摘要:
The present invention concerns a method and apparatus for disabling columns using a local fuse decoding system. The present invention uses local decoding in order to use a number of fuses that is less than the number of columns in order to disable column failures. This is particularly useful when the fuse pitch is greater than the column pitch which does not allow for a fuse to be implemented in each column.
摘要:
The present invention concerns data transition method and apparatus for driving a set of write data signals to an inactive (or deasserted) state upon completion of a WRITE to a particular group of memory cells. The present invention drives the write data signals to a an inactive state to end a WRITE without waiting for the end of the write control pulse. The present invention triggers a group of data write buffers to drive one of the write data signals to a "0" at the beginning of the WRITE control pulse or at a data input transition during a WRITE. A delayed transition of the write data signals may be used to drive both the write data signals to a "1"� to end the WRITE within a particular memory group. The write data transition detection is accomplished at the write data inputs of the groups of memory cells without relying on global chip data input pin transition detection and pulse width setting. The data setup to the end of WRITE is generally not compromised since the path from chip data input to the input to the write data signals is generally similar to existing implementations.
摘要:
The present invention concerns a method and apparatus for providing a dual level wordline clamp for use in a memory array. During a write operation, the clamp is at a level that ensures that a proper write margin is maintained. During a read operation, the clamp produces a lower level that reduces the overall current consumption of the circuit. During a write operation, the clamp also reduces the overall current consumption of the circuit. The present invention does not require complex reference circuits and, as a result, presents a minimal impact on die size.
摘要:
The present invention concerns a method and apparatus for providing a dual level wordline clamp for use in a memory array. During a write operation, the clamp is at a level that ensures that a proper write margin is maintained. During a read operation, the clamp produces a lower level that reduces the overall current consumption of the circuit. During a write operation, the clamp also reduces the overall current consumption of the circuit. The present invention does not require complex reference circuits and, as a result, presents a minimal impact on die size.
摘要:
An apparatus comprising a first circuit and a second circuit. The first circuit may be configured to generate a first output signal in response to one or more first input signals. The second circuit may be configured to generate a second output signal in response to one or more second input signals. The first and second output signals may be presented to a bond pad.
摘要:
An input buffer system has an input clipping circuit. The input clipping circuit has a high voltage input and uses transistors all being the thin oxide type transistors. A high voltage detect circuit is coupled to the input clipping circuit. An input buffer circuit is coupled to the input clipping circuit and has a low voltage output range.
摘要:
A circuit comprising a sense amplifier, an evaluation circuit, a control circuit and a register circuit. The sense amplifier circuit may be configured to present a first output and a second output in response to (i) an input signal and (ii) an enable signal. The evaluation circuit may be configured to present an evaluation signal in response to the first and second outputs. The control circuit may be configured to present (i) a first clock signal, a second clock signal and an enable signal in response to (i) the evaluation signal and (ii) a wordline signal. The register circuit may be configured to hold either the first or second output in response to the first and second clock signals. The register circuit may be implemented as a master-slave register that may respond to the first and second clock signals.
摘要:
A multi-port memory cell (200) can be formed from seven transistors. Single ended write operations can be performed without a boosted word line voltage or variable power supply. A data value (D/DB) stored in the memory cell (200) can be cleared by shorting complementary data nodes (204-0 and 204-1) together. Write data can then be placed on a bit line. Complementary data nodes (204-0 and 204-1) can then be isolated once again, resulting in the write data being latched within the memory cell (300). An access method (700) for a multi-port memory cell is also described.
摘要:
An apparatus comprising a first compare circuit, a second compare circuit and a memory. The first compare circuit may be configured to present a first match signal in response to a first address and a second address. The second compare circuit may be configured to present a second match signal in response to the first match signal, a first write enable signal and a second write enable signal. The memory may also be configured to present the first and second write enable signals. In one example, the memory may be configured to store and retrieve data with zero waiting cycles in response to the second match signal.
摘要:
An apparatus comprising a memory array having a first port and a one or more other ports and a control circuit configured to couple (i) a bitline of the first port to a corresponding bitline of the one or more other ports and (ii) a dataline of the first port to a corresponding dataline of the one or more other ports in response to the first port and the one or more other ports accessing a common address.