公开(公告)号：US06461533B1

公开(公告)日：2002-10-08

申请号：US09090476

申请日：1998-06-04

申请人： Yasuhiro Horiike ,  Yoshio Ishikawa ,  Keiji Horioka

发明人： Yasuhiro Horiike ,  Yoshio Ishikawa ,  Keiji Horioka

IPC分类号： C09K1300

CPC分类号： H01L21/31116 ,  C09K13/08

摘要： A method of etching silicon oxide with high selectivity to a photoresist mask and to a silicon-containing substrate comprising exposing the silicon oxide to a plasma of a precursor etch gas of a fluorocarbon and an organic silane containing at least one organic group. When at least about 10% by weight of the silane is present in the etch gas, the selectivity between the silicon oxide and the photoresist mask layer, and between the silicon oxide and the silicon-containing substrate, increases markedly. High aspect ratio, submicron size openings can be etched.

摘要翻译： 一种对光致抗蚀剂掩模和含硅衬底具有高选择性的氧化硅蚀刻的方法，包括将氧化硅暴露于含有至少一个有机基团的碳氟化合物的前体蚀刻气体的等离子体和含有有机硅烷的等离子体。 当蚀刻气体中存在至少约10重量％的硅烷时，氧化硅和光致抗蚀剂掩模层之间以及氧化硅和含硅衬底之间的选择性显着增加。 高长宽比，亚微米尺寸的开口可被蚀刻。

公开(公告)号：US06800213B2

公开(公告)日：2004-10-05

申请号：US10165249

申请日：2002-06-07

申请人： Ji Ding ,  Hidehiro Kojiri ,  Yoshio Ishikawa ,  Keiji Horioka ,  Ruiping Wang ,  Robert W. Wu ,  Hoiman (Raymond) Hung

发明人： Ji Ding ,  Hidehiro Kojiri ,  Yoshio Ishikawa ,  Keiji Horioka ,  Ruiping Wang ,  Robert W. Wu ,  Hoiman (Raymond) Hung

IPC分类号： H01L213065

CPC分类号： H01L21/31116

摘要： An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.

摘要翻译： 具有F / C比小于2，优选C4F6，含氧气体如O 2或CO，重质碳氟化合物或氢氟碳化合物的稀无机氟碳氟化合物和诸如Ar或Xe的稀有稀释气体的氧化物蚀刻配方 。 选择前三种气体的量，使得比值（FH）/（CO）至少为1.5且不大于2.或者，气体混合物可以包括重碳氟化合物，四氟化碳和稀释剂，其比例 的前两个选择的比例F / C在1.5和2之间。

公开(公告)号：US5271788A

公开(公告)日：1993-12-21

申请号：US917361

申请日：1992-07-23

申请人： Makoto Hasegawa ,  Takaya Matsushita ,  Keiji Horioka ,  Isahiro Hasegawa ,  Toshihisa Nozawa ,  Yoshio Ishikawa ,  Masahito Hiratsuka ,  Satoshi Kaneko

发明人： Makoto Hasegawa ,  Takaya Matsushita ,  Keiji Horioka ,  Isahiro Hasegawa ,  Toshihisa Nozawa ,  Yoshio Ishikawa ,  Masahito Hiratsuka ,  Satoshi Kaneko

IPC分类号： H01J37/32 ,  C23F1/02

CPC分类号： H01J37/32082 ,  H01J37/3255 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/3266

摘要： A magnetron plasma etching apparatus comprises a suscepter serving as an electrode on which a silicon wafer is mounted. A carbon ring having an outer diameter larger than the diameter of the wafer and an electrical resistance lower than that of the wafer, is arranged around the suscepter. The carbon ring is electrically connected to the suscepter. The carbon ring improves uniformity of etching of the wafer.

公开(公告)号：US06432318B1

公开(公告)日：2002-08-13

申请号：US09506112

申请日：2000-02-17

申请人： Ji Ding ,  Hidehiro Kojiri ,  Yoshio Ishikawa ,  Keiji Horioka ,  Ruiping Wang ,  Robert W. Wu ,  Hoiman Hung

发明人： Ji Ding ,  Hidehiro Kojiri ,  Yoshio Ishikawa ,  Keiji Horioka ,  Ruiping Wang ,  Robert W. Wu ,  Hoiman Hung

IPC分类号： H01L213065

CPC分类号： H01L21/31116

摘要： An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2 such as C4F6 or C5F8, an oxygen-containing gas such as O2, CO or CO2, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.

