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公开(公告)号：US07666323B2
公开(公告)日：2010-02-23
申请号：US10920589
申请日：2004-08-18
IPC分类号： C23F1/00
CPC分类号： C23F1/26 , C21D7/06 , C21D2261/00 , C22F1/18 , F28F13/18 , F28F2245/06
摘要： A system and method is disclosed for increasing the emissivity of solid materials, wherein first the surface of the material is mechanically worked to create micro-level defects, and then etched to create a deep micro-rough surface morphology. In this manner, higher efficiencies and lower energy consumption can be obtained when these modified materials are used for heating elements. Heating elements made in accordance with this process thus operate at lower temperatures with longer lifetimes, when the improved heating elements are used with various heating devices.
摘要翻译： 公开了用于增加固体材料的辐射率的系统和方法，其中首先将材料的表面机械加工以产生微观级缺陷，然后蚀刻以产生深的微粗糙表面形态。 以这种方式，当这些改性材料用于加热元件时，可以获得更高的效率和更低的能量消耗。 因此，当改进的加热元件与各种加热装置一起使用时，根据该方法制造的加热元件在较低的温度下工作，寿命更长。
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公开(公告)号：US20050217578A1
公开(公告)日：2005-10-06
申请号：US11129548
申请日：2005-05-13
申请人： Alexander Gurary , Scott Elman , Keng Moy , Vadim Boguslavskiy
发明人： Alexander Gurary , Scott Elman , Keng Moy , Vadim Boguslavskiy
IPC分类号： B65G49/07 , C23C16/44 , C30B25/08 , C30B25/10 , H01L21/00 , H01L21/20 , H01L21/205 , H01L21/336 , H01L21/67 , H01L21/673 , H01L21/677 , H01L21/77 , H01L21/84 , H01L29/786 , C23C16/00 , C23F1/00
CPC分类号： C23C16/4411 , C23C16/4401 , C30B25/08 , C30B25/10 , H01L21/2026 , H01L21/67109 , H01L21/67126 , H01L21/67373 , H01L21/67379 , H01L21/67772 , H01L21/67775 , H01L27/1218 , H01L27/1274 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/66772 , H01L29/78654 , H01L29/78675
摘要： A shutter assembly for a reactor includes a cylindrical shutter for selectively closing a passthrough opening of the reactor, the shutter forming a closed loop and including an internal cavity adapted to receive a cooling fluid, tubing connected with the cylindrical shutter for supplying the cooling fluid to the internal cavity, and an actuator connected with the tubing for moving the tubing and the cylindrical shutter. The cylindrical shutter is movable between a first substantially closed position and a second substantially open position.
摘要翻译： 用于反应器的快门组件包括用于选择性地闭合反应器的通路开口的圆柱形快门，所述活门形成闭合回路并且包括适于接纳冷却流体的内部空腔，与所述圆柱形开闭器连接的管道，用于将冷却流体供应到 内腔，以及与管道连接的致动器，用于移动管道和圆柱形闸门。 圆柱形快门可在第一基本关闭位置和第二基本打开位置之间移动。
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公开(公告)号：US20050274374A1
公开(公告)日：2005-12-15
申请号：US10920589
申请日：2004-08-18
IPC分类号： F24C3/04
CPC分类号： C23F1/26 , C21D7/06 , C21D2261/00 , C22F1/18 , F28F13/18 , F28F2245/06
摘要： A system and method is disclosed for increasing the emissivity of solid materials, wherein first the surface of the material is mechanically worked to create micro-level defects, and then etched to create a deep micro-rough surface morphology. In this manner, higher efficiencies and lower energy consumption can be obtained when these modified materials are used for heating elements. Heating elements made in accordance with this process thus operate at lower temperatures with longer lifetimes, when the improved heating elements are used with various heating devices.
