公开(公告)号：US07170775B2

公开(公告)日：2007-01-30

申请号：US11030453

申请日：2005-01-06

Applicant: Wen Chin Lin ,  Denny D. Tang ,  Li-Shyue Lai

Inventor： Wen Chin Lin ,  Denny D. Tang ,  Li-Shyue Lai

IPC: G11C11/00

CPC classification number: G11C11/16 ,  G11C5/063

Abstract: A magnetic random access memory (MRAM) cell that includes an MRAM stack and a conductive line for carrying write current associated with the MRAM cell. The conductive line is oriented in a direction that is angularly offset from an easy axis of the MRAM stack by an acute angle, such as about 45 degrees.

Abstract translation: 磁性随机存取存储器（MRAM）单元，其包括用于承载与MRAM单元相关联的写入电流的MRAM堆叠和导线。 导线沿着与MRAM堆叠的容易轴成角度偏移的方向定向为锐角，例如约45度。

公开(公告)号：US06167631A

公开(公告)日：2001-01-02

申请号：US09321855

申请日：1999-05-28

Applicant: Wen Chin Lin

Inventor： Wen Chin Lin

IPC: G01C916

CPC classification number: G01C9/16

Abstract: A plummet level for checking the horizontal state of a surface and locating two vertically spaced points generally required by wood working in most interior decorative works. The plummet level includes a rectangular main body divided into front and rear compartments for balance beam and weight-loaded swing link, respectively, to mount therein on a central pivot shaft. Two long clear windows are separately provided on walls of the main body facing the balance beam and the swing link. A plurality of spaced and parallel check lines horizontally extend a full length of the windows. A user may visually overlap one of the check lines on the windows and a reference level/vertical line on the balance beam/swing link to check a working surface for its horizontal or vertical state. Two extensible links are connected to two ends of the main body with four right-angled corners defined by an end plate of each extensible link always in alignment with four side walls of the main body, so that the plummet level may be easily extended to conveniently locate and mark a horizontally or vertically corresponding point at a distance longer than the main body of the plummet level.

Abstract translation: 用于检查表面的水平状态并定位通常在大多数室内装饰作品中木材加工所需的两个垂直间隔的位置的垂直等级。 直立式液位计包括一个矩形主体，分别分成用于平衡梁和重量的摆动连杆的前后舱，以便将其安装在中心枢轴上。 两个长的透明窗口分别设置在主体的面向平衡梁和摆动连杆的墙壁上。 多个间隔开且平行的检查线水平地延伸窗口的全长。 用户可以视觉地重叠窗口上的支线和其中一条支撑线/摆动连杆上的基准水平/垂直线，以检查工作表面的水平或垂直状态。 两个可延伸的连接件连接到主体的两端，四个直角由每个可伸缩连杆的端板限定，总是与主体的四个侧壁对准，使得倾斜程度可以容易地伸长到方便 定位并标记一个水平或垂直对应的点，距离远于对等体的主体。

公开(公告)号：US07099176B2

公开(公告)日：2006-08-29

申请号：US10827079

申请日：2004-04-19

Applicant: Wen Chin Lin ,  Denny D. Tang ,  Li-Shyue Lai

Inventor： Wen Chin Lin ,  Denny D. Tang ,  Li-Shyue Lai

IPC: G11C5/08

CPC classification number: G11C11/16

Abstract: An MRAM cell including an MRAM cell stack located over a substrate and first and second write lines spanning at least one side of the MRAM cell stack and defining a projected region of intersection of the MRAM cell stack and the first and second write lines. The MRAM cell stack includes a pinned layer, a tunneling barrier layer, and a free layer, the tunneling barrier layer interposing the pinned layer and the free layer. The first write line extends in a first direction within the projected region of intersection. The second write line extends in a second direction within the projected region of intersection. The first and second directions are angularly offset by an angle ranging between 45 and 90 degrees, exclusively. At least one write line may be perpendicular to the easy axis of free layer, while the other line may be rotated off the easy axis of the free layer by an angle which is larger than zero, such as to compensate for a shifting astroid curve.

Abstract translation: MRAM单元包括位于衬底上的MRAM单元堆叠，以及横跨MRAM单元堆叠的至少一侧的第一和第二写入线，并且定义MRAM单元堆叠与第一和第二写入线之间的投影区域。 MRAM单元堆叠包括钉扎层，隧道势垒层和自由层，隧道势垒层插入被钉扎层和自由层。 第一写入线在投影的交叉区域内沿第一方向延伸。 第二写入线在投影的交叉区域内沿第二方向延伸。 第一和第二方向的角度偏移45度到90度之间的角度。 至少一条写入线可以垂直于自由层的容易轴，而另一条线可以从自由层的容易轴旋转大于零的角度，以补偿移动的星形曲线。

公开(公告)号：US20060038210A1

公开(公告)日：2006-02-23

申请号：US10685824

申请日：2004-08-23

Applicant: Wen Chin Lin ,  Denny Tang ,  Chien-Chung Hung

Inventor： Wen Chin Lin ,  Denny Tang ,  Chien-Chung Hung

IPC: H01L29/94

CPC classification number: G11C11/15 ,  G11C11/5607 ,  G11C2211/5615 ,  H01L27/228

Abstract: The present disclosure provides an improved magnetic memory cell. The magnetic memory cell includes a switching element and two magnetic tunnel junction (MTJ) devices. A conductor connects the first and second MTJ devices in a parallel configuration, and serially connecting the parallel configuration to an electrode of the switching element. The resistance of the first MTJ device is different from the resistance of the second.

