公开(公告)号：US07615444B2

公开(公告)日：2009-11-10

申请号：US11477581

申请日：2006-06-29

申请人： Odo Wunnicke ,  Peter Moll ,  Kristin Schupke

发明人： Odo Wunnicke ,  Peter Moll ,  Kristin Schupke

IPC分类号： H01L21/8242

CPC分类号： H01L28/91 ,  H01L27/10808 ,  H01L27/10852

摘要： A method for forming a capacitor structure, according to which the following consecutive steps are executed: providing a substrate having on its surface contact pads and a dielectric mold provided with at least one trench leaving exposed the contact pads; forming a first conductive layer on side walls of the trench in a top region of the trench the conductive layer being without contact to the contact pads; depositing a first dielectric layer; depositing a second conductive layer on the contact pad and on the side walls of the trench; depositing a second dielectric layer; depositing a third conductive layer; and forming a vertical plug interconnecting the first conductive layer and the third conductive layer.

摘要翻译： 一种用于形成电容器结构的方法，根据该方法执行以下连续步骤：提供在其表面上具有接触焊盘的基板和设置有至少一个沟槽的介电模，留下暴露的接触焊盘; 在所述沟槽的顶部区域中在所述沟槽的侧壁上形成第一导电层，所述导电层不与所述接触焊盘接触; 沉积第一介电层; 在所述接触焊盘和所述沟槽的侧壁上沉积第二导电层; 沉积第二电介质层; 沉积第三导电层; 以及形成互连所述第一导电层和所述第三导电层的垂直插头。

公开(公告)号：US20080003740A1

公开(公告)日：2008-01-03

申请号：US11477581

申请日：2006-06-29

申请人： Odo Wunnicke ,  Peter Moll ,  Kristin Schupke

发明人： Odo Wunnicke ,  Peter Moll ,  Kristin Schupke

IPC分类号： H01L21/8244

CPC分类号： H01L28/91 ,  H01L27/10808 ,  H01L27/10852

摘要： A method for forming a capacitor structure, according to which the following consecutive steps are executed: providing a substrate having on its surface contact pads and a dielectric mold provided with at least one trench leaving exposed the contact pads; forming a first conductive layer on side walls of the trench in a top region of the trench the conductive layer being without contact to the contact pads;depositing a first dielectric layer; depositing a second conductive layer on the contact pad and on the side walls of the trench; depositing a second dielectric layer; depositing a third conductive layer; and forming a vertical plug interconnecting the first conductive layer and the third conductive layer.

摘要翻译： 一种用于形成电容器结构的方法，根据该方法执行以下连续步骤：提供在其表面上具有接触焊盘的基板和设置有至少一个沟槽的介电模，留下暴露的接触焊盘; 在所述沟槽的顶部区域中在所述沟槽的侧壁上形成第一导电层，所述导电层不与所述接触焊盘接触; 沉积第一介电层; 在所述接触焊盘和所述沟槽的侧壁上沉积第二导电层; 沉积第二电介质层; 沉积第三导电层; 以及形成互连所述第一导电层和所述第三导电层的垂直插头。

公开(公告)号：US07544562B2

公开(公告)日：2009-06-09

申请号：US11489052

申请日：2006-07-19

申请人： Peter Moll ,  Odo Wunnicke

发明人： Peter Moll ,  Odo Wunnicke

IPC分类号： H01L21/8234 ,  H01L21/8244 ,  H01L21/8242

CPC分类号： H01G4/005 ,  H01G4/33 ,  H01L27/0207 ,  H01L27/10852 ,  H01L28/60

摘要： A method for manufacturing a capacitor electrode structure, according to which the following steps are executed: A substrate is provided, which comprises contact pads arranged in lines and rows on a surface of the substrate. The lines are non-parallel to the rows. A first mold is applied on the substrate. At least one first trench is formed into the first mold above the contact pads. The first trench spans over at least two contact pads arranged in one row. A first dielectric layer is applied on side walls of the at least one first trench for forming first supporting walls. A second mold is applied on the substrate. At least one second trench is formed into the second mold above the contact pads. The second trench spans over at least two contact pads arranged in one line. A second dielectric layer is applied on side walls of the at least one second trench for forming second supporting walls. And a conductive layer is applied on the first and second supporting walls for forming a first electrode of the capacitor structure.

