公开(公告)号：US06203926B1

公开(公告)日：2001-03-20

申请号：US09473142

申请日：1999-12-28

申请人： Umar Moez Uddin Ahmad ,  Harsaran Singh Bhatia ,  Satya Pal Singh Bhatia ,  Hormazdyar Minocher Dalal ,  William Henry Price ,  Sampath Purushothaman

发明人： Umar Moez Uddin Ahmad ,  Harsaran Singh Bhatia ,  Satya Pal Singh Bhatia ,  Hormazdyar Minocher Dalal ,  William Henry Price ,  Sampath Purushothaman

IPC分类号： H01L2912

CPC分类号： H01L23/49811 ,  C23C14/042 ,  H01L21/4846 ,  H01L23/498 ,  H01L23/49866 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K3/143 ,  H05K3/244 ,  Y10S148/105 ,  Y10T428/12528 ,  Y10T428/12743 ,  Y10T428/1275 ,  Y10T428/12806 ,  Y10T428/12819 ,  Y10T428/12861 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  H01L2924/00

摘要： A corrosion resistant, multi-layer structure on a substrate including an adhesion metallic layer on the substrate, a cushion metallic layer on the adhesion layer, a diffusion barrier layer on the cushion layer, and an impermeable gold layer that encapsulates all the layers, is substantially even on all sides of the layers, and contacts a region on the substrate adjacent the layers to prevent oxidation and corrosion.

摘要翻译： 在基材上具有粘附金属层，粘合层上的缓冲金属层，缓冲层上的扩散阻挡层以及封装所有层的不渗透金层的基板上的耐腐蚀性多层结构是 基本上均匀地在层的所有侧面上，并且接触邻近层的衬底上的区域以防止氧化和腐蚀。

公开(公告)号：US3987216A

公开(公告)日：1976-10-19

申请号：US645766

申请日：1975-12-31

申请人： Harsaran Singh Bhatia ,  Harry Charles Calhoun ,  Robert Leonard Melhado ,  Randolph Huff Schnitzel

发明人： Harsaran Singh Bhatia ,  Harry Charles Calhoun ,  Robert Leonard Melhado ,  Randolph Huff Schnitzel

IPC分类号： H01L29/872 ,  H01L21/28 ,  H01L21/285 ,  H01L29/47 ,  B05D5/12

CPC分类号： H01L21/28537 ,  H01L29/47 ,  Y10S438/909

摘要： A method is disclosed for forming Schottky barrier junctions having improved barrier height characteristics. The method involves the use of a layer of polysilicon deposited upon the Schottky metal prior to sintering. The polysilicon layer acts as a source from which silicon is diffused into the metal during the sintering operation. After sintering the junction is quenched or cooled at a rapid rate whereby outdiffusion of the silicon is prevented.

公开(公告)号：US3955210A

公开(公告)日：1976-05-04

申请号：US537511

申请日：1974-12-30

申请人： Harsaran Singh Bhatia ,  Gerald Dennis O'Rourke ,  Siegfried K. Wiedmann

发明人： Harsaran Singh Bhatia ,  Gerald Dennis O'Rourke ,  Siegfried K. Wiedmann

IPC分类号： H01L27/08 ,  H01L27/092 ,  H01L29/06 ,  H01L29/78 ,  H01L27/02

CPC分类号： H01L27/0921 ,  H01L29/0638

摘要： A complementary field effect transistor structure which eliminates the problems caused by parasitic currents between devices. The currents are contained within parasitic bipolar devices formed between the various regions of the FETs. A portion of the collector current of the parasitic bipolar devices is drained away so that the loop gain is less than one. This is achieved by placing guard regions of conductivity type which are the same as the channel type of the transistors adjacent said regions. The guard region is preferably in the form of a continuous ring around its associated FET.

摘要翻译： 互补的场效应晶体管结构，消除了由器件之间的寄生电流引起的问题。 电流包含在形成在FET的各个区域之间的寄生双极器件内。 寄生双极器件的集电极电流的一部分被排出，使得环路增益小于1。 这是通过放置与所述区域相邻的晶体管的通道类型相同的导电类型的保护区域来实现的。 保护区域优选为围绕其相关联的FET的连续环形式。