公开(公告)号：US06303447B1

公开(公告)日：2001-10-16

申请号：US09502036

申请日：2000-02-11

申请人： Vijai Komar Chhagan ,  Yelehanka Ramachandramurthy Pradeep ,  Mei Sheng Zhou ,  Henry Gerung ,  Simon Chooi

发明人： Vijai Komar Chhagan ,  Yelehanka Ramachandramurthy Pradeep ,  Mei Sheng Zhou ,  Henry Gerung ,  Simon Chooi

IPC分类号： H01L21336

CPC分类号： H01L29/66545 ,  H01L21/28044 ,  H01L21/28114 ,  H01L29/41 ,  H01L29/42376 ,  H01L29/4941

摘要： A method for forming an extended metal gate without poly wrap around effects. A semiconductor structure is provided having a gate structure thereon. The gate structure comprising a gate dielectric layer, a gate silicon layer, a doped silicon oxide layer, and a disposable gate layer stacked sequentially. Spacers are formed on the sidewalls of the gate structure. A dielectric gapfill layer is formed over the semiconductor structure and the gate structure and planarized, stopping on the disposable gate layer. A first silicon nitride layer is formed over the disposable gate layer, and a dielectric layer is formed over the first silicon nitride layer. The dielectric layer is patterned to form a trench over the gate structure; wherein the trench has a width greater than the width of the gate structure. The first silicon nitride layer in the bottom of the trench and the disposable gate layer are removed using one or more selective etching processes. The doped silicon oxide layer is removed using an etch with a high selectivity of doped silicon oxide to undoped silicon oxide. A barrier layer is formed over the gate silicon layer, and a metal gate layer is formed on the barrier layer; whereby the metal gate layer has a greater width than the gate structure.

摘要翻译： 一种用于形成不具有聚环绕效应的延伸金属栅极的方法。 提供其上具有栅极结构的半导体结构。 栅极结构包括依次堆叠的栅极介电层，栅极硅层，掺杂氧化硅层和一次性栅极层。 隔板形成在栅极结构的侧壁上。 在半导体结构和栅极结构之上形成电介质间隙填充层，并在一次性栅极层上停止平坦化。 在一次性栅极层上形成第一氮化硅层，并且在第一氮化硅层上形成电介质层。 图案化电介质层以在栅极结构上形成沟槽; 其中所述沟槽的宽度大于所述栅极结构的宽度。 使用一个或多个选择性蚀刻工艺去除沟槽底部中的第一氮化硅层和一次性栅极层。 使用掺杂的氧化硅对未掺杂的氧化硅具有高选择性的蚀刻来去除掺杂的氧化硅层。 在栅极硅层上形成阻挡层，在阻挡层上形成金属栅极层; 由此金属栅极层具有比栅极结构更大的宽度。

公开(公告)号：US06387765B2

公开(公告)日：2002-05-14

申请号：US09946982

申请日：2001-09-06

申请人： Vijai Kumar Chhagan ,  Yelehanka Ramachandramurthy Pradeep ,  Mei Sheng Zhou ,  Henry Gerung ,  Simon Chooi

发明人： Vijai Kumar Chhagan ,  Yelehanka Ramachandramurthy Pradeep ,  Mei Sheng Zhou ,  Henry Gerung ,  Simon Chooi

IPC分类号： H01L21336

CPC分类号： H01L29/66545 ,  H01L21/28044 ,  H01L21/28114 ,  H01L29/41 ,  H01L29/42376 ,  H01L29/4941

摘要： A method for forming an extended metal gate without poly wrap around effects. A semiconductor structure is provided having a gate structure thereon. The gate structure comprising a gate dielectric layer, a gate silicon layer, a doped silicon oxide layer, and a disposable gate layer stacked sequentially. Spacers are formed on the sidewalls of the gate structure. A dielectric gapfill layer is formed over the semiconductor structure and the gate structure and planarized, stopping on the disposable gate layer. A first silicon nitride layer is formed over the disposable gate layer, and a dielectric layer is formed over the first silicon nitride layer. The dielectric layer is patterned to form a trench over the gate structure; therein the trench has a width greater than the width of the gate structure. The first silicon nitride layer in the bottom of the trench and the disposable gate layer are removed using one or more selective etching processes. The doped silicon oxide layer is removed using an etch with a high selectivity of doped silicon oxide to undoped silicon oxide. A barrier layer is formed over the gate silicon layer, and a metal gate layer is formed on the barrier layer; whereby the metal gate layer has a greater width than the gate structure.

