公开(公告)号：US20110180820A1

公开(公告)日：2011-07-28

申请号：US13077395

申请日：2011-03-31

Applicant: Won Cheol SEO ,  Sum Geun LEE

Inventor： Won Cheol SEO ,  Sum Geun LEE

IPC: H01L33/08 ,  H01L33/46

CPC classification number: H01L25/0753 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/73265 ,  H01L2224/92247

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell.

公开(公告)号：US20110156064A1

公开(公告)日：2011-06-30

申请号：US12950676

申请日：2010-11-19

Applicant: Won Cheol SEO ,  Sum Geun LEE

Inventor： Won Cheol SEO ,  Sum Geun LEE

IPC: H01L33/46

CPC classification number: H01L25/0753 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/73265 ,  H01L2224/92247

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell.

Abstract translation: 公开了发光器件及其制造方法。 发光装置包括：基板; 第一和第二发光单元，每个包括第一半导体层，有源层和第二半导体层; 以及位于第一和第二发光单元和基板之间的连接器，以将第一和第二发光单元彼此电连接。 连接器从第一发光单元的第二半导体层延伸穿过衬底，并且穿过第二半导体层的中心区域和第二发光单元的有源层，以与第二发光单元的第一半导体层接触 。

公开(公告)号：US20120007044A1

公开(公告)日：2012-01-12

申请号：US13240501

申请日：2011-09-22

Applicant: Won Cheol SEO ,  Sum Geun LEE

Inventor： Won Cheol SEO ,  Sum Geun LEE

IPC: H01L27/15 ,  H01L33/06

CPC classification number: H01L25/0753 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/73265 ,  H01L2224/92247

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell.

Abstract translation: 公开了一种发光器件及其制造方法。 发光装置包括：基板; 第一和第二发光单元，每个包括第一半导体层，有源层和第二半导体层; 以及位于第一和第二发光单元和基板之间的连接器，以将第一和第二发光单元彼此电连接。 连接器从第一发光单元的第二半导体层延伸穿过衬底，并且穿过第二半导体层的中心区域和第二发光单元的有源层，以与第二发光单元的第一半导体层接触 。

公开(公告)号：US20130009197A1

公开(公告)日：2013-01-10

申请号：US13617810

申请日：2012-09-14

Applicant: Won Cheol SEO ,  Dae Sung KAL ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

Inventor： Won Cheol SEO ,  Dae Sung KAL ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

IPC: H01L33/36

CPC classification number: H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract translation: 本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层 垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。

公开(公告)号：US20110114990A1

公开(公告)日：2011-05-19

申请号：US12941536

申请日：2010-11-08

Applicant: Kyoung Wan KIM ,  Soo Young MOON ,  Kyu Ho LEE ,  Yeo Jin YOON ,  Jeong Hee YANG ,  Won Cheol SEO

Inventor： Kyoung Wan KIM ,  Soo Young MOON ,  Kyu Ho LEE ,  Yeo Jin YOON ,  Jeong Hee YANG ,  Won Cheol SEO

IPC: H01L33/62

CPC classification number: H01L33/38 ,  H01L33/20

Abstract: An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.

Abstract translation: 本发明的一个示例性实施例公开了一种发光二极管，其包括具有彼此相对的第一边缘和第二边缘的基板，设置在基板上的发光结构，所述发光结构包括第一半导体层和第二半导体 布置在第一半导体层的上表面上的多个第一电极焊盘，布置在第一边缘附近的第一电极焊盘，布置在第二半导体层上的多个第二电极焊盘，布置在第二半导体层上的第二电极焊盘 在第二边缘附近，多个第一延伸部，每个第一延伸部从第一电极焊盘延伸，以及多个第二延伸部，每个第二延伸部从第二电极焊盘延伸。 第一延伸部包括在从第一边缘到第二边缘的方向上延伸的侵入部分，其中入侵部分彼此间隔开并且不与第二电极焊盘连接。 此外，第二延伸部包括在从第二边缘到第一边缘的方向上延伸的侵入部分，其中第一延伸入侵部分各自延伸到两个第二延伸入侵部分之间的区域中。

公开(公告)号：US20100163900A1

公开(公告)日：2010-07-01

申请号：US12624011

申请日：2009-11-23

Applicant: Won Cheol SEO ,  Kwang Choong KIM ,  Kyung Hee YE

Inventor： Won Cheol SEO ,  Kwang Choong KIM ,  Kyung Hee YE

IPC: H01L33/00 ,  H01L21/30

CPC classification number: H01L33/007 ,  H01L27/156

Abstract: Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.

