利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

95 条记录 (耗时 0.035 秒)

    Bias voltage generator and method generating bias voltage for semiconductor memory device
    1.
    发明授权
    Bias voltage generator and method generating bias voltage for semiconductor memory device 有权
    用于半导体存储器件的偏置电压发生器和产生偏置电压的方法

    公开(公告)号：US07548467B2

    公开(公告)日：2009-06-16

    申请号：US11955562

    申请日：2007-12-13

    申请人： Hye-Jin Kim ,  Kwang-Jin Lee ,  Woo-Yeong Cho ,  Mu-Hui Park

    发明人： Hye-Jin Kim ,  Kwang-Jin Lee ,  Woo-Yeong Cho ,  Mu-Hui Park

    IPC分类号： G11C5/14

    CPC分类号： G11C13/004 ,  G11C5/147 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0038 ,  G11C16/30 ,  G11C2013/0054 ,  G11C2213/72

    摘要： There are provided a bias voltage generator, a semiconductor memory device having the bias voltage generator, and a method for generating the bias voltage. The bias voltage generator which generates the bias voltage to control a sensing current supplied to a memory cell for sensing data is characterized in that the bias voltage is output in response to an input voltage being applied, so that a slope of the bias voltage to the input voltage is different in at least two sections divided corresponding to a level of the input voltage.

    摘要翻译： 提供了偏置电压发生器，具有偏置电压发生器的半导体存储器件以及用于产生偏置电压的方法。 产生用于控制提供给存储单元的感测电流以感测数据的偏置电压的偏置电压发生器的特征在于，响应于所施加的输入电压而输出偏置电压，使得偏置电压的斜率 至少两个部分的输入电压不同，对应于输入电压的电平。

    Phase change memory devices and systems, and related programming methods
    3.
    发明授权
    Phase change memory devices and systems, and related programming methods 有权
    相变存储器件和系统以及相关编程方法

    公开(公告)号：US07529124B2

    公开(公告)日：2009-05-05

    申请号：US11727711

    申请日：2007-03-28

    申请人： Woo-Yeong Cho ,  Kwang-Jin Lee ,  Hye-Jin Kim

    发明人： Woo-Yeong Cho ,  Kwang-Jin Lee ,  Hye-Jin Kim

    IPC分类号： G11C11/00

    CPC分类号： G11C8/10 ,  G11C13/0004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0076 ,  G11C2013/0078

    摘要： A phase change memory device performs a program operation by receiving program data to be programmed in selected memory cells, sensing read data already stored in the selected memory cells by detecting respective magnitudes of verify currents flowing through the selected memory cells when a verify read voltage is applied to the selected memory cells, determining whether the read data is identical to the program data, and upon determining that the program data for one or more of the selected memory cells is not identical to the corresponding read data, programming the one or more selected memory cells with the program data.

    摘要翻译： 相变存储器件通过接收在所选择的存储器单元中被编程的程序数据来执行编程操作，当检验读取电压为检测电压时，通过检测流过选择的存储器单元的检验电流的大小来感测已经存储在所选存储单元中的读取数据 应用于所选择的存储单元，确定读取的数据是否与程序数据相同，并且在确定所选择的存储单元中的一个或多个的程序数据与相应的读取数据不相同时，编程所选择的一个或多个 存储单元与程序数据。

    Phase change memory devices and systems, and related programming methods
    5.
    发明授权
    Phase change memory devices and systems, and related programming methods 有权
    相变存储器件和系统以及相关编程方法

    公开(公告)号：US08116127B2

    公开(公告)日：2012-02-14

    申请号：US12559792

    申请日：2009-09-15

    申请人： Woo-Yeong Cho ,  Kwang-Jin Lee ,  Hye-Jin Kim

    发明人： Woo-Yeong Cho ,  Kwang-Jin Lee ,  Hye-Jin Kim

    IPC分类号： G11C11/00

    CPC分类号： G11C8/10 ,  G11C13/0004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0076 ,  G11C2013/0078

    摘要： A method of writing data in a phase change memory includes receiving write data to be written to a selected phase change memory cell in the plurality of phase change memory cells, sensing data stored in the selected phase change memory cell, determining whether or not the sensed data is equal to the write data, and if the sensed data is not equal to the write data, iteratively applying a write current to the selected phase change memory cell, wherein a resistance state of the phase change memory cell is changed by heat corresponding to a level of the write current, and the level of the write current is changed between successive iterative applications.

