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公开(公告)号：US3979490A
公开(公告)日：1976-09-07
申请号：US417380
申请日：1973-11-19
申请人： Wolfgang Dietze , Konrad Reuschel , Andreas Kasper
发明人： Wolfgang Dietze , Konrad Reuschel , Andreas Kasper
摘要： For the manufacture of tubular bodies of semiconductor material, particularly of silicon, by the precipitation of a layer in the form of a hollow cylinder on a rod or tube-shaped, electrically heated carrier in a reaction gas suitable for the deposition of the semiconductor in question, with subsequent separation of the semiconductor layer from the carrier, the carrier is differentially heated in such a manner that the generated hollow-cylinder layer is given an annular, bead-like reinforcement; the separation of the tube obtained into parts is achieved by a cut made within the reinforcement.
摘要翻译： 对于制造半导体材料，特别是硅的管状体，通过将中空圆筒形式的层沉淀在适于半导体沉积的反应气体中的棒状或管状电加热载体上 问题是随着半导体层与载体的分离，载体以这样一种方式进行差分加热，使得产生的中空圆筒层具有环形的珠状加强件; 通过在加强件内部制成的切口来实现将获得的管分离成部分。
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公开(公告)号：US4148931A
公开(公告)日：1979-04-10
申请号：US900896
申请日：1978-04-28
申请人： Konrad Reuschel , Wolfgang Dietze , Ulrich Rucha
发明人： Konrad Reuschel , Wolfgang Dietze , Ulrich Rucha
CPC分类号： C23C16/52 , C01B33/035 , C23C16/22 , C23C16/4412
摘要： A semiconductor material, such as elemental silicon, is deposited on heated rod-shaped mandrels from a reactive gas stream capable of pyrolytically depositing silicon wherein the gas stream is regulated in such a manner that the silicon deposition rate remains constant per cubic centimeter of mandrel surface throughout the deposition process.
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3.发明授权Process for depositing elemental silicon semiconductor material from a gas phase 失效从气相中沉积元素硅半导体材料的工艺
公开(公告)号：US4125643A
公开(公告)日：1978-11-14
申请号：US774636
申请日：1977-03-04
申请人： Konrad Reuschel , Wolfgang Dietze , Ulrich Rucha
发明人： Konrad Reuschel , Wolfgang Dietze , Ulrich Rucha
IPC分类号： C01B33/02 , C01B33/035 , C23C16/22 , C23C16/24 , C23C16/44 , C23C16/52 , H01L21/205 , B05D5/12 , B01J17/28
CPC分类号： C23C16/24 , C01B33/035 , C23C16/4412 , C23C16/52 , Y10S438/935
摘要： A semiconductor material, such as elemental silicon, is deposited on heated rod-shaped mandrels from a reactive gas stream capable of pyrolytically depositing silicon wherein the gas stream is regulated in such a manner that the silicon deposition rate remains constant per cubic centimeter of mandrel surface throughout the deposition process.
摘要翻译： 将诸如元素硅的半导体材料从能够热解沉积硅的反应性气流中沉积在加热的棒状心轴上，其中气流以这样的方式调节，使得硅沉积速率保持恒定，每立方厘米的心轴表面 在整个沉积过程中。
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公开(公告)号：US4034705A
公开(公告)日：1977-07-12
申请号：US570040
申请日：1975-04-21
申请人： Wolfgang Dietze , Andreas Kasper , Ulrich Rucha
发明人： Wolfgang Dietze , Andreas Kasper , Ulrich Rucha
摘要： A technique for producing one or more shaped bodies of semiconductor material using the steps of depositing a layer of the semiconductor material from the gas phase onto the outer surface of a heated, hollow carrier body, or onto the mutually remote surfaces of two carrier bodies spaced from one another, and thereafter removing the carrier body or bodies from the layer or layers so formed. Each carrier body is heated indirectly by a heater body located within said hollow carrier body, or between said spaced carrier bodies, and heated to a temperature above the deposition temperature of the semiconductor material.
摘要翻译： 一种用于制造一种或多种半导体材料成形体的技术，其使用以下步骤：将半导体材料层从气相沉积到加热的中空载体主体的外表面上，或者在两个承载体间隔开的相互远离的表面上 并且之后从如此形成的层或层去除载体主体或本体。 每个承载体被位于所述中空载体内的加热器主体或所述间隔开的载体之间间接加热，并被加热到高于半导体材料沉积温度的温度。
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公开(公告)号：US3943218A
公开(公告)日：1976-03-09
申请号：US369830
申请日：1973-06-14
申请人： Wolfgang Dietze , Andreas Kasper
发明人： Wolfgang Dietze , Andreas Kasper
摘要： A method of producing shaped hollow semiconductor members, as of silicon or silicon carbide by depositing a select semiconductor material from a gaseous compound onto a heated graphite substrate which is first heat-treated above 1300.degree. C. in a flowing gas atmosphere, preferably a mixture of H.sub.2 and SiHCl.sub.3 so as to modify the surface characteristics of the substrate whereby the deposited semiconductor material does not interact with the substrate so that the substrate may be reused.
