公开(公告)号：US20100190282A1

公开(公告)日：2010-07-29

申请号：US12469755

申请日：2009-05-21

申请人： Yasuaki Yoshida ,  Hitoshi Sakuma

发明人： Yasuaki Yoshida ,  Hitoshi Sakuma

IPC分类号： H01L21/00

CPC分类号： H01S5/4043 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/02272 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4087 ,  H01S2304/04

摘要： A method for manufacturing a multiple-wavelength semiconductor laser comprises: forming a first bar having an array of first semiconductor chips, wherein at least two semiconductor lasers producing light of different wavelengths are monolithically formed; forming a second bar having an array of second semiconductor chips, wherein a semiconductor laser producing light having a different wavelength from the light produced by the semiconductor lasers of the first semiconductor chips is formed; forming a third bar by locating a laser-forming surface of said first bar facing a back surface of the second bar, and joining respective first semiconductor chips in the first bar to respective second semiconductor chips in the second bar; forming scribe lines by irradiating boundaries of the first semiconductor chips and boundaries of the second semiconductor chips with laser beams, and dividing the third bar along the scribe lines into respective chips.

摘要翻译： 一种制造多波长半导体激光器的方法包括：形成具有第一半导体芯片阵列的第一条，其中产生不同波长的光的至少两个半导体激光器是单片形成的; 形成具有第二半导体芯片阵列的第二条形状，其中形成具有与由第一半导体芯片的半导体激光器产生的光不同波长的光的半导体激光器; 通过将所述第一杆的激光形成表面定位成朝向所述第二杆的后表面，并将所述第一杆中的相应的第一半导体芯片连接到所述第二杆中的相应的第二半导体芯片来形成第三棒; 通过用激光束照射第一半导体芯片的边界和第二半导体芯片的边界来形成划线，并且沿着划线将第三条线划分成各自的芯片。

公开(公告)号：US20060268396A1

公开(公告)日：2006-11-30

申请号：US11476077

申请日：2006-06-28

申请人： Kiyohide Sakai ,  Yuuhiko Hamada ,  Takeshi Fujita ,  Yasuaki Yoshida ,  Kimio Shigihara ,  Tatsuo Hatta

发明人： Kiyohide Sakai ,  Yuuhiko Hamada ,  Takeshi Fujita ,  Yasuaki Yoshida ,  Kimio Shigihara ,  Tatsuo Hatta

IPC分类号： H01S3/00 ,  H04B10/12

CPC分类号： B82Y20/00 ,  H01S3/09415 ,  H01S5/02284 ,  H01S5/028 ,  H01S5/0617 ,  H01S5/141 ,  H01S5/146 ,  H01S5/34 ,  H01S5/3406 ,  H01S5/3425 ,  H01S5/34313 ,  H01S5/34353 ,  H01S2301/04

摘要： A semiconductor laser device includes an optical fiber having an optical fiber grating formed therein, a semiconductor laser having an active layer with a single quantum well, for emitting laser light, and a coupling optical system for coupling the laser light emitted out of the semiconductor laser into the optical fiber. The coupling optical system can include a narrow-band filter for adjusting an incident angle of the laser light emitted out of the semiconductor laser. The optical fiber grating can have a reflection bandwidth wider than or substantially equal to a 3dB bandwidth of the gain of the semiconductor laser or a spectrum full width at half maximum of the laser light of the semiconductor laser.

