公开(公告)号：US06586348B2

公开(公告)日：2003-07-01

申请号：US09850585

申请日：2001-05-07

申请人： Walter Hartner ,  Günther Schindler ,  Frank Hintermaier ,  Volker Weinrich

发明人： Walter Hartner ,  Günther Schindler ,  Frank Hintermaier ,  Volker Weinrich

IPC分类号： H01L2131

CPC分类号： H01L21/02197 ,  H01L21/02356 ,  H01L21/31122 ,  H01L21/31691 ,  H01L21/32136 ,  H01L28/55

摘要： After an SBT layer is precipitated onto a substrate, the SBT layer is structured as a still amorphous layer. Only subsequently is it subjected to a crystallization process. Layers produced in this manner have a relatively high degree of dielectric strength and have no stoichiometric deviations on the etched edges.

摘要翻译： 在SBT层沉积到衬底上之后，SBT层被构造为静止非晶层。 只有随后才进行结晶过程。 以这种方式生产的层具有相对高的介电强度，并且在蚀刻的边缘上不具有化学计量偏差。

公开(公告)号：US06495415B2

公开(公告)日：2002-12-17

申请号：US10027532

申请日：2001-12-26

申请人： Walter Hartner ,  Igor Kasko ,  Volker Weinrich ,  Frank Hintermaier ,  Günther Schindler ,  Hermann Wendt

发明人： Walter Hartner ,  Igor Kasko ,  Volker Weinrich ,  Frank Hintermaier ,  Günther Schindler ,  Hermann Wendt

IPC分类号： H01L218242

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L21/76838 ,  H01L27/10852 ,  H01L28/60

摘要： A method for fabricating a patterned layer from a layer material. The method includes steps of: providing a substrate with at least one target region and at least one migration region; applying a layer material; adding a material to the layer material; and performing a heat treatment such that the layer material migrates from the migration region to the target region and a layer which is self-aligned and self-patterned with respect to the target region is formed. The method has the advantage that the layer material, which can often only be etched with difficulty, does not have to be patterned directly. The desired structure of the layer is predetermined by preliminarily structuring the substrate into a target region and a migration region, and is produced by the migration of the layer material as a result of the heat treatment.

公开(公告)号：US06316802B1

公开(公告)日：2001-11-13

申请号：US09282091

申请日：1999-03-30

申请人： Günther Schindler ,  Walter Hartner ,  Frank Hintermaier ,  Carlos Mazure-Espejo ,  Rainer Bruchhaus ,  Wolfgang Hönlein ,  Manfred Engelhardt

发明人： Günther Schindler ,  Walter Hartner ,  Frank Hintermaier ,  Carlos Mazure-Espejo ,  Rainer Bruchhaus ,  Wolfgang Hönlein ,  Manfred Engelhardt

IPC分类号： H01L27108

CPC分类号： H01L27/11502

摘要： The integrated semiconductor memory configuration has a semiconductor body in which selection transistors and storage capacitors are integrated. The storage capacitors have a dielectric layer configured between two electrodes. At least the upper electrode is constructed in a layered manner with a platinum layer, that is seated on the dielectric layer, and a thicker, base metal layer lying above the platinum layer.

摘要翻译： 集成半导体存储器配置具有集成了选择晶体管和存储电容器的半导体本体。 存储电容器具有在两个电极之间配置的电介质层。 至少上电极以分层的方式构成，铂层位于电介质层上，而较厚的贱金属层位于铂层之上。

公开(公告)号：US06730562B2

公开(公告)日：2004-05-04

申请号：US10364819

申请日：2003-02-11

申请人： Manfred Engelhardt ,  Walter Hartner ,  Frank Hintermaier ,  Günther Schindler ,  Volker Weinrich

发明人： Manfred Engelhardt ,  Walter Hartner ,  Frank Hintermaier ,  Günther Schindler ,  Volker Weinrich

IPC分类号： H01L218242

CPC分类号： H01L28/55 ,  H01L21/31122

摘要： A method for structuring ferroelectric layers on semiconductor substrates retains or regenerates the adherence and breakdown voltage resistance of the ferroelectric layer, which is especially significant for producing storage capacitors in large-scale integrated FeRAM and DRAM memory components. The addition of H2O or O2 results principally in the recovery of the electrostatic breakdown strength of the ferroelectric layer, which is of importance in particular when the ferroelectric serves as a dielectric of a storage capacitor and has to withstand electric fields of 5-10×106 V/m without a significant leakage current.

