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1.发明申请Photoreceptive layer including heterogeneous dyes and solar cell employing the same 审中-公开感光层包括异质染料和使用其的太阳能电池公开(公告)号：US20060165404A1
公开(公告)日：2006-07-27
申请号：US11271928
申请日：2005-11-14
申请人： Won-cheol Jung , Kyung-sang Cho , Jung-gyu Nam , Sang-cheol Park
发明人： Won-cheol Jung , Kyung-sang Cho , Jung-gyu Nam , Sang-cheol Park
IPC分类号： G03B7/099
CPC分类号： H01G9/2063 , H01G9/2031 , Y02E10/542
摘要： A photoreceptive layer including heterogeneous dyes is provided. The dye fill density is enhanced and light absorption is achieved at a broad wavelength range, which enables the beneficial utilization of the photoreceptive layer in a dye-sensitized solar cell.
摘要翻译： 提供了包含异质染料的感光层。 染料填充密度增强，并且在宽波长范围内实现光吸收，这使得能够有益地利用染料敏化太阳能电池中的感光层。
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2.发明申请PHOTORECEPTIVE LAYER INCLUDING HETEROGENEOUS DYES AND SOLAR CELL EMPLOYING THE SAME 审中-公开包括异构染料和使用其的太阳能电池的光电层公开(公告)号：US20120145244A1
公开(公告)日：2012-06-14
申请号：US13403406
申请日：2012-02-23
申请人： Won-cheol Jung , Kyung-sang Cho , Jung-gyu Nam , Sang-cheol Park
发明人： Won-cheol Jung , Kyung-sang Cho , Jung-gyu Nam , Sang-cheol Park
IPC分类号： H01L31/0216 , B05D5/06 , C09D7/12
CPC分类号： H01G9/2063 , H01G9/2031 , Y02E10/542
摘要： A photoreceptive layer including heterogeneous dyes is provided. The dye fill density is enhanced and light absorption is achieved at a broad wavelength range, which enables the beneficial utilization of the photoreceptive layer in a dye-sensitized solar cell.
摘要翻译： 提供了包含异质染料的感光层。 染料填充密度增强，并且在宽波长范围内实现光吸收，这使得能够有益地利用染料敏化太阳能电池中的感光层。
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3.发明授权Charge trap memory device comprising composite of nanoparticles and method of fabricating the charge trap memory device 有权包含纳米颗粒复合材料的电荷阱存储器件和制造电荷陷阱存储器件的方法公开(公告)号：US07482619B2
公开(公告)日：2009-01-27
申请号：US11517030
申请日：2006-09-07
申请人： Kwang-soo Seol , Shin-ae Jun , Eun-joo Jang , Jung-eun Lim , Kyung-sang Cho , Byung-ki Kim , Jae-ho Lee , Jae-young Choi
发明人： Kwang-soo Seol , Shin-ae Jun , Eun-joo Jang , Jung-eun Lim , Kyung-sang Cho , Byung-ki Kim , Jae-ho Lee , Jae-young Choi
IPC分类号： H01L29/06 , H01L31/00 , H01L29/788
CPC分类号： G11C16/0466 , B82Y10/00 , G11C2216/06 , H01L21/28273 , H01L29/42332 , H01L29/7881 , Y10S438/962
摘要： Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the charge trap memory device.
摘要翻译： 提供了一种电荷陷阱存储器件，其包括基板和包括由纳米颗粒的复合材料形成的电荷捕获层的栅极结构，以及制造电荷陷阱存储器件的方法。
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4.发明授权Particles having permanent dipole moment, films including the particles, and methods of preparing the films 有权具有永久偶极矩的颗粒，包括颗粒的膜，以及制备膜的方法公开(公告)号：US09174238B2
公开(公告)日：2015-11-03
申请号：US13017497
申请日：2011-01-31
申请人： Kyung-sang Cho , Dae-young Chung , Sang-jin Lee
发明人： Kyung-sang Cho , Dae-young Chung , Sang-jin Lee
摘要： A particle has a permanent dipole moment, a film includes the particle, and a method of forming the film includes aligning the particle on a surface. The particle has a permanent dipole moment and includes heterogeneous materials, wherein a positive pole is located in a first material and a negative pole is located in a second material different from the first material. The method includes aligning a particle such that the particle has one dipole moment direction. The film includes the aligned particles.
