公开(公告)号：US11725111B2

公开(公告)日：2023-08-15

申请号：US17507771

申请日：2021-10-21

Applicant: VERSUM MATERIALS US, LLC

Inventor： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki ,  Bing Han ,  Mark Leonard O'Neill

IPC: C23C16/30 ,  C09D7/63 ,  C07F7/08 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C09D5/00 ,  C07F7/10 ,  H01L21/02

CPC classification number: C09D7/63 ,  C07F7/0896 ,  C07F7/10 ,  C09D5/00 ,  C23C16/30 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02211

Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R8N(SiR9LH)2, wherein R8, R9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

公开(公告)号：US11152206B2

公开(公告)日：2021-10-19

申请号：US16748914

申请日：2020-01-22

Applicant: Versum Materials US, LLC

Inventor： Haripin Chandra ,  Xinjian Lei ,  Anupama Mallikarjunan ,  Moo-Sung Kim

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/30

Abstract: A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (

公开(公告)号：US10991571B2

公开(公告)日：2021-04-27

申请号：US16255464

申请日：2019-01-23

Applicant: Versum Materials US, LLC

Inventor： Haripin Chandra ,  Meiliang Wang ,  Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Mark Leonard O'Neill

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C07F7/10

Abstract: Atomic layer deposition (ALD) process formation of silicon oxide with temperature>500° C. is disclosed.

公开(公告)号：US20250101586A1

公开(公告)日：2025-03-27

申请号：US18833817

申请日：2023-01-25

Applicant: Versum Materials US, LLC

Inventor： Manchao Xiao ,  Haripin Chandra ,  Xinjian Lei ,  Matthew R. MacDonald ,  Mahsa Konh ,  Pegah Bagheri

IPC: C23C16/455 ,  C07F7/21 ,  C23C16/34 ,  C23C16/44

Abstract: Halide-functionalized cyclotrisilazane precursor compounds according to Formulae A and B, and methods using the same, for depositing a silicon-containing film such as silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, or carbon-doped silicon oxide via a thermal atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) process, and combinations thereof.

公开(公告)号：US11649547B2

公开(公告)日：2023-05-16

申请号：US16781799

申请日：2020-02-04

Applicant: Versum Materials US, LLC

Inventor： Meiliang Wang ,  Xinjian Lei ,  Haripin Chandra ,  Matthew R. MacDonald

IPC: C23C16/455 ,  C23C16/40 ,  C07F7/10 ,  C07F7/21

CPC classification number: C23C16/45553 ,  C07F7/10 ,  C07F7/21 ,  C23C16/401

Abstract: A method for depositing a film comprising silicon and oxygen onto a substrate includes (a) providing a substrate in a reactor; (b) introducing into the reactor at least one silicon precursor compound selected from the group consisting of Formulae A, B, and C as described herein, (c) purging the reactor with a purge gas; (d) introducing at least one of an oxygen-containing source and a nitrogen-containing source into the reactor; and (e) purging the reactor with the purge gas, wherein the steps b through e are repeated until a desired thickness of resulting silicon-containing film is deposited; and (f) treating the resulting silicon-containing film with R3xSi(NR1R2)4-x wherein R1-3 are the same as aforementioned, preferably methyl or ethyl; and x=1, 2, or 3; and wherein the method is conducted at one or more temperatures ranging from about 20° C. to 300° C.

公开(公告)号：US10985010B2

公开(公告)日：2021-04-20

申请号：US16553091

申请日：2019-08-27

Applicant: Versum Materials US, LLC

Inventor： Haripin Chandra ,  Xinjian Lei ,  Moo-Sung Kim

IPC: H01L21/02 ,  H01L21/3105

Abstract: A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a high quality silicon nitride or carbon doped silicon nitride.

公开(公告)号：US10145008B2

公开(公告)日：2018-12-04

申请号：US15548884

申请日：2016-02-04

Applicant: VERSUM MATERIALS US, LLC

Inventor： Haripin Chandra ,  Kirk Scott Cuthill ,  Anupama Mallikarjunan ,  Xinjian Lei ,  Matthew R. MacDonald ,  Manchao Xiao ,  Madhukar Bhaskara Rao ,  Jianheng Li

IPC: C23C16/40 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  C23C16/36

Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as, without limitation, a carbon doped silicon oxide film, a carbon doped silicon nitride, a carbon doped silicon oxynitride film in a deposition process. In one aspect, the composition comprises at least cyclic carbosilane having at least one Si—C—Si linkage and at least one anchoring group selected from a halide atom, an amino group, and combinations thereof.

公开(公告)号：US20180033614A1

公开(公告)日：2018-02-01

申请号：US15654426

申请日：2017-07-19

Applicant: Versum Materials US, LLC

Inventor： Haripin Chandra ,  Xinjian Lei ,  Anupama Mallikarjunan ,  Moo-Sung Kim

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/455 ,  C23C16/34

CPC classification number: H01L21/02208 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45525 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234

Abstract: A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (

公开(公告)号：US10460929B2

公开(公告)日：2019-10-29

申请号：US15479893

申请日：2017-04-05

Applicant: Versum Materials US, LLC

Inventor： Mark Leonard O'Neill ,  Manchao Xiao ,  Xinjian Lei ,  Richard Ho ,  Haripin Chandra ,  Matthew R. MacDonald ,  Meiliang Wang

IPC: H01L21/02 ,  C07F7/10 ,  C23C16/24 ,  C23C16/455 ,  C09D5/24

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

公开(公告)号：US20190287798A1

公开(公告)日：2019-09-19

申请号：US16398209

申请日：2019-04-29

Applicant: Versum Materials US, LLC

Inventor： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki ,  Bing Han ,  Mark Leonard O'Neill

IPC: H01L21/02 ,  C09D7/63 ,  C07F7/10 ,  C07F7/08 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  C23C16/30 ,  C09D5/00

Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R8N(SiR9LH)2, wherein R8, R9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).