Method for providing side shields for a magnetic recording transducer
    2.
    发明授权
    Method for providing side shields for a magnetic recording transducer 有权
    为磁记录传感器提供侧屏蔽的方法

    公开(公告)号:US08703397B1

    公开(公告)日:2014-04-22

    申请号:US13434514

    申请日:2012-03-29

    IPC分类号: G03F7/26

    摘要: A method for fabricating a side shield for a magnetic transducer is described. The magnetic transducer has a nonmagnetic layer and a pole on the nonmagnetic layer. The pole has sidewalls and an air-bearing surface location (ABS location) corresponding to an air-bearing surface (ABS). A developable bottom antireflective coating (D-BARC) layer covering the pole and at least a portion of the nonmagnetic layer is provided. The D-BARC layer is photosensitive. A photosensitive mask layer is provided on the D-BARC layer. A first portion of the mask layer and a first portion of the D-BARC layer are removed to form a bi-layer mask. The bi-layer mask has an aperture in the mask layer and the D-BARC layer. At least one side shield layer is deposited. At least a portion of the at least one side shield layer resides in the aperture. The bi-layer mask is also removed.

    摘要翻译: 描述了用于制造用于磁换能器的侧屏蔽的方法。 磁换能器在非磁性层上具有非磁性层和极。 杆具有对应于空气轴承表面(ABS)的侧壁和空气轴承表面位置(ABS位置)。 提供了覆盖极点和非磁性层的至少一部分的可显影底部抗反射涂层(D-BARC)层。 D-BARC层是光敏的。 在D-BARC层上提供感光掩模层。 除去掩模层的第一部分和D-BARC层的第一部分以形成双层掩模。 双层掩模在掩模层和D-BARC层中具有孔径。 沉积至少一个侧面屏蔽层。 至少一个侧面屏蔽层的至少一部分位于孔中。 双层掩模也被去除。

    Double patterning hard mask for damascene perpendicular magnetic recording (PMR) writer
    3.
    发明授权
    Double patterning hard mask for damascene perpendicular magnetic recording (PMR) writer 有权
    用于大马士革垂直磁记录(PMR)作者的双重图案化硬掩模

    公开(公告)号:US09202480B2

    公开(公告)日:2015-12-01

    申请号:US12579316

    申请日:2009-10-14

    摘要: Various embodiments of the subject disclosure provide a double patterning process that uses two patterning steps to produce a write structure having a nose shape with sharp corners. In one embodiment, a method for forming a write structure on a multi-layer structure comprising a substrate and an insulator layer on the substrate is provided. The method comprises forming a hard mask layer over the insulator layer, performing a first patterning process to form a pole and yoke opening in the hard mask layer, performing a second patterning process to remove rounded corners of the pole and yoke opening in the hard mask layer, removing a portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer to form a trench in the insulator layer, and filling the trench with a magnetic material.

    摘要翻译: 本发明公开的各种实施例提供一种双重图案化工艺,其使用两个图案化步骤来产生具有尖角的鼻子形状的写入结构。 在一个实施例中,提供了一种用于在包括衬底和衬底上的绝缘体层的多层结构上形成写结构的方法。 该方法包括在绝缘体层上形成硬掩模层,执行第一图案化工艺以在硬掩模层中形成极和轭开口,执行第二图案化处理以去除硬掩模中的极和轭开口的圆角 去除与硬掩模层中的极和轭开口相对应的绝缘体层的一部分,以在绝缘体层中形成沟槽,并用磁性材料填充沟槽。

    Method and system for exposing a photoresist in a magnetic device
    5.
    发明授权
    Method and system for exposing a photoresist in a magnetic device 有权
    用于在磁性装置中曝光光致抗蚀剂的方法和系统

    公开(公告)号:US08169473B1

    公开(公告)日:2012-05-01

    申请号:US12056494

    申请日:2008-03-27

    IPC分类号: G03B27/32 G03B27/42

    摘要: A method and system for exposing a plurality of fields on a substrate. The substrate has a center and an edge. The fields include a plurality of rows. The method and system include determining an exposure sequence for the plurality of fields. Each of the plurality of fields has a distance from the center and a placement in the exposure sequence. The placement of a field in the exposure sequence is based on the distance and excludes placing each of the plurality of fields in a row of the plurality of rows next to an adjacent field in the row in combination with placing each of the plurality of rows next to an adjacent row. The method and system also include exposing the plurality of fields in the exposure sequence in order of the placement.

