Slit valve method and apparatus
    1.
    发明授权
    Slit valve method and apparatus 失效
    狭缝阀方法和装置

    公开(公告)号:US07007919B2

    公开(公告)日:2006-03-07

    申请号:US10418682

    申请日:2003-04-17

    IPC分类号: F16K3/16

    CPC分类号: H01L21/67126 F16K51/02

    摘要: An actuator assembly for a slit valve door is configured to maintain a slit valve in a closed condition notwithstanding a high pressure differential between adjacent chambers that the slit valve isolates from each other. The slit valve door actuator assembly includes an actuator which moves the slit valve door between open and closed positions, and a locking mechanism to keep the slit valve door in a position to seal the slit valve in resistance to high gas pressure against the slit valve door. The locking mechanism may include a hard stop which is selectively movable into position to block retracting movement of the slit valve door.

    摘要翻译: 用于狭缝阀门的致动器组件被配置为使狭缝阀保持在闭合状态,尽管狭缝阀彼此分离的相邻室之间具有高压差。 狭缝阀门致动器组件包括使狭缝阀门在打开和关闭位置之间移动的致动器,以及锁定机构,以将狭缝阀门保持在密封狭缝阀的位置,以抵抗狭缝阀门的高气压 。 锁定机构可以包括硬挡块,其可选择性地移动到位置以阻挡狭缝阀门的缩回运动。

    DUAL SUBSTRATE LOADLOCK PROCESS EQUIPMENT
    3.
    发明申请
    DUAL SUBSTRATE LOADLOCK PROCESS EQUIPMENT 审中-公开
    双基板负载工艺设备

    公开(公告)号:US20070086881A1

    公开(公告)日:2007-04-19

    申请号:US11613556

    申请日:2006-12-20

    摘要: One embodiment relates to a loadlock having a first support structure therein to support one unprocessed substrate and a second support structure therein to support one processed substrate. The first support structure is located above the second support structure. The loadlock includes an elevator to control the vertical position of the support structures. The loadlock also includes a first aperture to permit insertion of an unprocessed substrate into the loadlock and removal of a processed substrate from the loadlock, as well as a second aperture to permit removal of an unprocessed substrate from the loadlock and insertion of a processed substrate into the loadlock. A cooling plate is also located in the loadlock. The cooling plate includes a surface adapted to support a processed substrate thereon. A heating device may be located in the loadlock above the first support structure.

    摘要翻译: 一个实施例涉及一种其中具有第一支撑结构的负载锁,用于支撑一个未处理的基板和其中的第二支撑结构以支撑一个处理的基板。 第一支撑结构位于第二支撑结构的上方。 负载锁包括用于控制支撑结构的垂直位置的电梯。 负载锁还包括第一孔,以允许将未处理的衬底插入到装载锁中并从加载锁中移除经处理的衬底,以及第二孔,以允许将未处理的衬底从负载锁上移除并将经处理的衬底插入 负载锁。 一个冷却板也位于负载锁中。 冷却板包括适于在其上支撑经处理的基板的表面。 加热装置可以位于第一支撑结构上方的装载锁中。

    Electronic device manufacturing chamber and methods of forming the same
    4.
    发明申请
    Electronic device manufacturing chamber and methods of forming the same 审中-公开
    电子器件制造室及其形成方法

    公开(公告)号:US20060051507A1

    公开(公告)日:2006-03-09

    申请号:US11145003

    申请日:2005-06-02

    IPC分类号: C23C16/00

    CPC分类号: H01L21/67236 H01L21/67196

    摘要: In a first aspect, a first multi-piece chamber is provided. The first multi-piece chamber includes (1) a central piece having a first side and a second side; (2) a first side piece adapted to couple with the first side of the central piece; and (3) a second side piece adapted to couple with the second side of the central piece. The central piece, the first side piece and the second side piece form a substantially cylindrical inner chamber region when coupled together. Numerous other aspects are provided.

