利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

29 条记录 (耗时 0.022 秒)

    METHODS FOR DEPOSITING HIGH-K DIELECTRICS
    4.
    发明申请
    METHODS FOR DEPOSITING HIGH-K DIELECTRICS 有权
    沉积高K电介质的方法

    公开(公告)号：US20100330772A1

    公开(公告)日：2010-12-30

    申请号：US12495558

    申请日：2009-06-30

    申请人： Xiangxin Rui ,  Sunil Shanker ,  Sandra Malhotra ,  Imran Hashim ,  Edward Haywood

    发明人： Xiangxin Rui ,  Sunil Shanker ,  Sandra Malhotra ,  Imran Hashim ,  Edward Haywood

    IPC分类号： H01L21/02

    CPC分类号： H01L21/3141 ,  C23C16/02 ,  C23C16/405 ,  H01L21/02186 ,  H01L21/02271 ,  H01L21/02315 ,  H01L21/31604 ,  H01L28/91

    摘要： Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide.

    摘要翻译： 描述了用于沉积高K电介质的方法，包括在衬底上沉积第一电极，其中第一电极选自铂和钌，对暴露的金属施加氧等离子体处理以减小接触角 并且使用化学气相沉积工艺和原子层沉积工艺中的至少一种在暴露的金属上沉积氧化钛层，其中所述氧化钛层包含至少一部分金红石型氧化钛。

    METHODS FOR FORMING HIGH-K CRYSTALLINE FILMS AND RELATED DEVICES
    8.
    发明申请
    METHODS FOR FORMING HIGH-K CRYSTALLINE FILMS AND RELATED DEVICES 有权
    用于形成高K晶体薄膜和相关器件的方法

    公开(公告)号：US20120156889A1

    公开(公告)日：2012-06-21

    申请号：US13334618

    申请日：2011-12-22

    申请人： Hanhong Chen ,  Edward Haywood ,  Pragati Kumar ,  Sandra Malhotra ,  Xiangxin Rui

    发明人： Hanhong Chen ,  Edward Haywood ,  Pragati Kumar ,  Sandra Malhotra ,  Xiangxin Rui

    IPC分类号： H01L21/316

    CPC分类号： H01L28/40 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L28/56 ,  H01L28/60

    摘要： This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor or DRAM cell. In such a device, a high-K zirconia-based layer may be used as the primary dielectric together with a relatively inexpensive metal electrode based on titanium nitride. To prevent corruption of the electrode during device formation, a thin barrier layer can be used seal the electrode prior to the use of a high temperature process and a (high-concentration or dosage) ozone reagent (i.e., to create a high-K zirconia-based layer). In some embodiments, the barrier layer can also be zirconia-based, for example, a thin layer of doped or un-doped amorphous zirconia. Fabrication of a device in this manner facilitates formation of a device with dielectric constant of greater than 40 based on zirconia and titanium nitride, and generally helps produce less costly, increasingly dense DRAM cells and other semiconductor structures.

    摘要翻译： 本公开提供了制造半导体堆叠和相关联的器件（诸如电容器或DRAM单元）的方法。 在这种器件中，高K氧化锆基层可以与基于氮化钛的相对廉价的金属电极一起用作主要电介质。 为了防止在器件形成期间电极的损坏，可以使用薄的阻挡层，在使用高温工艺和（高浓度或剂量）的臭氧试剂之前密封电极（即，产生高K氧化锆 基层）。 在一些实施例中，阻挡层也可以是基于氧化锆的，例如掺杂或未掺杂的无定形氧化锆的薄层。 以这种方式制造器件有助于基于氧化锆和氮化钛形成具有大于40的介电常数的器件，并且通常有助于产生更便宜的，越来越致密的DRAM电池和其它半导体结构。

    Method of forming stacked metal oxide layers
    9.
    发明授权
    Method of forming stacked metal oxide layers 有权
    堆叠金属氧化物层的形成方法

    公开(公告)号：US08530322B2

    公开(公告)日：2013-09-10

    申请号：US12970835

    申请日：2010-12-16

    申请人： Hanhong Chen ,  Edward Haywood ,  Pragati Kumar ,  Sandra Malhotra ,  Xiangxin Rui

