Methods for adjusting light intensity for photolithography and related systems
    1.
    发明申请
    Methods for adjusting light intensity for photolithography and related systems 审中-公开
    调整光刻和相关系统光强度的方法

    公开(公告)号:US20060003240A1

    公开(公告)日:2006-01-05

    申请号:US11153787

    申请日:2005-06-15

    IPC分类号: G03C5/00 G03B27/00

    摘要: Correcting light intensity for photolithography may include irradiating light having a first light intensity distribution through a photo mask having a mask pattern to a photosensitive layer on a wafer to form a first pattern corresponding to the mask pattern. A distribution of critical dimensions of the first pattern corresponding to the mask pattern may be determined, and a second light intensity distribution may be determined based on a relation between the first light intensity distribution and the distribution of critical dimensions of the first pattern. Then, light having the second light intensity distribution may be irradiated. Related systems are also discussed.

    摘要翻译: 用于光刻的校正光强度可以包括将具有第一光强度分布的光通过具有掩模图案的光掩模照射到晶片上的感光层,以形成对应于掩模图案的第一图案。 可以确定与掩模图案对应的第一图案的临界尺寸的分布,并且可以基于第一光强度分布与第一图案的临界尺寸的分布之间的关系来确定第二光强度分布。 然后,可以照射具有第二光强度分布的光。 还讨论了相关系统。

    Optical element holder and projection exposure apparatus having the same
    2.
    发明申请
    Optical element holder and projection exposure apparatus having the same 有权
    光学元件支架和投影曝光装置

    公开(公告)号:US20060291077A1

    公开(公告)日:2006-12-28

    申请号:US11451580

    申请日:2006-06-13

    IPC分类号: G02B7/02

    摘要: In an optical member holder and a projection exposure apparatus having the same, a light beam radiated from a light source may be formed into light having a desired shape by selecting one of a plurality of optical elements. An optical element holder may include a support member to support the plurality of optical elements, a first driving section to move or rotate the support member to select one of the optical elements, and a second driving section to rotate the selected optical element to adjust an arrangement direction thereof. The light formed by the selected optical element may be directed through a reticle.

    摘要翻译: 在具有该光学构件保持器和投影曝光设备的光学构件保持器和投影曝光设备中,从光源辐射的光束可以通过选择多个光学元件之一形成具有所需形状的光。 光学元件保持器可以包括用于支撑多个光学元件的支撑构件,用于移动或旋转支撑构件以选择一个光学元件的第一驱动部分和第二驱动部分,以旋转所选择的光学元件以调整 排列方向。 由所选择的光学元件形成的光可以被引导通过掩模版。

    Optical element holder and projection exposure apparatus having the same
    4.
    发明授权
    Optical element holder and projection exposure apparatus having the same 有权
    光学元件支架和投影曝光装置

    公开(公告)号:US07457058B2

    公开(公告)日:2008-11-25

    申请号:US11451580

    申请日:2006-06-13

    IPC分类号: G02B26/02

    摘要: In an optical member holder and a projection exposure apparatus having the same, a light beam radiated from a light source may be formed into light having a desired shape by selecting one of a plurality of optical elements. An optical element holder may include a support member to support the plurality of optical elements, a first driving section to move or rotate the support member to select one of the optical elements, and a second driving section to rotate the selected optical element to adjust an arrangement direction thereof. The light formed by the selected optical element may be directed through a reticle.

    摘要翻译: 在具有该光学构件保持器和投影曝光设备的光学构件保持器和投影曝光设备中,从光源辐射的光束可以通过选择多个光学元件之一形成具有所需形状的光。 光学元件保持器可以包括用于支撑多个光学元件的支撑构件,用于移动或旋转支撑构件以选择一个光学元件的第一驱动部分和第二驱动部分,以旋转所选择的光学元件以调整 排列方向。 由所选择的光学元件形成的光可以被引导通过掩模版。

    Semiconductor integrated circuit devices
    5.
    发明授权
    Semiconductor integrated circuit devices 有权
    半导体集成电路器件

    公开(公告)号:US09595523B2

    公开(公告)日:2017-03-14

    申请号:US15074195

    申请日:2016-03-18

    摘要: A semiconductor integrated circuit device may include a standard cell region on a surface of a substrate and a first active region on the surface of the substrate in the standard cell region, wherein the first active region has a length in a first direction. A second active region may be on the surface of the substrate in the standard cell region, the second active region may have a length in the first direction, the length of the second active region may be greater than the length of the first active region, and an axis in a second direction may intersect centers of the first and second active regions so that the first and second active regions are symmetric about the axis in the second direction. A first gate electrode may extend across the first active region in the first direction, and a second gate electrode may extend across the second active region in the first direction.

    摘要翻译: 半导体集成电路器件可以包括在基板的表面上的标准单元区域和标准单元区域中的基板的表面上的第一有源区域,其中第一有源区域具有沿第一方向的长度。 第二有源区可以在标准单元区域中的衬底的表面上,第二有源区可以具有在第一方向上的长度,第二有源区的长度可以大于第一有源区的长度, 并且第二方向上的轴线可以与第一和第二有源区域的中心相交,使得第一和第二有源区域在第二方向上关于轴对称。 第一栅电极可以在第一方向上延伸穿过第一有源区,并且第二栅电极可以在第一方向上延伸穿过第二有源区。

    Methods of manufacturing a capacitor and a semiconductor device
    6.
    发明申请
    Methods of manufacturing a capacitor and a semiconductor device 审中-公开
    制造电容器和半导体器件的方法

    公开(公告)号:US20060115954A1

    公开(公告)日:2006-06-01

    申请号:US11265937

    申请日:2005-11-03

    IPC分类号: H01L21/20 H01L21/8242

    摘要: In methods of manufacturing a capacitor and a semiconductor device, a mold layer is formed on a substrate having a contact plug. The mold layer includes an opening exposing the contact plug. A conductive layer is formed on the contact plug, an inner sidewall of the opening and the mold layer. A photoresist pattern is formed to substantially fill the opening. A cylindrical lower electrode is formed by partially removing the conductive layer. The mold layer is selectively removed while the photoresist pattern prevents damage to the lower electrode, the contact plug and the substrate. The photoresist pattern is removed, and then a dielectric layer and an upper electrode are sequentially formed on the lower electrode. Damage to the lower electrode and the contact plug are effectively prevented due to the presence of the photoresist pattern during selective removal of the mold layer.

    摘要翻译: 在制造电容器和半导体器件的方法中,在具有接触插塞的基板上形成模层。 模具层包括露出接触塞的开口。 在接触插塞,开口的内侧壁和模具层上形成导电层。 形成光致抗蚀剂图案以基本上填充开口。 通过部分去除导电层形成圆柱形下电极。 选择性地去除模具层,同时光刻胶图案防止损坏下部电极,接触插塞和基板。 去除光致抗蚀剂图案,然后在下电极上依次形成电介质层和上电极。 由于在选择性去除模具层期间存在光致抗蚀剂图案,因此有效地防止了下电极和接触插塞的损坏。