摘要:
A method for producing extreme ultraviolet light includes producing a target material at a target location; supplying pump energy to a gain medium of at least one optical amplifier that has an amplification band to produce an amplified light beam; propagating the amplified light beam through the gain medium using one or more optical components of a set of optical components; delivering the amplified light beam to the target location using one or more optical components of the optical component set; producing with a guide laser a guide laser beam that has a wavelength outside of the amplification band of the gain medium and inside the wavelength range of the optical components; and directing the guide laser beam through the optical component set to thereby align one or more optical components of the optical component set.
摘要:
An EUV light source device is described herein which may comprise a laser beam travelling along a beam path, at least a portion of the beam path aligned along a linear axis; a material for interaction with the laser beam at an irradiation site to create an EUV light emitting plasma; a first reflector having a focal point, the first reflector positioned with the focal point on the linear axis, the first reflector receiving laser light along the beam path; and a second reflector receiving laser light reflected by the first reflector and directing the laser light toward the irradiation site.
摘要:
An EUV light source device is described herein which may comprise a laser beam travelling along a beam path, at least a portion of the beam path aligned along a linear axis; a material for interaction with the laser beam at an irradiation site to create an EUV light emitting plasma; a first reflector having a focal point, the first reflector positioned with the focal point on the linear axis, the first reflector receiving laser light along the beam path; and a second reflector receiving laser light reflected by the first reflector and directing the laser light toward the irradiation site.
摘要:
A method for producing extreme ultraviolet light includes producing a target material at a target location; supplying pump energy to a gain medium of at least one optical amplifier that has an amplification band to produce an amplified light beam; propagating the amplified light beam through the gain medium using one or more optical components of a set of optical components; delivering the amplified light beam to the target location using one or more optical components of the optical component set; producing with a guide laser a guide laser beam that has a wavelength outside of the amplification band of the gain medium and inside the wavelength range of the optical components; and directing the guide laser beam through the optical component set to thereby align one or more optical components of the optical component set.
摘要:
An extreme-ultraviolet (EUV) light source comprising an optic, a target material, and a laser beam passing through said optic along a beam path to irradiate said target material. The EUV light source further includes a system generating a gas flow directed toward said target material along said beam path, said system having a tapering member surrounding a volume and a plurality of gas lines, each gas line outputting a gas stream into said volume.
摘要:
A filter is used in a target material supply apparatus and includes a sheet having a first flat surface and a second opposing flat surface, and a plurality of through holes. The first flat surface is in fluid communication with a reservoir that holds a target mixture that includes a target material and non-target particles. The through holes extend from the second flat surface and are fluidly coupled at the second flat surface to an orifice of a nozzle. The sheet has a surface area that is exposed to the target mixture, the exposed surface area being at least a factor of one hundred less than an exposed surface area of a sintered filter having an equivalent transverse extent to that of the sheet.
摘要:
As disclosed herein, in a first aspect, a device may comprise: an oscillator producing a light output on a beam path; a target material for interaction with light on the beam path at an irradiation site; a beam delay on the beam path the beam delay having a beam folding optical arrangement; and a switch positioned along the beam path and interposed between the oscillator and the beam delay; the switch closable to divert at least a portion of light on the beam path from the beam path, the switch having close time, t1 and the beam path having a length, L1, along the path from the switch to the irradiation site; with t1
摘要:
A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.
摘要:
An extreme ultraviolet light system includes a drive laser system that produces an amplified light beam; a target material delivery system configured to produce a target material at a target location; a beam delivery system configured to receive the amplified light beam emitted from the drive laser system and to direct the amplified light beam toward the target location; and a metrology system. The beam delivery system includes converging lens configured and arranged to focus the amplified light beam at the target location. The metrology system includes a light collection system configured to collect a portion of the amplified light beam reflected from the converging lens and a portion of a guide laser beam reflected from the converging lens. The light collection system includes a dichroic optical device configured to optically separate the portions.
摘要:
A method and apparatus may comprise a line narrowed pulsed excimer or molecular fluorine gas discharge laser system which may comprise a seed laser oscillator producing an output comprising a laser output light beam of pulses which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a line narrowing module within a first oscillator cavity; a laser amplification stage containing an amplifying gain medium in a second gas discharge excimer or molecular fluorine laser chamber receiving the output of the seed laser oscillator and amplifying the output of the seed laser oscillator to form a laser system output comprising a laser output light beam of pulses, which may comprise a ring power amplification stage.