公开(公告)号：US08815618B2

公开(公告)日：2014-08-26

申请号：US12541787

申请日：2009-08-14

申请人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

发明人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

IPC分类号： H01L33/00 ,  H01L21/78

CPC分类号： H01L33/0062 ,  H01L21/78 ,  H01L33/0066 ,  H01L33/0079 ,  H01L2924/01078 ,  H01S5/1231 ,  H01S5/2275

摘要： A light-emitting diode (LED) device is provided. The LED device is formed by forming an LED structure on a first substrate. A portion of the first substrate is converted to a porous layer, and a conductive substrate is formed over the LED structure on an opposing surface from the first substrate. The first substrate is detached from the LED structure along the porous layer and any remaining materials are removed from the LED structure.

摘要翻译： 提供了一种发光二极管（LED）装置。 LED器件通过在第一衬底上形成LED结构而形成。 将第一衬底的一部分转换成多孔层，并且在与第一衬底相对的表面上的LED结构上形成导电衬底。 第一衬底沿着多孔层与LED结构分离，并且从LED结构中去除任何剩余的材料。

公开(公告)号：US08742441B2

公开(公告)日：2014-06-03

申请号：US12547428

申请日：2009-08-25

申请人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

发明人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC分类号： H01L29/72

CPC分类号： H01L33/44 ,  H01L33/08 ,  H01L33/20

摘要： A light-emitting diode (LED) device is provided. The LED device has a substrate and an LED structure overlying the substrate. Embedded elements are embedded within one or more layers of the LED structure. In an embodiment, the embedded elements include a dielectric material extending through the LED structure such that the embedded elements are surrounded by the LED structure. In another embodiment, the embedded elements only extend through an upper layer of the LED structure, or alternatively, partially through the upper layer of the LED structure. Another conductive layer may be formed over the upper layer of the LED structure and the embedded elements.

摘要翻译： 提供了一种发光二极管（LED）装置。 LED器件具有衬底和覆盖衬底的LED结构。 嵌入式元件嵌入LED结构的一层或多层内。 在一个实施例中，嵌入元件包括延伸穿过LED结构的电介质材料，使得嵌入元件被LED结构包围。 在另一个实施例中，嵌入式元件仅延伸穿过LED结构的上层，或者部分地穿过LED结构的上层。 另外的导电层可以形成在LED结构的上层和嵌入元件上。

公开(公告)号：US08629465B2

公开(公告)日：2014-01-14

申请号：US13358327

申请日：2012-01-25

申请人： Chen-Hua Yu ,  Hung-Ta Lin ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu

发明人： Chen-Hua Yu ,  Hung-Ta Lin ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu

IPC分类号： H01L33/08

CPC分类号： H01L33/48 ,  H01L33/20 ,  H01L33/24

摘要： A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.

摘要翻译： 提供了一种形成在凹面纹理基板上的发光二极管（LED）的半导体器件。 对衬底进行图案化和蚀刻以形成凹陷。 沿着凹部的底部形成分离层。 沿着侧壁和任选地沿着相邻凹部之间的基板的表面形成LED结构。 在这些实施例中，与平面表面相比，LED结构的表面积增加。 在另一个实施例中，LED结构形成在凹部内，使得底部接触层与凹部的拓扑不一致。 在这些实施例中，硅衬底中的凹槽导致底接触层中的立方结构，例如具有非极性特性并且表现出更高外部量子效率的n-GaN层。

公开(公告)号：US08525216B2

公开(公告)日：2013-09-03

申请号：US13269968

申请日：2011-10-10

申请人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

发明人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48227 ,  H05K1/0206 ,  H05K1/113 ,  H05K2201/10106 ,  H01L2924/00014 ,  H01L2924/00

摘要： A circuit structure includes a carrier substrate, which includes a first through-via and a second through-via. Each of the first through-via and the second through-via extends from a first surface of the carrier substrate to a second surface of the carrier substrate opposite the first surface. The circuit structure further includes a light-emitting diode (LED) chip bonded onto the first surface of the carrier substrate. The LED chip includes a first electrode and a second electrode connected to the first through-via and the second through-via, respectively.