    摘要翻译: 在第一方面,提供了第一多件式室。 第一多件式室包括(1)具有第一侧和第二侧的中心件; (2)适于与所述中心件的第一侧联接的第一侧件; 和(3)适于与所述中心件的第二侧联接的第二侧件。 当连接在一起时,中心件,第一侧件和第二侧件形成基本上圆柱形的内室区域。 提供了许多其他方面。

    Load lock chamber for large area substrate processing system
    5.
    发明申请
    Load lock chamber for large area substrate processing system 有权
    负载锁定室用于大面积基板处理系统

    公开(公告)号:US20050095088A1

    公开(公告)日:2005-05-05

    申请号:US10832795

    申请日:2004-04-26

    摘要: A load lock chamber and method for transferring large area substrates is provided. In one embodiment, a load lock chamber suitable for transferring large area substrates includes a plurality of vertically stacked single substrate transfer chambers. The configuration of vertically stacked single substrate transfer chambers contributes to reduced size and greater throughput as compared to conventional state of the art, dual slot dual substrate designs. Moreover, the increased throughput has been realized at reduced pumping and venting rates, which corresponds to reduced probability of substrate contamination due to particulates and condensation.

    摘要翻译: 提供了一种负载锁定室和用于传送大面积基板的方法。 在一个实施例中,适于传送大面积衬底的负载锁定室包括多个垂直堆叠的单个衬底传送室。 垂直堆叠的单个基板传送室的配置与现有技术的双槽双面基板设计相比,有助于减小尺寸和更大的通量。 此外,在减少的泵送和排气速率下已经实现了增加的产量,这对应于由于颗粒和冷凝引起的底物污染的可能性降低。

    Substrate support
    6.
    发明申请
    Substrate support 失效
    基材支持

    公开(公告)号:US20050063800A1

    公开(公告)日:2005-03-24

    申请号:US10990094

    申请日:2004-11-16

    摘要: A method and apparatus for supporting a substrate is generally provided. In one aspect, an apparatus for supporting a substrate includes a support plate having a first body disposed proximate thereto. A first pushing member is radially coupled to the first body and adapted to urge the substrate in a first direction parallel to the support plate when the first body rotates. In another aspect, a load lock chamber having a substrate support that supports a substrate placed thereon includes a cooling plate that is moved to actuate at least one alignment mechanism. The alignment mechanism includes a pushing member that urges the substrate in a first direction towards a center of the support. The pushing member may additionally rotate about an axis perpendicular to the first direction.

    摘要翻译: 通常提供用于支撑衬底的方法和装置。 在一个方面,一种用于支撑衬底的装置包括具有靠近其设置的第一主体的支撑板。 第一推动构件径向耦合到第一主体并且适于在第一主体旋转时沿平行于支撑板的第一方向推动基板。 在另一方面,具有支撑其上放置的基板的基板支撑件的装载锁定室包括移动以致动至少一个对准机构的冷却板。 对准机构包括推动构件,其沿朝向支撑件的中心的第一方向推动基板。 推动构件可以另外围绕垂直于第一方向的轴旋转。

    PVD method to condition a substrate surface
    7.
    发明申请
    PVD method to condition a substrate surface 审中-公开
    PVD方法来调节基材表面

    公开(公告)号:US20070102283A1

    公开(公告)日:2007-05-10

    申请号:US11271660

    申请日:2005-11-10

    IPC分类号: C23C14/00

    摘要: A method for conditioning a surface of a substrate, particularly substrates useful in a fuel cell, is disclosed. In one aspect, a method is disclosed for treating a substrate to increase the substrate's resistance to acid etching. The method includes depositing a layer of etch-resistant material via a PVD process onto a surface of the substrate. The substrate may comprise a carbon composite material or a conductive polymer, among others. In one aspect, the layer of etch-resistant material is about 1000 Å thick or less. In another aspect, the layer of etch-resistant material is a TiN layer. In another embodiment, a method is provided for treating a surface of a substrate decrease the substrate's liquid contact angle. The method includes depositing a layer of hydrophilic material via a PVD process onto a surface of the substrate. In one aspect, the deposited material may be a low resistivity material.

