公开(公告)号：US11725111B2

公开(公告)日：2023-08-15

申请号：US17507771

申请日：2021-10-21

Applicant: VERSUM MATERIALS US, LLC

Inventor： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki ,  Bing Han ,  Mark Leonard O'Neill

IPC: C23C16/30 ,  C09D7/63 ,  C07F7/08 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C09D5/00 ,  C07F7/10 ,  H01L21/02

CPC classification number: C09D7/63 ,  C07F7/0896 ,  C07F7/10 ,  C09D5/00 ,  C23C16/30 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02211

Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R8N(SiR9LH)2, wherein R8, R9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

公开(公告)号：US20190304775A1

公开(公告)日：2019-10-03

申请号：US16430882

申请日：2019-06-04

Applicant: Versum Materials US, LLC

Inventor： Jianheng Li ,  Robert G. Ridgeway ,  Xinjian Lei ,  Raymond N. Vrtis ,  Bing Han ,  Madhukar Rao

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/34 ,  H01L27/11582 ,  H01L27/11517 ,  H01L27/11556 ,  C01B21/087 ,  C07F7/10 ,  H01L27/11563

Abstract: Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.

公开(公告)号：US10985013B2

公开(公告)日：2021-04-20

申请号：US16430882

申请日：2019-06-04

Applicant: Versum Materials US, LLC

Inventor： Jianheng Li ,  Robert G. Ridgeway ,  Xinjian Lei ,  Raymond N. Vrtis ,  Bing Han ,  Madhukar B. Rao

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C01B21/087 ,  C07F7/10 ,  H01L27/11517 ,  H01L27/11556 ,  H01L27/11563 ,  H01L27/11582

Abstract: Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.

公开(公告)号：US20190287798A1

公开(公告)日：2019-09-19

申请号：US16398209

申请日：2019-04-29

Applicant: Versum Materials US, LLC

Inventor： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki ,  Bing Han ,  Mark Leonard O'Neill

IPC: H01L21/02 ,  C09D7/63 ,  C07F7/10 ,  C07F7/08 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  C23C16/30 ,  C09D5/00

Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R8N(SiR9LH)2, wherein R8, R9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

公开(公告)号：US10283350B2

公开(公告)日：2019-05-07

申请号：US15976028

申请日：2018-05-10

Applicant: VERSUM MATERIALS US, LLC

Inventor： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Bing Han ,  Mark Leonard O'Neill ,  Steven Gerard Mayorga ,  Anupama Mallikarjunan

IPC: C07F7/10 ,  H01L21/02 ,  C09D1/00 ,  C07F7/02 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  C09D7/20 ,  C01B33/021 ,  C01B33/12 ,  C23C16/34 ,  C01B21/068 ,  C01B21/082

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：US11626279B2

公开(公告)日：2023-04-11

申请号：US14383690

申请日：2013-03-08

Applicant: VERSUM MATERIALS US, LLC

Inventor： Anupama Mallikarjunan ,  Andrew David Johnson ,  Meiliang Wang ,  Raymond Nicholas Vrtis ,  Bing Han ,  Xinjian Lei ,  Mark Leonard O'Neill

IPC: H01L21/02 ,  H01L29/786 ,  C23C16/505 ,  C23C16/40 ,  H01L29/49 ,  H01L29/51 ,  H01L21/443

Abstract: Described herein are low temperature processed high quality silicon containing films. Also disclosed are methods of forming silicon containing films at low temperatures. In one aspect, there are provided silicon-containing film having a thickness of about 2 nm to about 200 nm and a density of about 2.2 g/cm3 or greater wherein the silicon-containing thin film is deposited by a deposition process selected from a group consisting of chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), cyclic chemical vapor deposition (CCVD), plasma enhanced cyclic chemical vapor deposition (PECCVD, atomic layer deposition (ALD), and plasma enhanced atomic layer deposition (PEALD), and the vapor deposition is conducted at one or more temperatures ranging from about 25° C. to about 400° C. using an alkylsilane precursor selected from the group consisting of diethylsilane, triethylsilane, and combinations thereof.

公开(公告)号：US20170207082A1

公开(公告)日：2017-07-20

申请号：US15404376

申请日：2017-01-12

Applicant: Versum Materials US, LLC

Inventor： Meiliang Wang ,  Xinjian Lei ,  Anupama Mallikarjunan ,  Haripin Chandra ,  Bing Han

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/44 ,  C23C16/40

CPC classification number: H01L21/02164 ,  C23C16/401 ,  C23C16/4408 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/0228

Abstract: A method and composition for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 650° C. or greater is provided. In one aspect, there is provided a method to deposit a silicon oxide film or material comprising the steps of: providing a substrate in a reactor; introducing into the reactor at least one halidosiloxane precursor selected from the group of compounds having formulae I and II described herein; purging the reactor with a purge gas; introducing an oxygen source into the reactor; and purging reactor with purge gas; and wherein the steps are repeated until a desired thickness of silicon oxide is deposited and the process is conducted at one or more temperatures ranging from about 650 to 1000° C.

公开(公告)号：US20170186605A1

公开(公告)日：2017-06-29

申请号：US15459389

申请日：2017-03-15

Applicant: VERSUM MATERIALS US, LLC

Inventor： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Bing Han ,  Mark Leonard O'Neill ,  Steven Gerard Mayorga ,  Anupama Mallikarjunan

IPC: H01L21/02 ,  C09D7/00 ,  C23C16/455 ,  C01B33/12 ,  C07F7/10 ,  C23C16/34 ,  C09D1/00 ,  C01B33/021

CPC classification number: H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：US10283348B2

公开(公告)日：2019-05-07

申请号：US15404376

申请日：2017-01-12

Applicant: Versum Materials US, LLC

Inventor： Meiliang Wang ,  Xinjian Lei ,  Anupama Mallikarjunan ,  Haripin Chandra ,  Bing Han

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46

Abstract: A method and composition for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 650° C. or greater is provided. In one aspect, there is provided a method to deposit a silicon oxide film or material comprising the steps of: providing a substrate in a reactor; introducing into the reactor at least one halidosiloxane precursor selected from the group of compounds having formulae I and II described herein; purging the reactor with a purge gas; introducing an oxygen source into the reactor; and purging reactor with purge gas; and wherein the steps are repeated until a desired thickness of silicon oxide is deposited and the process is conducted at one or more temperatures ranging from about 650 to 1000° C.

公开(公告)号：US20180294152A1

公开(公告)日：2018-10-11

申请号：US15976028

申请日：2018-05-10

Applicant: VERSUM MATERIALS US, LLC

Inventor： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Bing Han ,  Mark Leonard O'Neill ,  Steven Gerard Mayorga ,  Anupama Mallikarjunan

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  C09D7/20 ,  C07F7/10 ,  C01B33/12 ,  C01B33/021 ,  C09D1/00

CPC classification number: H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.