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    DIODE STRUCTURE AND SEMICONDUCTOR DEVICE
    1.
    发明公开
    DIODE STRUCTURE AND SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230290884A1

    公开(公告)日：2023-09-14

    申请号：US17694632

    申请日：2022-03-14

    申请人： Vanguard International Semiconductor Corporation

    发明人： Jing-Da Li ,  Kai-Chuan Kan ,  Chung-Ren Lao

    IPC分类号： H01L29/861 ,  H01L29/40 ,  H01L29/06

    CPC分类号： H01L29/861 ,  H01L29/404 ,  H01L29/0692

    摘要： A diode structure includes a substrate having a first conductivity type, a first well region having a second conductivity type opposite to the first conductivity type and disposed in the substrate, a first doped region having the first conductivity type and disposed in the first well region, a ring-shaped well region having the second conductivity type, disposed in the first well region and surrounding the first doped region, an anode disposed on the first doped region, a second well region having the second conductivity type, separated from the first well region and disposed in the substrate, a second doped region having the second conductivity type and disposed in the second well region, and a cathode disposed on the second doped region.

    Optical sensor and method for forming the same
    2.
    发明授权
    Optical sensor and method for forming the same 有权

    公开(公告)号：US11217708B2

    公开(公告)日：2022-01-04

    申请号：US16890736

    申请日：2020-06-02

    申请人： Vanguard International Semiconductor Corporation

    发明人： Shih-Hao Liu ,  Chung-Ren Lao ,  Chih-Cherng Liao ,  Wu-Hsi Lu ,  Ming-Cheng Lo ,  Wei-Lun Chung ,  Chih-Wei Lin

    IPC分类号： H01L31/02 ,  H01L31/0216 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/0236

    摘要： An optical sensor includes a substrate, a first/second/third well disposed in a sensing region, a deep trench isolation structure, and a passivation layer. The substrate has a first conductivity type and includes the sensing region. The first well has a second conductivity type and a first depth. The second well has the second conductivity type and a second depth. The third well has the first conductivity type and a third depth. The deep trench isolation structure is disposed in the substrate and surrounding the sensing region, wherein the depth of the deep trench isolation structure is greater than the first depth, the first depth is greater than the second depth, and the second depth is greater than the third depth. The passivation layer is disposed over the substrate, wherein the passivation layer includes a plurality of protruding portions disposed directly above the sensing region.

    High voltage semiconductor device
    9.
    发明授权
    High voltage semiconductor device 有权

    公开(公告)号：US11374096B1

    公开(公告)日：2022-06-28

    申请号：US17140140

    申请日：2021-01-04

    申请人： Vanguard International Semiconductor Corporation

    发明人： Chung-Ren Lao ,  Kuan-I Ho ,  Kuo-Chien Hsu ,  Che-Hua Chang ,  Hsiao-Ying Yang ,  Chih-Cherng Liao

    IPC分类号： H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/78

    摘要： The present disclosure provides a high voltage semiconductor device includes a substrate, a first well region, a second well region, a source, a drain, a first electrode structure and a second electrode structure. The first well region and the second well region are disposed in the substrate, and which includes a first conductive type and a second conductive type which are complementary with each other. The source and the drain are respectively disposed within the first well region and the second well region. The first electrode structure and the second electrode structure are both disposed on the substrate, and the distance between the top surface of an electrode of the first electrode structure and the top surface of the substrate includes a first height and a second height which are different from each other.