摘要翻译： 一种用于形成不具有聚环绕效应的延伸金属栅极的方法。 提供其上具有栅极结构的半导体结构。 栅极结构包括依次堆叠的栅极介电层，栅极硅层，掺杂氧化硅层和一次性栅极层。 隔板形成在栅极结构的侧壁上。 在半导体结构和栅极结构之上形成电介质间隙填充层，并在一次性栅极层上停止平坦化。 在一次性栅极层上形成第一氮化硅层，并且在第一氮化硅层上形成电介质层。 图案化电介质层以在栅极结构上形成沟槽; 其中沟槽的宽度大于栅极结构的宽度。 使用一个或多个选择性蚀刻工艺去除沟槽底部中的第一氮化硅层和一次性栅极层。 使用掺杂的氧化硅对未掺杂的氧化硅具有高选择性的蚀刻来去除掺杂的氧化硅层。 在栅极硅层上形成阻挡层，在阻挡层上形成金属栅极层; 由此金属栅极层具有比栅极结构更大的宽度。

公开(公告)号：US06346468B1

公开(公告)日：2002-02-12

申请号：US09502037

申请日：2000-02-11

申请人： Yelehanka Ramachandramurthy Pradeep ,  Subhash Gupta ,  Vijai Komar Chhagan

发明人： Yelehanka Ramachandramurthy Pradeep ,  Subhash Gupta ,  Vijai Komar Chhagan

IPC分类号： H01L213205

CPC分类号： H01L29/6653 ,  H01L21/32137 ,  H01L29/6659

摘要： A method for forming an L-shaped spacer using disposable polysilicon top spacers. A semiconductor structure is provided having a gate structure thereon. A liner oxide layer is formed on the gate structure. A dielectric spacer layer is formed on the liner oxide layer. A disposable polysilicon top spacer layer is formed on the dielectric spacer layer. The disposable polysilicon top spacer layer is anisotropically etched to form disposable polysilicon top spacers. The dielectric spacer layer is etched to form L-shaped dielectric spacers, using the disposable polysilicon top spacers as an etch mask. The disposable polysilicon top spacers are removed leaving an L-shaped dielectric spacer. In one embodiment, lightly doped source and drain regions are formed prior to forming the liner oxide layer and the L-shaped spacers.

摘要翻译： 一种使用一次性多晶硅顶部间隔物形成L形间隔件的方法。 提供其上具有栅极结构的半导体结构。 在栅极结构上形成衬里氧化物层。 介电间隔层形成在衬垫氧化物层上。 一次性多晶硅顶部间隔层形成在电介质间隔层上。 一次性多晶硅顶部间隔层被各向异性蚀刻以形成一次性多晶硅顶部间隔物。 使用一次性多晶硅顶部间隔物作为蚀刻掩模，蚀刻电介质间隔层以形成L形电介质间隔物。 去除一次性多晶硅顶部间隔物，留下L形介电间隔物。 在一个实施例中，在形成衬垫氧化物层和L形间隔物之前形成轻掺杂的源极和漏极区。

公开(公告)号：US5858847A

公开(公告)日：1999-01-12

申请号：US827239

申请日：1997-03-28

申请人： Mei Sheng Zhou ,  Yelehanka Ramachandramurthy Pradeep ,  Dajiang Xu

发明人： Mei Sheng Zhou ,  Yelehanka Ramachandramurthy Pradeep ,  Dajiang Xu

IPC分类号： H01L21/033 ,  H01L21/266 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/47