    摘要翻译: 一种用于在衬底上暴露多个场的方法和系统。 基板具有中心和边缘。 这些字段包括多行。 该方法和系统包括确定多个场的曝光序列。 多个场中的每一个具有与中心的距离和曝光序列中的位置。 曝光序列中的场的放置基于该距离,并且排除将多个场中的每一个放置在与行中的相邻场相邻的多行中的每一行中,并将下一个行中的每一行相结合 到相邻行。 该方法和系统还包括以放置顺序暴露曝光序列中的多个场。

    Method and system for providing optical proximity correction for structures such as a PMR nose
    6.
    发明授权
    Method and system for providing optical proximity correction for structures such as a PMR nose 有权
    用于为诸如PMR鼻子的结构提供光学邻近校正的方法和系统

    公开(公告)号:US07910267B1

    公开(公告)日:2011-03-22

    申请号:US12333699

    申请日:2008-12-12

    IPC分类号: G03F1/00

    CPC分类号: G03F1/36

    摘要: An optical mask for providing a pattern for portion of an electronic device, such as a magnetic recording transducer, is disclosed. The optical mask includes a device feature and at least one detached correction feature. The device feature includes a corner corresponding to a device corner of the pattern. The device corner has an angle of greater than zero degrees and less than one hundred eighty degrees. The at least one detached correction feature resides in proximity to but is physically separated from the corner. Each of the at least one detached correction feature is sub-resolution.

    摘要翻译: 公开了一种用于为诸如磁记录换能器的电子设备的一部分提供图案的光掩模。 光学掩模包括设备特征和至少一个分离的校正特征。 设备特征包括与图案的设备角对应的角。 设备角具有大于零度且小于百八十度的角度。 至少一个分离的校正特征位于附近,但是与角部物理分离。 至少一个分离的校正特征中的每一个都是子分辨率。

    Method and system for exposing photoresist in a microelectric device
    7.
    发明授权
    Method and system for exposing photoresist in a microelectric device 有权
    用于在微电子器件中曝光光致抗蚀剂的方法和系统

    公开(公告)号:US09274438B1

    公开(公告)日:2016-03-01

    申请号:US12146370

    申请日:2008-06-25

    IPC分类号: G03C5/04 G03F7/20 H01L21/027

    摘要: A method and system provide microelectric devices on fields on a substrate. Each field includes at least one microelectric device having a critical device feature and remaining device feature(s) distal from the critical device feature. The method and system include providing a photoresist layer for fabricating the microelectric devices and exposing the photoresist layer using a dark field mask. The dark field mask is for defining a critical mask feature corresponding to the critical device feature and exposing a first portion of the fields. The first portion includes not more than five percent of each field. The method and system further include exposing the photoresist layer using a clear field mask. The clear field mask is for defining remaining mask feature(s) corresponding to the remaining device feature(s). The clear field mask exposes a second portion of the fields that is different from the first portion.

    摘要翻译: 一种方法和系统在衬底上的场上提供微电子器件。 每个场包括至少一个具有关键装置特征的微电子装置和远离关键装置特征的剩余装置特征。 所述方法和系统包括提供用于制造微电子器件的光致抗蚀剂层并且使用暗场掩模曝光光致抗蚀剂层。 暗场掩模用于定义与关键设备特征对应的关键掩模特征并暴露场的第一部分。 第一部分不超过每个领域的百分之五。 该方法和系统还包括使用清晰的场屏蔽来曝光光致抗蚀剂层。 清除场掩模用于定义对应于剩余设备特征的剩余掩模特征。 清除场掩模曝光与第一部分不同的场的第二部分。

    Method for providing a wrap-around shield for a magnetic recording transducer
    8.
    发明授权
    Method for providing a wrap-around shield for a magnetic recording transducer 有权
    提供用于磁记录传感器的环绕屏蔽的方法

