公开(公告)号：US20170243954A1

公开(公告)日：2017-08-24

申请号：US15047636

申请日：2016-02-19

申请人： UNITED MICROELECTRONICS CORP.

发明人： Jhen-Cyuan Li ,  Sheng-Hsu Liu ,  Shui-Yen Lu

IPC分类号： H01L29/66 ,  H01L21/265 ,  H01L29/08

CPC分类号： H01L29/66795 ,  H01L21/26513 ,  H01L29/7848

摘要： A method of forming a FinFET device includes following steps. First of all, a fin shaped structure is formed on a substrate. Then, a portion of the fin shaped structure is removed to form a first trench in the fin shaped structure. Next, a cover film is formed to partially cover surfaces of the first trench and to expose a portion of the fin shaped structure. Afterward, the exposed portion of the fin shaped structure is further removed to form a second trench under the first trench. Finally, a barrier layer is formed on surfaces of the second trench, thereby improving the current leakage issues.

公开(公告)号：US20170345938A1

公开(公告)日：2017-11-30

申请号：US15681417

申请日：2017-08-20

申请人： UNITED MICROELECTRONICS CORP.

发明人： Sheng-Hsu Liu ,  Jhen-cyuan Li ,  Chih-Chung Chen ,  Man-Ling Lu ,  Chung-Min Tsai ,  Yi-Wei Chen

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/165

CPC分类号： H01L29/7851 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  Y02E10/50

摘要： A fin structure for a semiconductor device, such as a FinFET structure, has first and second semiconductor layers and an air gap between the layers. The second semiconductor layer includes a recessed portion, the air gap is located in the recessed portion, and the recessed portion has an upwardly-opening acute angle in the range from about 10° to about 55°. The air gap may prevent current leakage. A FinFET device may be manufactured by first recessing and then epitaxially re-growing a source/drain fin, with the regrowth starting over a tubular air gap.

公开(公告)号：US09123744B1

公开(公告)日：2015-09-01

申请号：US14201373

申请日：2014-03-07

申请人： United Microelectronics Corp.

发明人： Chin-I Liao ,  Sheng-Hsu Liu

IPC分类号： H01L29/76 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L29/16 ,  H01L29/161 ,  H01L29/24

CPC分类号： H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

摘要： A method for fabricating a semiconductor device is described. A spacer is formed on a sidewall of a fin structure. A portion of the fin structure is removed to form a cavity exposing at least a portion of the inner sidewall of the spacer. An epitaxy process is performed based on the remaining fin structure to form a semiconductor layer that has a shovel-shaped cross section including: a stem portion in the cavity, and a shovel plane portion contiguous with the stem portion. A semiconductor device is also described, which includes the spacer, the remaining fin structure and the semiconductor layer that are mentioned above.

摘要翻译： 对半导体装置的制造方法进行说明。 间隔件形成在翅片结构的侧壁上。 翼片结构的一部分被去除以形成暴露间隔物的内侧壁的至少一部分的空腔。 基于剩余的翅片结构进行外延工艺以形成具有铲形截面的半导体层，该半导体层包括：腔体中的杆部分和与杆部分相邻的铲平面部分。 还描述了一种半导体器件，其包括上述的间隔物，剩余的鳍结构和半导体层。

公开(公告)号：US20170338327A1

公开(公告)日：2017-11-23

申请号：US15186523

申请日：2016-06-19

申请人： United Semiconductor (Xiamen) Co., Ltd. ,  UNITED MICROELECTRONICS CORP.

发明人： Sheng-Hsu Liu ,  Jhen-Cyuan Li ,  Shui-Yen Lu

IPC分类号： H01L29/66 ,  H01L21/308 ,  H01L29/06 ,  H01L29/78 ,  H01L21/306

CPC分类号： H01L29/66553 ,  H01L21/30604 ,  H01L21/3085 ,  H01L29/0642 ,  H01L29/0657 ,  H01L29/165 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

摘要： A semiconductor device and a manufacturing method thereof, the semiconductor device includes two gate structures and an epitaxial structure. The two gate structures are disposed on a substrate. The epitaxial structure is disposed in the substrate between the gate structures, wherein a protruding portion of the substrate extends into the epitaxial structure in a protection direction.

公开(公告)号：US09496396B1

公开(公告)日：2016-11-15

申请号：US14961902

申请日：2015-12-08

申请人： UNITED MICROELECTRONICS CORP.

发明人： Yu-Ming Hsu ,  Chun-Liang Kuo ,  Tsang-Hsuan Wang ,  Sheng-Hsu Liu ,  Chieh-Lung Wu ,  Chung-Min Tsai ,  Yi-Wei Chen

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/24 ,  H01L29/08

CPC分类号： H01L29/24 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7834 ,  H01L29/7848

摘要： A method for fabricating semiconductor device is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a gate structure on the substrate; (c) performing a first deposition process to form a first epitaxial layer adjacent to the gate structure and performing a first etching process to remove part of the first epitaxial layer at the same time; and (d) performing a second etching process to remove part of the first epitaxial layer.

