摘要:
Correcting light intensity for photolithography may include irradiating light having a first light intensity distribution through a photo mask having a mask pattern to a photosensitive layer on a wafer to form a first pattern corresponding to the mask pattern. A distribution of critical dimensions of the first pattern corresponding to the mask pattern may be determined, and a second light intensity distribution may be determined based on a relation between the first light intensity distribution and the distribution of critical dimensions of the first pattern. Then, light having the second light intensity distribution may be irradiated. Related systems are also discussed.
摘要:
In an optical member holder and a projection exposure apparatus having the same, a light beam radiated from a light source may be formed into light having a desired shape by selecting one of a plurality of optical elements. An optical element holder may include a support member to support the plurality of optical elements, a first driving section to move or rotate the support member to select one of the optical elements, and a second driving section to rotate the selected optical element to adjust an arrangement direction thereof. The light formed by the selected optical element may be directed through a reticle.
摘要:
An illumination control module, which enables one diffraction optical element (DOE) to be applied to various photolithography processes, and a diffraction illumination system and a photolithography system including the same are provided. The illumination control module includes a convex-ring-shaped upper lens, and a concave-ring-shaped lower lens.
摘要:
In an optical member holder and a projection exposure apparatus having the same, a light beam radiated from a light source may be formed into light having a desired shape by selecting one of a plurality of optical elements. An optical element holder may include a support member to support the plurality of optical elements, a first driving section to move or rotate the support member to select one of the optical elements, and a second driving section to rotate the selected optical element to adjust an arrangement direction thereof. The light formed by the selected optical element may be directed through a reticle.
摘要:
A semiconductor integrated circuit device may include a standard cell region on a surface of a substrate and a first active region on the surface of the substrate in the standard cell region, wherein the first active region has a length in a first direction. A second active region may be on the surface of the substrate in the standard cell region, the second active region may have a length in the first direction, the length of the second active region may be greater than the length of the first active region, and an axis in a second direction may intersect centers of the first and second active regions so that the first and second active regions are symmetric about the axis in the second direction. A first gate electrode may extend across the first active region in the first direction, and a second gate electrode may extend across the second active region in the first direction.
摘要:
In methods of manufacturing a capacitor and a semiconductor device, a mold layer is formed on a substrate having a contact plug. The mold layer includes an opening exposing the contact plug. A conductive layer is formed on the contact plug, an inner sidewall of the opening and the mold layer. A photoresist pattern is formed to substantially fill the opening. A cylindrical lower electrode is formed by partially removing the conductive layer. The mold layer is selectively removed while the photoresist pattern prevents damage to the lower electrode, the contact plug and the substrate. The photoresist pattern is removed, and then a dielectric layer and an upper electrode are sequentially formed on the lower electrode. Damage to the lower electrode and the contact plug are effectively prevented due to the presence of the photoresist pattern during selective removal of the mold layer.