Low abosorbing resists for 157 nm lithography
    7.
    发明授权
    Low abosorbing resists for 157 nm lithography 失效
    低吸收光阻抗157 nm光刻

    公开(公告)号:US06794109B2

    公开(公告)日:2004-09-21

    申请号:US09791252

    申请日:2001-02-23

    IPC分类号: G03F7004

    摘要: The present invention provides photoresist materials for use in photolithography at wavelengths less than about 248 nm. More particularly, the photoresists of the invention are particularly suited for use in 157 nm lithography. A photoresist composition of the invention includes a polymer having at least one monomeric unit having an aromatic moiety. The monomeric unit further includes at least a group, such as an electron withdrawing group, attached to the aromatic moiety. The attached group includes at least one CF bond. The polymer further includes an acidic hydroxyl group. A photoresist composition of the invention can have an absorbance in a range of 1-5 &mgr;m−1 at 157 nm, rendering it particularly suitable for use as a single layer resist in 157 nm lithography.

    摘要翻译: 本发明提供了在波长小于约248nm的光刻中使用的光刻胶材料。 更具体地说,本发明的光致抗蚀剂特别适用于157nm光刻。 本发明的光致抗蚀剂组合物包括具有至少一个具有芳族部分的单体单元的聚合物。 单体单元还包括至少一个与芳族部分连接的基团,例如吸电子基团。 所附组包括至少一个CF键。 聚合物还包括酸性羟基。 本发明的光致抗蚀剂组合物可以在157nm处具有在1-5mum -1的范围内的吸光度,使其特别适合用作157nm光刻中的单层抗蚀剂。