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公开(公告)号：US20170352521A1
公开(公告)日：2017-12-07
申请号：US15170570
申请日：2016-06-01
Applicant: Veeco Instruments Inc.
Inventor： Boris Druz , Rustam Yevtukhov , Robert Hieronymi , Alan V. Hayes , Mathew Levoso , Peter Porshnev
IPC: H01J37/305 , H01J37/08
CPC classification number: H01J37/3053 , H01J27/18 , H01J37/08 , H01J2237/0802
Abstract: The presently disclosed ion sources include one or more electromagnets for changing the distribution of plasma within a discharge space of an ion source. At least one of the electromagnets is oriented about an outer periphery of a tubular sidewall of the ion source and changes a distribution of the plasma in a peripheral region of the discharge space.
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Patent Agency Ranking
2.发明授权公开(公告)号：US10014164B2
公开(公告)日：2018-07-03
申请号：US15592426
申请日：2017-05-11
Applicant: Veeco Instruments Inc.
Inventor： Boris Druz , Rustam Yevtukhov , Rhodri Elliott , James M. Best, Jr. , Peter Porshnev
IPC: H01J37/36 , H01J37/30 , G01R19/165 , H01J37/32
CPC classification number: H01J37/36 , G01R19/16533 , H01J37/3002 , H01J37/3007 , H01J37/32018 , H01J37/32944 , H01J2237/0206 , H01J2237/0213 , H01J2237/18 , H01J2237/335
Abstract: Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.
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3.发明申请公开(公告)号：US20170330738A1
公开(公告)日：2017-11-16
申请号：US15592426
申请日：2017-05-11
Applicant: Veeco Instruments Inc.
Inventor： Boris Druz , Rustam Yevtukhov , Rhodri Elliott , James M. Best, JR. , Peter Porshnev
IPC: H01J37/36 , G01R19/165 , H01J37/30
CPC classification number: H01J37/36 , G01R19/16533 , H01J37/3007 , H01J37/3178 , H01J37/32018 , H01J37/32944 , H01J2237/18 , H01J2237/335
Abstract: Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.
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公开(公告)号：US10128083B2
公开(公告)日：2018-11-13
申请号：US15170570
申请日：2016-06-01
Applicant: Veeco Instruments Inc.
Inventor： Boris Druz , Rustam Yevtukhov , Robert Hieronymi , Alan V. Hayes , Mathew Levoso , Peter Porshnev
IPC: H01J37/08 , H01J37/305 , H01J27/18
Abstract: The presently disclosed ion sources include one or more electromagnets for changing the distribution of plasma within a discharge space of an ion source. At least one of the electromagnets is oriented about an outer periphery of a tubular sidewall of the ion source and changes a distribution of the plasma in a peripheral region of the discharge space.
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公开(公告)号：US09978934B2
公开(公告)日：2018-05-22
申请号：US14927604
申请日：2015-10-30
Applicant: Veeco Instruments, Inc.
Inventor： Ajit Paranjpe , Boris Druz , Katrina Rook , Narasimhan Srinivasan
Abstract: This disclosure provides various methods for improved etching of spin-transfer torque random access memory (STT-RAM) structures. In one example, the method includes (1) ion beam etch of the stack just past the MTJ at near normal incidence, (2) a short clean-up etch at a larger angle in a windowed mode to remove any redeposited material along the sidewall that extends from just below the MTJ to just above the MTJ, (3) deposition of an encapsulant with controlled step coverage to revert to a vertical or slightly re-entrant profile from the tapered profile generated by the etch steps, (4) ion beam etch of the remainder of the stack at near normal incidence while preserving the encapsulation along the sidewall of the MTJ, (5) clean-up etch at a larger angle and windowed mode to remove redeposited materials from the sidewalls, and (6) encapsulation of the etched stack.
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公开(公告)号：US20170125668A1
公开(公告)日：2017-05-04
申请号：US14927604
申请日：2015-10-30
Applicant: Veeco Instruments, Inc.
Inventor： Ajit Paranjpe , Boris Druz , Katrina Rook , Narasimhan Srinivasan
IPC: H01L43/12
Abstract: This disclosure provides various methods for improved etching of spin-transfer torque random access memory (STT-RAM) structures. In one example, the method includes (1) ion beam etch of the stack just past the MTJ at near normal incidence, (2) a short clean-up etch at a larger angle in a windowed mode to remove any redeposited material along the sidewall that extends from just below the MTJ to just above the MTJ, (3) deposition of an encapsulant with controlled step coverage to revert to a vertical or slightly re-entrant profile from the tapered profile generated by the etch steps, (4) ion beam etch of the remainder of the stack at near normal incidence while preserving the encapsulation along the sidewall of the MTJ, (5) clean-up etch at a larger angle and windowed mode to remove redeposited materials from the sidewalls, and (6) encapsulation of the etched stack.
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