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公开(公告)号：US10340401B2
公开(公告)日：2019-07-02
申请号：US13239969
申请日：2011-09-22
IPC分类号： H01L31/0687 , H01L31/0304 , H01L31/18
摘要： Photovoltaic (PV) cell structures are disclosed. In one example embodiment, a PV cell includes an emitter layer, a base layer adjacent to the emitter layer, and a back surface field (BSF) layer adjacent to the base layer. The BSF layer includes a first layer, and a second layer adjacent to the first layer. The first layer includes a first material and the second layer includes a second material different than the first material.
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公开(公告)号：US20130074934A1
公开(公告)日：2013-03-28
申请号：US13239969
申请日：2011-09-22
IPC分类号： H01L31/0264 , H01L31/0216 , H01L31/04 , H01L31/02
CPC分类号： H01L31/03046 , H01L31/02167 , H01L31/0687 , H01L31/1844 , Y02E10/544
摘要： Photovoltaic (PV) cell structures are disclosed. In one example embodiment, a PV cell includes an emitter layer, a base layer adjacent to the emitter layer, and a back surface field (BSF) layer adjacent to the base layer. The BSF layer includes a first layer, and a second layer adjacent to the first layer. The first layer includes a first material and the second layer includes a second material different than the first material.
摘要翻译： 公开了光伏（PV）电池结构。 在一个示例性实施例中，PV电池包括发射极层，与发射极层相邻的基极层以及与基极层相邻的背面场（BSF）层。 BSF层包括第一层和与第一层相邻的第二层。 第一层包括第一材料，第二层包括不同于第一材料的第二材料。
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公开(公告)号：US09178098B2
公开(公告)日：2015-11-03
申请号：US13407924
申请日：2012-02-29
IPC分类号： H01L31/02 , H01L31/0735 , H01L31/0304 , H01L31/0687 , H01L31/0693
CPC分类号： H01L31/1844 , H01L31/0304 , H01L31/03042 , H01L31/0687 , H01L31/0693 , H01L31/0735 , Y02E10/544
摘要： A solar cell including a base region, a back surface field layer and a delta doping layer positioned between the base region and the back surface field layer.
摘要翻译： 一种太阳能电池，包括位于基极区域和背面场层之间的基极区域，背面场层和δ掺杂层。
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公开(公告)号：US20130220407A1
公开(公告)日：2013-08-29
申请号：US13407924
申请日：2012-02-29
CPC分类号： H01L31/1844 , H01L31/0304 , H01L31/03042 , H01L31/0687 , H01L31/0693 , H01L31/0735 , Y02E10/544
摘要： A solar cell including a base region, a back surface field layer and a delta doping layer positioned between the base region and the back surface field layer.
摘要翻译： 一种太阳能电池，包括位于基极区域和背面场层之间的基极区域，背面场层和δ掺杂层。
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5.发明申请METHOD FOR IMPROVING THE QUALITY OF A TUNNEL JUNCTION IN A SOLAR CELL STRUCTURE 审中-公开改善太阳能电池结构中隧道结质量的方法公开(公告)号：US20120273042A1
公开(公告)日：2012-11-01
申请号：US13098122
申请日：2011-04-29
IPC分类号： H01L31/0687 , H01L31/18 , H01L31/02
CPC分类号： H01L31/0687 , H01L31/1844 , Y02E10/544
摘要： A method of forming a tunnel junction in a solar cell structure alternates between depositing a Group III material and depositing a Group V material on the solar cell structure.
摘要翻译： 在太阳能电池结构中形成隧道结的方法在沉积第III族材料和在太阳能电池结构上沉积第V族材料之间交替。
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6.发明申请Innovative growth method to achieve high quality III-nitride layers for wide band gap optoelectronic and electronic devices 审中-公开创新的生长方法，为宽带隙光电子器件实现高质量的III族氮化物层公开(公告)号：US20060160345A1
公开(公告)日：2006-07-20
申请号：US11036081
申请日：2005-01-14
申请人： Xing-Quan Liu , Huoping Xin , Jin Song , Thomas Choo
发明人： Xing-Quan Liu , Huoping Xin , Jin Song , Thomas Choo
IPC分类号： H01L29/22 , H01L21/28 , H01L31/0296
CPC分类号： H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A method to achieve high quality III-nitride epitaxial layers including AlN, AlGaN, GaN, InGaN, and AlInGaN, by supplying group III precursors constantly and group V precursors periodically with the epitaxial growth systems including metal organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), and molecular beam epitaxy (MBE).
摘要翻译： 通过外延生长系统周期性地提供III族前驱体和V族前体来实现包括AlN，AlGaN，GaN，InGaN和AlInGaN的高质量III族氮化物外延层的方法，包括金属有机化学气相沉积（MOCVD），氢化物 气相外延（HVPE）和分子束外延（MBE）。
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