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1.发明授权Method of fabricating light emitting diode using laser lift-off technique and laser lift-off apparatus having heater 有权使用激光剥离技术制造发光二极管的方法和具有加热器的激光剥离装置公开(公告)号：US08624159B2
公开(公告)日：2014-01-07
申请号：US13410884
申请日：2012-03-02
Applicant: Chang Youn Kim , Joon Hee Lee , Jong Kyun You , Hwa Mok Kim
Inventor： Chang Youn Kim , Joon Hee Lee , Jong Kyun You , Hwa Mok Kim
IPC: B23K26/02
CPC classification number: H01L33/0079
Abstract: An approach is provided for fabricating a light emitting diode using a laser lift-off apparatus. The approach includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature.
Abstract translation: 提供了一种使用激光剥离装置制造发光二极管的方法。 该方法包括在第一衬底上生长包括第一导电型化合物半导体层，有源层和第二导电型化合物半导体层的外延层，将具有不同于第一衬底的热膨胀系数不同的第二衬底 衬底，在第一衬底的高于室温的第一温度下到外延层，并且通过在第一衬底的高于室的第二温度下照射穿过第一衬底的激光束将第一衬底与外延层分离 温度不高于第一温度。
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公开(公告)号：US08410506B2
公开(公告)日：2013-04-02
申请号：US13077371
申请日：2011-03-31
Applicant: Chang Youn Kim , Joon Hee Lee , Jong Kyun You , Hong Chol Lim
Inventor： Chang Youn Kim , Joon Hee Lee , Jong Kyun You , Hong Chol Lim
IPC: H01L33/00
CPC classification number: H01L33/22 , H01L33/20 , H01L33/382
Abstract: Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.
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公开(公告)号：US08383433B2
公开(公告)日：2013-02-26
申请号：US13080116
申请日：2011-04-05
Applicant: Sum Geun Lee , Jin Cheol Shin , Jong Kyu Kim , Chang Youn Kim
Inventor： Sum Geun Lee , Jin Cheol Shin , Jong Kyu Kim , Chang Youn Kim
CPC classification number: H01L33/60 , H01L27/156 , H01L33/08 , H01L33/38 , H01L33/46
Abstract: Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.
Abstract translation: 本发明的示例性实施例公开了一种发光二极管（LED）及其制造方法。 LED包括衬底，布置在衬底上的半导体堆叠，所述半导体堆叠包括具有第一导电类型的上半导体层，有源层和具有第二导电类型的下半导体层，将半导体堆叠分离成的隔离沟槽 多个区域，设置在所述基板和所述半导体堆叠之间的连接器，所述连接器将所述多个区域彼此电连接，以及具有多层结构的分布式布拉格反射器（DBR），所述DBR布置在所述半导体堆叠和 连接器。 连接器通过DBR电连接到半导体堆叠，并且DBR的部分设置在隔离沟槽和连接器之间。
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公开(公告)号：US08288781B2
公开(公告)日：2012-10-16
申请号：US12570456
申请日：2009-09-30
Applicant: Won Cheol Seo , Joon Hee Lee , Jong Kyun You , Chang Youn Kim , Jin Cheul Shin , Hwa Mok Kim , Jang Woo Lee , Yeo Jin Yoon , Jong Kyu Kim
Inventor： Won Cheol Seo , Joon Hee Lee , Jong Kyun You , Chang Youn Kim , Jin Cheul Shin , Hwa Mok Kim , Jang Woo Lee , Yeo Jin Yoon , Jong Kyu Kim
IPC: H01L33/00
CPC classification number: H01L33/60 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括衬底。 多个发光单元设置在基板的顶部上以彼此间隔开。 每个发光单元包括第一上半导体层，有源层和第二下半导体层。 反射金属层位于基板和发光单元之间。 防止反射金属层暴露于外部。
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5.发明申请公开(公告)号：US20120021546A1
公开(公告)日：2012-01-26
申请号：US13137124
申请日：2011-07-21
Applicant: Chang Youn Kim , Shiro Sakai , Hwa Mok Kim , Joon Hee Lee , Soo Young Moon , Kyoung Wan Kim
Inventor： Chang Youn Kim , Shiro Sakai , Hwa Mok Kim , Joon Hee Lee , Soo Young Moon , Kyoung Wan Kim
IPC: H01L33/32
CPC classification number: H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/0079
Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.
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Patent Agency Ranking
公开(公告)号：US20110241050A1
公开(公告)日：2011-10-06
申请号：US13077254
申请日：2011-03-31
Applicant: Kyung Hee YE , Chang Youn KIM , Jin Cheol SHIN , Joon Hee LEE , Jong Kyun YOU , Hong Chol LIM
Inventor： Kyung Hee YE , Chang Youn KIM , Jin Cheol SHIN , Joon Hee LEE , Jong Kyun YOU , Hong Chol LIM
IPC: H01L33/46
CPC classification number: H01L33/46 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/387 , H01L33/42 , H01L33/44
Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.
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公开(公告)号：US20110241045A1
公开(公告)日：2011-10-06
申请号：US13018557
申请日：2011-02-01
Applicant: Kyung Hee YE , Chang Youn KIM , Jin Cheol SHIN , Joon Hee LEE , Jong Kyun YOU , Hong Chol LIM
Inventor： Kyung Hee YE , Chang Youn KIM , Jin Cheol SHIN , Joon Hee LEE , Jong Kyun YOU , Hong Chol LIM
IPC: H01L33/46
CPC classification number: H01L33/46 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/387 , H01L33/42 , H01L33/44
Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.