摘要翻译： 用于在半导体衬底上构造铁电层的方法保留或再生强电介质层的粘附和耐击穿电压，这对于在大规模集成的FeRAM和DRAM存储器组件中产生存储电容器尤其重要。 H 2 O或O 2的添加主要导致铁电层的静电击穿强度的恢复，特别是当铁电体用作储能电容器的电介质并且必须承受5-10×10 6的电场时，这尤其重要 > V / m，没有明显的漏电流。

公开(公告)号：US06438019B2

公开(公告)日：2002-08-20

申请号：US09756085

申请日：2001-01-08

申请人： Walter Hartner ,  Günther Schindler ,  Frank Hintermaier

发明人： Walter Hartner ,  Günther Schindler ,  Frank Hintermaier

IPC分类号： G11C1102

CPC分类号： H01L27/11502

摘要： The invention relates to a ferroelectric RAM configuration, including a number of storage cells, each of which has a selection transistor and a capacitor device with a ferroelectric dielectric. The capacitor device includes at least two capacitors whose coercive voltages are different from each other.

摘要翻译： 本发明涉及一种铁电RAM配置，其包括多个存储单元，每个存储单元具有选择晶体管和具有铁电介质的电容器器件。 电容器装置包括至少两个矫顽电压彼此不同的电容器。

公开(公告)号：US06649424B2

公开(公告)日：2003-11-18

申请号：US10154340

申请日：2002-05-23

申请人： Manfred Mört ,  Walter Hartner ,  Volker Weinrich ,  Günther Schindler

发明人： Manfred Mört ,  Walter Hartner ,  Volker Weinrich ,  Günther Schindler

IPC分类号： H01L2100

CPC分类号： H01L28/55 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/02285 ,  H01L21/31691

摘要： A method of fabricating semiconductor circuits having integrated capacitors that have a dielectric or a ferroelectric material between electrodes. The materials are subjected to heat treatment at high temperatures in an oxygen atmosphere for the purpose of crystallization. The dielectric or ferroelectric is heated separately from the semiconductor substrate, is comminuted into small particles and only afterward applied in this form to the semiconductor substrate. This makes it possible to integrate substances with arbitrarily high crystallization temperature without damaging the integrated semiconductor circuit, since the semiconductor substrate itself does not have to be heated. Diffusion barriers for oxygen are unnecessary. Previous limitations on the capacitor capacitance are obviated owing to the free choice of dielectric or ferroelectric made possible, and the packing density of the capacitors is increased.

公开(公告)号：US06197633B1

公开(公告)日：2001-03-06

申请号：US09281822

申请日：1999-03-30

申请人： Günther Schindler ,  Walter Hartner ,  Carlos Mazure-Espejo

发明人： Günther Schindler ,  Walter Hartner ,  Carlos Mazure-Espejo

IPC分类号： H01L218242

CPC分类号： H01L27/10852 ,  H01L27/10817

摘要： A method for producing a memory configuration that comprises a multiplicity of memory cells, and has storage capacitors whose first electrodes are configured in plate form in a parallel manner one above the other. These electrodes are in electrical contact with selection transistors of the memory cell through contact plugs having different lengths. The first electrodes preferably extend beyond the cell area of one memory cell.

