摘要:
A balun circuit includes a first CPW line 11, a second CPW line 12a, and a third CPW line 12b that serve as signal input/output ports; a first CPS line 14a that is a differential transmission line, the first CPS line 14a relaying the first CPW line 11 to the second CPW line 12a; a second CPS line 14b that is a differential transmission line, the second CPS line 14b relaying the first CPW line 11 to the third CPW line 12b; and at least one connection section that connects grounded conductors of each of the first CPW line 11, the second CPW line 12a, and the third CPW line 12b.
摘要:
A balun circuit includes a first CPW line 11, a second CPW line 12a, and a third CPW line 12b that serve as signal input/output ports; a first CPS line 14a that is a differential transmission line, the first CPS line 14a relaying the first CPW line 11 to the second CPW line 12a; a second CPS line 14b that is a differential transmission line, the second CPS line 14b relaying the first CPW line 11 to the third CPW line 12b; and at least one connection section that connects grounded conductors of each of the first CPW line 11, the second CPW line 12a, and the third CPW line 12b.
摘要:
The present invention intends to improve communication efficiency between two communication apparatuses each engaged in the communication by full duplex communication method by using a surplus band of the one to transmission band of the other. A first bandwidth required by a first communication apparatus (A) at data transmission and a second bandwidth required by a second communication apparatus (B) at data transmission are presumed. Next, the first bandwidth presumed as mentioned is compared to a first bandwidth used which the first communication apparatus (A) currently uses and at the same time, the second bandwidth presumed as mentioned is compared to a second bandwidth used which the second communication apparatus (B) currently uses. The first bandwidth and the second bandwidth are then adjusted, and a third bandwidth which the first communication apparatus (A) uses at data transmission and a fourth bandwidth which the second communication apparatus (B) uses are determined.
摘要:
The present invention intends to improve communication efficiency between two communication apparatuses each engaged in the communication by full duplex communication method by using a surplus band of the one to transmission band of the other. A first bandwidth required by a first communication apparatus (A) at data transmission and a second bandwidth required by a second communication apparatus (B) at data transmission are presumed. Next, the first bandwidth presumed as mentioned is compared to a first bandwidth used which the first communication apparatus (A) currently uses and at the same time, the second bandwidth presumed as mentioned is compared to a second bandwidth used which the second communication apparatus (B) currently uses. The first bandwidth and the second bandwidth are then adjusted, and a third bandwidth which the first communication apparatus (A) uses at data transmission and a fourth bandwidth which the second communication apparatus (B) uses are determined.
摘要:
A negative resistance circuit having a transistor and a plurality of distributed constant lines respectively connected to the three terminals of the transistor further comprises an inductive element or a capacitive element connected between the output terminal of the negative resistance circuit and the ground potential. The negative resistance is adjusted through the inductance of the inductive element or the capacitance of the capacitive element.
摘要:
The present invention provides a microwave and millimeter wave circuit apparatus having a reduced size and which can be produced easily, improving productivity. The microwave and millimeter wave circuit apparatus includes: a grounding conductive layer 4 grounded; a first dielectric layer 5 formed on this grounding conductive layer 4; a signal line selectively formed on this first dielectric layer 5; a second dielectric layer 7 covering at least a portion of the signal line 6; a cavity 2 formed in this second dielectric layer 7 and extending to the signal line 6; a monolithic microwave integrated circuit 1 arranged in the cavity 2 and connected to the signal line 6; and an antenna connected to the signal line 6.
摘要:
The present invention provides a filter exhibiting excellent filter characteristics and having less number of stages. A dielectric substrate (1) has one surface connected to a top conductor (2) and an opposite surface connected to a bottom conductor (3). A pair of rows of via-holes connecting together the top conductor (2) and the bottom conductor (3) are formed along the signal transfer direction. A slit (6) is formed in a portion of the top conductor (2) overlying the central resonator among a plurality of resonators. The slit (6) extends in a direction perpendicular to the signal transfer direction. Slits (7, 8) are formed in each of portions of the top conductor (2) overlying resonators disposed at both ends. A coplanar waveguide (9) mounted on the top conductor (2) is connected to the slit (7).
摘要:
A conductive layer is formed on each of the upper and lower surfaces of a dielectric substrate, and the two conductive layers are connected by rows of via-holes that are formed which a spacing that is less than or equal to ½ of the wavelength in the dielectric substrate in the resonance frequency, whereby n stages of dielectric resonators and input/output waveguide structures are formed. If the number n of stages is assumed to be 3, the first-stage resonator and the second-stage resonator are coupled by an electromagnetic field by means of via-holes of a first spacing; the second-stage resonator and the third-stage resonator are coupled by an electromagnetic by means of via-holes of a second spacing, whereby a filter is formed. The input/output waveguide structure and the filter are coupled by an electromagnetic by means of via-holes of a fourth spacing. The first-stage resonator and the third-stage resonator are coupled by an electromagnetic field by means of via-holes of a third spacing.
摘要:
A high frequency circuit substrate comprises a first high frequency circuit substrate including at least a first dielectric material layer, a first conductor layer, a second dielectric material layer and a second conductor layer, which are laminated in the named order, the first conductor layer having a first slot formed therein, and the second conductor layer forming a transmission line, the first dielectric material layer having a first opening exposing the first slot at its bottom. The high frequency circuit substrate also comprises a second high frequency circuit substrate including at least a third dielectric material layer, a third conductor layer, a fourth dielectric material layer and a fourth conductor layer, which are laminated in the named order, the third conductor layer having a second slot formed therein, and the fourth conductor layer forming a transmission line, the third dielectric material layer having a second opening exposing the second slot at its bottom. The first high frequency circuit substrate and the first high frequency circuit substrate are bonded to each other in such a manner that the first dielectric material layer and the third dielectric material layer are faced to each other and the first slot and the second slot are electromagnetically coupled, by inserting one side and the other side of a conductor plate having a through hole into the first opening and the second opening, respectively.
摘要:
A multi-layer substrate comprises a first dielectric layer, a coplanar waveguide line formed on a first surface of the first dielectric layer, the coplanar waveguide line including a signal conductor and a pair of ground conductor layers positioned at opposite sides of the signal conductor, separately from the signal conductor, and a second dielectric layer formed to cover the coplanar waveguide line and the first dielectric layer and having an opening positioned at least on the signal conductor of the coplanar waveguide line. A thickness of the first dielectric layer is smaller than the value of c/{4f·(∈1−1)½}, where c is velocity of light, f is a frequency of a signal propagating in the signal line, and ∈1 is a dielectric constant of the first dielectric layer.