摘要翻译： 公开了半导体器件的制造方法。 该方法包括以下步骤：（a）提供衬底; （b）在所述基板上形成栅极结构; （c）执行第一沉积工艺以形成与所述栅极结构相邻的第一外延层，并且执行第一蚀刻工艺以同时去除所述第一外延层的一部分; 和（d）执行第二蚀刻工艺以去除第一外延层的一部分。

公开(公告)号：US09397214B1

公开(公告)日：2016-07-19

申请号：US14622943

申请日：2015-02-16

申请人： UNITED MICROELECTRONICS CORP.

发明人： Tien-Chen Chan ,  Hsin-Chang Wu ,  Chun-Yu Chen ,  Ming-Hua Chang ,  Sheng-Hsu Liu ,  Chieh-Lung Wu ,  Chung-Min Tsai ,  Neng-Hui Yang

IPC分类号： H01L27/092 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/36 ,  H01L29/161

CPC分类号： H01L29/7848 ,  H01L29/165 ,  H01L29/785

摘要： A semiconductor device is provided includes a substrate, a gate structure formed on the substrate, an epitaxial source/drain structure respectively formed at two sides of the gate structure, and a boron-rich interface layer. The boron-rich interface layer includes a bottom-and-sidewall portion and a top portion, and the epitaxial source/drain structure is enclosed by the bottom-and-sidewall portion and the top portion.

摘要翻译： 提供了一种半导体器件，包括衬底，形成在衬底上的栅极结构，分别形成在栅极结构的两侧的外延源极/漏极结构和富含硼的界面层。 富硼界面层包括底侧和侧壁部分和顶部，并且外延源极/漏极结构被底部和侧壁部分以及顶部部分包围。

公开(公告)号：US10236179B2

公开(公告)日：2019-03-19

申请号：US15099581

申请日：2016-04-14

申请人： UNITED MICROELECTRONICS CORP.

发明人： Fu-Cheng Yen ,  Tsung-Mu Yang ,  Sheng-Hsu Liu ,  Tsang-Hsuan Wang ,  Chun-Liang Kuo ,  Yu-Ming Hsu ,  Chung-Min Tsai ,  Yi-Wei Chen

IPC分类号： H01L21/02 ,  H01L29/78 ,  H01L29/66

摘要： A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.

公开(公告)号：US10158022B2

公开(公告)日：2018-12-18

申请号：US15681417

申请日：2017-08-20

申请人： UNITED MICROELECTRONICS CORP.

发明人： Sheng-Hsu Liu ,  Jhen-cyuan Li ,  Chih-Chung Chen ,  Man-Ling Lu ,  Chung-Min Tsai ,  Yi-Wei Chen

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/165 ,  H01L29/66 ,  H01L21/764

摘要： A fin structure for a semiconductor device, such as a FinFET structure, has first and second semiconductor layers and an air gap between the layers. The second semiconductor layer includes a recessed portion, the air gap is located in the recessed portion, and the recessed portion has an upwardly-opening acute angle in the range from about 10° to about 55°. The air gap may prevent current leakage. A FinFET device may be manufactured by first recessing and then epitaxially re-growing a source/drain fin, with the regrowth starting over a tubular air gap.

公开(公告)号：US20170301536A1

公开(公告)日：2017-10-19

申请号：US15099581

申请日：2016-04-14

申请人： UNITED MICROELECTRONICS CORP.

发明人： Fu-Cheng Yen ,  Tsung-Mu Yang ,  Sheng-Hsu Liu ,  Tsang-Hsuan Wang ,  Chun-Liang Kuo ,  Yu-Ming Hsu ,  Chung-Min Tsai ,  Yi-Wei Chen

IPC分类号： H01L21/02 ,  H01L29/66

CPC分类号： H01L21/0262 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02639 ,  H01L29/66795 ,  H01L29/7848

摘要： A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.

公开(公告)号：US09847393B2

公开(公告)日：2017-12-19

申请号：US15286541

申请日：2016-10-05

申请人： UNITED MICROELECTRONICS CORP.

发明人： Yu-Ming Hsu ,  Chun-Liang Kuo ,  Tsang-Hsuan Wang ,  Sheng-Hsu Liu ,  Chieh-Lung Wu ,  Chung-Min Tsai ,  Yi-Wei Chen

IPC分类号： H01L29/66 ,  H01L29/24 ,  H01L29/78 ,  H01L29/165

CPC分类号： H01L29/24 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7834 ,  H01L29/7848

摘要： A semiconductor device is disclosed. The semiconductor device includes: a substrate, a gate structure on the substrate, a spacer adjacent to the gate structure, an epitaxial layer in the substrate adjacent to two sides of the spacer, and a dislocation embedded within the epitaxial layer. Preferably, the top surface of the epitaxial layer is lower than the top surface of the substrate, and the top surface of the epitaxial layer has a V-shape.