摘要翻译： 一种半导体激光器件包括其中形成有光纤光栅的光纤，具有用于发射激光的单量子阱的有源层的半导体激光器和用于耦合从半导体激光器发出的激光的耦合光学系统 进入光纤。 耦合光学系统可以包括用于调节从半导体激光器发射的激光的入射角的窄带滤光器。 光纤光栅可以具有比半导体激光器的增益的3dB带宽或半导体激光器的激光的半值的全光谱宽度大的或基本上等于的3dB带宽的反射带宽。

公开(公告)号：US06819688B2

公开(公告)日：2004-11-16

申请号：US10073221

申请日：2002-02-13

申请人： Kiyohide Sakai ,  Yuuhiko Hamada ,  Takeshi Fujita ,  Yasuaki Yoshida ,  Kimio Shigihara ,  Tatsuo Hatta

发明人： Kiyohide Sakai ,  Yuuhiko Hamada ,  Takeshi Fujita ,  Yasuaki Yoshida ,  Kimio Shigihara ,  Tatsuo Hatta

IPC分类号： H01S330

CPC分类号： B82Y20/00 ,  H01S3/09415 ,  H01S5/02284 ,  H01S5/028 ,  H01S5/0617 ,  H01S5/141 ,  H01S5/146 ,  H01S5/34 ,  H01S5/3406 ,  H01S5/3425 ,  H01S5/34313 ,  H01S5/34353 ,  H01S2301/04

摘要： A semiconductor laser device comprises an optical fiber having an optical fiber grating formed therein, a semiconductor laser having an active layer with a single quantum well, for emitting laser light, and a coupling optical system for coupling the laser light emitted out of the semiconductor laser into the optical fiber. The coupling optical system can include a narrow-band filter for adjusting an incident angle of the laser light emitted out of the semiconductor laser. The optical fiber grating can have a reflection bandwidth wider than or substantially equal to a 3 dB bandwidth of the gain of the semiconductor laser or a spectrum full width at half maximum of the laser light of the semiconductor laser.

摘要翻译： 一种半导体激光器件包括其中形成有光纤光栅的光纤，具有用于发射激光的单量子阱的有源层的半导体激光器和用于耦合从半导体激光器发出的激光的耦合光学系统 进入光纤。 耦合光学系统可以包括用于调节从半导体激光器发射的激光的入射角的窄带滤光器。 光纤光栅可以具有比半导体激光器的增益的3dB带宽或半导体激光器的激光的半值的光谱全宽更宽或基本上相等的反射带宽。

公开(公告)号：US06765944B2

公开(公告)日：2004-07-20

申请号：US10307365

申请日：2002-12-02

申请人： Tetsuya Yagi ,  Yasuaki Yoshida

发明人： Tetsuya Yagi ,  Yasuaki Yoshida

IPC分类号： H01S522

CPC分类号： H01S5/22 ,  H01S5/02461 ,  H01S5/162 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/2227 ,  H01S2301/18

摘要： A semiconductor laser device includes a stacked structure. The stacked structure includes a first electrode, a substrate of a first conductivity type on the first electrode, a first cladding layer of the first conductivity type, an active layer, a second cladding layer of a second conductivity type opposite the first conductivity type, an insulating layer, and a second electrode. The second cladding layer includes at least first and second portions having thickness different from each other. The first portion is thicker than the second portion. The insulating layer is deposited on the second cladding layer but not on the first portion. The second electrode is electrically connected to the first portion. A product of a reciprocal of layer thickness and heat conductivity of the insulating layer is smaller than 4×108 W/(m2K).

摘要翻译： 半导体激光器件包括堆叠结构。 堆叠结构包括第一电极，第一电极上的第一导电类型的衬底，第一导电类型的第一包层，有源层，与第一导电类型相反的第二导电类型的第二包层， 绝缘层和第二电极。 第二包层至少包括具有彼此不同厚度的第一和第二部分。 第一部分比第二部分厚。 绝缘层沉积在第二覆层上，但不在第一部分上。 第二电极电连接到第一部分。 绝缘层的厚度和导热率的倒数的乘积小于4×10 8 W /（m 2 K）。

公开(公告)号：US20080219313A1

公开(公告)日：2008-09-11

申请号：US11934159

申请日：2007-11-02

申请人： Yasuaki Yoshida

发明人： Yasuaki Yoshida

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0283 ,  H01S5/0287 ,  H01S5/34333

摘要： A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. Further, an adhesive layer and a coating film are on the front facet, and an adhesive layer and a coating film are on the rear facet. The adhesive layers preferably have a thickness of 10 nm or less and preferably include an anodic oxide film of one of Al, Ti, Nb, Zr, Ta, Si, and Hf.

