摘要:
Provided is a method of roll-to-roll processing of semiconductor parts, the method including: supplying to a processing unit a first material uncoiled from a first roll for processing at the processing unit; connecting a leading board to a leading portion of the first material before the processing so that the first material led by the leading board is processed during transfer in the processing unit along a path; cutting the leading board from the leading portion of the first material after the processing; and if a terminal edge of the first material begins to be processed at the processing unit, connecting another leading board to a leading portion of a second material uncoiled from a second roll and supplying the second material to the processing unit for processing.
摘要:
Provided is a lead frame having an improved wire bonding property of inner leads and an improved soldering property of outer leads and preventing defects with high producing yield, and a method of manufacturing the lead frame. The lead frame includes a plurality of inner leads formed with predetermined intervals between them; and a plurality of outer leads extended from the inner leads in length directions of the inner leads, each of which has an end portion overlapped with the inner lead and coupled thereto and the other end connected to neighboring outer lead by a supporting portion.
摘要:
A dielectric layer of a plasma display panel that can coat a discharge electrode regardless of the form of the discharge electrode and that can be manufactured using a low temperature process, a method of forming the dielectric layer, and a plasma display panel including the dielectric layer. Thus the dielectric layer includes an organic material and is manufactured using an electro-deposition coating method.
摘要:
Provided are a semiconductor lead frame, a semiconductor package having the semiconductor lead frame, and a method of plating the semiconductor lead frame. The method includes preparing a substrate formed of a Fe—Ni alloy (alloy 42), and a plating layer that contains grains less than 1 micrometer in size and is plated on the substrate. The growth of whiskers when a Sn plated layer is formed on a substrate formed of a Fe—Ni alloy (alloy 42) can be suppressed by minimizing the grain size of the Sn plated layer.
摘要:
A plasma display panel, a method of manufacturing an electrode burying dielectric wall of a plasma display panel, and a method of manufacturing an electrode burying dielectric wall of the plasma display panel. The plasma display panel comprises a front substrate, a rear substrate separated from the front substrate in a vertical direction, front discharge electrodes and rear discharge electrodes disposed between the front substrate separated from one another by an insulating layer, a high dielectric layer surrounding the front discharge electrodes and the rear discharge electrodes, discharge cells, at least a portion of each discharge cell being surrounded by the high dielectric layer, a phosphor layer disposed in each of the discharge cells, and a discharge gas filled in the discharge cells.
摘要:
Provided are a semiconductor lead frame, a semiconductor package having the semiconductor lead frame, and a method of plating the semiconductor lead frame. The method includes preparing a substrate formed of a Fe—Ni alloy (alloy 42), and a plating layer that contains grains less than 1 micrometer in size and is plated on the substrate. The growth of whiskers when a Sn plated layer is formed on a substrate formed of a Fe—Ni alloy (alloy 42) can be suppressed by minimizing the grain size of the Sn plated layer.
摘要:
A plasma display panel, a method of manufacturing an electrode burying dielectric wall of a plasma display panel, and a method of manufacturing an electrode burying dielectric wall of the plasma display panel. The plasma display panel comprises a front substrate, a rear substrate separated from the front substrate in a vertical direction, front discharge electrodes and rear discharge electrodes disposed between the front substrate separated from one another by an insulating layer, a high dielectric layer surrounding the front discharge electrodes and the rear discharge electrodes, discharge cells, at least a portion of each discharge cell being surrounded by the high dielectric layer, a phosphor layer disposed in each of the discharge cells, and a discharge gas filled in the discharge cells.
摘要:
Provided is a lead frame having an improved wire bonding property of inner leads and an improved soldering property of outer leads and preventing defects with high producing yield, and a method of manufacturing the lead frame. The lead frame includes a plurality of inner leads formed with predetermined intervals between them; and a plurality of outer leads extended from the inner leads in length directions of the inner leads, each of which has an end portion overlapped with the inner lead and coupled thereto and the other end connected to neighboring outer lead by a supporting portion.