CPC分类号： H01L29/6659 ,  H01L21/0331 ,  H01L21/266 ,  H01L21/8238

摘要： The present invention provides a method of manufacturing a lightly doped drain (LDD) structure using a polymer layer to define the LDD. The polymer layer is formed in an etch step which defines the gate electrode. The method begins by forming spaced field oxide regions 12 in a substrate 10. Next, a gate oxide layer 14, and a material layer 18 and a hard mask layer 22 are sequentially formed over the active area and the field oxide regions 12. A photo resist block 24 is formed over the hard mask layer 22 over the active area. The hard mask layer 22 is etched using the photo resist block 24 as a mask forming a hard mask block 22. The etch simultaneously forms a polymer layer 26 over the a top and sidewalls of the photo resist block 24 and over the sidewalls of the hard mask block. Impurities ions are implanted into the substrate in the active area using the polymer layer 26 as a mask forming highly doped drain regions 30 in the substrate 10. Next, the photo resist block 24 and the polymer layer 26 are removed. The hard mask is used as an etch barrier to etch the gate material to form a gate electrode 19 between the lightly doped drains. Subsequently, impurities ions are implanted into the substrate in the active area using the hard mask block 23 as a mask forming lightly doped drain regions 34 in the substrate 10.

摘要翻译： 本发明提供一种使用聚合物层制造用于限定LDD的轻掺杂漏极（LDD）结构的方法。 聚合物层在限定栅电极的蚀刻步骤中形成。 该方法通过在衬底10中形成间隔的场氧化物区域12开始。接下来，栅极氧化物层14以及材料层18和硬掩模层22依次形成在有源区域和场氧化物区域12上。照片 抗蚀剂块24形成在有源区域上方的硬掩模层22上。 使用光致抗蚀剂块24作为形成硬掩模块22的掩模来蚀刻硬掩模层22.蚀刻同时在光致抗蚀剂块24的顶部和侧壁上以及硬质掩模22的侧壁之上形成聚合物层26。 掩模块。 使用聚合物层26作为在衬底10中形成高度掺杂的漏极区域30的掩模将杂质离子注入到有源区域中的衬底中。接下来，除去光致抗蚀剂块24和聚合物层26。 硬掩模用作蚀刻栅极以蚀刻栅极材料以在轻掺杂漏极之间形成栅电极19。 随后，使用硬掩模块23作为形成衬底10中的轻掺杂漏区34的掩模，在有源区中将杂质离子注入到衬底中。

公开(公告)号：US06228713B1

公开(公告)日：2001-05-08

申请号：US09342035

申请日：1999-06-28

申请人： Yelehanka Ramachandramurthy Pradeep ,  Vijay Kumar Chhagan ,  Jie Yu ,  Mei Sheng Zhou

发明人： Yelehanka Ramachandramurthy Pradeep ,  Vijay Kumar Chhagan ,  Jie Yu ,  Mei Sheng Zhou

IPC分类号： H01H21336

CPC分类号： H01L27/11521 ,  H01L21/76224

摘要： A method to make a self-aligned floating gate in a memory device. The method patterns the floating gate (FG) using the trench etch for the shallow trench isolation (STI). Because the floating gate (FG) is adjacent to the raised STI, sharp corners are eliminated between the FG and CG thereby increasing the effectiveness of the intergate dielectric layer. The method includes: forming an first dielectric layer (gate oxide) and a polysilicon layer over a substrate, etching through the first dielectric oxide layer and the polysilicon layer and into the substrate to form a trench. The remaining first dielectric layer and polysilicon layer function as a tunnel dielectric layer and a floating gate. The trench is filled with an isolation layer. The masking layer is removed. An intergate dielectric layer and a control gate are formed over the floating gate and the isolation layer.