摘要翻译： 公开了用于增加固体材料的辐射率的系统和方法，其中首先将材料的表面机械加工以产生微观级缺陷，然后蚀刻以产生深的微粗糙表面形态。 以这种方式，当这些改性材料用于加热元件时，可以获得更高的效率和更低的能量消耗。 因此，当改进的加热元件与各种加热装置一起使用时，根据该方法制造的加热元件在较低的温度下工作，寿命更长。
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公开(公告)号：US06902623B2
公开(公告)日：2005-06-07
申请号：US10046426
申请日：2002-01-16
申请人： Alexander Gurary , Scott Elman , Keng Moy , Vadim Boguslavskiy
发明人： Alexander Gurary , Scott Elman , Keng Moy , Vadim Boguslavskiy
IPC分类号： B65G49/07 , C23C16/44 , C30B25/08 , C30B25/10 , H01L21/00 , H01L21/20 , H01L21/205 , H01L21/336 , H01L21/67 , H01L21/673 , H01L21/677 , H01L21/77 , H01L21/84 , H01L29/786 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/4411 , C23C16/4401 , C30B25/08 , C30B25/10 , H01L21/2026 , H01L21/67109 , H01L21/67126 , H01L21/67373 , H01L21/67379 , H01L21/67772 , H01L21/67775 , H01L27/1218 , H01L27/1274 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/66772 , H01L29/78654 , H01L29/78675
摘要： A reactor for growing epitaxial layers includes reaction chamber having a passthrough opening for inserting and removing wafer carriers from the reaction chamber. A reactor also includes a cylindrical shutter located inside the reaction chamber for selectively closing the passthrough opening. The cylindrical shutter is movable between a first position for closing the passthrough opening and a second position for opening the passthrough opening. The cylindrical shutter includes an internal cavity adapted to receive a cooling fluid and tubing for introducing the cooling fluid into the internal cavity. The tubing is permanently secured to the shutter and moves simultaneously therewith. The cylindrical shutter and the internal cavity of the shutter surrounds an outer perimeter of the wafer carrier, thereby minimizing nonuniformity in the temperature and flow field characteristics of the reactant gases.
摘要翻译： 用于生长外延层的反应器包括具有用于从反应室插入和移除晶片载体的穿通开口的反应室。 反应器还包括位于反应室内部的用于选择性地关闭通式开口的圆柱形开闭器。 圆柱形快门可以在用于关闭穿通开口的第一位置和用于打开穿通开口的第二位置之间移动。 圆柱形闸门包括适于接收冷却流体的内腔和用于将冷却流体引入内腔的管道。 管道永久地固定在闸门上并同时移动。 圆柱形闸门和闸门的内腔围绕晶片载体的外周，从而最小化反应气体的温度和流场特性的不均匀性。
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5.发明授权公开(公告)号：US06492625B1
公开(公告)日：2002-12-10
申请号：US09671527
申请日：2000-09-27
IPC分类号： H05B102
CPC分类号： G01J5/0022 , C23C16/46 , C23C16/52 , H01L21/67248 , H01L21/68764 , H01L21/68771
摘要： An apparatus and method for providing substantially uniform substrate temperature in a chemical vapor deposition reaction chamber is provided. The method and apparatus utilize a carrier for holding at least one substrate in the reaction chamber and a plurality of heating elements arranged to heat the carrier and the at least one substrate. At least one substrate pyrometer measures the temperature of the substrates to provide a signal representing the process temperature. This signal is used in a feedback loop to control one or more of the heating elements. At least two carrier pyrometers focused at different zones of the carrier are provided. The signals from the carrier pyrometers are compared to one another to provide an indication of temperature non-uniformity. This indication is used in a separate feedback loop to adjust other heating elements so as to maintain temperature uniformity across the carrier.
