Nanoscale Three-Terminal Switching Device
    1.
    发明申请
    Nanoscale Three-Terminal Switching Device 有权
    纳米三端开关装置

    公开(公告)号:US20110024714A1

    公开(公告)日:2011-02-03

    申请号:US12512230

    申请日:2009-07-30

    IPC分类号: H01L45/00 H01L21/34

    摘要: A nanoscale three-terminal switching device has a bottom electrode, a top electrode, and a side electrode, each of which may be a nanowire. The top electrode extends at an angle with respect to the bottom electrode and has an end section going over and overlapping the bottom electrode. An active region is disposed between the top electrode and bottom electrode and contains a switching material. The side electrode is disposed opposite from the top electrode and in electrical contact with the active region. A self-aligned fabrication process may be used to automatically align the formation of the top and side electrodes with respect to the bottom electrode.

    摘要翻译: 纳米尺寸的三端子开关器件具有底部电极,顶部电极和侧面电极,每个电极可以是纳米线。 顶部电极相对于底部电极以一定角度延伸,并且具有一个末端部分并且与底部电极重叠。 有源区设置在顶电极和底电极之间并且包含开关材料。 侧电极与顶电极相对设置并与有源区电接触。 可以使用自对准制造工艺来相对于底部电极自动对准顶部和侧面电极的形成。

    Nanoscale three-terminal switching device
    2.
    发明授权
    Nanoscale three-terminal switching device 有权
    纳米级三端开关器件

    公开(公告)号:US08270200B2

    公开(公告)日:2012-09-18

    申请号:US12512230

    申请日:2009-07-30

    IPC分类号: G11C11/00

    摘要: A nanoscale three-terminal switching device has a bottom electrode, a top electrode, and a side electrode, each of which may be a nanowire. The top electrode extends at an angle with respect to the bottom electrode and has an end section going over and overlapping the bottom electrode. An active region is disposed between the top electrode and bottom electrode and contains a switching material. The side electrode is disposed opposite from the top electrode and in electrical contact with the active region. A self-aligned fabrication process may be used to automatically align the formation of the top and side electrodes with respect to the bottom electrode.

    摘要翻译: 纳米尺寸的三端子开关器件具有底部电极,顶部电极和侧面电极,每个电极可以是纳米线。 顶部电极相对于底部电极以一定角度延伸,并且具有一个末端部分并且与底部电极重叠。 有源区设置在顶电极和底电极之间并且包含开关材料。 侧电极与顶电极相对设置并与有源区电接触。 可以使用自对准制造工艺来自动对准顶部和侧面电极相对于底部电极的形成。

    Guided mode resonator based Raman enhancement apparatus
    3.
    发明授权
    Guided mode resonator based Raman enhancement apparatus 有权
    引导型谐振器型拉曼增强器

    公开(公告)号:US08330952B2

    公开(公告)日:2012-12-11

    申请号:US12625304

    申请日:2009-11-24

    IPC分类号: G01J3/44

    摘要: A system for performing Raman spectroscopy comprises a waveguide layer configured with at least one array of features, the at least one array of features being configured to provide guided-mode resonance for at least one wavelength of electromagnetic radiation; and at least one fluid channel disposed in the waveguide layer. An analyte sensor comprises an electromagnetic radiation source configured to emit a range of wavelengths of electromagnetic radiation, the system for performing Raman spectroscopy, and at least one photodetector configured to detect Raman scattered light.

    摘要翻译: 用于执行拉曼光谱的系统包括配置有至少一个特征阵列的波导层,所述至少一个特征阵列被配置为为至少一个波长的电磁辐射提供导模谐振; 以及设置在波导层中的至少一个流体通道。 分析物传感器包括被配置为发射电磁辐射波长范围的电磁辐射源,用于执行拉曼光谱的系统,以及配置成检测拉曼散射光的至少一个光电检测器。

    Structure for surface enhanced raman spectroscopy
    4.
    发明授权
    Structure for surface enhanced raman spectroscopy 有权
    表面增强拉曼光谱的结构

    公开(公告)号:US07965388B2

    公开(公告)日:2011-06-21

    申请号:US12416907

    申请日:2009-04-01

    IPC分类号: G01J3/44 G01N21/65

    摘要: A structure for surface enhanced Raman spectroscopy is disclosed herein. A substrate has a stack configured vertically thereon. The stack encompasses at least two metal layers and at least one dielectric layer therebetween. Each layer of the stack has a controlled thickness, and each of the at least two metal layers is configured to exhibit a predetermined characteristic of plasmonic resonance.

    摘要翻译: 本文公开了表面增强拉曼光谱的结构。 衬底具有垂直地配置的堆叠。 堆叠包括至少两个金属层和其间的至少一个电介质层。 堆叠的每个层具有受控的厚度,并且所述至少两个金属层中的每一个被配置为表现出等离子体共振的预定特性。

    Three dimensional multilayer circuit
    6.
    发明授权
    Three dimensional multilayer circuit 有权
    三维多层电路

    公开(公告)号:US08431474B2

    公开(公告)日:2013-04-30

    申请号:US12567537

    申请日:2009-09-25

    申请人: Qiangfei Xia Wei Wu

    发明人: Qiangfei Xia Wei Wu

    IPC分类号: H01L21/44

    摘要: A method for forming three-dimensional multilayer circuit includes forming an area distributed CMOS layer configured to selectively address a set of first vias and a set of second vias. A template is then aligned with the first set of vias and lower crossbar segments are created using the template. The template is then removed, rotated, and aligned with the set of second vias. Upper crossbar segments which attach to the second set of vias are then created.