摘要翻译： 一种在存储器件中制作自对准浮动栅极的方法。 该方法使用用于浅沟槽隔离（STI）的沟槽蚀刻对浮栅（FG）进行图案化。 因为浮动栅极（FG）与凸起的STI相邻，所以在FG和CG之间消除了尖角，从而增加了栅间电介质层的有效性。 该方法包括：在衬底上形成第一介质层（栅极氧化物）和多晶硅层，蚀刻通过第一电介质氧化物层和多晶硅层并进入衬底以形成沟槽。 剩余的第一电介质层和多晶硅层用作隧道电介质层和浮栅。 沟槽填充有隔离层。 去除掩模层。 在浮栅和隔离层上形成隔间电介质层和控制栅极。

公开(公告)号：US6156598A

公开(公告)日：2000-12-05

申请号：US460113

申请日：1999-12-13

申请人： Mei Sheng Zhou ,  Yelehanka Ramachandramurthy Pradeep ,  Jie Yu ,  Ying Keung Leung

发明人： Mei Sheng Zhou ,  Yelehanka Ramachandramurthy Pradeep ,  Jie Yu ,  Ying Keung Leung

IPC分类号： H01L21/265 ,  H01L21/311 ,  H01L21/336 ,  H01L21/8238

CPC分类号： H01L29/66598 ,  H01L21/2652 ,  H01L21/31144 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/6659

摘要： A method for forming an L-shaped spacer using a sacrificial organic top coating, then using the L-shaped spacer to simultaneously implant lightly doped source and drain extensions through the L-shaped spacer while implanting source and drain regions beyond the L-shaped spacer. A semiconductor structure is provided having a gate structure thereon. A liner oxide layer is formed on the gate structure. A dielectric spacer layer is formed on the liner oxide layer. In the preferred embodiments, the dielectric spacer layer comprises a silicon nitride layer or a silicon oxynitride layer. A sacrificial organic layer is formed on the dielectric spacer layer. The sacrificial organic layer and the dielectric spacer layer are anisotropically etched to form spacers comprising a triangle-shaped sacrificial organic structure and an L-shaped dielectric spacer. The triangle-shaped sacrificial organic structure is removed leaving an L-shaped dielectric spacer. Impurity ions are implanted into the surface of the semiconductor structure forming lightly doped source and drain extensions where the ions are implanted through the L-shaped spacer, and forming source and drain regions beyond the L-shaped spacer where the ions are implanted without passing through the L-shaped spacer.

摘要翻译： 使用牺牲有机顶涂层形成L形间隔物的方法，然后使用L形间隔物同时将轻掺杂的源极和漏极延伸部注入L型间隔物，同时将源极和漏极区域注入超过L形间隔物 。 提供其上具有栅极结构的半导体结构。 在栅极结构上形成衬里氧化物层。 介电间隔层形成在衬垫氧化物层上。 在优选实施例中，电介质间隔层包括氮化硅层或氮氧化硅层。 在电介质间隔层上形成牺牲有机层。 牺牲有机层和电介质间隔层被各向异性蚀刻以形成包括三角形牺牲有机结构和L形介电间隔物的间隔物。 去除三角形牺牲有机结构留下L形介电隔离物。 将杂质离子注入到形成轻掺杂源极和漏极延伸部分的半导体结构的表面中，其中离子通过L形间隔物注入，并且形成超过L形间隔物的源极和漏极区域，其中离子被注入而不通过 L形间隔物。