摘要翻译： 提供了一种用于在化学气相沉积反应室中提供基本均匀的衬底温度的装置和方法。 该方法和装置利用载体将至少一个基板保持在反应室中，以及布置成加热载体和至少一个基板的多个加热元件。 至少一个基板高温计测量基板的温度以提供表示工艺温度的信号。 该信号用于反馈回路中以控制一个或多个加热元件。 提供聚焦在载体的不同区域的至少两个载体高温计。 将来自载体高温计的信号彼此比较以提供温度不均匀性的指示。 该指示用于单独的反馈回路以调整其他加热元件，以便保持载体上的温度均匀性。
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6.发明授权Method and apparatus for measuring the temperature of objects on a fast moving holder 有权用于测量快速移动支架上物体温度的方法和装置公开(公告)号：US06349270B1
公开(公告)日：2002-02-19
申请号：US09321356
申请日：1999-05-27
IPC分类号： G01K1130
CPC分类号： G01J5/0022 , G05D23/1917 , G05D23/26
摘要： Apparatus and method for determining a real time, non-contact temperature measurement of semiconductor wafers is provided in a computer-based data gathering system. The apparatus includes a moving carrier containing semiconductor wafers and a pyrometer and a reflectometer positioned above the spinning wafer carrier for providing temperature and reflectivity data samples taken from the semiconductor wafers and spinning carrier. The data are then provided to an attached computer. The attached computer receives the reflectivity and temperature data pairs, stores them in a data table and records the frequency of occurrence of each of the reflectivity values in the series of reflectivity and temperature data. Software operating on the computer has instructions for identifying at least one reflectivity data peak representative of the reflectivity characteristics of the semiconductor wafers and instructions for determining the temperature of the semiconductor wafers based upon the frequency of occurrence of the reflectivity data and the associated reflectivity-temperature data.
摘要翻译： 在基于计算机的数据采集系统中提供了用于确定半导体晶片的实时非接触温度测量的装置和方法。 该装置包括含有半导体晶片的移动载体和位于旋转晶片载体上方的高温计和反射计，用于提供从半导体晶片和纺丝载体获取的温度和反射率数据样本。 然后将数据提供给附接的计算机。 连接的计算机接收反射率和温度数据对，将它们存储在数据表中，并将每个反射率值的出现频率记录在一系列反射率和温度数据中。 在计算机上操作的软件具有用于识别表示半导体晶片的反射率特性的至少一个反射率数据峰值的指令以及基于反射率数据的发生频率和相关联的反射率温度来确定半导体晶片的温度的指令 数据。
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7.发明授权Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition 有权用于通过化学气相沉积在晶片上生长外延层的无源反应器公开(公告)号：US06726769B2
公开(公告)日：2004-04-27
申请号：US10304646
申请日：2002-11-26
IPC分类号： C30B3500
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/46 , C30B25/12 , H01L21/68771 , H01L21/68785 , H01L21/68792 , Y10S117/90 , Y10T117/10
摘要： The invention describes a CVD reactor on solid substrates and a related method of deposition of epitaxial layers on the wafers. In the reactor of the invention, the wafer carrier is transported between a loading position and a deposition position. In the deposition position, the wafer carrier is detachably mounted on an upper end of a rotatable spindle without an intermediate susceptor. The reactor of the invention may process a single wafer or a plurality of wafers at the same time. The invention also described several embodiments and variants of the invention. One of the variants of the invention provides a decrease in a heat drain from the wafer-supporting assembly through the spindle and a novel heating arrangement therefore. The advantages of the invention include lower reactor cycle, the lower cost and longer lifetime of the component parts, and better temperature control, among others.
摘要翻译： 本发明描述了固体基板上的CVD反应器和在晶片上沉积外延层的相关方法。 在本发明的反应器中，晶片载体在装载位置和沉积位置之间传送。 在沉积位置，晶片载体可拆卸地安装在可旋转主轴的上端，而不需要中间基座。 本发明的反应器可以同时处理单个晶片或多个晶片。本发明还描述了本发明的几个实施例和变型。 本发明的一个变型提供了从晶片支撑组件通过主轴的热量消耗的减少以及新的加热装置。本发明的优点包括较低的反应器周期，较低的成本和较长的组件部件的使用寿命 ，以及更好的温度控制等。
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8.发明授权Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition 有权用于通过化学气相沉积在晶片上生长外延层的无源反应器公开(公告)号：US06685774B2
公开(公告)日：2004-02-03
申请号：US10268464
申请日：2002-10-10
IPC分类号： C30B3500
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/46 , C30B25/12 , H01L21/68771 , H01L21/68785 , H01L21/68792 , Y10S117/90 , Y10T117/10
摘要： A method of growing epitaxial layers on a wafer is provided and includes providing a wafer carrier having a surface for retaining the wafer; placing the wafer on the wafer-retaining surface of the wafer carrier while the wafer carrier is in a loading position separated from a spindle; transporting the wafer carrier toward the spindle; detachably mounting the wafer carrier on the upper end of the spindle for rotation therewith; and rotating the spindle and the wafer carrier while introducing one or more reactants into the reaction chamber. The invention also described several embodiments and variants of the method of the invention.
