摘要:
A composite ice confectionery product of the frozen type is prepared by pumping an ice composition into a former structure provided with an extrusion die so that the composition contained within the former passes through the former to the die for extrusion via the die and by pumping a material of texture different from that of the aerated ice confectionery through an assembly of a hollow spindle with nozzle(s) attached wherein the nozzle(s) is (are) provided with ports, particularly slots, for delivering the material into the ice confectionery composition stream in the former. The spindle is located and extends along and about an axis of the former within the ice confectionery stream and rotates about the axis and also translates axially in a reciprocating movement so that patterns of the material are formed in the ice confectionery to obtain a composite product having material inclusion zones and inclusion-free zones, and the composite product so-pumped is extruded via the die, to provide a strand which has a cross-section given by the die outlet opening, and then the strand is cut to provide slabs.
摘要:
A patterned composite food product has an ice confectionery composition component and an edible material component which is different from the ice confectionery composition, the edible material having a pattern form which is an inclusion pattern zone in the ice confectionery composition, and the pattern may have a layer form wherein a plurality of edible material layers are separated one from another and surrounded by the ice confectionery composition. The composite product is prepared by pumping an ice confectionery composition into a former structure provided with an extrusion die for product extrusion from the former structure and by pumping a the edible material component through an assembly of a hollow spindle with nozzle(s) attached wherein the nozzle(s) is (are) provided with ports, particularly slots, for delivering the edible material to within the ice confectionery composition pumped through the former structure. The spindle of the assembly is located and extends longitudinally towards the die about an axis of the former structure within the ice confectionery stream, and the assembly rotates about the axis and also translates axially in a reciprocating movement so that patterns of the edible material are formed in the ice confectionery composition to provide a composite product having edible material inclusion zones and inclusion-free zones. The composite product so-pumped is extruded via the die to provide a strand which has a cross-section given by the die outlet opening and then the strand is cut to provide composite product portions.
摘要:
In a SOI process, a high lateral voltage isolation structure is formed by providing at least two concentric dielectric filled trenches, removing the semiconductor material between the dielectric filled trenches and filling the resultant gap with dielectric material to define a single wide dielectric filled trench.
摘要:
A lateral DMOS transistor formed on a silicon-on-insulator (SOI) structure has a higher breakdown voltage that results from a cavity that is formed in the bulk region of the SOI structure. The cavity exposes a portion of the bottom surface of the insulator layer of the SOI structure that lies directly vertically below the drift region of the DMOS transistor.
摘要:
The spikes in current and voltage that result from the failure of a galvanic dielectric layer are safely contained by a galvanic isolation fuse that pops and forms and open circuit between a high-voltage die and a low-voltage die in response to the failure of the galvanic dielectric layer.
摘要:
A galvanic isolation integrated circuit system includes a semiconductor substrate; a layer of thermally conductive material, e.g., CVD nano- or poly-diamond thin film or boron nitride CVD thin film, formed over the semiconductor substrate; a first integrated circuit structure formed over the layer of thermally conductive material; a second integrated circuit structure formed over the layer of thermally conductive material, the second integrated circuit structure being spaced apart from the first integrated circuit structure; and a galvanic isolation structure formed over the layer of thermally conductive material between the first and second integrated circuit structures and connected to the first integrated circuit structure and the second integrated circuit structure.
摘要:
A self-propelled robotic device moves through bodily and other passageways by inflating regions of an overlying bladder along the length of the robotic device in a sequence that imparts motion to the device. The regions of the overlying bladder are inflated by energizing a plurality of coils, which are surrounded by a ferrofluid, in a sequence. The ferrofluid responds to the magnetic field created by an energized coil by creating a bulge in the side wall of the overlying bladder.
摘要:
An on-chip inductor structure is formed as part of an integrated circuit structure. The integrate circuit structure includes a semiconductor substrate having a top side and a back side, integrated circuit elements formed on the top side of the substrate, a conductive interconnect structure formed in contact with the integrated circuit elements and a passivation layer formed over the integrated circuit elements. The inductor structure comprises a layer of photoimageable epoxy formed on the passivation layer, a conductive inductor coil formed on the layer of photoimageable epoxy and at least one conductive via that extends from the inductor coil to the interconnect layer to provide electrical connection therebetween. Additionally, a back side trench may be formed in the back side of the semiconductor substrate beneath the inductor coil.
摘要:
A method for forming a doped region of a semiconductor device includes masking a portion of a substrate with a mask. The mask is configured to create a graded doping profile within the doped region. The method also includes performing an implant using the mask to create doped areas and undoped areas in the substrate. The method further includes diffusing the doped areas to create the graded doping profile in the doped region. The mask could include a first region having openings distributed throughout a photo-resist material, where the openings vary in size and spacing. The mask could also include a second region having blocks of photo-resist material distributed throughout an open region, where the photo-resist blocks vary in size and spacing. Diffusing the doped areas could include applying a high temperature anneal to smooth the doped and undoped areas to produce a linearly graded doping profile.
摘要:
In an AlGaN channel transistor formed on a orientation silicon wafer, a hole with walls slanted at 54 degrees is etched into the silicon to provide a orientation substrate surface for forming the AlGaN channel transistor.