公开(公告)号：US5866448A

公开(公告)日：1999-02-02

申请号：US902757

申请日：1997-07-30

申请人： Yelehanka Ramachandramurthy Pradeep ,  Tang Kok Hiang ,  Mei Sheng Zhou

发明人： Yelehanka Ramachandramurthy Pradeep ,  Tang Kok Hiang ,  Mei Sheng Zhou

IPC分类号： H01L21/336 ,  H01L21/8238

CPC分类号： H01L29/6659 ,  H01L21/823814 ,  Y10S438/963

摘要： A method for fabrication of a lightly-doped-drain (LDD) structure for self aligned polysilicon gate MOSFETs is described wherein a polymer layer, formed along the sidewall during the patterning process of the polysilicon gate electrode, is used to mask the source/drain ion implant. The sidewall polymer layer replaces the conventional silicon oxide sidewall as an LDD spacer and offers improved thickness control as well as an improved sequence of processing steps whereby the deposition of a spacer oxide layer onto the gate oxide is eliminated. A cap oxide layer first deposited over the gate polysilicon layer. This oxide layer is then patterned and etched using RIE under conditions which form a polymer sidewall layer along the edges of the cap oxide pattern. The polysilicon layer is then etched, and has a pattern concentric with the cap oxide pattern but wider by the thickness of the polymer sidewall. After removal of the polymer and residual photoresist, the source/drain implant is performed, followed by removal of the polysilicon lip by RIE using the cap oxide as a mask. The LDD implant is then performed.

摘要翻译： 描述了一种制造用于自对准多晶硅栅极MOSFET的轻掺杂漏极（LDD）结构的方法，其中在多晶硅栅电极的图案化工艺期间沿侧壁形成的聚合物层用于掩蔽源/漏 离子植入。 侧壁聚合物层代替常规的氧化硅侧壁作为LDD间隔物，并提供改进的厚度控制以及改进的处理步骤顺序，从而消除间隔氧化物层沉积到栅极氧化物上。 首先沉积在栅极多晶硅层上的覆盖氧化物层。 然后使用RIE在沿着氧化物图案的边缘形成聚合物侧壁层的条件下对该氧化物层进行构图和蚀刻。 然后蚀刻多晶硅层，并且具有与盖氧化物图案同心的图案，但是通过聚合物侧壁的厚度更宽。 在去除聚合物和残余光致抗蚀剂之后，进行源极/漏极注入，随后通过RIE使用帽氧化物作为掩模去除多晶硅唇缘。 然后执行LDD植入。

公开(公告)号：US06211008B1

公开(公告)日：2001-04-03

申请号：US09528241

申请日：2000-03-17

申请人： Jie Yu ,  Yelehanka Ramachandramurthy Pradeep ,  Henry Gerung ,  Jun Qian

发明人： Jie Yu ,  Yelehanka Ramachandramurthy Pradeep ,  Henry Gerung ,  Jun Qian

IPC分类号： H01L218242

CPC分类号： H01L28/91

摘要： A method for fabricating a high-density high-capacity capacitor is described. A dielectric layer is provided overlying a semiconductor substrate. A sacrificial layer is deposited overlying the dielectric layer and patterned to form a pattern having a large surface area within a small area on the substrate. In one alternative, spacers are formed on sidewalls of the patterned sacrificial layer. Thereafter, the sacrificial layer is removed. A bottom capacitor plate layer is conformally deposited overlying the spacers. In a second alternative, a bottom capacitor plate layer is deposited overlying the patterned sacrificial layer and etched to leave spacers on sidewalls of the patterned sacrificial layer. Thereafter, the sacrificial layer is removed. In both alternatives, a capacitor dielectric layer is deposited overlying the bottom capacitor plate layer. A top capacitor plate layer is deposited overlying the capacitor dielectric layer and patterned to complete fabrication of a high-density high-capacity capacitor.

摘要翻译： 对高密度大容量电容器的制造方法进行说明。 提供覆盖在半导体衬底上的电介质层。 牺牲层沉积在电介质层上并被图案化以形成在衬底上的小区域内具有大表面积的图案。 在一个替代方案中，间隔物形成在图案化牺牲层的侧壁上。 此后，除去牺牲层。 底部电容器平板层被共形地沉积在隔离物上。 在第二替代方案中，沉积底部电容器板层，覆盖图案化的牺牲层并被蚀刻以在图案化牺牲层的侧壁上留下间隔物。 此后，除去牺牲层。 在两种替代方案中，电容器电介质层沉积在底部电容器板层上。 沉积在电容器电介质层上的顶部电容器平板层被图案化以完成高密度大容量电容器的制造。

公开(公告)号：US06281093B1

公开(公告)日：2001-08-28

申请号：US09619016

申请日：2000-07-19

申请人： Yelehanka Ramachandramurthy Pradeep ,  Qinghua Zhong ,  Zheng Zou ,  Henry Gerung