Abstract translation: 本公开提供了一种改进的磁存储单元。 磁存储单元包括开关元件和两个磁性隧道结（MTJ）器件。 导体以并联结构连接第一和第二MTJ装置，并且将并联配置串联连接到开关元件的电极。 第一台MTJ装置的电阻不同于第二台的电阻。

公开(公告)号：US06873535B1

公开(公告)日：2005-03-29

申请号：US10771691

申请日：2004-02-04

Applicant: Wen Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chao-Hsiung Wang

Inventor： Wen Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chao-Hsiung Wang

IPC: G11C5/08 ,  H01L21/8246 ,  H01L27/22

CPC classification number: H01L27/228 ,  B82Y10/00

Abstract: A magnetic random access memory (MRAM) cell including an MRAM cell stack located over a substrate and first and second write lines spanning opposing termini of the MRAM cell stack. At least one of the first and second write lines includes at least one first portion spanning the MRAM cell stack and at least one second portion proximate the MRAM cell stack. The first and second portions have first and second cross-sectional areas, respectively, wherein the first cross-sectional area is substantially less than the second cross-sectional area.

Abstract translation: 磁性随机存取存储器（MRAM）单元，其包括位于衬底上的MRAM单元堆叠以及横跨MRAM单元堆叠的相对端的第一和第二写入线。 第一和第二写入行中的至少一个包括跨越MRAM单元堆栈的至少一个第一部分和靠近MRAM单元堆栈的至少一个第二部分。 第一和第二部分分别具有第一和第二横截面区域，其中第一横截面面积基本上小于第二横截面面积。

公开(公告)号：US07312506B2

公开(公告)日：2007-12-25

申请号：US11093652

申请日：2005-03-30

Applicant: Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Chin Lin

Inventor： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Chin Lin

IPC: H01L29/82

CPC classification number: G11C11/16

Abstract: A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.

Abstract translation: 存储单元结构。 第一导线由分别具有第一容易轴和第二容易轴的至少两个第一铁磁层，位于第一铁磁层之间的纳米氧化物层和第一固定铁磁层包层。 第一和第二容易轴与第一容易轴90度扭转耦合，平行于第一导电线的长度，第二容易轴垂直于第一导线的长度。 存储装置与第一导线相邻，接收从流经第一导线的电流产生的磁场。

公开(公告)号：US07166881B2

公开(公告)日：2007-01-23

申请号：US10685824

申请日：2004-08-23

Applicant: Wen Chin Lin ,  Denny D. Tang ,  Chien-Chung Hung

Inventor： Wen Chin Lin ,  Denny D. Tang ,  Chien-Chung Hung

IPC: H01L29/76

CPC classification number: G11C11/15 ,  G11C11/5607 ,  G11C2211/5615 ,  H01L27/228

Abstract: The present disclosure provides an improved magnetic memory cell. The magnetic memory cell includes a switching element and two magnetic tunnel junction (MTJ) devices. A conductor connects the first and second MTJ devices in a parallel configuration, and serially connecting the parallel configuration to an electrode of the switching element. The resistance of the first MTJ device is different from the resistance of the second.

Abstract translation: 本公开提供了一种改进的磁存储单元。 磁存储单元包括开关元件和两个磁性隧道结（MTJ）器件。 导体以并联结构连接第一和第二MTJ装置，并且将并联配置串联连接到开关元件的电极。 第一台MTJ装置的电阻不同于第二台的电阻。

公开(公告)号：US07105879B2

公开(公告)日：2006-09-12

申请号：US10827769

申请日：2004-04-20

Applicant: Wen Chin Lin ,  Denny Tang ,  Li-shyue Lai ,  Chao-Hsiung Wang

Inventor： Wen Chin Lin ,  Denny Tang ,  Li-shyue Lai ,  Chao-Hsiung Wang

IPC: H01L29/76

CPC classification number: G11C11/15 ,  G11C5/063

Abstract: A magnetic random access memory device (MRAM) and the method for forming the same are disclosed. The MRAM has a magnetic tunnel junction (MTJ) device, a first write line, and a second write line orthogonal to the first write line, wherein at least one of the first and second write lines has a width narrower than that of the MTJ.

公开(公告)号：US07071478B2

公开(公告)日：2006-07-04

申请号：US10816612

申请日：2004-04-02

Applicant: Wen Chin Lin ,  Denny Tang ,  Li-shyue Lai ,  John Chern ,  Jyh-Chyurn Guo ,  Wan-Yih Lien

Inventor： Wen Chin Lin ,  Denny Tang ,  Li-shyue Lai ,  John Chern ,  Jyh-Chyurn Guo ,  Wan-Yih Lien

IPC: G21K4/00

CPC classification number: H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31788

Abstract: A method and system is disclosed for directing charged particles on predetermined areas on a target semiconductor substrate. After aligning a wafer mask with a semiconductor wafer, with the wafer mask having one or more mask patterns thereon, the charged particles are directed to pass through the mask patterns to land on one or more selected areas on the semiconductor wafer.

Abstract translation: 公开了一种用于将带电粒子引导到目标半导体衬底上的预定区域上的方法和系统。 在将晶片掩模与半导体晶片对准之后，晶片掩模在其上具有一个或多个掩模图案，带电粒子被引导通过掩模图案，以着陆在半导体晶片上的一个或多个选定的区域上。