公开(公告)号：US06586348B2

公开(公告)日：2003-07-01

申请号：US09850585

申请日：2001-05-07

申请人： Walter Hartner ,  Günther Schindler ,  Frank Hintermaier ,  Volker Weinrich

发明人： Walter Hartner ,  Günther Schindler ,  Frank Hintermaier ,  Volker Weinrich

IPC分类号： H01L2131

CPC分类号： H01L21/02197 ,  H01L21/02356 ,  H01L21/31122 ,  H01L21/31691 ,  H01L21/32136 ,  H01L28/55

摘要： After an SBT layer is precipitated onto a substrate, the SBT layer is structured as a still amorphous layer. Only subsequently is it subjected to a crystallization process. Layers produced in this manner have a relatively high degree of dielectric strength and have no stoichiometric deviations on the etched edges.

摘要翻译： 在SBT层沉积到衬底上之后，SBT层被构造为静止非晶层。 只有随后才进行结晶过程。 以这种方式生产的层具有相对高的介电强度，并且在蚀刻的边缘上不具有化学计量偏差。

公开(公告)号：US06495415B2

公开(公告)日：2002-12-17

申请号：US10027532

申请日：2001-12-26

申请人： Walter Hartner ,  Igor Kasko ,  Volker Weinrich ,  Frank Hintermaier ,  Günther Schindler ,  Hermann Wendt

发明人： Walter Hartner ,  Igor Kasko ,  Volker Weinrich ,  Frank Hintermaier ,  Günther Schindler ,  Hermann Wendt

IPC分类号： H01L218242

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L21/76838 ,  H01L27/10852 ,  H01L28/60

摘要： A method for fabricating a patterned layer from a layer material. The method includes steps of: providing a substrate with at least one target region and at least one migration region; applying a layer material; adding a material to the layer material; and performing a heat treatment such that the layer material migrates from the migration region to the target region and a layer which is self-aligned and self-patterned with respect to the target region is formed. The method has the advantage that the layer material, which can often only be etched with difficulty, does not have to be patterned directly. The desired structure of the layer is predetermined by preliminarily structuring the substrate into a target region and a migration region, and is produced by the migration of the layer material as a result of the heat treatment.

公开(公告)号：US06730562B2

公开(公告)日：2004-05-04

申请号：US10364819

申请日：2003-02-11

申请人： Manfred Engelhardt ,  Walter Hartner ,  Frank Hintermaier ,  Günther Schindler ,  Volker Weinrich

发明人： Manfred Engelhardt ,  Walter Hartner ,  Frank Hintermaier ,  Günther Schindler ,  Volker Weinrich

IPC分类号： H01L218242

CPC分类号： H01L28/55 ,  H01L21/31122

摘要： A method for structuring ferroelectric layers on semiconductor substrates retains or regenerates the adherence and breakdown voltage resistance of the ferroelectric layer, which is especially significant for producing storage capacitors in large-scale integrated FeRAM and DRAM memory components. The addition of H2O or O2 results principally in the recovery of the electrostatic breakdown strength of the ferroelectric layer, which is of importance in particular when the ferroelectric serves as a dielectric of a storage capacitor and has to withstand electric fields of 5-10×106 V/m without a significant leakage current.

摘要翻译： 用于在半导体衬底上构造铁电层的方法保留或再生强电介质层的粘附和耐击穿电压，这对于在大规模集成的FeRAM和DRAM存储器组件中产生存储电容器尤其重要。 H 2 O或O 2的添加主要导致铁电层的静电击穿强度的恢复，特别是当铁电体用作储能电容器的电介质并且必须承受5-10×10 6的电场时，这尤其重要 > V / m，没有明显的漏电流。

公开(公告)号：US06790676B2

公开(公告)日：2004-09-14

申请号：US10204830

申请日：2002-12-05

申请人： Hans Cerva ,  Walter Hartner ,  Frank Hintermaier ,  Joachim Hoepfner ,  Guenther Schindler ,  Volker Weinrich ,  Franz Winterauer

发明人： Hans Cerva ,  Walter Hartner ,  Frank Hintermaier ,  Joachim Hoepfner ,  Guenther Schindler ,  Volker Weinrich ,  Franz Winterauer