摘要翻译： 颗粒具有永久偶极矩，膜包括颗粒，并且形成膜的方法包括使颗粒在表面上对准。 颗粒具有永久偶极矩并且包括异质材料，其中正极位于第一材料中，负极位于不同于第一材料的第二材料中。 该方法包括使颗粒对准使得颗粒具有一个偶极矩方向。 该膜包括排列的颗粒。
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5.发明申请Charge trap memory device comprising composite of nanoparticles and method of fabricating the charge trap memory device 有权包含纳米颗粒复合物的电荷阱存储器件和制造电荷陷阱存储器件的方法公开(公告)号：US20070064468A1
公开(公告)日：2007-03-22
申请号：US11517030
申请日：2006-09-07
申请人： Kwang-soo Seol , Shin-ae Jun , Eun-joo Jang , Jung-eun Lim , Kyung-sang Cho , Byung-ki Kim , Jae-ho Lee , Jae-young Choi
发明人： Kwang-soo Seol , Shin-ae Jun , Eun-joo Jang , Jung-eun Lim , Kyung-sang Cho , Byung-ki Kim , Jae-ho Lee , Jae-young Choi
IPC分类号： G11C11/00
CPC分类号： G11C16/0466 , B82Y10/00 , G11C2216/06 , H01L21/28273 , H01L29/42332 , H01L29/7881 , Y10S438/962
摘要： Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the charge trap memory device.
摘要翻译： 提供了一种电荷陷阱存储器件，其包括基板和包括由纳米颗粒的复合材料形成的电荷捕获层的栅极结构，以及制造电荷陷阱存储器件的方法。
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6.发明授权Light-emitting device having enhanced luminescence by using surface plasmon resonance and method of fabricating the same 有权具有通过使用表面等离子体共振增强的发光的发光器件及其制造方法公开(公告)号：US08581230B2
公开(公告)日：2013-11-12
申请号：US12977195
申请日：2010-12-23
申请人： Tae-ho Kim , Chang-won Lee , Byoung-lyong Choi , Kyung-sang Cho
发明人： Tae-ho Kim , Chang-won Lee , Byoung-lyong Choi , Kyung-sang Cho
IPC分类号： H01L33/04
CPC分类号： H01L51/502 , H01L27/3211 , H01L51/5048 , H01L51/5262
摘要： A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer (“HIL”), a hole transport layer (“HTL”), an emitting layer, an electron transport layer (“ETL”), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode.
摘要翻译： 量子点发光装置包括基板，第一电极，空穴注入层（“HIL”），空穴传输层（“HTL”），发光层，电子传输层（“ETL”）， 埋在ETL中的多个纳米等离子体颗粒和第二电极。
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公开(公告)号：US08330142B2
公开(公告)日：2012-12-11
申请号：US12708664
申请日：2010-02-19
申请人： Kyung-sang Cho , Byoung-lyong Choi , Eun-kyung Lee , Tae-ho Kim , Sang-jin Lee
发明人： Kyung-sang Cho , Byoung-lyong Choi , Eun-kyung Lee , Tae-ho Kim , Sang-jin Lee
IPC分类号： H01L21/02
CPC分类号： H01L51/502 , B82Y20/00 , B82Y30/00 , H01L33/14 , H01L51/0003 , H01L51/0007 , H01L51/5036 , H01L51/5048 , H01L51/5096
摘要： A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.