摘要翻译： 半导体激光装置包括沿激光束（X方向）的传播方向延伸的空腔。 前面是在空腔的一端，激光束通过该端面发射。 后面是在腔的另一端。 此外，在前面上具有粘合剂层和涂膜，并且在后面上具有粘合剂层和涂膜。 粘合层的厚度优选为10nm以下，优选包括Al，Ti，Nb，Zr，Ta，Si和Hf中的一种的阳极氧化膜。

公开(公告)号：US5844822A

公开(公告)日：1998-12-01

申请号：US854544

申请日：1997-05-12

申请人： Yasuaki Yoshida

发明人： Yasuaki Yoshida

IPC分类号： H01L29/00 ,  G06F17/50 ,  H01S5/00 ,  H01S3/085 ,  H01S3/103

CPC分类号： G06F17/5018

摘要： A method for simulating and analyzing two-dimensional current and light distributions of a semiconductor laser including an active layer, a cladding layer, and a light absorbing layer includes obtaining initial values of light distribution and carrier distribution, setting a bias condition, and performing current and light distribution analyses. The calculation of the initial value of the two-dimensional light distribution includes calculating a provisional absorption coefficient of the light absorbing layer from the refractive index of the cladding layer, the refractive index of the light absorbing layer, and the laser light wavelength; obtaining a solution in which the real part of the propagation constant of the wave equation is a maximum, using the provisional absorption coefficient; and repeating the calculation, using a sequential approximation method, until the absorption coefficient in the propagation constant equals the absorption coefficient in the original light absorbing layer. The propagation constant in the active layer is then larger than in a light absorbing region. Thus, the center of the light distribution is located in the active layer and the solution, specifying a laser oscillation mode, can be automatically derived without special judgment criteria.

摘要翻译： 一种用于模拟和分析包括有源层，包层和光吸收层的半导体激光器的二维电流和光分布的方法，包括获得光分布和载流子分布的初始值，设置偏置条件，并执行电流 和光分布分析。 二维光分布的初始值的计算包括从包层的折射率，光吸收层的折射率和激光波长计算光吸收层的临时吸收系数; 使用临时吸收系数获得其中波动方程的传播常数的实部最大的解; 并且使用顺序近似方法重复该计算，直到传播常数中的吸收系数等于原始光吸收层中的吸收系数。 有源层中的传播常数然后大于光吸收区域中的传播常数。 因此，光分布的中心位于有源层中，并且指定激光振荡模式的解可以自动导出而没有特别的判断标准。

公开(公告)号：US5835516A

公开(公告)日：1998-11-10

申请号：US569881

申请日：1995-12-08

申请人： Motoharu Miyashita ,  Hirotaka Kizuki ,  Yasuaki Yoshida ,  Yutaka Mihashi ,  Yasutomo Kajikawa ,  Shoichi Karakida ,  Yuji Ohkura

发明人： Motoharu Miyashita ,  Hirotaka Kizuki ,  Yasuaki Yoshida ,  Yutaka Mihashi ,  Yasutomo Kajikawa ,  Shoichi Karakida ,  Yuji Ohkura

IPC分类号： H01L21/306 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19 ,  H01L21/20

CPC分类号： H01S5/2231 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2206 ,  H01S5/221 ,  H01S5/32316

摘要： A method of fabricating a semiconductor laser device includes successively forming an active layer and upper cladding layers on a lower cladding layer, etching and removing portions except regions of the upper cladding layers where a current is to flow to form a stripe-shaped ridge structure, and forming a buffer layer comprising Al.sub.x Ga.sub.1-x As having an Al composition ratio x of 0 to 0.3 on a surface of the upper cladding layers exposed by the etching and forming a current blocking layer of first conductivity type Al.sub.y Ga.sub.1-y As having an Al composition ratio y of at least 0.5 on the buffer layer to bury portions of the upper cladding layers which are not removed by the etching process. Therefore, since the layer grown on the upper cladding layer exposed by etching of AlGaAs or GaAs having a low Al composition ratio (0-0.3), three-dimensional growth of and crystalline defects in the buffer layer are suppressed. Current leakage is suppressed, so that a semiconductor laser device having a low threshold current and a high efficiency is fabricated with a stable yield.

