公开(公告)号：US06461533B1

公开(公告)日：2002-10-08

申请号：US09090476

申请日：1998-06-04

申请人： Yasuhiro Horiike ,  Yoshio Ishikawa ,  Keiji Horioka

发明人： Yasuhiro Horiike ,  Yoshio Ishikawa ,  Keiji Horioka

IPC分类号： C09K1300

CPC分类号： H01L21/31116 ,  C09K13/08

摘要： A method of etching silicon oxide with high selectivity to a photoresist mask and to a silicon-containing substrate comprising exposing the silicon oxide to a plasma of a precursor etch gas of a fluorocarbon and an organic silane containing at least one organic group. When at least about 10% by weight of the silane is present in the etch gas, the selectivity between the silicon oxide and the photoresist mask layer, and between the silicon oxide and the silicon-containing substrate, increases markedly. High aspect ratio, submicron size openings can be etched.

摘要翻译： 一种对光致抗蚀剂掩模和含硅衬底具有高选择性的氧化硅蚀刻的方法，包括将氧化硅暴露于含有至少一个有机基团的碳氟化合物的前体蚀刻气体的等离子体和含有有机硅烷的等离子体。 当蚀刻气体中存在至少约10重量％的硅烷时，氧化硅和光致抗蚀剂掩模层之间以及氧化硅和含硅衬底之间的选择性显着增加。 高长宽比，亚微米尺寸的开口可被蚀刻。

公开(公告)号：US06800213B2

公开(公告)日：2004-10-05

申请号：US10165249

申请日：2002-06-07

申请人： Ji Ding ,  Hidehiro Kojiri ,  Yoshio Ishikawa ,  Keiji Horioka ,  Ruiping Wang ,  Robert W. Wu ,  Hoiman (Raymond) Hung

发明人： Ji Ding ,  Hidehiro Kojiri ,  Yoshio Ishikawa ,  Keiji Horioka ,  Ruiping Wang ,  Robert W. Wu ,  Hoiman (Raymond) Hung

IPC分类号： H01L213065

CPC分类号： H01L21/31116

摘要： An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.

摘要翻译： 具有F / C比小于2，优选C4F6，含氧气体如O 2或CO，重质碳氟化合物或氢氟碳化合物的稀无机氟碳氟化合物和诸如Ar或Xe的稀有稀释气体的氧化物蚀刻配方 。 选择前三种气体的量，使得比值（FH）/（CO）至少为1.5且不大于2.或者，气体混合物可以包括重碳氟化合物，四氟化碳和稀释剂，其比例 的前两个选择的比例F / C在1.5和2之间。

公开(公告)号：US5259923A

公开(公告)日：1993-11-09

申请号：US889627

申请日：1992-05-28

申请人： Masaru Hori ,  Keiji Horioka ,  Haruo Okano ,  Masao Ito ,  Masahito Hiratsuka ,  Yoshio Ishikawa

发明人： Masaru Hori ,  Keiji Horioka ,  Haruo Okano ,  Masao Ito ,  Masahito Hiratsuka ,  Yoshio Ishikawa

IPC分类号： H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/3213 ,  H01L23/52 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/00

CPC分类号： H01L21/32136 ,  H01L21/32137 ,  H01L2924/0002

摘要： A dry etching method, wherein a multilayer film including one selected from tungsten, molybdenum, and a silicide thereof, as the first layer, and polycrystal silicon as the second layer underlying is formed on a silicon oxide insulation film, a substrate having a mask pattern on the multilayer film is placed in a vacuum container, an etching gas is introduced into the vacuum container, and an electrical discharge is induced by applying an electrical field to the vacuum container, thereby anisotropically etching the multilayered film in accordance with the mask pattern. The method comprises the first etching step for etching the first layer by use of the first gas selected from fluorine, sulfur hexafluoride, and nitrogen trifuoride, or a mixture gas containing the first gas and the second gas selected from hydrogen chloride, hydrogen bromide, chlorine, bromine, and carbon tetrachloride, as an etching gas, and the second etching step for etching the second layer by use of the second gas, or a mixture gas containing the second gas and the third gas selected from an inert gas, nitrogen gas, oxygen gas, silicon tetrachloride gas and carbon monoxide gas, as an etching gas.

