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    Optical semiconductor device and its manufacturing method
    1.
    发明申请
    Optical semiconductor device and its manufacturing method 审中-公开
    光半导体器件及其制造方法

    公开(公告)号：US20060166386A1

    公开(公告)日：2006-07-27

    申请号：US10547404

    申请日：2005-01-13

    申请人： Atsushi Yamada ,  Yasuaki Nagashima ,  Yoshiharu Shimose ,  Tomoyuki Kikugawa

    发明人： Atsushi Yamada ,  Yasuaki Nagashima ,  Yoshiharu Shimose ,  Tomoyuki Kikugawa

    IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L29/18

    CPC分类号： H01L33/02 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/24 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/141 ,  H01S5/16 ,  H01S5/2201 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/305 ,  H01S5/3213 ,  H01S5/3434 ,  H01S5/34373 ,  H01S2301/18 ,  H01S2304/04

    摘要： An optical semiconductor device (1) has a semiconductor substrate (2) made of InP, an active layer (7) which is formed in parallel with a top surface (2a) of the semiconductor substrate (2) above the semiconductor substrate (2), an n-type first cladding layer (6) made of InGaAsP which is formed under the active layer (7), a p-type second cladding layer (8) made of InP which is formed under the active layer (7), and window regions (4a, 4b) which are formed at least one light-emitting facet of both light-emitting facets of the active layer (7). The window regions are formed between device facets (1a, 1b) from the light-emitting facet. A relationship is established in which, given that a refractive index of the n-type first cladding layer (6) is na, and a refractive index of the p-type second cladding layer (8) is nb, na>nb is obtained that the refractive index na of the n-type first cladding layer (6) is higher than the refractive index nb of the p-type second cladding layer (8), so as to deflect a distribution of electric field strength of a light generated at the active layer (7) toward the n-type first cladding layer (6) side.

    摘要翻译： 光学半导体器件（1）具有由InP制成的半导体衬底（2），与半导体衬底（2）上方的半导体衬底（2）的上表面（2a）平行形成的有源层（7） ），形成在有源层（7）下面的由InGaAsP构成的n型第一包层（6），形成在有源层（7）下方的由InP构成的p型第二包层（8） 和形成有源层（7）的两个发光面的至少一个发光面的窗口区域（4a，4b）。 窗口区域形成在来自发光小面的器件面（1a，1b）之间。 考虑到n型第一包层（6）的折射率为na，p型第二包覆层（8）的折射率为nb，则得到NA> nb， n型第一包层（6）的折射率na高于p型第二包覆层（8）的折射率nb，从而偏转在p型第二包层（8）中产生的光的电场强度分布 有源层（7）朝向n型第一包层（6）侧。

    Semiconductor light emitting device in which high-power light output can be obtained with a simple structure including InGaAsP active layer not less than 3.5 microns and InGaAsP and InP cladding
    3.
    发明授权
    Semiconductor light emitting device in which high-power light output can be obtained with a simple structure including InGaAsP active layer not less than 3.5 microns and InGaAsP and InP cladding 有权
    可以通过包括不小于3.5微米的InGaAsP有源层和InGaAsP和InP包层的简单结构获得高功率光输出的半导体发光器件

    公开(公告)号：US06987285B2

    公开(公告)日：2006-01-17

    申请号：US10692125

    申请日：2003-10-23

    申请人： Yasuaki Nagashima ,  Yoshiharu Shimose ,  Atsushi Yamada ,  Tomoyuki Kikugawa

    发明人： Yasuaki Nagashima ,  Yoshiharu Shimose ,  Atsushi Yamada ,  Tomoyuki Kikugawa

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： B82Y20/00 ,  H01S5/2004 ,  H01S5/227 ,  H01S5/3213 ,  H01S5/3409

    摘要： The semiconductor light emitting device includes a semiconductor substrate formed from InP, an active layer, an n-type cladding layer formed from InGaAsP, and a p-type cladding layer formed from InP. The active layer is formed at the upper side of the semiconductor substrate. The n-type cladding layer and the p-type cladding layer are formed so as to hold the active layer therebetween. The semiconductor light emitting device is, given that, a refractive index of the n-type cladding layer is na, and a refractive index of the p-type cladding layer is nb, set so as to be the relationship of na>nb in which the refractive index na of the n-type cladding layer is higher than the refractive index nb of the p-type cladding layer, and due to the distribution of light generated by the active layer being deflected to the n-type cladding layer side, optical loss by intervalence band light absorption at the p-type cladding layer is suppressed, and high-power light output can be obtained.

    摘要翻译： 半导体发光器件包括由InP形成的半导体衬底，有源层，由InGaAsP形成的n型覆层，以及由InP形成的p型覆层。 有源层形成在半导体衬底的上侧。 形成n型包覆层和p型包覆层，以将活性层保持在其间。 假定n型包覆层的折射率为na，p型包覆层的折射率为nb，则为半导体发光元件，其设定为na> nb的关系，其中 n型包覆层的折射率na高于p型包层的折射率nb，由于由有源层产生的光被分散到n型包层侧，所以光学 抑制p型包覆层的间隔带光吸收的损失，能够获得高功率光输出。