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    NONVOLATILE MEMORY DEVICE, STORAGE SYSTEM HAVING THE SAME, AND METHOD OF DRIVING THE NONVOLATILE MEMORY DEVICE
    2.
    发明申请
    NONVOLATILE MEMORY DEVICE, STORAGE SYSTEM HAVING THE SAME, AND METHOD OF DRIVING THE NONVOLATILE MEMORY DEVICE 有权
    非易失性存储器件，具有该存储器件的存储器件，以及驱动非易失性存储器件的方法

    公开(公告)号：US20110080775A1

    公开(公告)日：2011-04-07

    申请号：US12893413

    申请日：2010-09-29

    申请人： Jun-Soo Bae ,  Kwang-Jin Lee ,  Beak-Hyung Cho

    发明人： Jun-Soo Bae ,  Kwang-Jin Lee ,  Beak-Hyung Cho

    IPC分类号： G11C11/00 ,  G11C7/04

    CPC分类号： G11C8/12 ,  G11C7/04 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2211/5634

    摘要： A nonvolatile memory device includes a memory cell array including a plurality of nonvolatile memory cells each having a resistance corresponding to one of a plurality of first resistance distributions, a temperature compensation circuit including one or more reference cells each having a resistance corresponding to one among one or more second resistance distributions, and a data read circuit including a compensation unit and a sense amplifier, the compensation unit being adapted to supply compensation current to a sensing node, an amount of the compensation current varying based on the resistance of each reference cell, and the sense amplifier being adapted to compare the level of the sensing node with a reference level and to output a comparison result.

    摘要翻译： 非易失性存储器件包括存储单元阵列，其包括多个非易失性存储单元，每个非易失性存储单元具有对应于多个第一电阻分布之一的电阻，温度补偿电路包括一个或多个参考单元，每个参考单元具有对应于一个 或更多的第二电阻分布，以及包括补偿单元和读出放大器的数据读取电路，所述补偿单元适于向感测节点提供补偿电流，所述补偿电流的量基于每个参考单元的电阻而变化， 并且所述读出放大器适于将感测节点的电平与参考电平进行比较并输出比较结果。

    Variable resistance memory device and system thereof
    3.
    发明授权
    Variable resistance memory device and system thereof 有权
    可变电阻存储器件及其系统

    公开(公告)号：US08139432B2

    公开(公告)日：2012-03-20

    申请号：US12901168

    申请日：2010-10-08

    申请人： Byung-gil Choi ,  Beak-hyung Cho ,  Jun-Soo Bae ,  Kwang-Jin Lee

    发明人： Byung-gil Choi ,  Beak-hyung Cho ,  Jun-Soo Bae ,  Kwang-Jin Lee

    IPC分类号： G11C7/04

    CPC分类号： G11C7/18 ,  G11C7/04 ,  G11C8/12 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0026 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2029/2602 ,  H01L27/24

    摘要： A nonvolatile memory device comprising: a plurality of memory banks, each of which operates independently and includes a plurality of resistance memory cells, each cell including a variable resistive element having a resistance varying depending on stored data; a plurality of global bit lines, each global bit line being shared by the plurality of memory banks; a temperature compensation circuit including one or more reference cells; and a data read circuit which is electrically connected to the plurality of global bit lines and performs a read operation by supplying at least one of the resistance memory cells with a current varying according to resistances of the reference cells.

    摘要翻译： 一种非易失性存储器件，包括：多个存储体，每个存储体各自独立地操作并且包括多个电阻存储器单元，每个单元包括具有根据存储的数据而变化的电阻的可变电阻元件; 多个全局位线，每个全局位线由多个存储体共享; 包括一个或多个参考单元的温度补偿电路; 以及数据读取电路，其电连接到所述多个全局位线，并且通过向所述电阻存储单元中的至少一个提供根据所述参考单元的电阻而变化的电流来执行读取操作。

    Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory device
    4.
    发明授权
    Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory device 有权
    非易失性存储器件，具有相同的存储系统以及驱动非易失性存储器件的方法