公开(公告)号：US06432318B1

公开(公告)日：2002-08-13

申请号：US09506112

申请日：2000-02-17

申请人： Ji Ding ,  Hidehiro Kojiri ,  Yoshio Ishikawa ,  Keiji Horioka ,  Ruiping Wang ,  Robert W. Wu ,  Hoiman Hung

发明人： Ji Ding ,  Hidehiro Kojiri ,  Yoshio Ishikawa ,  Keiji Horioka ,  Ruiping Wang ,  Robert W. Wu ,  Hoiman Hung

IPC分类号： H01L213065

CPC分类号： H01L21/31116

摘要： An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2 such as C4F6 or C5F8, an oxygen-containing gas such as O2, CO or CO2, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.

摘要翻译： 氧化物蚀刻配方包括F / C比小于2的重氢无碳氟化合物，例如C 4 F 6或C 5 F 8，含氧气体如O 2，CO或CO 2，较轻碳氟化合物或氢氟烃，以及稀有稀释气体 作为Ar或Xe。 选择前三种气体的量，使得比值（FH）/（CO）至少为1.5且不大于2.或者，气体混合物可以包括重碳氟化合物，四氟化碳和稀释剂，其比例 的前两个被选择的比例F / C在1.5和2之间。

公开(公告)号：US5717294A

公开(公告)日：1998-02-10

申请号：US395503

申请日：1995-02-27

申请人： Itsuko Sakai ,  Makoto Sekine ,  Keiji Horioka ,  Yukimasa Yoshida ,  Koichiro Inazawa ,  Masahiro Ogasawara ,  Yoshio Ishikawa ,  Kazuo Eguchi

发明人： Itsuko Sakai ,  Makoto Sekine ,  Keiji Horioka ,  Yukimasa Yoshida ,  Koichiro Inazawa ,  Masahiro Ogasawara ,  Yoshio Ishikawa ,  Kazuo Eguchi

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  B23K10/00 ,  H05H1/16

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A vacuum chamber contains a first electrode for supporting a wafer, and a second electrode opposing the first electrode. A supply system and an exhaustion system are connected to the vacuum chamber. The system supplies a reactive gas into the chamber, and the system exhaust the used gas from the chamber. A radio-frequency power supply is connected to the first electrode, for supplying power between the electrodes to generate an electric field E. An annular magnet assembly is provided around the chamber, for generating a magnetic field B which has a central plane intersecting with the electric field E. The magnet assembly has a plurality of magnet elements which have different magnetization axes in the central plane of the magnetic field. Electrons drift due to a force resulting from an outer product (E.times.B) of the electric field E and the magnetic field B. The central plane of the magnetic field B is shifted upwards from the target surface of the wafer, such that the magnetic force lines of the magnetic field intersect with the target surface of the substrate.

摘要翻译： 真空室包含用于支撑晶片的第一电极和与第一电极相对的第二电极。 供应系统和耗尽系统连接到真空室。 该系统将反应性气体供应到室中，并且系统从室中排出废气。 射频电源连接到第一电极，用于在电极之间提供电力以产生电场E.环形磁体组件设置在室周围，用于产生磁场B，磁场B具有与中心平面相交的中心平面 电场E.磁体组件具有在磁场的中心平面中具有不同磁化轴的多个磁体元件。 电子由于电场E的外部产物（ExB）和磁场B产生的力而漂移。磁场B的中心平面从晶片的目标表面向上移动，使得磁力线 的磁场与基板的目标表面相交。

