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14 条记录 (耗时 0.019 秒)

    Method for the manufacture of tubular bodies of semiconductor material
    1.
    发明授权
    Method for the manufacture of tubular bodies of semiconductor material 失效
    用于制造半导体材料管状体的方法

    公开(公告)号：US3979490A

    公开(公告)日：1976-09-07

    申请号：US417380

    申请日：1973-11-19

    申请人： Wolfgang Dietze ,  Konrad Reuschel ,  Andreas Kasper

    发明人： Wolfgang Dietze ,  Konrad Reuschel ,  Andreas Kasper

    IPC分类号： C23C16/01 ,  C23C16/22 ,  C30B23/00 ,  B01J17/30 ,  B01J17/32

    CPC分类号： C23C16/22 ,  C23C16/01 ,  C30B23/00

    摘要： For the manufacture of tubular bodies of semiconductor material, particularly of silicon, by the precipitation of a layer in the form of a hollow cylinder on a rod or tube-shaped, electrically heated carrier in a reaction gas suitable for the deposition of the semiconductor in question, with subsequent separation of the semiconductor layer from the carrier, the carrier is differentially heated in such a manner that the generated hollow-cylinder layer is given an annular, bead-like reinforcement; the separation of the tube obtained into parts is achieved by a cut made within the reinforcement.

    摘要翻译： 对于制造半导体材料，特别是硅的管状体，通过将中空圆筒形式的层沉淀在适于半导体沉积的反应气体中的棒状或管状电加热载体上 问题是随着半导体层与载体的分离，载体以这样一种方式进行差分加热，使得产生的中空圆筒层具有环形的珠状加强件; 通过在加强件内部制成的切口来实现将获得的管分离成部分。

    Process for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystal
    4.
    发明授权
    Process for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystal 失效
    具有沿着这种单晶的径向横截面的选择的外围掺杂剂浓度的产生磷掺杂硅单晶的方法

    公开(公告)号：US4126509A

    公开(公告)日：1978-11-21

    申请号：US735583

    申请日：1976-10-26

    申请人： Wolfgang Keller ,  Herbert Kramer ,  Konrad Reuschel

    发明人： Wolfgang Keller ,  Herbert Kramer ,  Konrad Reuschel

    IPC分类号： C30B13/12 ,  C30B13/06 ,  C30B29/06 ,  H01L21/18 ,  B01J17/12 ,  B01J17/40

    CPC分类号： C30B13/06

    摘要： A process for producing phosphorous-doped silicon monocrystals having a select peripheral depletion or enrichment of dopant atoms along the radial direction of such monocrystals comprises providing a silicon monocrystalline rod homogeneously doped with phosphorous, as by neutron doping, and subjecting such homogeneously doped monocrystalline rod to a peripheral zone melt cycle in a select atmosphere such that the peripheral melt zone depth within the monocrystalline rod is controlled so as to be less than the radius of the rod in accordance with the desired peripheral dopant concentration in the ultimately attained rod.

    摘要翻译： 具有沿这种单晶的径向方向选择外围缺陷或富集掺杂剂原子的磷掺杂硅单晶的方法包括提供均匀掺杂磷的硅单晶棒，如通过中子掺杂，并将这种均匀掺杂的单晶棒 在选择气氛中的周边区域熔融循环，使得单晶棒内的外围熔融区深度被控制为小于根据最终获得的棒中期望的外围掺杂剂浓度的棒的半径。