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    Method for endpointing CVD chamber cleans following ultra low-k film treatments
    1.
    发明授权
    Method for endpointing CVD chamber cleans following ultra low-k film treatments 失效
    用于超低k膜处理后终点CVD室清洁的方法

    公开(公告)号：US07479191B1

    公开(公告)日：2009-01-20

    申请号：US11112741

    申请日：2005-04-22

    申请人： William R. Entley ,  John G. Langan ,  Amith Murali ,  Kathleen Bennett

    发明人： William R. Entley ,  John G. Langan ,  Amith Murali ,  Kathleen Bennett

    IPC分类号： B08B3/12 ,  B08B6/00 ,  B08B7/00 ,  B08B7/02

    CPC分类号： B08B7/0035 ,  C23C16/4405 ,  C23C16/52

    摘要： Methods of determining the endpoint of cleaning residues from the internal surfaces of a chemical vapor deposition chamber are described. The methods are especially useful for determining when organic-based residues deposited from an ultra low-k film precursor deposition are removed from the chamber. The methods involve cleaning the chamber with a plasma comprising fluorine and oxygen while monitoring the intensity of the optical emission lines of one or more atomic or molecular species that correlate to the removal of the organic-based residues. Techniques and apparatuses for monitoring different appropriate emission lines are described. Methods of the invention can be used to prevent particle contamination during CVD operations following ultra low-k film precursor depositions and improve wafer throughput in manufacturing environments.

    摘要翻译： 描述了确定化学气相沉积室内表面清洗残留物终点的方法。 该方法对于确定从超低k膜前体沉积物沉积的基于有机物的残留物是否从室中移出是特别有用的。 所述方法包括用包括氟和氧的等离子体清洁室，同时监测与去除有机基残余物相关的一种或多种原子或分子物质的光发射谱线的强度。 描述用于监测不同适当发射线的技术和装置。 本发明的方法可以用于在超低k膜前体沉积之后的CVD操作期间防止颗粒污染，并且在制造环境中提高晶片生产量。

    In situ plasma process to remove fluorine residues from the interior surfaces of a CVD reactor
    2.
    发明授权
    In situ plasma process to remove fluorine residues from the interior surfaces of a CVD reactor 有权
    从CVD反应器的内表面去除氟残留物的原位等离子体工艺

    公开(公告)号：US06872323B1

    公开(公告)日：2005-03-29

    申请号：US10003908

    申请日：2001-11-01

    申请人： William R. Entley ,  John G. Langan ,  Randy Hall

    发明人： William R. Entley ,  John G. Langan ,  Randy Hall

    IPC分类号： B08B7/00 ,  C23C16/44 ,  B08B9/00

    CPC分类号： C23C16/4405 ,  B08B7/00 ,  Y10S438/905

    摘要： In accordance with an embodiment of the present intention, a fluorine residue removing method includes: supplying an oxygen-containing gas and a hydrogen-containing gas into a CVD chamber; producing a plasma of a mixture of the oxygen-containing gas and the-hydrogen containing gas, so that the plasma reacts with the fluorine residue, exothermically generating water; and evacuating from the CVD chamber a product of the reaction between the plasma and the fluorine residue. For the hydrogen-containing gas, NH3 is often used, and for the oxygen-containing gas, N2O, O2, or air is used. Exemplary mixtures of the oxygen-containing and the hydrogen-containing gases include 70 mol % N2O/NH3, 50 mol % N2O/NH3, and 52 mol % O2/NH3. An inert gas, such as He, Ne, Ar, or Kr, can be optionally supplied into the chamber to stabilize the plasma.

    摘要翻译： 根据本发明的一个实施方案，氟残渣除去方法包括：向CVD室供给含氧气体和含氢气体; 产生含氧气体和含氢气体的混合物的等离子体，使得等离子体与氟残留物反应，放热产生水; 并从CVD室排出等离子体和氟残留物之间的反应的产物。 对于含氢气体，通常使用NH 3，对于含氧气体，使用N2O，O2或空气。 含氧和含氢气体的示例性混合物包括70mol％N 2 O / NH 3，50mol％N 2 O / NH 3和52mol％O 2 / NH 3。 惰性气体，例如He，Ne，Ar或Kr可以任选地供应到室中以稳定等离子体。