摘要翻译： 量子点发光器件包括： 衬底，设置在衬底上的第一电极，与第一电极基本相对设置的第二电极，设置在第一电极和第二电极之间的第一电荷传输层，设置在第一电荷传输层之间的量子点发光层 和第一电极和第二电极中的一个以及设置在量子点发光层和第一电荷传输层之间的至少一个量子点包括层，其中所述至少一个量子点包含层具有与 量子点发光层的能带电平。
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8.发明申请公开(公告)号：US20080090326A1
公开(公告)日：2008-04-17
申请号：US11907472
申请日：2007-10-12
IPC分类号： H01L45/00
CPC分类号： H01L45/1683 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1616
摘要： A method of surface treating a phase change layer may include, before forming the phase change layer, forming a coating layer on a surface of a bottom layer on which the phase change layer is to be formed, wherein the coating layer has a chemical structure for contributing to the adherence of an alkyl radical to the surface of the bottom layer. After forming the coating layer, the phase change layer may be formed using an atomic layer deposition (ALD) method.
摘要翻译： 表面处理相变层的方法可以包括在形成相变层之前，在要形成相变层的底层的表面上形成涂层，其中所述涂层具有用于 有助于将烷基粘附到底层的表面。 在形成涂层之后，可以使用原子层沉积（ALD）方法形成相变层。
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公开(公告)号：US20060238103A1
公开(公告)日：2006-10-26
申请号：US11405555
申请日：2006-04-18
申请人： Jae-young Choi , Byung-ki Kim , Seoung-jae Im , Eun-sung Lee , Kyung-sang Cho , Eun-Joo Jang
发明人： Jae-young Choi , Byung-ki Kim , Seoung-jae Im , Eun-sung Lee , Kyung-sang Cho , Eun-Joo Jang
IPC分类号： H01J1/62
CPC分类号： B82Y20/00 , G02F1/133617 , G02F2202/36
摘要： Provided is a photo-luminescence (PL) LCD including: electrodes that are disposed on bottom and top surfaces of front and rear substrate and create an electric field in liquid crystals (LCs); a nano-dot (ND) PL layer that is disposed on the bottom surface of the front substrate and emits light when irradiated with ultraviolet (UV) light, and a UV backlight unit that is located behind the rear substrate and supplying UV light to the ND PL layer. The UV backlight unit is excited by blue UV light having a wavelength range of 360 to 460 nm to emit light. The PD LCD having the above-mentioned structure suppresses absorption of UV light by LC and degradation of the LC while providing high light efficiency.
摘要翻译： 提供了一种光发光（PL）LCD，包括：设置在前基板和后基板的底表面和顶表面上并在液晶（LC）中产生电场的电极; 一个纳米点（ND）PL层，其设置在前基板的底表面上，并且在用紫外线（UV）光照射时发出光;以及UV背光单元，其位于后基板的后面，并将UV光提供给 ND PL层。 UV背光单元由具有360至460nm波长范围的蓝色UV光激发，以发光。 具有上述结构的PD LCD通过LC抑制UV光的吸收和LC的降低，同时提供高的光效。
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公开(公告)号：US08847240B2
公开(公告)日：2014-09-30
申请号：US13408279
申请日：2012-02-29
申请人： Dae-young Chung , Kyung-sang Cho , Tae-ho Kim , Byoung-lyong Choi
发明人： Dae-young Chung , Kyung-sang Cho , Tae-ho Kim , Byoung-lyong Choi
CPC分类号： H01L51/52 , H01L51/0094
摘要： An optoelectronic device is provided including an element that forms a dipole moment between an active layer and a charge transport layer. The optoelectronic device may include an active layer between a first electrode and a second electrode, a first charge transport layer between the first electrode and the active layer, and a dipole layer between the active layer and the first charge transport layer. A second charge transport layer may be further provided between the second electrode and the active layer. The second dipole layer may be further provided between the second charge transport layer and the active layer.
摘要翻译： 提供了一种光电子器件，其包括在有源层和电荷传输层之间形成偶极矩的元件。 光电子器件可以包括在第一电极和第二电极之间的有源层，第一电极和有源层之间的第一电荷传输层，以及有源层和第一电荷传输层之间的偶极子层。 第二电荷输送层可以进一步设置在第二电极和有源层之间。 第二偶极子层可以进一步设置在第二电荷传输层和有源层之间。
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