摘要:
A system and method for simulating a mechanistic kinetic process, such as a chemical process including one or more chemical reactions, over a predetermined time period is provided. The simulation proceeds stochastically, by taking discrete time steps through the time period, and performing events (i.e., chemical reactions), based on the relationship between their probabilities of occurrence and the time steps taken. The system and method of the invention include means or method steps for detecting equilibrium conditions, in which a reaction moves forward and backward with a reaction probability which is high, relative to the probabilities of other reactions being simulated. When a reaction in equilibrium is detected, a probability calculation is made, based on the non-equilibrium reactions being simulated. Time steps are made, and events are simulated, based only on the non-equilibrium reactions. Thus, processing time, which would otherwise be consumed simulating back-and-forth events in the equilibrium reaction, is saved.
摘要:
The present invention comprises a simulator including at least one data storage apparatus and at least one processor. The simulator further has a material property data group, a system state data group comprising geometrical data for defining a plurality of geometrical subvolumes and system condition data for each subvolume of a simulated system, an event probability data group including a plurality of event subgroups for uniquely identifying a set of events, event probabilities being associated with at least one of the geometrical subvolumes, and an event process data group including the time dependent process functions for all events which can occur in the system. These data groups and at least one functional-relationship link for correlating all of them are stored in the data storage apparatus. Thus, the material energy system can be represented by such data groups without requiring an explicit multiple dimension data structure. The processor performs a simulating process comprising the steps of: (a) computing the probability of occurrence for each of the events and determining a time step by using a total probability of occurrence for each of the events; (b) randomly selecting a simulated event for the time step and updating the system condition data group representing the system state; and (c) repeating the steps (a) and (b) until a predefined simulation end time is reached.
摘要:
In one embodiment, the invention is a method and apparatus for sub-pellicle defect reduction on photomasks. One embodiment of a photomask for use in photolithography includes a substrate on which a pattern is formed, the substrate having a frontside and an opposite backside, and a protective coating formed on at least one of the frontside and the backside, the protective coating comprising silicon-based compound.
摘要:
Coating compositions suitable for UV imprint lithographic applications include at least one vinyl ether crosslinker having at least two vinyl ether groups; at least one diluent comprising a monofunctional vinyl ether compound; at least one photoacid generator soluble in a selected one or both of the at least one monofunctional vinyl ether compound and the at least one vinyl ether crosslinker having the at least two vinyl ether groups; and at least one stabilizer comprising an ester compound selectively substituted with a substituent at an ester position or an alpha and the ester positions. Also disclosed are imprint processes.
摘要:
A process for selectively depositing copper by first selectively depositing palladium seeds by irradiating a palladium compound with light. Following the deposition of the palladium seeds, copper is deposited by an electroless process.
摘要:
In one embodiment, the invention is a method and apparatus for sub-pellicle defect reduction on photomasks. One embodiment of a photomask for use in photolithography includes a substrate on which a pattern is formed, the substrate having a frontside and an opposite backside, and a protective coating formed on at least one of the frontside and the backside, the protective coating comprising silicon-based compound.
摘要:
A method for producing a magnetic structure, such as a thin film magnetic head, in which the magnetic and electrical characteristics of magnetic material are tailored to produce magnetic and electrical characteristics in selected localized areas of the magnetic material. In a specific embodiment, the structure comprises a layer of magnetic material having an overlayer and an underlayer, and the magnetic characteristics of the material are modified by rapid thermal annealing.
摘要:
A method for producing a magnetic structure, such as a thin film magnetic head, in which the magnetic and electrical characteristics of magnetic material are tailored to produce magnetic and electrical characteristics in selected localized areas of the magnetic material. In a specific embodiment, the structure comprises a layer of magnetic material having an overlayer and an underlayer, and the magnetic characteristics of the material are modified by rapid thermal annealing.
摘要:
In one embodiment, the invention is a method and apparatus for sub-pellicle defect reduction on photomasks. One embodiment of a photomask for use in photolithography includes a substrate on which a pattern is formed, the substrate having a frontside and an opposite backside, and a protective coating formed on at least one of the frontside and the backside, the protective coating comprising silicon-based compound.
摘要:
Coating compositions suitable for UV imprint lithographic applications are disclosed that include at least one vinyl ether crosslinker having at least two vinyl ether groups; at least one diluent comprising a monofunctional vinyl ether compound; and at least one photoacid generator soluble in a selected one or both of the at least one monofunctional ether compound and the at least one vinyl ether compound, wherein the at least one monofunctional ether compound and the at least one vinyl ether compound are free from fluorine and silicon substituents. Also disclosed are imprint processes.