焊盘接触; 沉积第一介电层; 在所述接触焊盘和所述沟槽的侧壁上沉积第二导电层; 沉积第二电介质层; 沉积第三导电层; 以及形成互连所述第一导电层和所述第三导电层的垂直插头。

    Method for producing differently doped semiconductors
    7.
    发明授权
    Method for producing differently doped semiconductors 有权

    公开(公告)号：US09887313B2

    公开(公告)日：2018-02-06

    申请号：US15307689

    申请日：2015-04-17

    申请人： Christoph Mader ,  Christian Guenther ,  Joachim Erz ,  Susanne Christine Martens ,  Jasmin Lehmkuhl ,  Stephan Traut ,  Odo Wunnicke

    发明人： Christoph Mader ,  Christian Guenther ,  Joachim Erz ,  Susanne Christine Martens ,  Jasmin Lehmkuhl ,  Stephan Traut ,  Odo Wunnicke

    IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L21/22 ,  H01L21/228

    CPC分类号： H01L31/1804 ,  H01L21/2225 ,  H01L21/228 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

    摘要： The present invention relates to a liquid-phase method for doping a semiconductor substrate, characterized in that a first composition containing at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the first composition; a second composition containing at least one second dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the second composition, where the one or more region(s) coated with the first composition and the one or more region(s) coated with the second composition are different and do not overlap significantly and where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; the regions of the surface of the semiconductor substrate coated with the first composition and with the second composition are each fully or partly activated; optionally, the unactivated regions of the surface of the semiconductor substrate coated with the first composition and with the second composition are each oxidized; and the semiconductor substrate is heated to a temperature at which the dopants diffuse out of the coating into the semiconductor substrate. The invention further relates to the semiconductor obtainable by the method and to the use thereof, especially in the production of solar cells.

    Method for manufacturing a capacitor electrode structure
    8.
    发明授权
    Method for manufacturing a capacitor electrode structure 失效
    电容器电极结构的制造方法

    公开(公告)号：US07544562B2

    公开(公告)日：2009-06-09

    申请号：US11489052

    申请日：2006-07-19

    申请人： Peter Moll ,  Odo Wunnicke

    发明人： Peter Moll ,  Odo Wunnicke

    IPC分类号： H01L21/8234 ,  H01L21/8244 ,  H01L21/8242

    CPC分类号： H01G4/005 ,  H01G4/33 ,  H01L27/0207 ,  H01L27/10852 ,  H01L28/60

    摘要： A method for manufacturing a capacitor electrode structure, according to which the following steps are executed: A substrate is provided, which comprises contact pads arranged in lines and rows on a surface of the substrate. The lines are non-parallel to the rows. A first mold is applied on the substrate. At least one first trench is formed into the first mold above the contact pads. The first trench spans over at least two contact pads arranged in one row. A first dielectric layer is applied on side walls of the at least one first trench for forming first supporting walls. A second mold is applied on the substrate. At least one second trench is formed into the second mold above the contact pads. The second trench spans over at least two contact pads arranged in one line. A second dielectric layer is applied on side walls of the at least one second trench for forming second supporting walls. And a conductive layer is applied on the first and second supporting walls for forming a first electrode of the capacitor structure.

    摘要翻译： 一种用于制造电容器电极结构的方法，根据该方法执行以下步骤：提供基板，其包括在所述基板的表面上以行和行排列的接触焊盘。 线条与行不平行。 将第一模具施加在基板上。 在接触垫上方的第一模具中形成至少一个第一沟槽。 第一沟槽跨越排列成一行的至少两个接触垫。 第一电介质层被施加在用于形成第一支撑壁的至少一个第一沟槽的侧壁上。 在基板上施加第二模具。 在接触垫上方的第二模具中形成至少一个第二沟槽。 第二沟槽跨越排列成一行的至少两个接触垫。 第二介电层施加在至少一个第二沟槽的侧壁上，用于形成第二支撑壁。 并且在第一和第二支撑壁上施加导电层以形成电容器结构的第一电极。

    Stacked capacitor and method for producing stacked capacitors for dynamic memory cells
    9.
    发明申请
    Stacked capacitor and method for producing stacked capacitors for dynamic memory cells 失效
    叠层电容器和用于制造用于动态存储单元的叠层电容器的方法

    公开(公告)号：US20070059893A1

    公开(公告)日：2007-03-15

    申请号：US11518504

    申请日：2006-09-07

    申请人： Stephan Kudelka ,  Peter Moll ,  Stefan Jakschik ,  Odo Wunnicke

    发明人： Stephan Kudelka ,  Peter Moll ,  Stefan Jakschik ,  Odo Wunnicke

    IPC分类号： H01L21/336

    CPC分类号： H01L28/90 ,  H01L27/10814 ,  H01L27/10852

    摘要： A method produces stacked capacitors for dynamic memory cells, in which a number of trenches (48) are formed in the masking layer (40), each trench (48) being arranged above a respective contact plug (26) and extending from the top (42) of the masking layer (40) to the contact plugs (26). A conductive layer (50) covers the side walls (49) of the trenches (48) and the contact plugs (26) in order to form a first electrode (60) of a stacked capacitor (12). In an upper region (63), which is remote from the contact stack (26), the conductive layer (50) is replaced by an insulating layer, so that it is not possible for a short circuit to arise in the event of any adhesion between adjacent electrodes.

    摘要翻译： 一种方法产生用于动态存储单元的堆叠电容器，其中在掩模层（40）中形成有多个沟槽（48），每个沟槽（48）布置在相应的接触插塞（26）的上方并从顶部 屏蔽层（40）的至少部分（42）连接到接触插塞（26）。 为了形成叠层电容器（12）的第一电极（60），导电层（50）覆盖沟槽（48）的侧壁（49）和接触插塞（26）。 在远离接触堆叠（26）的上部区域（63）中，导电层（50）由绝缘层代替，使得在任何粘附的情况下不可能出现短路 在相邻电极之间。

    Semiconductor component with MIM capacitor
    10.
    发明授权
    Semiconductor component with MIM capacitor 失效
    具有MIM电容器的半导体元件

    公开(公告)号：US07659602B2

    公开(公告)日：2010-02-09

    申请号：US12131728

    申请日：2008-06-02

    申请人： Stefan Tegen ,  Klaus Muemmler ,  Peter Baars ,  Odo Wunnicke

    发明人： Stefan Tegen ,  Klaus Muemmler ,  Peter Baars ,  Odo Wunnicke

    IPC分类号： H01L49/00

    CPC分类号： H01L28/90 ,  H01L28/86

    摘要： A structure and method of forming a capacitor is described. In one embodiment, the capacitor includes a cylindrical first electrode having an inner portion bounded by a bottom surface and an inner sidewall surface, the first electrode further having an outer sidewall, the first electrode being formed from a conductive material. An insulating fill material is disposed within the inner portion of the first electrode. A capacitor dielectric is disposed adjacent at least a portion of the outer sidewall of the first electrode. A second electrode is disposed adjacent the outer sidewall of the first electrode and separated therefrom by the capacitor dielectric. The second electrode is not formed within the inner portion of the first electrode.

    摘要翻译： 描述形成电容器的结构和方法。 在一个实施例中，电容器包括圆柱形第一电极，其具有由底表面和内侧壁表面限定的内部部分，第一电极还具有外侧壁，第一电极由导电材料形成。 绝缘填充材料设置在第一电极的内部部分内。 电容器电介质设置在第一电极的外侧壁的至少一部分附近。 第二电极邻近第一电极的外侧壁设置，并由电容器电介质分离。 第二电极不形成在第一电极的内部。