摘要翻译： 一种制造半导体激光器件的方法包括：在下包层上连续形成有源层和上覆层，蚀刻除去电流流过的上覆层的区域以外的部分，形成条状脊结构， 以及在通过蚀刻暴露的上覆层的表面上形成包含Al组成比x为0至0.3的Al x Ga 1-x As的缓冲层，并形成具有Al组成比y的第一导电型AlyGa1-yAs的电流阻挡层 在缓冲层上至少为0.5以掩埋未被蚀刻工艺除去的上覆层的部分。 因此，由于通过蚀刻Al AlAs或Al组成比低（0-0.3）的GaAs而暴露在上包层上的层，抑制了缓冲层的三维生长和晶体缺陷。 电流泄漏被抑制，从而以稳定的产量制造具有低阈值电流和高效率的半导体激光器件。

公开(公告)号：US5581570A

公开(公告)日：1996-12-03

申请号：US408301

申请日：1995-03-22

申请人： Yasuaki Yoshida ,  Akira Takemoto

发明人： Yasuaki Yoshida ,  Akira Takemoto

IPC分类号： H01S5/00 ,  H01S5/065 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/34 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/34 ,  H01S5/0658 ,  H01S5/2219 ,  H01S5/2231

摘要： A semiconductor laser device includes semiconductor layers including an active layer and cladding layers sandwiching the active layer and current injecting structure for regulating a region in the active layer into which current is injected. A light confinement coefficient in the current injection region perpendicular to the active layer is smaller than a light confinement coefficient in the same direction of a saturable absorption region. The function of the saturable absorption region is enhanced and pulsation oscillation can be produced at a high power light output.

摘要翻译： 半导体激光器件包括半导体层，其包括有源层和夹持有源层的覆层以及用于调节注入电流的有源层中的区域的电流注入结构。 垂直于有源层的电流注入区域中的光限制系数小于饱和吸收区域的相同方向上的光限制系数。 可饱和吸收区域的功能得到增强，在高功率光输出时可产生脉动振荡。

公开(公告)号：US20070211776A1

公开(公告)日：2007-09-13

申请号：US11680674

申请日：2007-03-01

申请人： Yasuaki Yoshida ,  Yasuyuki Nakagawa

发明人： Yasuaki Yoshida ,  Yasuyuki Nakagawa

IPC分类号： H01S5/00

CPC分类号： H01S5/028 ,  H01S5/0287 ,  H01S5/22 ,  H01S5/32341

摘要： In a semiconductor laser having a first facet (front facet) through which laser light is emitted and a second facet (rear facet), and a first coating film composed of a single-layer dielectric film on the first facet. The oscillating wavelength of the laser light is λ and the refractive index of the dielectric film is n. The thickness of the dielectric film is within a range between 5% and 50% of λ/4n.

摘要翻译： 在具有通过其发射激光的第一面（前刻面）和第二刻面（后面）的半导体激光器中，以及由第一面上的单层电介质膜构成的第一涂膜。 激光的振荡波长为λ，电介质膜的折射率为n。 电介质膜的厚度在λ/ 4n的5％至50％之间的范围内。

公开(公告)号：US20060098704A1

公开(公告)日：2006-05-11

申请号：US11269627

申请日：2005-11-09

申请人： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

发明人： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

IPC分类号： H01S5/00

CPC分类号： H01S5/22

摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.

摘要翻译： 提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的 。 确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的大小（E2）提供。 大于0.0001且小于0.01的比E1 / E2。 在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。 因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状 水平方向的远场模式是稳定的。