    摘要翻译： 在相变存储器中写入数据的方法包括：接收要写入多个相变存储单元中的选定相变存储单元的写入数据，感测存储在所选择的相变存储单元中的数据，确定是否感测到 数据等于写入数据，并且如果感测到的数据不等于写入数据，则向所选择的相变存储器单元迭代地施加写入电流，其中相变存储单元的电阻状态由对应于 写入电流的电平和写入电流的电平在连续的迭代应用程序之间改变。

    Phase change memory devices and systems, and related programming methods
    7.
    发明授权
    Phase change memory devices and systems, and related programming methods 有权
    相变存储器件和系统以及相关编程方法

    公开(公告)号：US08159867B2

    公开(公告)日：2012-04-17

    申请号：US12395999

    申请日：2009-03-02

    申请人： Woo-Yeong Cho ,  Kwang-Jin Lee ,  Hye-Jin Kim

    发明人： Woo-Yeong Cho ,  Kwang-Jin Lee ,  Hye-Jin Kim

    IPC分类号： G11C11/00

    CPC分类号： G11C8/10 ,  G11C13/0004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0076 ,  G11C2013/0078

    摘要： A phase change memory device performs a program operation by receiving program data to be programmed in selected memory cells, sensing read data already stored in the selected memory cells by detecting respective magnitudes of verify currents flowing through the selected memory cells when a verify read voltage is applied to the selected memory cells, determining whether the read data is identical to the program data, and upon determining that the program data for one or more of the selected memory cells is not identical to the corresponding read data, programming the one or more selected memory cells with the program data.

    摘要翻译： 相变存储器件通过接收在所选择的存储器单元中被编程的程序数据来执行编程操作，当检验读取电压为检测电压时，通过检测流过选择的存储器单元的检验电流的大小来感测已经存储在所选存储单元中的读取数据 应用于所选择的存储单元，确定读取的数据是否与程序数据相同，并且在确定所选择的存储单元中的一个或多个的程序数据与相应的读取数据不相同时，编程所选择的一个或多个 存储单元与程序数据。

    Phase change memory devices and systems, and related programming methods
    9.
    发明申请
    Phase change memory devices and systems, and related programming methods 有权
    相变存储器件和系统以及相关编程方法

    公开(公告)号：US20070236987A1

    公开(公告)日：2007-10-11

    申请号：US11727711

    申请日：2007-03-28

    申请人： Woo-Yeong Cho ,  Kwang-Jin Lee ,  Hye-Jin Kim

    发明人： Woo-Yeong Cho ,  Kwang-Jin Lee ,  Hye-Jin Kim

    IPC分类号： G11C11/00

    CPC分类号： G11C8/10 ,  G11C13/0004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0076 ,  G11C2013/0078

    摘要： A phase change memory device performs a program operation by receiving program data to be programmed in selected memory cells, sensing read data already stored in the selected memory cells by detecting respective magnitudes of verify currents flowing through the selected memory cells when a verify read voltage is applied to the selected memory cells, determining whether the read data is identical to the program data, and upon determining that the program data for one or more of the selected memory cells is not identical to the corresponding read data, programming the one or more selected memory cells with the program data.

    摘要翻译： 相变存储器件通过接收在所选择的存储器单元中被编程的程序数据来执行编程操作，当检验读取电压为检测电压时，通过检测流过选择的存储器单元的检验电流的大小来感测已经存储在所选存储单元中的读取数据 应用于所选择的存储单元，确定读取的数据是否与程序数据相同，并且在确定所选择的存储单元中的一个或多个的程序数据与相应的读取数据不相同时，编程所选择的一个或多个 存储单元与程序数据。