摘要翻译： 电路结构包括载体基板，其包括第一通孔和第二通孔。 第一通孔和第二通孔中的每一个从载体衬底的第一表面延伸到与第一表面相对的载体衬底的第二表面。 电路结构还包括结合到载体基板的第一表面上的发光二极管（LED）芯片。 LED芯片包括分别连接到第一通孔和第二通孔的第一电极和第二电极。

公开(公告)号：US20120298956A1

公开(公告)日：2012-11-29

申请号：US13567734

申请日：2012-08-06

申请人： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

发明人： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

IPC分类号： H01L33/60 ,  H01L33/04

CPC分类号： H01L33/007 ,  C23C14/048 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L25/167 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

摘要翻译： 提供一种形成发光二极管（LED）器件并将LED器件与生长衬底分离的方法。 LED器件通过在生长衬底上形成LED结构而形成。 该方法包括在生长衬底上形成和图案化掩模层。 在图案化掩模层上形成第一接触层，在第一接触层和图案化掩模层之间具有空气桥。 第一接触层可以是LED结构的接触层。 在形成LED结构之后，生长衬底沿着空气桥与LED结构分离。

公开(公告)号：US20120025234A1

公开(公告)日：2012-02-02

申请号：US13267701

申请日：2011-10-06

申请人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu ,  Hung-Ta Lin

发明人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu ,  Hung-Ta Lin

IPC分类号： H01L33/06

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32

摘要： A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.

摘要翻译： 提供了一种发光二极管（LED）装置。 LED装置已经凸起形成在基板上的半导体区域。 在凸起的半导体区域上形成LED结构，使得LED器件的底部接触层和有源层是保形层。 顶部接触层具有平坦的表面。 在一个实施例中，顶部接触层在多个凸起的半导体区域上是连续的，而底部接触层和有源层在相邻凸起的半导体区域之间是不连续的。

公开(公告)号：US20110189837A1

公开(公告)日：2011-08-04

申请号：US12972184

申请日：2010-12-17

申请人： Chen-Hua Yu ,  Chia-Lin Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

发明人： Chen-Hua Yu ,  Chia-Lin Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

IPC分类号： H01L21/20

CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02617 ,  H01L21/02664

摘要： A method of forming a semiconductor structure includes providing a substrate; forming a buffer/nucleation layer over the substrate; forming a group-III nitride (III-nitride) layer over the buffer/nucleation layer; and subjecting the III-nitride layer to a nitridation. The step of forming the III-nitride layer comprises metal organic chemical vapor deposition.

摘要翻译： 形成半导体结构的方法包括提供基板; 在衬底上形成缓冲/成核层; 在缓冲/成核层上形成III族氮化物（III族氮化物）层; 并对该III族氮化物层进行氮化。 形成III族氮化物层的步骤包括金属有机化学气相沉积。

公开(公告)号：US20100051972A1

公开(公告)日：2010-03-04

申请号：US12535525

申请日：2009-08-04

申请人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

发明人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48227 ,  H05K1/0206 ,  H05K1/113 ,  H05K2201/10106 ,  H01L2924/00014 ,  H01L2924/00

摘要： A circuit structure includes a carrier substrate, which includes a first through-via and a second through-via. Each of the first through-via and the second through-via extends from a first surface of the carrier substrate to a second surface of the carrier substrate opposite the first surface. The circuit structure further includes a light-emitting diode (LED) chip bonded onto the first surface of the carrier substrate. The LED chip includes a first electrode and a second electrode connected to the first through-via and the second through-via, respectively.

摘要翻译： 电路结构包括载体基板，其包括第一通孔和第二通孔。 第一通孔和第二通孔中的每一个从载体衬底的第一表面延伸到与第一表面相对的载体衬底的第二表面。 电路结构还包括结合到载体基板的第一表面上的发光二极管（LED）芯片。 LED芯片包括分别连接到第一通孔和第二通孔的第一电极和第二电极。

公开(公告)号：US20100032696A1

公开(公告)日：2010-02-11

申请号：US12189635

申请日：2008-08-11

申请人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu ,  Hung-Ta Lin

发明人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu ,  Hung-Ta Lin

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32

摘要： A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.

摘要翻译： 提供了一种发光二极管（LED）装置。 LED装置已经凸起形成在基板上的半导体区域。 在凸起的半导体区域上形成LED结构，使得LED器件的底部接触层和有源层是保形层。 顶部接触层具有平坦的表面。 在一个实施例中，顶部接触层在多个凸起的半导体区域上是连续的，而底部接触层和有源层在相邻凸起的半导体区域之间是不连续的。

公开(公告)号：US20090272975A1

公开(公告)日：2009-11-05

申请号：US12189558

申请日：2008-08-11

申请人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chia-Lin Yu ,  Chen-Hua Yu

发明人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chia-Lin Yu ,  Chen-Hua Yu

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02595

摘要： A structure and method for a light-emitting diode are presented. A preferred embodiment comprises a substrate with a conductive, poly-crystalline, silicon-containing layer over the substrate. A first contact layer is epitaxially grown, using the conductive, poly-crystalline, silicon-containing layer as a nucleation layer. An active layer is formed over the first contact layer, and a second contact layer is formed over the active layer.

摘要翻译： 提出了一种发光二极管的结构和方法。 优选的实施方案包括在衬底上具有导电的，多晶的含硅层的衬底。 使用导电多晶硅层作为成核层，外延生长第一接触层。 在第一接触层上形成有源层，并且在有源层上形成第二接触层。