    公开(公告)号：US08050084B2

    公开(公告)日：2011-11-01

    申请号：US12893413

    申请日：2010-09-29

    申请人： Jun-Soo Bae ,  Kwang-Jin Lee ,  Beak-Hyung Cho

    发明人： Jun-Soo Bae ,  Kwang-Jin Lee ,  Beak-Hyung Cho

    IPC分类号： G11C11/00

    CPC分类号： G11C8/12 ,  G11C7/04 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2211/5634

    摘要： A nonvolatile memory device includes a memory cell array including a plurality of nonvolatile memory cells each having a resistance corresponding to one of a plurality of first resistance distributions, a temperature compensation circuit including one or more reference cells each having a resistance corresponding to one among one or more second resistance distributions, and a data read circuit including a compensation unit and a sense amplifier, the compensation unit being adapted to supply compensation current to a sensing node, an amount of the compensation current varying based on the resistance of each reference cell, and the sense amplifier being adapted to compare the level of the sensing node with a reference level and to output a comparison result.

    摘要翻译： 非易失性存储器件包括存储单元阵列，其包括多个非易失性存储单元，每个非易失性存储单元具有对应于多个第一电阻分布之一的电阻，温度补偿电路包括一个或多个参考单元，每个参考单元具有对应于一个 或更多的第二电阻分布，以及包括补偿单元和读出放大器的数据读取电路，所述补偿单元适于向感测节点提供补偿电流，所述补偿电流的量基于每个参考单元的电阻而变化， 并且所述读出放大器适于将感测节点的电平与参考电平进行比较并输出比较结果。

    Method of forming a phase changeable structure
    8.
    发明授权
    Method of forming a phase changeable structure 有权
    形成相变结构的方法

    公开(公告)号：US07582568B2

    公开(公告)日：2009-09-01

    申请号：US11625142

    申请日：2007-01-19

    申请人： Young-Soo Lim ,  Jun-Soo Bae

    发明人： Young-Soo Lim ,  Jun-Soo Bae

    IPC分类号： H01L21/302

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1675

    摘要： The present invention relates to a method of forming a phase changeable structure wherein an upper electrode is formed on a phase changeable layer. A material including fluorine can be provided to the phase changeable layer and the upper electrode. The phase changeable layer can be etched to form a phase changeable pattern. Oxygen plasma or water vapor plasma can then be provided to the upper electrode and the phase changeable pattern.

    摘要翻译： 本发明涉及形成可变相结构的方法，其中上电极形成在相变层上。 可以向相变层和上电极提供包含氟的材料。 相变层可被蚀刻以形成相变图案。 然后可以将氧等离子体或水蒸气等离子体提供给上电极和相变图案。

    METHODS OF FABRICATING MULTI-LAYER PHASE-CHANGEABLE MEMORY DEVICES
    9.
    发明申请
    METHODS OF FABRICATING MULTI-LAYER PHASE-CHANGEABLE MEMORY DEVICES 有权
    制造多层相变记忆体装置的方法

    公开(公告)号：US20090004773A1

    公开(公告)日：2009-01-01

    申请号：US12189477

    申请日：2008-08-11

    申请人： Jeong-Hee Park ,  Ju-Chul Park ,  Jun-Soo Bae ,  Bong-Jin Kuh ,  Yong-Ho Ha

    发明人： Jeong-Hee Park ,  Ju-Chul Park ,  Jun-Soo Bae ,  Bong-Jin Kuh ,  Yong-Ho Ha

    IPC分类号： H01L45/00

    CPC分类号： H01L45/06 ,  G11C13/0004 ,  G11C2213/79 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

    摘要： A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed.

    摘要翻译： 可变相存储器件包括相变材料图案，以及电连接到相变材料图案的第一和第二电极。 第一和第二电极被配置为向相变材料图案提供电信号。 相变材料图案包括第一相变材料层和第二相变材料层。 第一和第二可相变材料图案具有不同的化学，物理和/或电特性。 例如，第二相变材料层可以具有比第一相变材料层更大的电阻率。 例如，第一相变材料层可以包括第一浓度的氮，第二相变材料层可以包括大于第一浓度的第二浓度的氮。 还讨论了相关设备和制造方法。