    公开(公告)号:US08322023B1

    公开(公告)日:2012-12-04

    申请号:US12615544

    申请日:2009-11-10

    IPC分类号: G11B5/127 H04R31/00

    摘要: A method for fabricating a magnetic transducer is described. The magnetic transducer includes a pole having a pole tip and a flared region. The method Includes providing a first mask layer on the pole and providing a second mask layer on the first mask layer. The first mask layer is soluble in a predetermined solution and has a first thickness. The second mask layer has a second thickness greater than the first thickness. The method also includes forming a mask from the first mask layer and the second mask layer. The step of forming the mask layer includes using the predetermined solution. The mask has a pattern that exposes a portion of the pole tip and covers a portion of the flared region. The method also includes providing a wrap-around shield on at least the pole tip.

    摘要翻译: 描述了用于制造磁换能器的方法。 磁换能器包括具有极尖和扩口区域的极。 该方法包括在极点上提供第一掩模层,并在第一掩模层上提供第二掩模层。 第一掩模层可溶于预定溶液并具有第一厚度。 第二掩模层具有大于第一厚度的第二厚度。 该方法还包括从第一掩模层和第二掩模层形成掩模。 形成掩模层的步骤包括使用预定的溶液。 掩模具有暴露极尖的一部分并覆盖扩张区域的一部分的图案。 该方法还包括在至少极尖上提供环绕屏蔽。

    Methods for fabricating a magnetic recording device
    9.
    发明授权
    Methods for fabricating a magnetic recording device 有权
    制造磁记录装置的方法

    公开(公告)号:US07785666B1

    公开(公告)日:2010-08-31

    申请号:US11955266

    申请日:2007-12-12

    IPC分类号: B05D1/32

    摘要: A method and system for fabricating a magnetic recording device are described. The method and system include providing a mask layer on the magnetic recording device and imprinting a pattern in the mask layer to form a mask. The method and system also include transferring the pattern from the mask to the magnetic recording device. In another aspect, the method and system include providing a malleable mask layer on the magnetic recording device. In this aspect, the method and system also include depressing an imprint mask into the mask layer and curing the mask layer while the imprint mask is depressed into the mask layer to provide a mask having a pattern. The pattern may correspond to a read sensor and/or a perpendicular magnetic recording pole. The method and system also include transferring the pattern from the mask to the magnetic recording device.

    摘要翻译: 描述了用于制造磁记录装置的方法和系统。 所述方法和系统包括在磁记录装置上设置掩模层并在掩模层中印刷图案以形成掩模。 该方法和系统还包括将图案从掩模转移到磁记录装置。 在另一方面,该方法和系统包括在磁记录装置上提供可延展的掩模层。 在这方面,该方法和系统还包括将印模掩模压入掩模层中并固化掩模层,同时将印模掩模压入掩模层中以提供具有图案的掩模。 图案可以对应于读取传感器和/或垂直磁记录极。 该方法和系统还包括将图案从掩模转移到磁记录装置。

    Method and apparatus for lifting off photoresist beneath an overlayer
    10.
    发明授权
    Method and apparatus for lifting off photoresist beneath an overlayer 有权
    用于剥离覆盖层下面的光致抗蚀剂的方法和装置

    公开(公告)号:US08163185B1

    公开(公告)日:2012-04-24

    申请号:US12059903

    申请日:2008-03-31

    IPC分类号: B44C1/22

    CPC分类号: G11B5/3163 Y10T29/49032

    摘要: A method of lifting off photoresist beneath an overlayer includes providing a structure including photoresist and depositing an overlayer impenetrable to a liftoff solution over the photoresist and a field region around the structure. The method also includes forming a mask over the structure and ion milling to remove the overlayer in the field region not covered by the mask. The method then includes lifting off the photoresist using the liftoff solution.

    摘要翻译: 提供覆盖层下面的光致抗蚀剂的方法包括提供包括光致抗蚀剂的结构,以及沉积在光致抗蚀剂上的不透气的覆盖层和围绕结构的场区域的覆盖层。 该方法还包括在结构上形成掩模和离子研磨以去除未被掩模覆盖的场区域中的覆盖层。 该方法然后包括使用提升溶液提取光致抗蚀剂。