摘要翻译： 氧化物蚀刻配方包括F / C比小于2的重氢无碳氟化合物，例如C 4 F 6或C 5 F 8，含氧气体如O 2，CO或CO 2，较轻碳氟化合物或氢氟烃，以及稀有稀释气体 作为Ar或Xe。 选择前三种气体的量，使得比值（FH）/（CO）至少为1.5且不大于2.或者，气体混合物可以包括重碳氟化合物，四氟化碳和稀释剂，其比例 的前两个被选择的比例F / C在1.5和2之间。

公开(公告)号：US5717294A

公开(公告)日：1998-02-10

申请号：US395503

申请日：1995-02-27

申请人： Itsuko Sakai ,  Makoto Sekine ,  Keiji Horioka ,  Yukimasa Yoshida ,  Koichiro Inazawa ,  Masahiro Ogasawara ,  Yoshio Ishikawa ,  Kazuo Eguchi

发明人： Itsuko Sakai ,  Makoto Sekine ,  Keiji Horioka ,  Yukimasa Yoshida ,  Koichiro Inazawa ,  Masahiro Ogasawara ,  Yoshio Ishikawa ,  Kazuo Eguchi

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  B23K10/00 ,  H05H1/16

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A vacuum chamber contains a first electrode for supporting a wafer, and a second electrode opposing the first electrode. A supply system and an exhaustion system are connected to the vacuum chamber. The system supplies a reactive gas into the chamber, and the system exhaust the used gas from the chamber. A radio-frequency power supply is connected to the first electrode, for supplying power between the electrodes to generate an electric field E. An annular magnet assembly is provided around the chamber, for generating a magnetic field B which has a central plane intersecting with the electric field E. The magnet assembly has a plurality of magnet elements which have different magnetization axes in the central plane of the magnetic field. Electrons drift due to a force resulting from an outer product (E.times.B) of the electric field E and the magnetic field B. The central plane of the magnetic field B is shifted upwards from the target surface of the wafer, such that the magnetic force lines of the magnetic field intersect with the target surface of the substrate.

摘要翻译： 真空室包含用于支撑晶片的第一电极和与第一电极相对的第二电极。 供应系统和耗尽系统连接到真空室。 该系统将反应性气体供应到室中，并且系统从室中排出废气。 射频电源连接到第一电极，用于在电极之间提供电力以产生电场E.环形磁体组件设置在室周围，用于产生磁场B，磁场B具有与中心平面相交的中心平面 电场E.磁体组件具有在磁场的中心平面中具有不同磁化轴的多个磁体元件。 电子由于电场E的外部产物（ExB）和磁场B产生的力而漂移。磁场B的中心平面从晶片的目标表面向上移动，使得磁力线 的磁场与基板的目标表面相交。

公开(公告)号：US5259923A

公开(公告)日：1993-11-09

申请号：US889627

申请日：1992-05-28

申请人： Masaru Hori ,  Keiji Horioka ,  Haruo Okano ,  Masao Ito ,  Masahito Hiratsuka ,  Yoshio Ishikawa

发明人： Masaru Hori ,  Keiji Horioka ,  Haruo Okano ,  Masao Ito ,  Masahito Hiratsuka ,  Yoshio Ishikawa

IPC分类号： H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/3213 ,  H01L23/52 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/00

CPC分类号： H01L21/32136 ,  H01L21/32137 ,  H01L2924/0002

摘要： A dry etching method, wherein a multilayer film including one selected from tungsten, molybdenum, and a silicide thereof, as the first layer, and polycrystal silicon as the second layer underlying is formed on a silicon oxide insulation film, a substrate having a mask pattern on the multilayer film is placed in a vacuum container, an etching gas is introduced into the vacuum container, and an electrical discharge is induced by applying an electrical field to the vacuum container, thereby anisotropically etching the multilayered film in accordance with the mask pattern. The method comprises the first etching step for etching the first layer by use of the first gas selected from fluorine, sulfur hexafluoride, and nitrogen trifuoride, or a mixture gas containing the first gas and the second gas selected from hydrogen chloride, hydrogen bromide, chlorine, bromine, and carbon tetrachloride, as an etching gas, and the second etching step for etching the second layer by use of the second gas, or a mixture gas containing the second gas and the third gas selected from an inert gas, nitrogen gas, oxygen gas, silicon tetrachloride gas and carbon monoxide gas, as an etching gas.

公开(公告)号：US5462778A

公开(公告)日：1995-10-31

申请号：US67492

申请日：1993-05-13

申请人： Yoshio Ishikawa

发明人： Yoshio Ishikawa

IPC分类号： D01D5/253 ,  D03D27/00 ,  E01C13/08 ,  A01N3/00 ,  B28B5/00 ,  B32B3/02

CPC分类号： D02G3/445 ,  D01D5/253 ,  D03D27/00 ,  E01C13/08 ,  D10B2505/202 ,  Y10T428/23957 ,  Y10T428/249922 ,  Y10T428/2925 ,  Y10T428/2973

摘要： An artificial turf with high water rentivity. A cut pile is formed over the surface of a backing structure by implanting a multiplicity of tufts. Each tuft comprises one or a plurality of pile yarns. Each of the pile yarns is composed of one flat filament or a plurality of bundled flat filaments twisted and fixed in the twisted state into a slender form having an approximately spiral cross section. A pile yarn for such artificial turfs and a process for producing such a pile yarn.