    发明人： Hanhong Chen ,  Edward Haywood ,  Pragati Kumar ,  Sandra Malhotra ,  Xiangxin Rui

    IPC分类号： H01L21/20

    CPC分类号： H01L28/40 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L28/56 ,  H01L28/60

    摘要： This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor or DRAM cell. In such a device, a high-K zirconia-based layer may be used as the primary dielectric together with a relatively inexpensive metal electrode based on titanium nitride. To prevent corruption of the electrode during device formation, a thin barrier layer can be used seal the electrode prior to the use of a high temperature process and a (high-concentration or dosage) ozone reagent (i.e., to create a high-K zirconia-based layer). In some embodiments, the barrier layer can also be zirconia-based, for example, a thin layer of doped or un-doped amorphous zirconia. Fabrication of a device in this manner facilitates formation of a device with dielectric constant of greater than 40 based on zirconia and titanium nitride, and generally helps produce less costly, increasingly dense DRAM cells and other semiconductor structures.

    摘要翻译： 本公开提供了制造半导体堆叠和相关联的器件（诸如电容器或DRAM单元）的方法。 在这种器件中，高K氧化锆基层可以与基于氮化钛的相对廉价的金属电极一起用作主要电介质。 为了防止在器件形成期间电极的损坏，可以使用薄的阻挡层，在使用高温工艺和（高浓度或剂量）的臭氧试剂之前密封电极（即，产生高K氧化锆 基层）。 在一些实施例中，阻挡层也可以是基于氧化锆的，例如掺杂或未掺杂的无定形氧化锆的薄层。 以这种方式制造器件有助于基于氧化锆和氮化钛形成具有大于40的介电常数的器件，并且通常有助于产生更便宜的，越来越致密的DRAM电池和其它半导体结构。

    METHOD OF FORMING STACKED METAL OXIDE LAYERS
    10.
    发明申请
    METHOD OF FORMING STACKED METAL OXIDE LAYERS 有权
    形成堆叠金属氧化物层的方法

    公开(公告)号：US20120156854A1

    公开(公告)日：2012-06-21

    申请号：US12970835

    申请日：2010-12-16

    申请人： Hanhong Chen ,  Edward Haywood ,  Pragati Kumar ,  Sandra Malhotra ,  Xiangxin Rui

    发明人： Hanhong Chen ,  Edward Haywood ,  Pragati Kumar ,  Sandra Malhotra ,  Xiangxin Rui

    IPC分类号： H01L21/02

    CPC分类号： H01L28/40 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L28/56 ,  H01L28/60

    摘要： This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor or DRAM cell. In such a device, a high-K zirconia-based layer may be used as the primary dielectric together with a relatively inexpensive metal electrode based on titanium nitride. To prevent corruption of the electrode during device formation, a thin barrier layer can be used seal the electrode prior to the use of a high temperature process and a (high-concentration or dosage) ozone reagent (i.e., to create a high-K zirconia-based layer). In some embodiments, the barrier layer can also be zirconia-based, for example, a thin layer of doped or un-doped amorphous zirconia. Fabrication of a device in this manner facilitates formation of a device with dielectric constant of greater than 40 based on zirconia and titanium nitride, and generally helps produce less costly, increasingly dense DRAM cells and other semiconductor structures.

    摘要翻译： 本公开提供了制造半导体堆叠和相关联的器件（诸如电容器或DRAM单元）的方法。 在这种器件中，高K氧化锆基层可以与基于氮化钛的相对廉价的金属电极一起用作主要电介质。 为了防止在器件形成期间电极的损坏，可以使用薄的阻挡层，在使用高温工艺和（高浓度或剂量）的臭氧试剂之前密封电极（即，产生高K氧化锆 基层）。 在一些实施例中，阻挡层也可以是基于氧化锆的，例如掺杂或未掺杂的无定形氧化锆的薄层。 以这种方式制造器件有助于基于氧化锆和氮化钛形成具有大于40的介电常数的器件，并且通常有助于产生更便宜的，越来越致密的DRAM电池和其它半导体结构。