摘要翻译： 一种通过从气态化合物沉积选择性半导体材料到加热的石墨基底上而形成硅或碳化硅的成形中空半导体元件的方法，该加热石墨基底首先在1300℃以上的热气氛中在流动的气体气氛中优选混合 的H 2和SiHCl 3，以便改变衬底的表面特性，由此沉积的半导体材料不与衬底相互作用，使得衬底可以被再次使用。
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6.发明授权
公开(公告)号：US4015922A
公开(公告)日：1977-04-05
申请号：US658892
申请日：1976-02-18
申请人： Wolfgang Dietze , Ronrad Reuschel , Andreas Kasper
发明人： Wolfgang Dietze , Ronrad Reuschel , Andreas Kasper
摘要： For the manufacture of tubular bodies of semiconductor material, particularly of silicon, by the precipitation of a layer in the form of a hollow cylinder on a rod or tube-shaped,electrically heated carrier in a reaction gas suitable for the deposition of the semiconductor in question, with subsequent separation of the semiconductor layer from the carrier, the carrier is differentially heated in such a manner that the generated hollow-cylinder layer is given an annular, bead-like reinforcement; the separation of the tube obtained into parts is achieved by a cut made within the reinforcement.
摘要翻译： 对于制造半导体材料，特别是硅的管状体，通过将中空圆筒形式的层沉淀在适于半导体沉积的反应气体中的棒状或管状电加热载体上 问题是随着半导体层与载体的分离，载体以这样一种方式进行差分加热，使得产生的中空圆筒层具有环形的珠状加强件; 通过在加强件内部制成的切口来实现将获得的管分离成部分。
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公开(公告)号：US4035460A
公开(公告)日：1977-07-12
申请号：US579607
申请日：1975-05-21
申请人： Wolfgang Dietze , Andreas Kasper , Ulrich Rucha
发明人： Wolfgang Dietze , Andreas Kasper , Ulrich Rucha
摘要： A technique for producing one or more shaped bodies of semiconductor material using the steps of depositing a layer of the semiconductor material from the gas phase onto the outer surface of a heated, hollow carrier body, or onto the mutually remote surfaces of two carrier bodies spaced from one another, and thereafter removing the carrier body or bodies from the layer or layers so formed. Each carrier body is heated indirectly by a heater body located within said hollow carrier body, or between said spaced carrier bodies, and heated to a temperature above the deposition temperature of the semiconductor material.
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公开(公告)号：US4475206A
公开(公告)日：1984-10-02
申请号：US478289
申请日：1983-03-24
申请人： Wolfgang Dietze , Jurgen Schafer
发明人： Wolfgang Dietze , Jurgen Schafer
IPC分类号： C01B33/02 , C01B33/025 , F27D3/15 , F27D3/14
CPC分类号： F27D3/1518
摘要： A method for tapping a furnace contains a tappable melt of silicon dioxide to be reduced to silicon with carbon, which comprises providing a graphite tap pipe on the furnace, and electrically heating the tap pipe to cause liquid silicon to flow out of the pipe, and a device for carrying out the method.
摘要翻译： 一种用于窑炉的方法包括一个可以用碳还原成硅的二氧化硅熔体，它包括在炉子上提供一个石墨自来水管，并对该管道进行电加热，使液体硅流出管道; 用于执行该方法的装置。
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公开(公告)号：US4345142A
公开(公告)日：1982-08-17
申请号：US950452
申请日：1978-10-11
申请人： Wolfgang Dietze
发明人： Wolfgang Dietze
IPC分类号： C01B33/02 , C01B33/035 , C23C16/01 , C23C16/22 , C23C18/12 , C30B31/10 , C30B31/12 , F27B5/14 , H01C1/14 , H05B3/10
CPC分类号： C23C16/22 , C23C16/01 , C30B31/10 , C30B31/12 , Y10T428/1393
摘要： Directly heatable tubular semiconductor bodies are produced by pyrolytically depositing a continuous layer of silicon or silicon carbide from a thermally decomposable silicon compound onto a heated graphite mandrel, non-destructively removing the so-deposited tubular body from the mandrel, applying a dopant-containing lacquer or the like onto select outer surface portions of such tubular body and subjecting the so-coated tubular body to diffusion conditions sufficient to dope the select outer body portions of the body and render such body directly heatable via an applied electrical current.
摘要翻译： 通过将热可分解的硅化合物的连续的硅或碳化硅层热解沉积到加热的石墨心轴上，直接可加热的管状半导体本体，不间断地从芯棒上除去所沉积的管状体，施加含掺杂剂的漆 或类似物放置在这种管状体的选定的外表面部分上，并使经涂覆的管状体经受足以掺杂身体的选择外部身体部分并使得这种身体经由所施加的电流直接加热的扩散条件。
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公开(公告)号：US4093201A
公开(公告)日：1978-06-06
申请号：US638299
申请日：1975-12-08
CPC分类号： C23C16/01 , C23C16/22 , C30B31/14 , Y10S206/832 , Y10S269/903
摘要： A support structure composed of Si or SiC for supporting semiconductor crystal discs during annealing or doping thereof. A somewhat tube-shaped member having at least one flat side is formed by thermal deposition of a gaseous silicon compound onto a similarly shaped carrier member and the tube-shaped member is then cut and mechanically processed in directions parallel and perpendicular to the axes of the tube to form a support structure having a flat base and upwardly extending curved side walls.
摘要翻译： 由Si或SiC组成的支撑结构，用于在退火或掺杂期间支撑半导体晶体盘。 通过将气态硅化合物热沉积到类似形状的载体构件上形成具有至少一个平坦侧面的稍微管状的构件，然后将管状构件切割并在垂直于 以形成具有平坦基部和向上延伸的弯曲侧壁的支撑结构。
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