Abstract translation: 公开了具有多个非极性发光单元的发光器件及其制造方法。 该方法包括制备具有上表面的蓝宝石或碳化硅的第一衬底，其具有r面，a面或m面。 第一衬底在其上表面上具有条状的抗生长图案，以及在抗生长图案之间具有c面侧壁的凹陷区域。 在具有凹陷区域的衬底上生长氮化物半导体层，并且将氮化物半导体层图案化以形成彼此分离的发光元件。 因此，提供了具有优异的晶体质量的非极性发光单元的发光器件。

公开(公告)号：US20120104424A1

公开(公告)日：2012-05-03

申请号：US13345348

申请日：2012-01-06

Applicant: Won Cheol SEO ,  Kwang Choong KIM ,  Kyung Hee YE

Inventor： Won Cheol SEO ,  Kwang Choong KIM ,  Kyung Hee YE

IPC: H01L33/08 ,  H01L33/60

CPC classification number: H01L33/007 ,  H01L27/156

Abstract: Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.

Abstract translation: 公开了具有多个非极性发光单元的发光器件及其制造方法。 该方法包括制备具有上表面的蓝宝石或碳化硅的第一衬底，其具有r面，a面或m面。 第一衬底在其上表面上具有条状的抗生长图案，以及在抗生长图案之间具有c面侧壁的凹陷区域。 在具有凹陷区域的衬底上生长氮化物半导体层，并且将氮化物半导体层图案化以形成彼此分离的发光元件。 因此，提供了具有优异的晶体质量的非极性发光单元的发光器件。

公开(公告)号：US20110062459A1

公开(公告)日：2011-03-17

申请号：US12882406

申请日：2010-09-15

Applicant: Dae Sung KAL ,  Won Cheol SEO ,  Jang Woo LEE ,  Jin Cheol SHIN ,  Jong Kyu KIM ,  Sang Ki JIN ,  So Ra LEE

Inventor： Dae Sung KAL ,  Won Cheol SEO ,  Jang Woo LEE ,  Jin Cheol SHIN ,  Jong Kyu KIM ,  Sang Ki JIN ,  So Ra LEE

IPC: H01L33/08

CPC classification number: H01L27/156 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention discloses an alternating current (AC) light emitting diode (LED) having half-wave light emitting cells and full-wave light emitting cells. The AC LED has a plurality of light emitting cells electrically connected between bonding pads on a single substrate. The AC LED includes a first row of half-wave light emitting cells each having an anode terminal and a cathode terminal, a second row of full-wave light emitting cells each having an anode terminal and a cathode terminal, and a third row of half-wave light emitting cells each having an anode terminal and a cathode terminal. In the AC LED, the second row is arranged between the first row and the third row, and the third row includes a pair of light emitting cells that share a cathode terminal with each other. The cathode terminal shared by the pair of light emitting cells in the third row is electrically connected to the anode terminal of a corresponding light emitting cell of the half-wave light emitting cells in the first row through a conductor that is electrically insulated from the full-wave light emitting cells in the second row.

Abstract translation: 本发明公开了一种具有半波发光单元和全波发光单元的交流（AC）发光二极管（LED）。 AC LED具有电连接在单个基板上的焊盘之间的多个发光单元。 AC LED包括具有阳极端子和阴极端子的第一排半波发光单元，具有阳极端子和阴极端子的第二排全波发光单元，以及第三排半波发光单元 每个具有阳极端子和阴极端子的发光单元。 在AC LED中，第二行布置在第一行和第三行之间，第三行包括彼此共享阴极端子的一对发光单元。 由第三行中的一对发光单元共享的阴极端子通过与整体电绝缘的导体电连接到第一行中的半波发光单元的对应的发光单元的阳极端子 - 第二排发光单元。

公开(公告)号：US20120135551A1

公开(公告)日：2012-05-31

申请号：US13368122

申请日：2012-02-07

Applicant: Won Cheol SEO ,  Chang Youn KIM ,  Yeo Jin YOON

Inventor： Won Cheol SEO ,  Chang Youn KIM ,  Yeo Jin YOON

IPC: H01L33/62 ,  H01L33/60

CPC classification number: H01L33/0079 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/46 ,  H01L33/641 ,  H01L2224/49107

Abstract: Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.

Abstract translation: 这里公开了一种发光二极管。 发光二极管包括支撑衬底，形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。 半导体层包括第一导电类型的上半导体层，有源层和第二导电类型的下半导体层。 半导体层在牺牲衬底上生长，并且支撑衬底与牺牲衬底是均匀的。

公开(公告)号：US20110163346A1

公开(公告)日：2011-07-07

申请号：US12974917

申请日：2010-12-21

Applicant: Won Cheol SEO ,  Dae Sung KAL ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

Inventor： Won Cheol SEO ,  Dae Sung KAL ,  Kyung Hee YE ,  Kyoung Wan KIM ,  Yeo Jin YOON

IPC: H01L33/42 ,  H01L33/36

CPC classification number: H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract translation: 本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层 垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。