摘要翻译： 一种用于产生包括多个存储单元的存储器配置的方法，并且具有其第一电极以彼此并列的方式配置为板形的存储电容器。 这些电极通过具有不同长度的接触插塞与存储器单元的选择晶体管电接触。 优选地，第一电极延伸超过一个存储单元的单元区域。

公开(公告)号：US06852240B2

公开(公告)日：2005-02-08

申请号：US09793350

申请日：2001-02-26

申请人： Walter Hartner ,  Günther Schindler ,  Volker Weinrich ,  Igor Kasko

发明人： Walter Hartner ,  Günther Schindler ,  Volker Weinrich ,  Igor Kasko

IPC分类号： H01L27/105 ,  H01L21/02 ,  H01L21/8246 ,  H01G13/00

CPC分类号： H01L28/55 ,  H01L28/60 ,  H01L28/75

摘要： A ferroelectric capacitor configuration is configured with at least two different coercitive voltages. A first electrode structure having a surface which forms at least two levels is firstly produced. A layer of ferroelectric material of varying thickness is deposited over the first electrode by spin coating. A second electrode structure is subsequently formed on the layer of ferroelectric material.

摘要翻译： 铁电电容器配置配置有至少两个不同的强制电压。 首先产生具有形成至少两个层的表面的第一电极结构。 通过旋涂在第一电极上沉积不同厚度的铁电材料层。 随后在铁电材料层上形成第二电极结构。

公开(公告)号：US06323513B1

公开(公告)日：2001-11-27

申请号：US09449716

申请日：1999-11-24

申请人： Günther Schindler ,  Walter Hartner

发明人： Günther Schindler ,  Walter Hartner

IPC分类号： H01L27108

CPC分类号： H01L27/11502 ,  H01L21/31122 ,  H01L21/32136 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75

摘要： A semiconductor component has a capacitor and a resistor with a given resistance connected in parallel. The resistance of the resistor is lower than the resistance of the ferroelectric capacitor dielectric in order to prevent an undesired charging of the capacitor electrodes relative to one another. Methods for fabrication a semiconductor component having a capacitor and a resistor are also provided.

摘要翻译： 半导体元件具有电容器和具有并联连接的给定电阻的电阻器。 电阻器的电阻比铁电电容器电介质的电阻低，以防止电容器电极相对于彼此的不期望的充电。 还提供了制造具有电容器和电阻器的半导体部件的方法。

公开(公告)号：US07276300B2

公开(公告)日：2007-10-02

申请号：US10476579

申请日：2002-04-22

申请人： Zvonimir Gabric ,  Walter Hartner ,  Matthias Krönke ,  Günther Schindler

发明人： Zvonimir Gabric ,  Walter Hartner ,  Matthias Krönke ,  Günther Schindler

IPC分类号： B32B9/00

CPC分类号： H01L28/55 ,  H01L23/564 ,  H01L27/11502 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to a microelectronic structure which provides improved protection of a hydrogen-sensitive dielectric against hydrogen contamination. According to the invention, the hydrogen sensitive dielectric (14) is covered at lest by an intermediate oxide (18), where material thickness is at lest five times the thickness of the hydrogen-sensitive dielectric. The intermediate oxide (18) simultaneously acts as an internal dielectric and is metabolized on its surface for this purpose. The intermediate oxide (18), which has a sufficient thickness absorbers the hydrogen that may be released during the deposition of a hydrogen barrier layer (22, 26), thus protecting the hydrogen-sensitive dielectric (14).

摘要翻译： 本发明涉及一种微电子结构，其提供对氢敏感介质的改善的防止氢污染的保护。 根据本发明，氢敏电介质（14）几乎被中间氧化物（18）覆盖，其中材料厚度是氢敏电介质厚度的五倍。 中间氧化物（18）同时作为内部电介质，为此目的在其表面上代谢。 具有足够厚度的中间氧化物（18）吸收在氢阻挡层（22,26）的沉积过程中可释放的氢，从而保护感应电介质（14）。