公开(公告)号：US5271788A

公开(公告)日：1993-12-21

申请号：US917361

申请日：1992-07-23

申请人： Makoto Hasegawa ,  Takaya Matsushita ,  Keiji Horioka ,  Isahiro Hasegawa ,  Toshihisa Nozawa ,  Yoshio Ishikawa ,  Masahito Hiratsuka ,  Satoshi Kaneko

发明人： Makoto Hasegawa ,  Takaya Matsushita ,  Keiji Horioka ,  Isahiro Hasegawa ,  Toshihisa Nozawa ,  Yoshio Ishikawa ,  Masahito Hiratsuka ,  Satoshi Kaneko

IPC分类号： H01J37/32 ,  C23F1/02

CPC分类号： H01J37/32082 ,  H01J37/3255 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/3266

摘要： A magnetron plasma etching apparatus comprises a suscepter serving as an electrode on which a silicon wafer is mounted. A carbon ring having an outer diameter larger than the diameter of the wafer and an electrical resistance lower than that of the wafer, is arranged around the suscepter. The carbon ring is electrically connected to the suscepter. The carbon ring improves uniformity of etching of the wafer.

公开(公告)号：US07374636B2

公开(公告)日：2008-05-20

申请号：US10205870

申请日：2002-07-26

申请人： Keiji Horioka ,  Chun Yan ,  Taeho Shin ,  Roger Alan Lindley ,  Panyin Hughes ,  Douglas H. Burns ,  Evans Y. Lee ,  Bryan Y. Pu ,  Qi Li ,  Mahmoud Dahimene

发明人： Keiji Horioka ,  Chun Yan ,  Taeho Shin ,  Roger Alan Lindley ,  Panyin Hughes ,  Douglas H. Burns ,  Evans Y. Lee ,  Bryan Y. Pu ,  Qi Li ,  Mahmoud Dahimene

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.

摘要翻译： 一种用于控制磁增强等离子体反应器内的磁场梯度的方法和装置。 该装置包括支撑外壳内的晶片的阴极基座，靠近外壳定位的多个电磁体，用于在外壳中产生磁场，并且磁场控制元件位于电磁体附近，用于控制靠近特定区域的磁场 的晶片。

公开(公告)号：US5660744A

公开(公告)日：1997-08-26

申请号：US492322

申请日：1995-06-19

申请人： Makoto Sekine ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura ,  Isahiro Hasegawa ,  Masaki Narita

发明人： Makoto Sekine ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura ,  Isahiro Hasegawa ,  Masaki Narita

IPC分类号： H01J37/32 ,  B23K10/00

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A surface processing apparatus comprises a container provided with a first electrode and a second electrode disposed opposite to the first electrode for supporting a substrate to be processed and filled with a gas at a reduced pressure, an electric field generator for generating an electric field between the first and second electrodes, and a magnetic field generator for generating a magnetic field in the vacuum container. The magnetic field generator comprises a plurality of magnet element groups arranged in a circle around the container so as to form a ring, each of the magnet element groups having an axis directed to a center of the circle and a synthetic magnetization direction and comprising one or a plurality of magnet elements having respective magnetization directions which are synthesized to be equal to the synthetic magnetization direction of the each of the magnetic element groups. One of the magnet element groups is so disposed that the synthetic magnetization direction thereof coincides with the axis thereof, and each of the magnet element groups other than the one magnet element group is so disposed that an angle of the synthetic magnetization direction thereof relative to the synthetic magnetization direction of the one magnet element group is substantially twice an angle of the axis thereof relative to the axis of the one magnet element group.