摘要翻译： 一种用于制造电容器电极结构的方法，根据该方法执行以下步骤：提供基板，其包括在所述基板的表面上以行和行排列的接触焊盘。 线条与行不平行。 将第一模具施加在基板上。 在接触垫上方的第一模具中形成至少一个第一沟槽。 第一沟槽跨越排列成一行的至少两个接触垫。 第一电介质层被施加在用于形成第一支撑壁的至少一个第一沟槽的侧壁上。 在基板上施加第二模具。 在接触垫上方的第二模具中形成至少一个第二沟槽。 第二沟槽跨越排列成一行的至少两个接触垫。 第二介电层施加在至少一个第二沟槽的侧壁上，用于形成第二支撑壁。 并且在第一和第二支撑壁上施加导电层以形成电容器结构的第一电极。

公开(公告)号：US20070059893A1

公开(公告)日：2007-03-15

申请号：US11518504

申请日：2006-09-07

申请人： Stephan Kudelka ,  Peter Moll ,  Stefan Jakschik ,  Odo Wunnicke

发明人： Stephan Kudelka ,  Peter Moll ,  Stefan Jakschik ,  Odo Wunnicke

IPC分类号： H01L21/336

CPC分类号： H01L28/90 ,  H01L27/10814 ,  H01L27/10852

摘要： A method produces stacked capacitors for dynamic memory cells, in which a number of trenches (48) are formed in the masking layer (40), each trench (48) being arranged above a respective contact plug (26) and extending from the top (42) of the masking layer (40) to the contact plugs (26). A conductive layer (50) covers the side walls (49) of the trenches (48) and the contact plugs (26) in order to form a first electrode (60) of a stacked capacitor (12). In an upper region (63), which is remote from the contact stack (26), the conductive layer (50) is replaced by an insulating layer, so that it is not possible for a short circuit to arise in the event of any adhesion between adjacent electrodes.

摘要翻译： 一种方法产生用于动态存储单元的堆叠电容器，其中在掩模层（40）中形成有多个沟槽（48），每个沟槽（48）布置在相应的接触插塞（26）的上方并从顶部 屏蔽层（40）的至少部分（42）连接到接触插塞（26）。 为了形成叠层电容器（12）的第一电极（60），导电层（50）覆盖沟槽（48）的侧壁（49）和接触插塞（26）。 在远离接触堆叠（26）的上部区域（63）中，导电层（50）由绝缘层代替，使得在任何粘附的情况下不可能出现短路 在相邻电极之间。

公开(公告)号：US20070286945A1

公开(公告)日：2007-12-13

申请号：US11687426

申请日：2007-03-16

申请人： Peter Lahnor ,  Odo Wunnicke ,  Johannes Heitmann ,  Peter Moll ,  Andreas Orth

发明人： Peter Lahnor ,  Odo Wunnicke ,  Johannes Heitmann ,  Peter Moll ,  Andreas Orth

IPC分类号： B05D5/12 ,  B05D5/00

CPC分类号： H01L28/40 ,  H01L27/10861 ,  Y10S977/70 ,  Y10S977/72

摘要： A method for forming an integrated circuit having openings in a mold layer and for producing capacitors is disclosed. In one embodiment, nanotubes or nanowires are grown vertically on a horizontal substrate surface. The nanotubes or nanowires serve as a template for forming openings in a mold layer. The substrate is covered with a mold material after the formation of the nanowires or nanotubes. One embodiment provides mold layers having openings with a much higher aspect ratio.

