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    METHODS FOR DEPOSITING HIGH-K DIELECTRICS
    3.
    发明申请
    METHODS FOR DEPOSITING HIGH-K DIELECTRICS 有权
    沉积高K电介质的方法

    公开(公告)号：US20100330772A1

    公开(公告)日：2010-12-30

    申请号：US12495558

    申请日：2009-06-30

    申请人： Xiangxin Rui ,  Sunil Shanker ,  Sandra Malhotra ,  Imran Hashim ,  Edward Haywood

    发明人： Xiangxin Rui ,  Sunil Shanker ,  Sandra Malhotra ,  Imran Hashim ,  Edward Haywood

    IPC分类号： H01L21/02

    CPC分类号： H01L21/3141 ,  C23C16/02 ,  C23C16/405 ,  H01L21/02186 ,  H01L21/02271 ,  H01L21/02315 ,  H01L21/31604 ,  H01L28/91

    摘要： Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide.

    摘要翻译： 描述了用于沉积高K电介质的方法，包括在衬底上沉积第一电极，其中第一电极选自铂和钌，对暴露的金属施加氧等离子体处理以减小接触角 并且使用化学气相沉积工艺和原子层沉积工艺中的至少一种在暴露的金属上沉积氧化钛层，其中所述氧化钛层包含至少一部分金红石型氧化钛。

    Titanium-Based High-K Dielectric Films
    9.
    发明申请
    Titanium-Based High-K Dielectric Films 有权
    钛基高K介电薄膜

    公开(公告)号：US20100330269A1

    公开(公告)日：2010-12-30

    申请号：US12494702

    申请日：2009-06-30

    申请人： Hanhong Chen ,  Pragati Kumar ,  Sunil Shanker ,  Edward Haywood ,  Sandra Malhotra ,  Imran Hashim ,  Nobi Fuchigami ,  Prashant Phatak ,  Monica Mathur

    发明人： Hanhong Chen ,  Pragati Kumar ,  Sunil Shanker ,  Edward Haywood ,  Sandra Malhotra ,  Imran Hashim ,  Nobi Fuchigami ,  Prashant Phatak ,  Monica Mathur

    IPC分类号： B05D5/12

    CPC分类号： H01G4/1218 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/56 ,  H01G4/33 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/3142 ,  H01L28/40

    摘要： This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on titanium oxide, to suppress the formation of anatase-phase titanium oxide and (b) related devices and structures. A metal-insulator-metal (“MIM”) stack is formed using an ozone pretreatment process of a bottom electrode (or other substrate) followed by an ALD process to form a TiO2 dielectric, rooted in the use of an amide-containing precursor. Following the ALD process, an oxidizing anneal process is applied in a manner is hot enough to heal defects in the TiO2 dielectric and reduce interface states between TiO2 and electrode; the anneal temperature is selected so as to not be so hot as to disrupt BEL surface roughness. Further process variants may include doping the titanium oxide, pedestal heating during the ALD process to 275-300 degrees Celsius, use of platinum or ruthenium for the BEL, and plural reagent pulses of ozone for each ALD process cycle. The process provides high deposition rates, and the resulting MIM structure has substantially no x-ray diffraction peaks associated with anatase-phase titanium oxide.

    摘要翻译： 本公开内容提供（a）制造基于氧化钛的氧化物层（例如电介质层）的方法，以抑制锐钛矿相氧化钛的形成和（b）相关的器件和结构。 使用底部电极（或其他基底）的臭氧预处理随后进行ALD工艺来形成金属 - 绝缘体 - 金属（“MIM”）堆叠，以形成根植于使用含酰胺的前体的TiO 2电介质。 在ALD工艺之后，氧化退火工艺的应用热度足以愈合TiO2电介质中的缺陷，并降低TiO2和电极之间的界面态; 选择退火温度以使其不那么热，以致破坏BEL表面粗糙度。 进一步的工艺变型可以包括在ALD工艺期间掺杂氧化钛，基座加热至275-300摄氏度，对于BEL使用铂或钌，对于每个ALD工艺循环使用多个试剂脉冲的臭氧。 该方法提供高沉积速率，并且所得MIM结构基本上没有与锐钛矿相氧化钛相关的x射线衍射峰。