摘要翻译： 提供了在晶片上生长外延层的方法，并且包括提供具有用于保持晶片的表面的晶片载体; 将晶片放置在晶片载体的晶片保持表面上，同时晶片载体处于与主轴分离的加载位置; 将晶片载体朝向主轴传送; 将晶片载体可拆卸地安装在主轴的上端以与其一起转动; 并且在将一种或多种反应物引入反应室的同时旋转主轴和晶片载体。 本发明还描述了本发明方法的几个实施方案和变体。
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9.发明授权Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition 有权用于通过化学气相沉积在晶片上生长外延层的无源反应器公开(公告)号：US06506252B2
公开(公告)日：2003-01-14
申请号：US09778265
申请日：2001-02-07
IPC分类号： C30B3500
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/46 , C30B25/12 , H01L21/68771 , H01L21/68785 , H01L21/68792 , Y10S117/90 , Y10T117/10
摘要： The invention describes a CVD reactor on solid substrates and a related method of deposition of epitaxial layers on the wafers. In the reactor of the invention, the wafer carrier is transported between a loading position and a deposition position. In the deposition position, the wafer carrier is detachably mounted on an upper end of a rotatable spindle without an intermediate susceptor. The reactor of the invention may process a single wafer at the same time. The invention also describes several embodiments and variants of the invention. One of the variants of the invention provides a decrease in a heat drain from the wafer-supporting assembly through the spindle and a novel heating arrangement therefore. The advantages of the invention include lower reactor cycle, the lower cost and longer lifetime of the component parts, and better temperature control, among others.
摘要翻译： 本发明描述了固体基板上的CVD反应器和在晶片上沉积外延层的相关方法。 在本发明的反应器中，晶片载体在装载位置和沉积位置之间传送。 在沉积位置，晶片载体可拆卸地安装在可旋转主轴的上端，而不需要中间基座。 本发明的反应器可以同时处理单个晶片。 本发明还描述了本发明的几个实施例和变型。 本发明的一个变型提供了从晶片支撑组件通过心轴的热量消耗的减少和因此新的加热装置。 本发明的优点包括反应器周期更短，成本更低，成本更长，寿命更长，更好的温度控制等。
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公开(公告)号：US5336324A
公开(公告)日：1994-08-09
申请号：US803647
申请日：1991-12-04
IPC分类号： C23C14/24 , C23C16/44 , C23C16/455 , C30B25/14 , C23C16/00
CPC分类号： C23C16/45512 , C23C14/243 , C23C16/4551 , C23C16/45591 , C30B25/14
摘要： An apparatus for depositing a coating on a substrate substantially eliminates the occurrence of oval defects by creating a heated tortuous path through which the source material vapors must travel before depositing on the substrate. In addition, shut-off valves for each of the source materials are positioned in the reaction chamber in close proximity to the substrate, thereby enabling layers of different compositions to be deposited with sharp transitions between adjacent layers. The apparatus may be used to efficiently coat large areas uniformly, and works equally well with either elemental or chemical source materials, or certain combinations of both. The features of the coating apparatus may be embodied in replacement source cells for retrofitting in conventional molecular beam and chemical beam epitaxy units.
摘要翻译： 用于在衬底上沉积涂层的装置基本上通过产生加热的曲折路径来消除椭圆形缺陷的发生，通过该曲折路径，源材料蒸气必须在沉积在衬底之前必须行进。 此外，用于每个源材料的截止阀位于反应室中紧邻基板，从而使不同组成的层能够在相邻层之间沉积有明显的过渡。 该装置可以用于有效地涂覆大面积均匀，并且与元素或化学源材料或两者的某些组合一样良好地工作。 涂覆装置的特征可以体现在用于在常规分子束和化学束外延单元中进行改装的替换源电池中。
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