    摘要翻译: 公开了一种用于调节基板的表面,特别是可用于燃料电池的基板的方法。 在一个方面,公开了一种用于处理基底以增加基底对酸蚀刻的抵抗力的方法。 该方法包括通过PVD工艺将一层耐蚀刻材料沉积到衬底的表面上。 基底可以包括碳复合材料或导电聚合物等。 在一个方面,耐蚀刻材料层的厚度大约为1000埃或更小。 另一方面,耐蚀刻材料层是TiN层。 在另一个实施方案中,提供了一种用于处理衬底表面的方法,降低了衬底的液体接触角。 该方法包括通过PVD工艺将一层亲水材料沉积到基底的表面上。 在一个方面,沉积材料可以是低电阻率材料。

    RF CURRENT RETURN PATH FOR A LARGE AREA SUBSTRATE PLASMA REACTOR
    8.
    发明申请
    RF CURRENT RETURN PATH FOR A LARGE AREA SUBSTRATE PLASMA REACTOR 失效
    大面积基片等离子体反应器的RF电流返回路径

    公开(公告)号:US20060231029A1

    公开(公告)日:2006-10-19

    申请号:US11425679

    申请日:2006-06-21

    IPC分类号: C23C16/00

    CPC分类号: H01J37/32082 H01J37/32577

    摘要: An apparatus for providing a return current path for RF current between a chamber wall and a substrate support is provided comprising a low impedance flexible curtain having a first end and a second end, the first end adapted to be electrically connected to the chamber wall and the second end adapted to be connected to the substrate support, wherein the curtain further comprises at least one fold in the curtain material, located an axial distance between the first end and the second end, and at least one perforation cut into the curtain proximate the second end.

    摘要翻译: 提供一种用于在室壁和衬底支撑件之间提供用于RF电流的返回电流路径的装置,其包括具有第一端和第二端的低阻抗柔性帘幕,所述第一端适于电连接到室壁和 第二端适于连接到基板支撑件,其中帘幕还包括帘幕材料中的至少一个折叠部,位于第一端部和第二端部之间的轴向距离处,并且至少一个穿孔切入靠近第二端部的帘幕 结束。

    METHOD FOR TRANSFERRING SUBSTRATES IN A LOAD LOCK CHAMBER
    9.
    发明申请
    METHOD FOR TRANSFERRING SUBSTRATES IN A LOAD LOCK CHAMBER 有权
    用于在负载锁箱中传送衬底的方法

    公开(公告)号:US20060182615A1

    公开(公告)日:2006-08-17

    申请号:US11278318

    申请日:2006-03-31

    IPC分类号: B65H1/00

    摘要: Provided herein is a substrate processing system, which comprises a cassette load station; a load lock chamber; a centrally located transfer chamber; and one or more process chambers located about the periphery of the transfer chamber. The load lock chamber comprises double dual slot load locks constructed at same location. Such system may be used for processing substrates for semiconductor manufacturing.

    摘要翻译: 本文提供了一种基板处理系统,其包括盒装载台; 负载锁定室; 位于中心的传送室; 以及位于传送室的周边周围的一个或多个处理室。 负载锁定室包括在相同位置构造的双重双槽加载锁。 这种系统可用于处理用于半导体制造的衬底。

    RF current return path for a large area substrate plasma reactor
    10.
    发明授权
    RF current return path for a large area substrate plasma reactor 失效
    用于大面积衬底等离子体反应器的RF电流返回路径

    公开(公告)号:US07083702B2

    公开(公告)日:2006-08-01

    申请号:US10460916

    申请日:2003-06-12

    IPC分类号: H01L21/00

    CPC分类号: H01J37/32082 H01J37/32577

    摘要: An apparatus for providing a return current path for RF current between a chamber wall and a substrate support is provided comprising a low impedance flexible curtain having a first end and a second end, the first end adapted to be electrically connected to the chamber wall and the second end adapted to be connected to the substrate support, wherein the curtain further comprises at least one fold in the curtain material, located an axial distance between the first end and the second end, and at least one perforation cut into the curtain proximate the second end.

    摘要翻译: 提供一种用于在室壁和衬底支撑件之间提供用于RF电流的返回电流路径的装置,其包括具有第一端和第二端的低阻抗柔性帘幕,所述第一端适于电连接到室壁和 第二端适于连接到基板支撑件,其中帘幕还包括帘幕材料中的至少一个折叠部,位于第一端部和第二端部之间的轴向距离处,并且至少一个穿孔切入靠近第二端部的帘幕 结束。