摘要翻译： 表面处理装置包括：容器，其设置有第一电极和与第一电极相对设置的第二电极，用于支撑待处理的基板并在减压下填充气体;电场发生器，用于在第一电极之间产生电场; 第一和第二电极以及用于在真空容器中产生磁场的磁场发生器。 磁场发生器包括围绕容器布置成圆形的多个磁体元件组，以便形成环，每个磁体元件组具有指向圆心的合成磁化方向的轴线，并包括一个或多个 多个磁体元件，其各自的磁化方向被合成为等于每个磁性元件组的合成磁化方向。 一个磁体元件组被设置成合成磁化方向与其轴线重合，并且除了一个磁体元件组之外的每个磁体元件组被设置成使得其合成磁化方向相对于 一个磁体元件组的合成磁化方向基本上是相对于一个磁体元件组的轴线的轴的两倍。

公开(公告)号：US5607599A

公开(公告)日：1997-03-04

申请号：US558507

申请日：1995-11-16

申请人： Katsutaro Ichihara ,  Michiko Okubo ,  Keiji Horioka

发明人： Katsutaro Ichihara ,  Michiko Okubo ,  Keiji Horioka

IPC分类号： C23F4/00 ,  H01F41/02 ,  H01L21/8246 ,  H01L27/22 ,  G11C11/14 ,  C23F1/12

CPC分类号： H01F41/026 ,  B82Y10/00 ,  C23F4/00 ,  H01L43/12

摘要： Disclosed is a method of processing a magnetic thin film, comprising the steps of disposing a mask having a predetermined pattern on a magnetic thin film consisting of a magnetic material containing at least one element selected from the group consisting of Fe, Co and Ni, supplying a reactive gas containing activated BCl.sub.3 to an exposed portion of said magnetic thin film and allowing said reactive gas to react with said magnetic material, and removing the magnetic thin film of the exposed portion to perform a desired patterning.

摘要翻译： 公开了一种处理磁性薄膜的方法，包括以下步骤：将具有预定图案的掩模设置在由含有选自Fe，Co和Ni中的至少一种元素的磁性材料构成的磁性薄膜上， 含有活化的BCl 3的活性气体到所述磁性薄膜的暴露部分，并允许所述活性气体与所述磁性材料反应，以及除去所述暴露部分的磁性薄膜以进行所需的图案化。

公开(公告)号：US5444207A

公开(公告)日：1995-08-22

申请号：US37169

申请日：1993-03-26

申请人： Makoto Sekine ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura ,  Isahiro Hasegawa ,  Masaki Narita

发明人： Makoto Sekine ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura ,  Isahiro Hasegawa ,  Masaki Narita

IPC分类号： B23K10/00 ,  H01J37/32 ,  H01L21/00 ,  H05H1/18

CPC分类号： H01J37/32623 ,  B23K10/003 ,  H01J37/3266

摘要： A surface processing device and method for forming a magnetic field having a uniform strength over a wide area of an electrode surface to generate a uniform high density plasma over the overall surface of a wafer. The device comprises a vacuum container contains a first electrode and a second electrode disposed opposite to the first electrode; a gas feeding system for feeding a predetermined gas into the vacuum container; an evacuating system for maintaining the inside of the container at a reduced pressure; an electric field generating system for generating an electric field in a region between the first and second electrodes; and a magnetic field generating system for generating a magnetic field in the vacuum container. The magnetic field generating system comprising a plurality of magnets arranged around the outer periphery of the container so as to form a ring in such a manner that directions of magnetization thereof differ from adjacent magnetic element making a 720 degree rotation along the circumference of said ring.

摘要翻译： 一种用于形成在电极表面的广泛区域上具有均匀强度的磁场的表面处理装置和方法，以在晶片的整个表面上产生均匀的高密度等离子体。 该装置包括：真空容器，包含第一电极和与第一电极相对设置的第二电极; 用于将预定气体供给到真空容器中的气体供给系统; 用于在减压下保持容器内部的排气系统; 用于在第一和第二电极之间的区域中产生电场的电场产生系统; 以及用于在真空容器中产生磁场的磁场产生系统。 磁场产生系统包括围绕容器的外周布置的多个磁体，以便形成环，使得其磁化方向与相邻的磁性元件不同，沿着所述环的圆周旋转720度。