发明人： Yelehanka Ramachandramurthy Pradeep ,  Qinghua Zhong ,  Zheng Zou ,  Henry Gerung

IPC分类号： H01L2176

CPC分类号： H01L21/76237 ,  H01L21/76224

摘要： A new method of fabricating shallow trench isolations has been achieved. A silicon dioxide layer is formed overlying a semiconductor substrate. A silicon nitride layer is deposited overlying the silicon dioxide layer. The silicon nitride layer is patterned to expose the semiconductor substrate where shallow trench isolations are planned. Ions are implanted into the exposed semiconductor substrate. The implanting damages any passive surface materials overlying the semiconductor substrate. The exposed semiconductor substrate is etched down to form trenches. The damaged passive surface materials are removed during the etching down to thereby prevent trench cone formation. A trench filling layer is deposited to fill the trenches. The trench filling layer is polished down to complete the shallow trench isolations in the manufacture of the integrated circuit device.

摘要翻译： 已经实现了制造浅沟槽隔离的新方法。 在半导体衬底上形成二氧化硅层。 沉积氮化硅层覆盖二氧化硅层。 图案化氮化硅层以暴露其中规划浅沟槽隔离的半导体衬底。 将离子注入到暴露的半导体衬底中。 植入损伤覆盖半导体衬底的任何被动表面材料。 暴露的半导体衬底被蚀刻以形成沟槽。 在蚀刻期间，损坏的被动表面材料被去除，从而防止形成沟槽。 沉积沟槽填充层以填充沟槽。 在集成电路器件的制造中，沟槽填充层被抛光以完成浅沟槽隔离。

公开(公告)号：US06228770B1

公开(公告)日：2001-05-08

申请号：US09531784

申请日：2000-03-21

申请人： Yelehanka Ramachandramurthy Pradeep ,  Vijai Kumar Chhagan ,  Henry Gerung ,  Madhusudan Mukhopadhyay

发明人： Yelehanka Ramachandramurthy Pradeep ,  Vijai Kumar Chhagan ,  Henry Gerung ,  Madhusudan Mukhopadhyay

IPC分类号： H01L2100

CPC分类号： H01L21/7682

摘要： A new method of forming metal interconnects with air gaps between adjacent interconnects in the manufacture of an integrated circuit device is achieved. A semiconductor substrate is provided. The metal interconnects are formed overlying the semiconductor substrate. A silicon nitride liner layer is deposited. A gap filling oxide layer is deposited to fill gaps between adjacent metal interconnects. The gap filling oxide layer is polished down to the silicon nitride liner layer. A silicon nitride thin layer is deposited. The silicon nitride thin layer is patterned using an oversized, reverse mask of the metal interconnects. The patterning of the silicon nitride thin layer creates openings to thereby expose a portion of the gap filling oxide. The gap filling oxide layer is etched away. A self-sealing oxide layer is deposited overlying the silicon nitride thin layer and the silicon nitride liner layer. The self-sealing oxide layer seals over the gaps between the silicon nitride thin layer and the silicon nitride liner layer to thereby form permanent air gaps between the adjacent metal interconnects, and the integrated circuit is completed.

摘要翻译： 实现了在制造集成电路器件中在相邻互连之间形成具有气隙的金属互连的新方法。 提供半导体衬底。 金属互连形成在半导体衬底上。 沉积氮化硅衬垫层。 沉积间隙填充氧化物层以填充相邻的金属互连之间的间隙。 间隙填充氧化物层被抛光到氮化硅衬垫层。 沉积氮化硅薄层。 使用金属互连的过大的反向掩模来对氮化硅薄层进行构图。 氮化硅薄层的图案化形成开口，从而暴露间隙填充氧化物的一部分。 间隙填充氧化物层被蚀刻掉。 沉积氮化硅薄层和氮化硅衬层的自密封氧化层。 自密封氧化物层在氮化硅薄层和氮化硅衬垫层之间的间隙上密封，从而在相邻的金属互连之间形成永久的气隙，并且完成集成电路。