IPC分类号： H01L2100

CPC分类号： H01L27/11502 ,  H01L21/31691 ,  H01L27/11507 ,  H01L28/55

摘要： A method for producing a ferroelectric layer includes preparing a substrate, applying a layer of material, which will be subsequently converted into the ferroelectric layer, and changing the material into the ferroelectric layer by applying an outer electrical field aligned with the direction desired in the ferroelectric material and heat treating the material. By providing a first noble metal electrode on the surface before applying the material that is to become the ferroelectric layer and then subsequently forming a second noble metal electrode on the ferroelectric layer, a ferroelectric storage capacitor can be formed. If the substrate is provided with memory cells, which include at least one transistor for each cell and the above-mentioned ferroelectric storage capacitors, a ferroelectric memory arrangement can be produced.

摘要翻译： 一种铁电体层的制造方法，其特征在于，准备基板，涂敷随后转变为铁电体层的材料层，并且通过施加与铁电体中所需的方向对准的外部电场，将材料变更为铁电体层 材料和热处理材料。 通过在施加成为铁电体层的材料之后，在表面上设置第一贵金属电极，然后在铁电体层上形成第二贵金属电极，可以形成铁电存储电容器。 如果衬底设置有存储单元，其包括用于每个单元的至少一个晶体管和上述铁电存储电容器，则可以制造铁电存储器布置。

公开(公告)号：US06316802B1

公开(公告)日：2001-11-13

申请号：US09282091

申请日：1999-03-30

申请人： Günther Schindler ,  Walter Hartner ,  Frank Hintermaier ,  Carlos Mazure-Espejo ,  Rainer Bruchhaus ,  Wolfgang Hönlein ,  Manfred Engelhardt

发明人： Günther Schindler ,  Walter Hartner ,  Frank Hintermaier ,  Carlos Mazure-Espejo ,  Rainer Bruchhaus ,  Wolfgang Hönlein ,  Manfred Engelhardt

IPC分类号： H01L27108

CPC分类号： H01L27/11502

摘要： The integrated semiconductor memory configuration has a semiconductor body in which selection transistors and storage capacitors are integrated. The storage capacitors have a dielectric layer configured between two electrodes. At least the upper electrode is constructed in a layered manner with a platinum layer, that is seated on the dielectric layer, and a thicker, base metal layer lying above the platinum layer.

摘要翻译： 集成半导体存储器配置具有集成了选择晶体管和存储电容器的半导体本体。 存储电容器具有在两个电极之间配置的电介质层。 至少上电极以分层的方式构成，铂层位于电介质层上，而较厚的贱金属层位于铂层之上。

公开(公告)号：US06438019B2

公开(公告)日：2002-08-20

申请号：US09756085

申请日：2001-01-08

申请人： Walter Hartner ,  Günther Schindler ,  Frank Hintermaier

发明人： Walter Hartner ,  Günther Schindler ,  Frank Hintermaier

IPC分类号： G11C1102

CPC分类号： H01L27/11502

摘要： The invention relates to a ferroelectric RAM configuration, including a number of storage cells, each of which has a selection transistor and a capacitor device with a ferroelectric dielectric. The capacitor device includes at least two capacitors whose coercive voltages are different from each other.

摘要翻译： 本发明涉及一种铁电RAM配置，其包括多个存储单元，每个存储单元具有选择晶体管和具有铁电介质的电容器器件。 电容器装置包括至少两个矫顽电压彼此不同的电容器。

公开(公告)号：US06168988A

公开(公告)日：2001-01-02

申请号：US09281691

申请日：1999-03-30

申请人： G{umlaut over (u)}nther Schindler ,  Walter Hartner ,  Frank Hintermaier ,  Carlos Mazure-Espejo

发明人： G{umlaut over (u)}nther Schindler ,  Walter Hartner ,  Frank Hintermaier ,  Carlos Mazure-Espejo

IPC分类号： H01L218242

CPC分类号： H01L27/11502 ,  H01L27/10808 ,  H01L27/10852 ,  H01L27/11517 ,  H01L28/55

摘要： A method for producing an integrated semiconductor memory configuration, in particular uses ferroelectric materials as storage dielectrics. A conductive connection between a first electrode of a storage capacitor and a selection transistor is produced only after deposition of the storage dielectric.