摘要翻译： 公开了一种在模具层中形成具有开口并用于制造电容器的集成电路的方法。 在一个实施例中，纳米管或纳米线在水平衬底表面上垂直生长。 纳米管或纳米线用作在模具层中形成开口的模板。 在形成纳米线或纳米管之后，用模具材料覆盖基底。 一个实施例提供了具有高得多的纵横比的开口的模具层。

公开(公告)号：US07776759B2

公开(公告)日：2010-08-17

申请号：US11687426

申请日：2007-03-16

申请人： Peter Lahnor ,  Odo Wunnicke ,  Johannes Heitmann ,  Peter Moll ,  Andreas Orth

发明人： Peter Lahnor ,  Odo Wunnicke ,  Johannes Heitmann ,  Peter Moll ,  Andreas Orth

IPC分类号： B82B1/00 ,  H01L29/92 ,  B82B3/00

CPC分类号： H01L28/40 ,  H01L27/10861 ,  Y10S977/70 ,  Y10S977/72

摘要： A method for forming an integrated circuit having openings in a mold layer and for producing capacitors is disclosed. In one embodiment, nanotubes or nanowires are grown vertically on a horizontal substrate surface. The nanotubes or nanowires serve as a template for forming openings in a mold layer. The substrate is covered with a mold material after the formation of the nanowires or nanotubes. One embodiment provides mold layers having openings with a much higher aspect ratio.

摘要翻译： 公开了一种在模具层中形成具有开口并用于制造电容器的集成电路的方法。 在一个实施例中，纳米管或纳米线在水平衬底表面上垂直生长。 纳米管或纳米线用作在模具层中形成开口的模板。 在形成纳米线或纳米管之后，用模具材料覆盖基底。 一个实施例提供了具有高得多的纵横比的开口的模具层。

公开(公告)号：US07449739B2

公开(公告)日：2008-11-11

申请号：US11339744

申请日：2006-01-25

申请人： Johannes Heitmann ,  Peter Moll ,  Odo Wunnicke ,  Till Schloesser

发明人： Johannes Heitmann ,  Peter Moll ,  Odo Wunnicke ,  Till Schloesser

IPC分类号： H01L27/108 ,  H01L29/94

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： A capacitor for a dynamic semiconductor memory cell, a memory and method of making a memory is disclosed. In one embodiment, a storage electrode of the capacitor has a pad-shaped lower section and a cup-shaped upper section, which is placed on top of the lower section. A lower section of a backside electrode encloses the pad-shaped section of the storage electrode. An upper section of the backside electrode is enclosed by the cup-shaped upper section of the storage electrode. A first capacitor dielectric separates the lower sections of the backside and the storage electrodes. A second capacitor dielectric separates the upper sections of the backside and the storage electrodes. The electrode area of the capacitor is enlarged while the requirements for the deposition of the capacitor dielectric are relaxed. Aspect ratios for deposition and etching processes are reduced.

摘要翻译： 公开了用于动态半导体存储器单元的电容器，存储器和制造存储器的方法。 在一个实施例中，电容器的存储电极具有衬垫形下部和杯形上部，其放置在下部的顶部。 背面电极的下部包围存储电极的垫状部分。 背面电极的上部被储存电极的杯状上部包围。 第一电容器介质分离背面的下部和存储电极。 第二电容器电介质将背面的上部和存储电极分开。 电容器的电极面积被放大，而电容器电介质沉积的要求被放宽。 降低沉积和蚀刻工艺的长宽比。

公开(公告)号：US07413951B2

公开(公告)日：2008-08-19

申请号：US11518504

申请日：2006-09-07

申请人： Stephan Kudelka ,  Peter Moll ,  Stefan Jakschik ,  Odo Wunnicke

发明人： Stephan Kudelka ,  Peter Moll ,  Stefan Jakschik ,  Odo Wunnicke

IPC分类号： H01L21/8242

CPC分类号： H01L28/90 ,  H01L27/10814 ,  H01L27/10852

摘要： A method produces stacked capacitors for dynamic memory cells, in which a number of trenches (48) are formed in the masking layer (40), each trench (48) being arranged above a respective contact plug (26) and extending from the top (42) of the masking layer (40) to the contact plugs (26). A conductive layer (50) covers the side walls (49) of the trenches (48) and the contact plugs (26) in order to form a first electrode (60) of a stacked capacitor (12). In an upper region (63), which is remote from the contact stack (26), the conductive layer (50) is replaced by an insulating layer, so that it is not possible for a short circuit to arise in the event of any adhesion between adjacent electrodes.

