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公开(公告)号：US11742200B2
公开(公告)日：2023-08-29
申请号：US17501903
申请日：2021-10-14
CPC分类号： H01L21/02208 , C23C16/308 , C23C16/345 , C23C16/402 , C23C16/45525 , C23C16/45553 , C23C16/56 , H01L21/0217 , H01L21/0228 , H01L21/0234 , H01L21/02118 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02326 , H01L21/02337
摘要： A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (
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2.发明授权公开(公告)号：US11732351B2
公开(公告)日：2023-08-22
申请号：US17458183
申请日：2021-08-26
发明人： Xinjian Lei , Moo-Sung Kim , Jianheng Li
IPC分类号： C23C16/34 , C23C16/36 , C23C16/455 , C23C16/30 , H01L21/02
CPC分类号： C23C16/345 , C23C16/303 , C23C16/36 , C23C16/45531 , C23C16/45542 , C23C16/45553 , H01L21/0217 , H01L21/02167 , H01L21/02211 , H01L21/02222 , H01L21/02274
摘要： Described herein are conformal films and methods for forming a conformal metal or metalloid doped silicon nitride dielectric film wherein the conformal metal is zirconium, hafnium, titanium, tantalum, or tungsten. A method includes providing a substrate in a reactor; introducing into the reactor an at least one metal precursor which reacts; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated; and optionally purge the reactor with an inert gas; and the steps are repeated until a desired thickness of the conformal metal nitride film is obtained.
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3.发明授权公开(公告)号：US11605535B2
公开(公告)日：2023-03-14
申请号：US16945206
申请日：2020-07-31
发明人： Xinjian Lei , Moo-Sung Kim
摘要： Described herein are boron-containing precursor compounds, and compositions and methods comprising same, for forming boron-containing films. In one aspect, the film is deposited from at least one precursor having the following Formula I or II described herein.
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公开(公告)号：US11081337B2
公开(公告)日：2021-08-03
申请号：US15914968
申请日：2018-03-07
发明人： Xinjian Lei , Matthew R MacDonald , Moo-Sung Kim , Se-Won Lee
IPC分类号： H01L21/02 , C23C16/40 , C23C16/455 , C23C16/50 , C09D5/24 , C09D1/00 , H01L49/02 , H01L27/11507 , C09D7/40
摘要： In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.
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5.发明授权公开(公告)号：US10290540B2
公开(公告)日：2019-05-14
申请号：US15843080
申请日：2017-12-15
IPC分类号： C23C16/16 , H01L21/768 , H01L23/532 , H01L21/285 , H01L21/02 , C23C16/455
摘要： Described herein are cobalt compounds, processes for making cobalt compounds, cobalt compounds used as precursors for depositing cobalt-containing films (e.g., cobalt, cobalt oxide, cobalt nitride, cobalt silicide etc.); and cobalt films. Examples of cobalt precursor compounds are (disubstituted alkyne) dicobalt hexacarbonyl compounds. Examples of surfaces for deposition of metal-containing films include, but are not limited to, metals, metal oxides, metal nitrides, and metal silicides. Disubstituted alkyne ligands with alkyl groups such as linear alkyls and branched alkyls to form cobalt complexes which are used for selective deposition on certain surfaces and/or superior film properties such as uniformity, continuity, and low resistance.
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公开(公告)号：US11631580B2
公开(公告)日：2023-04-18
申请号：US17375996
申请日：2021-07-14
发明人： Xinjian Lei , Matthew R. MacDonald , Moo-Sung Kim , Se-Won Lee
IPC分类号： H01L21/02 , C23C16/40 , C23C16/455 , C23C16/50 , C09D5/24 , C09D1/00 , H01L49/02 , H01L27/11507 , C09D7/40
摘要： In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.
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公开(公告)号：US11152206B2
公开(公告)日：2021-10-19
申请号：US16748914
申请日：2020-01-22
摘要： A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (
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8.发明授权公开(公告)号：US11104990B2
公开(公告)日：2021-08-31
申请号：US15757805
申请日：2016-09-09
发明人： Xinjian Lei , Moo-Sung Kim , Jianheng Li
IPC分类号： C23C16/34 , C23C16/36 , C23C16/455 , C23C16/30 , H01L21/02
摘要： Described herein are conformal films and methods for forming a conformal Group 4, 5, 6, 13 metal or metalloid doped silicon nitride dielectric film. In one aspect, there is provided a method of forming an aluminum silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one metal precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.
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公开(公告)号：US11035039B2
公开(公告)日：2021-06-15
申请号：US15745275
申请日：2016-07-28
发明人： Xinjian Lei , Moo-Sung Kim , Manchao Xiao
IPC分类号： C23C16/455 , C23C16/34 , H01L21/02
摘要： Described herein are compositions, silicon nitride films and methods for forming silicon nitride films using at least on cyclodisilazane precursor. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one cyclodisilazane comprising a hydrocarbon leaving group and two Si—H groups wherein the at least one cyclodisilazane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2.
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公开(公告)号：US20180269057A1
公开(公告)日：2018-09-20
申请号：US15914968
申请日：2018-03-07
发明人： Xinjian Lei , Matthew R. MacDonald , Moo-Sung Kim , Se-Won Lee
CPC分类号： H01L21/02148 , C09D1/00 , C09D5/24 , C09D7/40 , C23C16/401 , C23C16/405 , C23C16/45529 , C23C16/45531 , C23C16/45536 , C23C16/45553 , C23C16/50 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L27/11507 , H01L28/40
摘要： In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.
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