摘要翻译： 高水租的人造草皮。 通过植入多个簇，在背衬结构的表面上形成切割桩。 每个簇包括一个或多个绒头纱线。 每个绒头纱线由一个扁平丝或多个以扭曲状态扭曲和固定的扁平扁丝组成，具有大致螺旋形横截面的细长形式。 用于这种人造草皮的绒头纱线和用于生产这种绒毛纱线的方法。

公开(公告)号：US5368684A

公开(公告)日：1994-11-29

申请号：US993063

申请日：1992-12-18

申请人： Yoshio Ishikawa ,  Hiroshi Kojima ,  Masahito Hiratuka

发明人： Yoshio Ishikawa ,  Hiroshi Kojima ,  Masahito Hiratuka

IPC分类号： H01L21/302 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/306

CPC分类号： H01L21/32137

摘要： A magnetron discharge is generated by a high-frequency electric field and a magnetic field perpendicular to the electric field to generate a plasma of an etching gas, and an object to be processed having a silicon-containing layer represented by a polysilicon layer is exposed in the plasma to etch the silicon-containing layer. In this case, the etching gas mainly contains an HBr gas, a gas mixture of HBr and Cl.sub.2 gases, a gas mixture of HBr and HCl gases, or a gas obtained by adding an oxygen-containing gas such as an O.sub.2 gas to each of these gases.

摘要翻译： 通过高频电场和垂直于电场的磁场产生磁控管放电以产生蚀刻气体的等离子体，并且将具有由多晶硅层表示的含硅层的被处理物体暴露在 该等离子体蚀刻含硅层。 在这种情况下，蚀刻气体主要包含HBr气体，HBr和Cl2气体的气体混合物，HBr和HCl气体的气体混合物，或通过将诸如O 2气体的含氧气体加入到 这些气体。

公开(公告)号：US5164034A

公开(公告)日：1992-11-17

申请号：US762087

申请日：1991-09-19

申请人： Izumi Arai ,  Yoshifumi Tahara ,  Yoshio Ishikawa

发明人： Izumi Arai ,  Yoshifumi Tahara ,  Yoshio Ishikawa

IPC分类号： H01L21/00 ,  H01L21/308 ,  H01L21/311

CPC分类号： H01L21/67207 ,  H01L21/3081 ,  H01L21/31138 ,  H01L21/67069

摘要： A substrate processing apparatus comprising a housing section for housing substrates to be processed, a first chamber for performing anisotropic etching treatment, conveyor means for conveying the substrates from the housing section to the first chamber, and a second chamber for performing at least one of isotropic etching treatment and ashing treatment with respect to a substrate which has been subjected to the anisotropic etching treatment in the first chamber. And a method of processing substrates, comprising the steps of performing anisotropic etching treatment in a first chamber with respect to the substrates, and performing at least one of isotropic etching treatment and ashing treatment in a second chamber with respect to the substrates which have been subjected to the anisotropic etching treatment in the first chamber and have been kept unexposed to the atmosphere, the isotropic etching treatment and the ashing treatment being performed simultaneously or in succession.

公开(公告)号：US5772833A

公开(公告)日：1998-06-30

申请号：US341524

申请日：1994-11-17

申请人： Koichiro Inazawa ,  Yoshio Ishikawa ,  Takashi Asakawa ,  Masato Hiratsuka ,  Nobuyuki Okayama

发明人： Koichiro Inazawa ,  Yoshio Ishikawa ,  Takashi Asakawa ,  Masato Hiratsuka ,  Nobuyuki Okayama

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/3213 ,  H01L23/52 ,  H01L21/02

CPC分类号： H01J37/32082 ,  H01J37/32532 ,  H01J2237/3346

摘要： The present invention relates to a plasma etching method and a plasma etching apparatus, and more particularly to a plasma etching method and a plasma etching apparatus in which the selection ration is enhanced by improving trench side-wall protecting effect.

摘要翻译： 等离子体蚀刻方法和等离子体蚀刻装置技术领域本发明涉及一种等离子体蚀刻方法和等离子体蚀刻装置，更具体地涉及通过改善沟槽侧壁保护效果来提高选择比例的等离子体蚀刻方法和等离子体蚀刻装置。