摘要翻译： 一种用于制造集成半导体存储器配置的方法，特别地使用铁电材料作为存储电介质。 存储电容器的第一电极和选择晶体管之间的导电连接仅在沉积存储电介质之后产生。

公开(公告)号：US06156673A

公开(公告)日：2000-12-05

申请号：US164115

申请日：1998-09-30

申请人： Frank Hintermaier ,  Carlos Mazure-Espejo

发明人： Frank Hintermaier ,  Carlos Mazure-Espejo

IPC分类号： B32B18/00 ,  C23C18/12 ,  H01B3/12 ,  H01B5/14 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L21/31

CPC分类号： C23C18/1208

摘要： A ceramic layer, in particular having ferroelectric, dielectric or superconducting properties, uses compounds with a simple structure as precursors and only methanoic acid, acetic acid or propionic acid and, where appropriate, water as solvent.

摘要翻译： 特别是具有铁电，电介质或超导特性的陶瓷层使用具有简单结构的化合物作为前体，并且仅使用甲酸，乙酸或丙酸，并且在适当时使用水作为溶剂。

公开(公告)号：US06669857B2

公开(公告)日：2003-12-30

申请号：US10073829

申请日：2002-02-11

申请人： Frank Hintermaier

发明人： Frank Hintermaier

IPC分类号： B44C122

CPC分类号： H01L21/31111 ,  C09K13/08

摘要： A process is described for etching oxide films containing at least one bismuth-containing oxide, in particular a ferroelectric bismuth-containing mixed oxide. A substrate onto which at least one oxide film containing at least one bismuth-containing oxide has been applied is provided. An etching solution containing from 2 to 20% by weight of a fluoride ion donor, from 15 to 60% by weight of nitric acid and from 20 to 83% by weight of water is brought into contact with the substrate so that the etching solution can react with the oxide film. The etching solution is removed from the substrate. The etching solution is also used in a process for structuring bismuth-containing oxide films.

公开(公告)号：US6010744A

公开(公告)日：2000-01-04

申请号：US996574

申请日：1997-12-23

申请人： Peter Van Buskirk ,  Jeff Roeder ,  Frank Hintermaier ,  Bryan Hendrix ,  Thomas H. Baum

发明人： Peter Van Buskirk ,  Jeff Roeder ,  Frank Hintermaier ,  Bryan Hendrix ,  Thomas H. Baum

IPC分类号： C23C16/04 ,  C23C16/40 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  B05D5/00

CPC分类号： H01L21/02271 ,  C23C16/04 ,  C23C16/40 ,  H01L21/02197 ,  H01L21/02299 ,  H01L21/31691 ,  Y10S977/891

摘要： A method is described for the nucleation controlled deposition of ferroelectric thin films by chemical vapor deposition in a novel processing sequence wherein a higher density of bismuth nucleation sites is achieved either by the use of a substrate member which has been treated in a manner to yield a controllably and reproducible rough surface on which SBT films with excellent properties may be produced or by using a chemically modified substrate surface upon which surface chemical properties are modified. Typical techniques for achieving surface roughening include reactive ion etching, inert ion milling and chemical mechanical polishing, each of which may be used to delineate patterned bottom electrodes. The chemical properties of the substrate may be modified by alloy deposition, deposition of seed layers which are then partially or completely in-diffused ion implantation with or without heat treatment and changing the chemistry of the surface by a pre-exposure to chemical agents prior to deposition. The resultant oxide ferroelectric thin films are suitable for use in capacitors, memory devices and the like.

摘要翻译： 描述了一种通过化学气相沉积的铁电薄膜的成核控制沉积的方法，其中新颖的加工顺序中，其中通过使用已经以产生a的方式处理的基底部件实现了较高密度的铋成核位点 粗糙表面的可控制和可重复性，可以在其上生产具有优异性能的SBT膜或通过使用改性表面化学性质的化学改性的基材表面。 用于实现表面粗糙化的典型技术包括反应离子蚀刻，惰性离子研磨和化学机械抛光，其中每一种可用于描绘图案化底部电极。 基材的化学性质可以通过合金沉积，种子层的沉积进行改性，然后种子层将被部分或全部扩散离子注入，有或者没有热处理，并且通过预先暴露于化学试剂之前改变表面的化学性质， 沉积 所得到的氧化物铁电薄膜适用于电容器，存储器件等。