    摘要翻译: 一种用于形成三维多层电路的方法包括形成区域分布式CMOS层,其被配置为选择性地寻址一组第一通孔和一组第二通孔。 然后将模板与第一组通孔对齐,并使用模板创建下横截面段。 然后将模板移除,旋转并与该组第二通孔对齐。 然后创建附接到第二组通孔的上横向段。

    WAVEGUIDES CONFIGURED WITH ARRAYS OF FEATURES FOR PERFORMING RAMAN SPECTROSCOPY
    7.
    发明申请
    WAVEGUIDES CONFIGURED WITH ARRAYS OF FEATURES FOR PERFORMING RAMAN SPECTROSCOPY 有权
    配置有执行拉曼光谱特征的阵列的波形

    公开(公告)号:US20120182550A1

    公开(公告)日:2012-07-19

    申请号:US13384862

    申请日:2009-10-01

    IPC分类号: G01J3/44

    CPC分类号: G01N21/658 G01N21/7743

    摘要: Embodiments of the present invention are directed to systems for performing surface-enhanced Raman spectroscopy. In one embodiment, a system for performing Raman spectroscopy includes a waveguide layer (102,402,702,902) configured with at least one array of features, and a material (110,410,710,910) disposed on at least a portion of the features. Each array of features and the waveguide layer are configured to provide guided-mode resonance for at least one wavelength of electromagnetic radiation. The electromagnetic radiation produces enhanced Raman scattered light from analyte molecules located on or in proximity to the material.

    摘要翻译: 本发明的实施例涉及用于进行表面增强拉曼光谱的系统。 在一个实施例中,用于执行拉曼光谱的系统包括配置有至少一个特征阵列的波导层(102,402,702,902)和布置在特征的至少一部分上的材料(110,410,710,910)。 每个特征阵列和波导层被配置为为至少一个波长的电磁辐射提供导模谐振。 电磁辐射产生来自位于材料上或附近的分析物分子的增强的拉曼散射光。

    GUIDED MODE RESONATOR BASED RAMAN ENHANCEMENT APPARATUS
    8.
    发明申请
    GUIDED MODE RESONATOR BASED RAMAN ENHANCEMENT APPARATUS 有权
    基于引导模式谐振器的拉曼增强装置

    公开(公告)号:US20110122405A1

    公开(公告)日:2011-05-26

    申请号:US12625304

    申请日:2009-11-24

    IPC分类号: G01J3/44

    摘要: A system for performing Raman spectroscopy comprises a waveguide layer configured with at least one array of features, the at least one array of features being configured to provide guided-mode resonance for at least one wavelength of electromagnetic radiation; and at least one fluid channel disposed in the waveguide layer. An analyte sensor comprises an electromagnetic radiation source configured to emit a range of wavelengths of electromagnetic radiation, the system for performing Raman spectroscopy, and at least one photodetector configured to detect Raman scattered light.

    摘要翻译: 用于执行拉曼光谱的系统包括配置有至少一个特征阵列的波导层,所述至少一个特征阵列被配置为为至少一个波长的电磁辐射提供导模谐振; 以及设置在波导层中的至少一个流体通道。 分析物传感器包括被配置为发射电磁辐射波长范围的电磁辐射源,用于执行拉曼光谱的系统,以及配置成检测拉曼散射光的至少一个光电检测器。

    Switchable two-terminal devices with diffusion/drift species
    9.
    发明授权
    Switchable two-terminal devices with diffusion/drift species 有权
    具有扩散/漂移物种的可切换双端子器件

    公开(公告)号:US08879300B2

    公开(公告)日:2014-11-04

    申请号:US13384853

    申请日:2010-04-22

    摘要: Various embodiments of the present invention are directed to nanoscale electronic devices that provide nonvolatile memristive switching. In one aspect, a two-terminal device (600) comprises a first electrode (602), a second electrode (604), and an active region (606) disposed between the first electrode and the second electrode. The active region includes a mobile dopant (608), and a fast drift ionic species (610). The fast drift ionic species drifts into a diode-like electrode/active region interface temporarily increasing conductance across the interface when a write voltage is applied to the two-terminal device to switch the device conductance.

    摘要翻译: 本发明的各种实施例涉及提供非易失性忆阻切换的纳米级电子器件。 在一个方面,双端器件(600)包括第一电极(602),第二电极(604)和设置在第一电极和第二电极之间的有源区(606)。 有源区包括移动掺杂剂(608)和快速漂移的离子物质(610)。 当向双端器件施加写入电压以切换器件电导时,快速漂移的离子物质漂移到二极管状电极/有源区接口中,暂时增加跨接口的电导。