摘要翻译： 一种方法产生用于动态存储单元的堆叠电容器，其中在掩模层（40）中形成有多个沟槽（48），每个沟槽（48）布置在相应的接触插塞（26）的上方并从顶部 屏蔽层（40）的至少部分（42）连接到接触插塞（26）。 为了形成叠层电容器（12）的第一电极（60），导电层（50）覆盖沟槽（48）的侧壁（49）和接触插塞（26）。 在远离接触堆叠（26）的上部区域（63）中，导电层（50）由绝缘层代替，使得在任何粘附的情况下不可能出现短路 在相邻电极之间。

公开(公告)号：US20080006863A1

公开(公告)日：2008-01-10

申请号：US11489052

申请日：2006-07-19

申请人： Peter Moll ,  Odo Wunnicke

发明人： Peter Moll ,  Odo Wunnicke

IPC分类号： H01L29/94

CPC分类号： H01G4/005 ,  H01G4/33 ,  H01L27/0207 ,  H01L27/10852 ,  H01L28/60

摘要： A method for manufacturing a capacitor electrode structure, according to which the following steps are executed: A substrate is provided, which comprises contact pads arranged in lines and rows on a surface of the substrate. The lines are non-parallel to the rows. A first mold is applied on the substrate. At least one first trench is formed into the first mold above the contact pads. The first trench spans over at least two contact pads arranged in one row. A first dielectric layer is applied on side walls of the at least one first trench for forming first supporting walls. A second mold is applied on the substrate. At least one second trench is formed into the second mold above the contact pads. The second trench spans over at least two contact pads arranged in one line. A second dielectric layer is applied on side walls of the at least one second trench for forming second supporting walls. And a conductive layer is applied on the first and second supporting walls for forming a first electrode of the capacitor structure.

摘要翻译： 一种用于制造电容器电极结构的方法，根据该方法执行以下步骤：提供基板，其包括在所述基板的表面上以行和行排列的接触焊盘。 线条与行不平行。 将第一模具施加在基板上。 在接触垫上方的第一模具中形成至少一个第一沟槽。 第一沟槽跨越排列成一行的至少两个接触垫。 第一电介质层被施加在用于形成第一支撑壁的至少一个第一沟槽的侧壁上。 在基板上施加第二个模具。 在接触垫上方的第二模具中形成至少一个第二沟槽。 第二沟槽跨越排列成一行的至少两个接触垫。 第二介电层施加在至少一个第二沟槽的侧壁上，用于形成第二支撑壁。 并且在第一和第二支撑壁上施加导电层以形成电容器结构的第一电极。

公开(公告)号：US20070170487A1

公开(公告)日：2007-07-26

申请号：US11339744

申请日：2006-01-25

申请人： Johannes Heitmann ,  Peter Moll ,  Odo Wunnicke ,  Till Schloesser

发明人： Johannes Heitmann ,  Peter Moll ,  Odo Wunnicke ,  Till Schloesser

IPC分类号： H01L27/108 ,  H01L21/20

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： A capacitor for a dynamic semiconductor memory cell, a memory and method of making a memory is disclosed. In one embodiment, a storage electrode of the capacitor has a pad-shaped lower section and a cup-shaped upper section, which is placed on top of the lower section. A lower section of a backside electrode encloses the pad-shaped section of the storage electrode. An upper section of the backside electrode is enclosed by the cup-shaped upper section of the storage electrode. A first capacitor dielectric separates the lower sections of the backside and the storage electrodes. A second capacitor dielectric separates the upper sections of the backside and the storage electrodes. The electrode area of the capacitor is enlarged while the requirements for the deposition of the capacitor dielectric are relaxed. Aspect ratios for deposition and etching processes are reduced.

摘要翻译： 公开了用于动态半导体存储器单元的电容器，存储器和制造存储器的方法。 在一个实施例中，电容器的存储电极具有衬垫形下部和杯形上部，其放置在下部的顶部。 背面电极的下部包围存储电极的垫状部分。 背面电极的上部被储存电极的杯状上部包围。 第一电容器介质分离背面的下部和存储电极。 第二电容器电介质将背面的上部和存储电极分开。 电容器的电极面积被放大，而电容器电介质沉积的要求被放宽。 降低沉积和蚀刻工艺的长宽比。