Abstract translation: 一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。
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公开(公告)号：US09136432B2
公开(公告)日：2015-09-15
申请号：US13997873
申请日：2011-12-06
Applicant: Jun Ho Yun , Ki Bum Nam , Joon Hee Lee , Chang Youn Kim , Hong Jae Yoo , Sung Hoon Hong
Inventor： Jun Ho Yun , Ki Bum Nam , Joon Hee Lee , Chang Youn Kim , Hong Jae Yoo , Sung Hoon Hong
CPC classification number: H01L33/14 , H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/405 , H01L33/44
Abstract: Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7×1018/cm3 and a thickness in the range of 5 to 10 um.
Abstract translation: 本文公开了一种高效率发光二极管。 发光二极管包括：位于支撑衬底上的半导体堆叠; 反射金属层，位于所述支撑基板和所述半导体堆叠之间，以与所述半导体堆叠的p型化合物半导体层欧姆接触并具有暴露所述半导体叠层的沟槽; 位于所述半导体叠层的n型化合物半导体层上的第一电极焊盘; 电极延伸部，其从所述第一电极焊盘延伸并定位在所述沟槽区域上; 以及介于所述第一电极焊盘和所述半导体堆叠之间的上绝缘层。 此外，n型化合物半导体层包括n型接触层，n型接触层的Si掺杂浓度为5〜7×1018 / cm3，厚度为5〜10μm。
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9.发明授权公开(公告)号：US08937327B2
公开(公告)日：2015-01-20
申请号：US13202210
申请日：2010-03-24
Applicant: Won Cheol Seo , Dae Sung Kal , Joon Hee Lee , Chang Youn Kim
Inventor： Won Cheol Seo , Dae Sung Kal , Joon Hee Lee , Chang Youn Kim
CPC classification number: H01L25/0753 , H01L27/153 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L33/641 , H01L2224/73265 , H01L2224/92247 , H01L2933/0016
Abstract: A light emitting device having a plurality of light emitting cells is disclosed. The light emitting device comprises a substrate; a plurality of light emitting cells positioned on the substrate to be spaced apart from one another, each of the light emitting cells comprising a p-type lower semiconductor layer, an active layer and an n-type upper semiconductor layer; p-electrodes positioned to be spaced apart from one another between the substrate and the light emitting cells, the respective p-electrodes being electrically connected to the corresponding lower semiconductor layers, each of the p-electrodes having an extension extending toward adjacent one of the light emitting cells; n-electrodes disposed on upper surfaces of the respective light emitting cells, wherein a contact surface of each of the n-electrodes electrically contacting with each light emitting cell exists both sides of any straight line that bisects the light emitting cell across the center of the upper surface of the light emitting cell; a side insulating layer for covering sides of the light emitting cells; and wires for connecting the p-electrodes and the n-electrodes, the wires being spaced apart from the sides of the light emitting cells by the side insulating layer.
Abstract translation: 公开了一种具有多个发光单元的发光器件。 发光器件包括衬底; 位于所述基板上的多个发光单元彼此间隔开，每个所述发光单元包括p型下半导体层，有源层和n型上半导体层; p电极被定位成在衬底和发光单元之间彼此间隔开，各个p电极电连接到相应的下半导体层，每个p电极具有延伸到相邻的一个 发光单元; 设置在各个发光单元的上表面上的n电极，其中与每个发光单元电接触的每个n电极的接触表面存在于将所述发光单元平分在所述发光单元的中心的任何直线的两侧 发光单元的上表面; 用于覆盖所述发光单元的侧面的侧绝缘层; 以及用于连接p电极和n电极的电线，电线通过侧绝缘层与发光单元的侧面间隔开。
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10.发明申请METHOD OF FABRICATING LIGHT EMITTING DIODE USING LASER LIFT-OFF TECHNIQUE AND LASER LIFT-OFF APPARATUS HAVING HEATER 有权使用激光提升技术制造发光二极管的方法和具有加热器的激光提升装置公开(公告)号：US20120160817A1
公开(公告)日：2012-06-28
申请号：US13410884
申请日：2012-03-02
Applicant: Chang Youn KIM , Joon Hee LEE , Jong Kyun YOU , Hwa Mok KIM
Inventor： Chang Youn KIM , Joon Hee LEE , Jong Kyun YOU , Hwa Mok KIM
IPC: B23K26/38
CPC classification number: H01L33/0079
Abstract: An approach is provided for fabricating a light emitting diode using a laser lift-off apparatus. The approach includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature.
Abstract translation: 提供了一种使用激光剥离装置制造发光二极管的方法。 该方法包括在第一衬底上生长包括第一导电型化合物半导体层，有源层和第二导电型化合物半导体层的外延层，将具有不同于第一衬底的热膨胀系数不同的第二衬底 衬底，在第一衬底的高于室温的第一温度下到外延层，并且通过在第一衬底的高于室的第二温度下照射穿过第一衬底的激光束将第一衬底与外延层分离 温度不高于第一温度。
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